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1. 发明授权

US08168531B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08168531B2
公开(公告)日：2012-05-01
申请号：US12434072
申请日：2009-05-01
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L21/4763
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译：一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露半导体层的一部分。接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。

2. 发明授权

US08749069B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08749069B2
公开(公告)日：2014-06-10
申请号：US13162836
申请日：2011-06-17
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L23/52
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译：一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露半导体层的一部分。接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。

3. 发明申请

US20090212295A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
公开(公告)号：US20090212295A1
公开(公告)日：2009-08-27
申请号：US12434048
申请日：2009-05-01
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L29/786 , H01L23/48 , H01L29/78
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.

4. 发明申请

US20050260804A1 Semiconductor device and method of fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050260804A1
公开(公告)日：2005-11-24
申请号：US11134417
申请日：2005-05-23
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L21/00 , H01L21/336 , H01L21/4763 , H01L21/768 , H01L21/77 , H01L21/84 , H01L29/417
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译：一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露半导体层的一部分。接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。

5. 发明授权

US07985992B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07985992B2
公开(公告)日：2011-07-26
申请号：US12434048
申请日：2009-05-01
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L29/76
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译：一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露半导体层的一部分。接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。

6. 发明申请

US20090275176A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090275176A1
公开(公告)日：2009-11-05
申请号：US12434072
申请日：2009-05-01
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L21/336 , H01L21/20 , H01L21/768
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译：一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔以及暴露半导体层的一部分。接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。

7. 发明授权

US08183063B2 Organic light emitting device and method of fabricating the same 有权
标题翻译：有机发光装置及其制造方法
公开(公告)号：US08183063B2
公开(公告)日：2012-05-22
申请号：US12506625
申请日：2009-07-21
申请人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-Sik Bae
发明人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-Sik Bae
IPC分类号： H01L21/00
CPC分类号： H01L27/3244 , H01L27/3246 , H01L51/5218 , H01L51/5271 , H01L2251/5315 , H01L2251/558
摘要： An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.
摘要翻译：提供了一种有机发光器件（OLED）及其制造方法，其中OLED包括具有栅电极的薄膜晶体管，以及衬底上的源电极和漏电极; 三层像素电极，其通过形成在所述基板上的绝缘层中的通孔接触孔连接到所述源极和漏极之一，并且具有下部像素电极，反射层图案和上部像素电极; 设置在所述上像素电极上并具有至少发射层的有机层; 以及设置在有机层上的相对电极。

8. 发明授权

US07579767B2 Organic light emitting device having triple layered pixel electrode 有权
标题翻译：具有三层像素电极的有机发光器件
公开(公告)号：US07579767B2
公开(公告)日：2009-08-25
申请号：US11138857
申请日：2005-05-27
申请人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-sik Bae
发明人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-sik Bae
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L27/3244 , H01L27/3246 , H01L51/5218 , H01L51/5271 , H01L2251/5315 , H01L2251/558
摘要： An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.
摘要翻译：提供了一种有机发光器件（OLED）及其制造方法，其中OLED包括具有栅电极的薄膜晶体管，以及衬底上的源电极和漏电极; 三层像素电极，其通过形成在所述基板上的绝缘层中的通孔接触孔连接到所述源极和漏极之一，并且具有下部像素电极，反射层图案和上部像素电极; 设置在所述上像素电极上并具有至少发射层的有机层; 以及设置在有机层上的相对电极。

9. 发明申请

US20050275339A1 Organic light emitting device and method of fabricating the same 有权
标题翻译：有机发光装置及其制造方法
公开(公告)号：US20050275339A1
公开(公告)日：2005-12-15
申请号：US11138857
申请日：2005-05-27
申请人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-sik Bae
发明人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-sik Bae
IPC分类号： H05B33/26 , G09F9/30 , H01L27/32 , H01L51/50 , H01L51/52 , H05B33/10 , H05B33/24
CPC分类号： H01L27/3244 , H01L27/3246 , H01L51/5218 , H01L51/5271 , H01L2251/5315 , H01L2251/558
摘要： An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the t substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.
摘要翻译：提供了一种有机发光器件（OLED）及其制造方法，其中OLED包括具有栅电极的薄膜晶体管，以及衬底上的源电极和漏电极; 三层像素电极，其通过形成在所述t基板上的绝缘层中的通孔接触孔连接到所述源极和漏极之一，并且具有下部像素电极，反射层图案和上部像素电极; 设置在所述上像素电极上并具有至少发射层的有机层; 以及设置在有机层上的相对电极。

10. 发明授权

US07335923B2 Electroluminescence display device 有权
标题翻译：电致发光显示装置
公开(公告)号：US07335923B2
公开(公告)日：2008-02-26
申请号：US11138322
申请日：2005-05-27
申请人： Tae-Wook Kang , Chang-Su Seo , Moon-Hee Park , Ho-Jin Kang
发明人： Tae-Wook Kang , Chang-Su Seo , Moon-Hee Park , Ho-Jin Kang
IPC分类号： H01L29/04
CPC分类号： H01L27/3248 , H01L51/5218 , H01L2251/5315
摘要： An electroluminescence display device that includes a thin film transistor layer formed on a substrate, at least one insulating layer formed on the thin film transistor layer, and a pixel layer, disposed on the insulating layer and including a first electrode layer, a second electrode layer, and an intermediate layer having at least an emitting layer interposed between the first electrode layer and the second electrode layer. The pixel layer includes a reflection layer that contacts either a source or drain electrode of the thin film transistor layer and is disposed below the first electrode layer, and the reflection layer includes a through hole through which the first electrode layer contacts either the source electrode or the drain electrode.
摘要翻译：一种电致发光显示装置，其包括形成在基板上的薄膜晶体管层，形成在所述薄膜晶体管层上的至少一个绝缘层和设置在所述绝缘层上的包括第一电极层的第二电极层以及中间层，其至少具有插入在第一电极层和第二电极层之间的发光层。像素层包括与薄膜晶体管层的源电极或漏电极接触并设置在第一电极层下方的反射层，反射层包括通孔，第一电极层通过该通孔与源电极或源电极接触，漏电极。

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