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1. 发明授权

US08624298B2 Display device including thin film transistor 有权
标题翻译：显示装置包括薄膜晶体管
公开(公告)号：US08624298B2
公开(公告)日：2014-01-07
申请号：US11760864
申请日：2007-06-11
申请人： Byoung-Deog Choi , Sung-Sik Bae , Won-Sik Kim
发明人： Byoung-Deog Choi , Sung-Sik Bae , Won-Sik Kim
IPC分类号： H01L23/52
CPC分类号： H01L27/12 , H01L29/78615 , H01L29/78639 , H01L29/78675
摘要： A flat panel display includes a gate line, a data line, and a power supply line and a plurality of pixels connected to the lines, wherein each of the pixels includes a first thin film transistor that includes an active layer having a channel region, a source region, and a drain region and a bias supply layer in contact with the channel region so as to apply a voltage to the channel region of the first thin film transistor, wherein the bias supply layer of the first thin film transistor is connected to the power supply line.
摘要翻译：平板显示器包括栅极线，数据线，以及连接到线路的电源线和多个像素，其中每个像素包括第一薄膜晶体管，其包括具有沟道区的有源层，源区域以及与沟道区域接触的漏极区域和偏压供给层，以向第一薄膜晶体管的沟道区域施加电压，其中第一薄膜晶体管的偏置供给层连接到电源线。

2. 发明授权

US08013337B2 Thin film transistor and display device using the same 有权
标题翻译：薄膜晶体管和使用其的显示装置
公开(公告)号：US08013337B2
公开(公告)日：2011-09-06
申请号：US11760876
申请日：2007-06-11
申请人： Byoung-Deog Choi , Sung-Sik Bae , Won-Sik Kim
发明人： Byoung-Deog Choi , Sung-Sik Bae , Won-Sik Kim
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , H01L29/78615 , H01L29/78639 , H01L29/78675
摘要： A thin film transistor including an active layer formed on an insulating substrate and having channel, source, and drain regions formed therein; a gate electrode formed over the channel region of the active layer; source and drain electrodes respectively formed over the source and drain regions of the active layer; and a body contact region formed in the active layer so that the body contact region is in contact with the channel region and separated from the source and drain regions, wherein a voltage is applied to the channel region through the body contact region, and the body contact region is connected to the source electrode or the drain electrode.
摘要翻译： 1.一种薄膜晶体管，包括形成在绝缘基板上的有源层，其中形成有沟道，源极和漏极区域; 形成在有源层的沟道区上的栅电极; 源极和漏极分别形成在有源层的源极和漏极区域上; 以及形成在所述有源层中的体接触区域，使得所述体接触区域与所述沟道区域接触并且与所述源极区域和漏极区域分离，其中通过所述身体接触区域向所述沟道区域施加电压，并且所述主体接触区域连接到源电极或漏电极。

3. 发明申请

US20070228398A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME 有权
标题翻译：薄膜晶体管和使用其的显示器件
公开(公告)号：US20070228398A1
公开(公告)日：2007-10-04
申请号：US11760876
申请日：2007-06-11
申请人： Byoung-Deog CHOI , Sung-Sik Bae , Won-Sik Kim
发明人： Byoung-Deog CHOI , Sung-Sik Bae , Won-Sik Kim
IPC分类号： H01L29/68 , H01L33/00
CPC分类号： H01L27/12 , H01L29/78615 , H01L29/78639 , H01L29/78675
摘要： A thin film transistor including an active layer formed on an insulating substrate and having channel, source, and drain regions formed therein; a gate electrode formed over the channel region of the active layer; source and drain electrodes respectively formed over the source and drain regions of the active layer; and a body contact region formed in the active layer so that the body contact region is in contact with the channel region and separated from the source and drain regions, wherein a voltage is applied to the channel region through the body contact region, and the body contact region is connected to the source electrode or the drain electrode.
摘要翻译： 1.一种薄膜晶体管，包括形成在绝缘基板上的有源层，其中形成有沟道，源极和漏极区域; 形成在有源层的沟道区上的栅电极; 源极和漏极分别形成在有源层的源极和漏极区域上; 以及形成在所述有源层中的体接触区域，使得所述体接触区域与所述沟道区域接触并且与所述源极区域和漏极区域分离，其中通过所述身体接触区域向所述沟道区域施加电压，并且所述主体接触区域连接到源电极或漏电极。

4. 发明授权

US06894737B2 Liquid crystal display device having improved seal pattern and method of fabricating the same 失效
标题翻译：具有改进的密封图案的液晶显示装置及其制造方法
公开(公告)号：US06894737B2
公开(公告)日：2005-05-17
申请号：US09859681
申请日：2001-09-24
申请人： Sung-Sik Bae
发明人： Sung-Sik Bae
IPC分类号： G02F1/1333 , G02F1/1339 , G02F1/1362 , G02F1/136
CPC分类号： G02F1/1339 , G02F1/136227 , G02F2001/133357
摘要： A liquid crystal display having a substrate includes a plurality of gate lines extended from each gate on the substrate, a gate insulating layer on the substrate including the gate lines, a plurality of data lines arranged to be perpendicular to the gate lines, a passivation layer over the data lines and the gate insulation layer, a plurality of etching holes in the passivation layer and the gate insulating layer, wherein the gate insulating layer within the etching holes has at least one concave and convex portions, and a plurality of seal pattern lines in the etching holes.
摘要翻译：具有衬底的液晶显示器包括从衬底上的每个栅极延伸的多条栅极线，在包括栅极线的衬底上的栅极绝缘层，与栅极线垂直的多条数据线，钝化层在数据线和栅极绝缘层上，在钝化层和栅极绝缘层中的多个蚀刻孔，其中蚀刻孔内的栅极绝缘层具有至少一个凹凸部分和多个密封图案线在蚀刻孔中。

5. 发明授权

US06458613B1 Method for manufacturing a liquid crystal display using a selective etching method 有权
标题翻译：使用选择性蚀刻方法制造液晶显示器的方法
公开(公告)号：US06458613B1
公开(公告)日：2002-10-01
申请号：US09184825
申请日：1998-11-02
申请人： Sung Sik Bae
发明人： Sung Sik Bae
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , G02F1/136227 , H01L29/4908
摘要： An etching method for manufacturing a liquid crystal display having TFTs, gate bus lines, data bus lines which include a refractory metal such as Mo, Ta, Ti, MoSi, TaSi or TiSi, and a passivation layer covering such layers, is such that refractory metal is not damaged by an etchant used for patterning the passivation layer. The method includes forming a passivation layer covering the switching element, the gate bus line and the data bus line on the substrate, forming a patterning layer on the passivation layer using a photo-resist wherein the patterning layer has open portions exposing some portions of the passivation layer on the switching element and a start portion of the gate and data bus lines, and removing the exposed portions of the passivation layer using an etching gas including CF4 and H2 gases. A mixing ratio of the H2 gas to the CF4 gas is varied and dependent on the area of the portion of the passivation layer to be removed and is preferably about 1% to about 20%.
摘要翻译：用于制造具有TFT，栅极总线，包括诸如Mo，Ta，Ti，MoSi，TaSi或TiSi的难熔金属的数据总线的液晶显示器的蚀刻方法以及覆盖这种层的钝化层是这样的：耐火材料用于图案化钝化层的蚀刻剂不会损坏金属。该方法包括在衬底上形成覆盖开关元件，栅极总线和数据总线的钝化层，使用光致抗蚀剂在钝化层上形成图案化层，其中图案化层具有暴露部分的开放部分开关元件上的钝化层和栅极和数据总线的起始部分，以及使用包括CF 4和H 2气体的蚀刻气体去除钝化层的暴露部分。 H2气体与CF4气体的混合比例变化并且取决于待除去的钝化层部分的面积，优选为约1％至约20％。

6. 发明授权

US08652885B2 Method of fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08652885B2
公开(公告)日：2014-02-18
申请号：US11760869
申请日：2007-06-11
申请人： Byoung-Deog Choi , Sung-Sik Bae , Won-Sik Kim
发明人： Byoung-Deog Choi , Sung-Sik Bae , Won-Sik Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/12 , H01L29/78615 , H01L29/78639 , H01L29/78675
摘要： A method of fabricating a thin film transistor includes forming an active layer on an insulating substrate; forming a gate insulation film on the insulating substrate; forming source, drain, and body contact regions which are separated by a channel region in the active layer; forming a gate on the gate insulation film; forming an interlayer insulation film on the insulating substrate; and forming source and drain electrodes electrically connected with the source and drain regions, respectively, wherein a voltage is applied to the channel region of the active layer through the body contact region, and the body contact region is connected to the source or drain electrode.
摘要翻译：制造薄膜晶体管的方法包括在绝缘基板上形成有源层; 在绝缘基板上形成栅极绝缘膜; 形成由有源层中的沟道区分隔的源极，漏极和体接触区域; 在栅极绝缘膜上形成栅极; 在绝缘基板上形成层间绝缘膜; 以及分别形成与源极和漏极区域电连接的源极和漏极，其中电压通过本体接触区域施加到有源层的沟道区域，并且主体接触区域连接到源极或漏极电极。

7. 发明申请

US20090280590A1 ORGANIC LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：有机发光装置及其制造方法
公开(公告)号：US20090280590A1
公开(公告)日：2009-11-12
申请号：US12506625
申请日：2009-07-21
申请人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-sik Bae
发明人： Chang-Su Seo , Moon-Hee Park , Tae-Wook Kang , Hyun-Eok Shin , Sung-sik Bae
IPC分类号： H01L21/00
CPC分类号： H01L27/3244 , H01L27/3246 , H01L51/5218 , H01L51/5271 , H01L2251/5315 , H01L2251/558
摘要： An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.
摘要翻译：提供了一种有机发光器件（OLED）及其制造方法，其中OLED包括具有栅电极的薄膜晶体管，以及衬底上的源电极和漏电极; 三层像素电极，其通过形成在所述基板上的绝缘层中的通孔接触孔连接到所述源极和漏极之一，并且具有下部像素电极，反射层图案和上部像素电极; 设置在所述上像素电极上并具有至少发射层的有机层; 以及设置在有机层上的相对电极。

8. 发明申请

US20070228441A1 DISPLAY DEVICE INCLUDING THIN FILM TRANSISTOR 有权
标题翻译：显示器件，包括薄膜晶体管
公开(公告)号：US20070228441A1
公开(公告)日：2007-10-04
申请号：US11760864
申请日：2007-06-11
申请人： Byoung-Deog CHOI , Sung-Sik BAE , Won-Sik KIM
发明人： Byoung-Deog CHOI , Sung-Sik BAE , Won-Sik KIM
IPC分类号： H01L27/105
CPC分类号： H01L27/12 , H01L29/78615 , H01L29/78639 , H01L29/78675
摘要： A flat panel display includes a gate line, a data line, and a power supply line and a plurality of pixels connected to the lines, wherein each of the pixels includes a first thin film transistor that includes an active layer having a channel region, a source region, and a drain region and a bias supply layer in contact with the channel region so as to apply a voltage to the channel region of the first thin film transistor, wherein the bias supply layer of the first thin film transistor is connected to the power supply line.
摘要翻译：平板显示器包括栅极线，数据线，以及连接到线路的电源线和多个像素，其中每个像素包括第一薄膜晶体管，其包括具有沟道区的有源层，源区域以及与沟道区域接触的漏极区域和偏压供给层，以向第一薄膜晶体管的沟道区域施加电压，其中第一薄膜晶体管的偏置供给层连接到电源线。

9. 发明授权

US06344884B1 Liquid crystal display device substrate and method for manufacturing thereof 有权
公开(公告)号：US06344884B1
公开(公告)日：2002-02-05
申请号：US09199650
申请日：1998-11-25
申请人： Woong-Kwon Kim , Jae-Beom Choi , Sung-Sik Bae , Kwang-Jo Hwang
发明人： Woong-Kwon Kim , Jae-Beom Choi , Sung-Sik Bae , Kwang-Jo Hwang
IPC分类号： G02F1136
CPC分类号： G02F1/136227
摘要： A liquid crystal display according to the present invention uses an organic layer treated with H2 plasma before fabricating an inorganic layer on the top of the organic layer. When forming thin film transistors (TFT) used in the LCD, an Indium Tin Oxide layer is fabricated above the TFTs and acts as a pixel electrode. When the organic layer, such as a passivation layer, is treated with the H2 plasma, an intermediate layer having an O—H bonding structure is formed to enhance bonding or attachment of an inorganic layer, such as an ITO layer, to the organic layer.

10. 发明授权

US5969702A Liquid crystal panel with a plurality of light shielding portions over a substrate including a pixel region and a driver circuit region 失效
标题翻译：在包括像素区域和驱动电路区域的基板上方具有多个遮光部分的液晶面板
公开(公告)号：US5969702A
公开(公告)日：1999-10-19
申请号：US833496
申请日：1997-04-07
申请人： Sung-Sik Bae
发明人： Sung-Sik Bae
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/00 , G09G3/36 , G02F1/1333
CPC分类号： G02F1/136209 , G02F1/13454 , G02F1/1368 , H01L27/1214 , H01L27/1288
摘要： A method of fabricating a liquid crystal panel comprises the steps of forming a black matrix on a substrate, forming a buffer layer on the substrate, forming semiconductors layer on the buffer layer, doping n.sup.+ impurities into a semiconductor layer on a pixel region on the substrate and in one semiconductor layer of the driver circuit region forming a gate insulating layer on the buffer layer and the semiconductor layer, forming a gate electrode on the gate electrode, introducing n.sup.- impurities into the semiconductor layer using the gate electrode as a mask after patterning of the gate insulating layer, doping p.sup.+ impurities into another semiconductor layer of the driver circuit unit, forming an insulating layer having a contact hole over the pixel region, forming a transparent electrode on the pixel region and into the contact hole.
摘要翻译：制造液晶面板的方法包括以下步骤：在衬底上形成黑矩阵，在衬底上形成缓冲层，在缓冲层上形成半导体层，将n +杂质掺杂到衬底上的像素区域上的半导体层中并且在驱动电路区域的一个半导体层中，在缓冲层和半导体层上形成栅极绝缘层，在栅电极上形成栅电极，在图案化之后，使用栅电极作为掩模，将n-杂质引入半导体层的栅极绝缘层，将p +杂质掺杂到驱动电路单元的另一个半导体层中，形成在像素区域上具有接触孔的绝缘层，在像素区域上形成透明电极并进入接触孔。

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