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1. 发明申请

US20080157101A1 TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：晶体管阵列基板及其制造方法
公开(公告)号：US20080157101A1
公开(公告)日：2008-07-03
申请号：US11955528
申请日：2007-12-13
申请人： Tae-Hyung HWANG , Seong-Sik SHIN , Nam-Seok ROH , Sang-Il KIM
发明人： Tae-Hyung HWANG , Seong-Sik SHIN , Nam-Seok ROH , Sang-Il KIM
IPC分类号： H01L33/00
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1288
摘要： A transistor array substrate includes a first substrate including a pixel region and a transistor region. The pixel region includes a pixel electrode, a portion of a disconnected gate line and a portion of a disconnected data line. The transistor region includes first and second gate connecting portions respectively connected to disconnected portions of the gate line, and first and second data connecting portions respectively connected to disconnected portions of the data line. The transistor array substrate also includes a second substrate including a gate line connecting portion connected to the first and second gate connecting portions, a data line connecting portion connecting the first and second data connecting portions, and a transistor connected to the gate line connecting portion, the data line connecting portion and the pixel electrode. The second substrate is attached to the transistor region of the first substrate.
摘要翻译：晶体管阵列基板包括包括像素区域和晶体管区域的第一基板。像素区域包括像素电极，断开的栅极线的一部分和断开的数据线的一部分。晶体管区域包括分别连接到栅极线的断开部分的第一和第二栅极连接部分，以及分别连接到数据线的断开部分的第一和第二数据连接部分。晶体管阵列基板还包括第二基板，包括连接到第一和第二栅极连接部分的栅极线连接部分，连接第一和第二数据连接部分的数据线连接部分和连接到栅极线连接部分的晶体管，数据线连接部分和像素电极。第二衬底附接到第一衬底的晶体管区域。

2. 发明申请

US20120329185A1 DISPLAY APPARATUS AND METHOD OF FABRICATING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20120329185A1
公开(公告)日：2012-12-27
申请号：US13570591
申请日：2012-08-09
申请人： Tae-Hyung HWANG , Sang-Il KIM
发明人： Tae-Hyung HWANG , Sang-Il KIM
IPC分类号： B05D5/06 , H01L33/50
CPC分类号： G02F1/133305 , G02F1/133514 , G02F2001/133567
摘要： A display apparatus that includes a first substrate, a second substrate, and a thin film transistor. The first substrate includes a fiber reinforced plastic substrate and a color filter layer formed on the fiber reinforced plastic substrate. The second substrate faces the first substrate. The thin film transistor is formed on the first substrate.
摘要翻译：一种显示装置，包括第一基板，第二基板和薄膜晶体管。第一基板包括纤维增强塑料基板和形成在纤维增强塑料基板上的滤色器层。第二基板面向第一基板。薄膜晶体管形成在第一基板上。

3. 发明申请

US20100066969A1 DISPLAY APPARATUS AND METHOD OF FABRICATING THE SAME 失效
标题翻译：显示装置及其制造方法
公开(公告)号：US20100066969A1
公开(公告)日：2010-03-18
申请号：US12405994
申请日：2009-03-17
申请人： Tae-Hyung HWANG , Sang-Il Kim
发明人： Tae-Hyung HWANG , Sang-Il Kim
IPC分类号： G02F1/1333 , H01L29/04 , G02F1/13
CPC分类号： G02F1/133305 , G02F1/133514 , G02F2001/133567
摘要： A display apparatus that includes a first substrate, a second substrate, and a thin film transistor. The first substrate includes a fiber reinforced plastic substrate and a color filter layer formed on the fiber reinforced plastic substrate. The second substrate faces the first substrate. The thin film transistor is formed on the first substrate.
摘要翻译：一种显示装置，包括第一基板，第二基板和薄膜晶体管。第一基板包括纤维增强塑料基板和形成在纤维增强塑料基板上的滤色器层。第二基板面向第一基板。薄膜晶体管形成在第一基板上。

4. 发明申请

US20080302482A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20080302482A1
公开(公告)日：2008-12-11
申请号：US11969576
申请日：2008-01-04
申请人： Tae-Hyung HWANG , Hyung-Il JEON , Nam-Seok ROH , Sang-Il KIM
发明人： Tae-Hyung HWANG , Hyung-Il JEON , Nam-Seok ROH , Sang-Il KIM
IPC分类号： C23F1/08 , C23C14/34 , C23C16/00
CPC分类号： C23C16/4401 , C23C14/564 , H01J37/32431 , H01J2237/022 , H01L21/67069
摘要： A substrate processing apparatus includes a substrate processing part which processes a substrate and a particle remover which generates an electric field. The particle remover generates the electric field adjacent to a sidewall of a chamber of the substrate processing apparatus, and the electric field guides particles formed during which the substrate is processed, to prevent the particles from being attached onto the sidewall of the chamber. Thus, the substrate processing apparatus prevents defects of the substrate due to the particles, thereby improving product yield and productivity and reducing a manufacturing cost thereof.
摘要翻译：基板处理装置包括处理基板的基板处理部和产生电场的粒子去除器。颗粒去除器产生与基板处理装置的室的侧壁相邻的电场，并且电场引导在其中处理基板期间形成的颗粒，以防止颗粒附着到室的侧壁上。因此，基板处理装置防止由于颗粒而导致的基板的缺陷，从而提高产品的成品率和生产率并降低其制造成本。

5. 发明申请

US20080003728A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20080003728A1
公开(公告)日：2008-01-03
申请号：US11619407
申请日：2007-01-03
申请人： Tae-Hyung HWANG , Hyung-Il JEON , Nam-Seok ROH , Sang-Il KIM
发明人： Tae-Hyung HWANG , Hyung-Il JEON , Nam-Seok ROH , Sang-Il KIM
IPC分类号： H01L21/84
CPC分类号： H01L27/124 , H01L27/12 , H01L27/1214 , H01L27/1218 , H01L27/1288 , H01L29/78603
摘要： A thin film transistor array panel and a method of manufacturing the same include: forming a gate electrode on an insulating substrate; sequentially forming a gate insulating layer; a semiconductor material layer and an ohmic contact material layer on the gate electrode; forming a first semiconductor layer pattern and a first ohmic contact pattern for covering the gate electrode and a surrounding area of the gate electrode by patterning the semiconductor material layer and the ohmic contact material layer; forming a conductive film on the gate insulating layer and the first ohmic contact pattern; forming a conductive film pattern on a partial area of the first ohmic contact pattern and a data line on the gate insulating layer by patterning the conductive film; forming a second ohmic contact pattern and a second semiconductor layer pattern by sequentially etching the first ohmic contact pattern and the first semiconductor layer pattern exposed by deviating from the conductive film pattern; forming a source electrode and a drain electrode separated from each other by patterning the conductive film pattern; forming an ohmic contact by etching the second ohmic contact pattern exposed between the separated source electrode and drain electrode; and forming a pixel electrode connected to the drain electrode. Therefore, even if an insulating substrate expands due to heat, erroneous alignment is not generated between a projection of the semiconductor layer and the source electrode and the drain electrode, thereby improving manufacturing efficiency and performance of a thin film transistor array panel.
摘要翻译：薄膜晶体管阵列面板及其制造方法包括：在绝缘基板上形成栅电极; 依次形成栅极绝缘层; 栅电极上的半导体材料层和欧姆接触材料层; 通过图案化所述半导体材料层和所述欧姆接触材料层，形成第一半导体层图案和第一欧姆接触图案，以覆盖所述栅电极和所述栅电极的周围区域; 在所述栅极绝缘层和所述第一欧姆接触图案上形成导电膜; 通过图案化导电膜，在第一欧姆接触图案的部分区域和栅极绝缘层上的数据线上形成导电膜图案; 通过依次蚀刻通过偏离导电膜图案而暴露的第一欧姆接触图案和第一半导体层图案，形成第二欧姆接触图案和第二半导体层图案; 通过图案化所述导电膜图案来形成彼此分离的源电极和漏电极; 通过蚀刻暴露在分离的源电极和漏极之间的第二欧姆接触图形来形成欧姆接触; 以及形成连接到所述漏电极的像素电极。因此，即使绝缘基板由于热而膨胀，也不会在半导体层的突起与源电极和漏电极之间产生错误对准，从而提高薄膜晶体管阵列面板的制造效率和性能。

6. 发明申请

US20100084661A1 DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME 审中-公开
标题翻译：显示基板，其制造方法和具有该显示基板的显示装置
公开(公告)号：US20100084661A1
公开(公告)日：2010-04-08
申请号：US12405564
申请日：2009-03-17
申请人： Tae-Hyung HWANG
发明人： Tae-Hyung HWANG
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L27/1288 , H01L27/12 , H01L27/1214 , H04R19/005 , H04R19/02 , H04R2499/15
摘要： The present invention relates to a display substrate in which sound devices serving as speakers or a microphones are built, and the display substrate includes a substrate including a sound processing area and a display area, a plurality of sound devices arranged in the sound processing area, and a plurality of pixels arranged in the display area. The sound devices may be formed on the substrate together with the pixels using a same manufacturing process as that used to form the pixels.
摘要翻译：本发明涉及一种显示基板，其中构成用作扬声器或麦克风的声音装置，并且显示基板包括具有声音处理区域和显示区域的基板，布置在声音处理区域中的多个声音装置，以及布置在显示区域中的多个像素。可以使用与用于形成像素的制造过程相同的制造工艺，在像素上与基板一起形成声音装置。

7. 发明申请

US20090078972A1 SENSOR THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：传感器薄膜晶体管，具有该薄膜晶体管的薄膜晶体管基板及其制造方法
公开(公告)号：US20090078972A1
公开(公告)日：2009-03-26
申请号：US12202090
申请日：2008-08-29
申请人： Tae-Hyung HWANG , Hyung-Il JEON , Nikulin IVAN
发明人： Tae-Hyung HWANG , Hyung-Il JEON , Nikulin IVAN
IPC分类号： H01L31/112 , H01L21/336
CPC分类号： H01L27/14601 , H01L27/1214
摘要： A sensor thin film transistor includes a gate electrode, a gate insulation layer formed on the gate electrode, a semiconductor layer having a portion positioned above the gate electrode and on a side of the gate insulation layer opposite the gate electrode, and a source electrode and drain electrode having spaced apart ends positioned on the semiconductor layer, wherein the sensor thin film transistor is operative such that a signal-to-noise ratio is equal to or greater than about 200 when the gate-off voltage applied to the gate electrode is equal to or less than about 0V.
摘要翻译：传感器薄膜晶体管包括栅电极，形成在栅电极上的栅绝缘层，具有位于栅电极上方的部分和栅极绝缘层与栅电极相对的一侧的半导体层，以及源极和漏电极具有位于半导体层上的间隔开的端部，其中传感器薄膜晶体管的操作使得当施加到栅电极的栅极截止电压相等时，信噪比等于或大于约200 至或小于约0V。

8. 发明申请

US20120298182A1 FLEXIBLE SOLAR CELL 审中-公开
标题翻译：柔性太阳能电池
公开(公告)号：US20120298182A1
公开(公告)日：2012-11-29
申请号：US13567314
申请日：2012-08-06
申请人： Tae-Hyung HWANG
发明人： Tae-Hyung HWANG
IPC分类号： H01L31/052 , H01L31/0376 , H01L31/0232
CPC分类号： H01M14/005 , H01G9/209 , H01G9/2095 , H01L27/301 , H01L31/0392 , H01L31/03926 , H01L31/0504 , H01L31/0543 , H01L31/0547 , H01L31/056 , H01L31/075 , H01L51/447 , Y02E10/52 , Y02E10/542 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： A flexible solar cell including a flexible substrate; a first electrode on the flexible substrate; a second electrode on the flexible substrate, the second electrode being spaced apart from the first electrode; a photoelectric conversion element, one side of the photoelectric conversion element being connected to the first electrode and another side of the photoelectric conversion element being connected to the second electrode; and a reflective layer between the flexible substrate and the photoelectric conversion element, the reflective layer including at least one recessed portion, and being configured to reflect incident light toward the photoelectric conversion element.
摘要翻译：一种柔性太阳能电池，包括柔性基板; 柔性基板上的第一电极; 柔性基板上的第二电极，第二电极与第一电极间隔开; 光电转换元件，所述光电转换元件的一侧与所述第一电极连接，所述光电转换元件的另一侧与所述第二电极连接; 以及在所述柔性基板和所述光电转换元件之间的反射层，所述反射层包括至少一个凹部，并且被配置为将入射光反射到所述光电转换元件。

9. 发明申请

US20110227080A1 FLAT PANEL DISPLAY 有权
标题翻译：平板显示
公开(公告)号：US20110227080A1
公开(公告)日：2011-09-22
申请号：US13038545
申请日：2011-03-02
申请人： Nam-Seok ROH , Jung-Woo PARK , Dae-Jin PARK , Yu-Jin KIM , Joo-Han BAE , Tae-Hyung HWANG , Seok-Joon HONG
发明人： Nam-Seok ROH , Jung-Woo PARK , Dae-Jin PARK , Yu-Jin KIM , Joo-Han BAE , Tae-Hyung HWANG , Seok-Joon HONG
IPC分类号： H01L33/60
CPC分类号： G02F1/167 , G02B26/005
摘要： A flat panel display includes; a first substrate, a white reflective layer disposed on the first substrate, a pixel electrode disposed on the white reflective, a second substrate disposed facing the first substrate, a common electrode disposed on the second substrate, and an electrooptic layer disposed between the pixel electrode and the common electrode, wherein the white reflective layer includes at least one of TiO2 and BaSO4.
摘要翻译：平板显示器包括：第一基板，布置在第一基板上的白色反射层，设置在白色反射板上的像素电极，与第一基板相对配置的第二基板，设置在第二基板上的公共电极，以及设置在像素电极之间的电光层和所述公共电极，其中所述白色反射层包括TiO 2和BaSO 4中的至少一种。

10. 发明申请

US20100062555A1 METHOD OF FORMING CRYSTALLIZED SILICON AND METHOD OF FABRICATING THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY USING THE SAME 有权
标题翻译：形成结晶硅的方法以及制造薄膜晶体管的方法和使用其的液晶显示器
公开(公告)号：US20100062555A1
公开(公告)日：2010-03-11
申请号：US12412682
申请日：2009-03-27
申请人： Tae-Hyung HWANG , Hyun-Jae KIM , Do-Kyung KIM , Woong-Hee JEONG , Choong-Hee LEE , Tae-Hun JUNG
发明人： Tae-Hyung HWANG , Hyun-Jae KIM , Do-Kyung KIM , Woong-Hee JEONG , Choong-Hee LEE , Tae-Hun JUNG
IPC分类号： H01L21/70 , H01L21/336 , H01L21/3205
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/02667 , H01L27/1281 , H01L27/1285
摘要： A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.
摘要翻译：一种使非晶硅结晶的方法包括在衬底上形成非晶硅层; 在所述非晶硅层上形成绝缘层; 在绝缘层上形成热分布金属层; 以及在所述散热金属层上形成一个硅酸盐层。然后施加点火热以点燃铝酸盐层，并从点燃的铝酸盐层产生足够的局部放热，以使非晶硅层结晶。非晶硅层下面的衬底可以是通过通过散热金属层和绝缘层施加到非晶硅层的顶部的局部结晶热而基本上不变形的热敏衬底。

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