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    • 1. 发明申请
    • Semiconductor memory device
    • 半导体存储器件
    • US20080211551A1
    • 2008-09-04
    • US11819819
    • 2007-06-29
    • Tae-Sik YunKee-Teok Park
    • Tae-Sik YunKee-Teok Park
    • H03L7/00
    • G11C7/1078G11C7/109G11C7/20G11C29/1201G11C29/46
    • A semiconductor memory device performs a reset operation at a wafer state by using a signal input through an address pin in a test mode. The semiconductor memory device includes a buffer for transferring a reset command in response to a reset-active signal and a test reset signal, a test-reset entry signal generation unit for generating an internal test-reset entry signal in response to the test reset signal, and a rest signal driving unit for driving an active signal of an output signal of the buffer and the internal test-reset entry signal as an internal reset signal for a reset mode entry.
    • 半导体存储器件通过在测试模式下通过地址引脚输入的信号在晶片状态下执行复位操作。 半导体存储器件包括用于响应于复位有效信号和测试复位信号传送复位指令的缓冲器,用于响应于测试复位信号产生内部测试复位输入信号的测试复位输入信号产生单元 以及用于驱动缓冲器的输出信号的有效信号和内部测试复位输入信号的休息信号驱动单元作为复位模式输入的内部复位信号。
    • 5. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07835180B2
    • 2010-11-16
    • US12347520
    • 2008-12-31
    • Tae-Sik Yun
    • Tae-Sik Yun
    • G11C11/34
    • G11C8/12G11C8/04G11C11/4076G11C11/4087G11C11/4097
    • A semiconductor memory device includes a plurality of banks, each configured to receive a bank operation control signal and perform predetermined operations in response to the received bank operation control signal, a plurality of bank control blocks, each configured to receive a bank sequential signal and generate the plurality of bank operation control signals in response to enable periods of the received bank sequential signal, and a bank sequential signal generating block configured to generate the plurality of bank sequential signals each having a multiplicity of enable periods that are sequential in response to a command signal.
    • 半导体存储器件包括多个存储体,每个存储体被配置为接收存储体操作控制信号并且响应于所接收的存储体操作控制信号执行预定操作,多个存储体控制块,每个存储体控制块被配置为接收存储体顺序信号并产生 所述多个存储体操作控制信号响应于所接收的存储体顺序信号的使能周期,以及存储体顺序信号生成模块,其被配置为生成所述多个存储体顺序信号,每一组具有多个响应于命令的顺序的使能周期 信号。
    • 7. 发明授权
    • Semiconductor integrated circuit having stacked semiconductor chips and vias therebetween
    • 半导体集成电路具有堆叠的半导体芯片和它们之间的通孔
    • US08441831B2
    • 2013-05-14
    • US12878347
    • 2010-09-09
    • Young-Jun KuTae-Sik Yun
    • Young-Jun KuTae-Sik Yun
    • G11C5/06
    • H01L23/522G06F2213/0038H01L23/481H01L25/0657H01L2225/06513H01L2225/06544H01L2924/0002H04J3/047H04L25/028H04L25/0292H01L2924/00H01L2924/00012
    • A semiconductor integrated circuit includes a first semiconductor chip including a first output circuit which is enabled in a first operation mode and outputs a first output signal and a second output circuit which is enabled in a second operation mode and outputs a second output signal; a second semiconductor chip including a first input circuit which is enabled in the first operation mode and receives the first output signal and a second input circuit which is enabled in the second operation mode and receives the second output signal; and a common through chip via arranged to vertically penetrate through the semiconductor chip, be coupled with the first and second output circuits in one end and coupled with the first and second input circuits in the other end, and interface transfer of the first and second output signals which are enabled in different operation modes, including the first and second operation modes.
    • 一种半导体集成电路包括:第一半导体芯片,包括第一输出电路,其在第一操作模式下使能并输出第一输出信号;以及第二输出电路,其在第二操作模式下被使能并输出第二输出信号; 第二半导体芯片,包括在第一操作模式中被使能并接收第一输出信号的第一输入电路和在第二操作模式中被使能并接收第二输出信号的第二输入电路; 并且布置成垂直穿过半导体芯片的通用芯片通孔在一端与第一和第二输出电路耦合,并在另一端与第一和第二输入电路耦合,并且第一和第二输出 在不同的操作模式下启用的信号,包括第一和第二操作模式。