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1. 发明申请

US20060117660A1 Small cylindrical reformer 有权
公开(公告)号：US20060117660A1
公开(公告)日：2006-06-08
申请号：US11296061
申请日：2005-12-06
申请人： Tae Woo , Young Yoon , Seong Lee , Il Kim , Keun Choi
发明人： Tae Woo , Young Yoon , Seong Lee , Il Kim , Keun Choi
IPC分类号： B01J7/00
CPC分类号： B01J8/0465 , B01J8/0496 , B01J19/249 , B01J2208/00309 , B01J2208/00495 , B01J2208/00504 , B01J2208/00513 , B01J2208/0053 , B01J2219/00155 , B01J2219/2454 , B01J2219/2465 , B01J2219/2466 , B01J2219/2481 , B01J2219/2485 , C01B3/384 , C01B3/48 , C01B3/583 , C01B2203/0233 , C01B2203/0283 , C01B2203/044 , C01B2203/047 , C01B2203/0816 , C01B2203/1064 , C01B2203/107 , C01B2203/1076 , C01B2203/1288 , C01B2203/142 , C01B2203/82 , Y02P20/124 , Y02P20/129
摘要： A small cylindrical reformer according to the embodiments of the present invention are suitable for use in the production of hydrogen from fossil fuels for a small fuel cell power plant. In the small cylindrical reformer, a reforming reactor, a water gas shift reactor (high temperature or low temperature), a combustor, a heat exchanger, a steam generator, etc., may be integrated in a single container to form an optimal heat exchanging network, minimize heat loss and optimize heat exchange efficiency. Thereby, the reformer is designed to be easily processed and manufactured and to have a compact size, thus realizing high efficiency, light weight and ease of mass production.

2. 发明申请

US20070256459A1 Door for Drum Type Washing Machines 审中-公开
标题翻译：鼓式洗衣机门
公开(公告)号：US20070256459A1
公开(公告)日：2007-11-08
申请号：US10556344
申请日：2005-07-08
申请人： Seong No Yoon , Bong Sang Lee , Sung Rak Gong , Bo Yeon Kim , Seong Lee , Dae Hee Kwon
发明人： Seong No Yoon , Bong Sang Lee , Sung Rak Gong , Bo Yeon Kim , Seong Lee , Dae Hee Kwon
IPC分类号： A47H33/00
CPC分类号： D06F37/28
摘要： Disclosed herein is a door for drum type washing machines wherein a decorative band is permanently attached to a door frame by means of improved engagement between the decorative band and the door frame. The door comprises a door frame formed by injection molding, and a decorative band inserted in a mold by an insert injection method when the door frame is formed by injection molding such that the decorative band is attached to the front surface of the door frame.
摘要翻译：本文公开了一种用于滚筒式洗衣机的门，其中装饰带通过改进的装饰带和门框架之间的接合永久地附接到门框。该门包括通过注射成型形成的门框，以及当通过注射模制形成门框时，通过插入注射法插入模具中的装饰带，使得装饰带附接到门框的前表面。

3. 发明申请

US20070046762A1 Film donor device for laser induced thermal imaging 失效
标题翻译：用于激光诱导热成像的薄膜供体装置
公开(公告)号：US20070046762A1
公开(公告)日：2007-03-01
申请号：US11511153
申请日：2006-08-28
申请人： Tae Min Kang , Jin Kim , Mu Kim , Sun Kim , Noh Kwak , Sang Lee , Seong Lee , Seung Lee , Sok Noh , Jin Seong , Myung Song , Yeun Sung , Byeong Yoo
发明人： Tae Min Kang , Jin Kim , Mu Kim , Sun Kim , Noh Kwak , Sang Lee , Seong Lee , Seung Lee , Sok Noh , Jin Seong , Myung Song , Yeun Sung , Byeong Yoo
IPC分类号： B41J2/38
CPC分类号： B41M5/265 , B41M5/38221 , H01L51/0013
摘要： A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.
摘要翻译：公开了一种激光诱导热成像（LITI）装置和使用其的电子装置的制造方法。 LITI装置包括腔室，衬底支撑件，接触框架和激光源或振荡器。 LITI装置将可转移层从成膜剂装置转移到中间电子装置的表面上。 LITI装置使用磁力来提供可转移层与中间装置的表面之间的紧密接触。磁力由形成在LITI装置的两个部件中的磁性材料产生，该两个部件是间隔开的中间转印层和中间装置的表面。在LITI装置的以下两个部件中形成磁体或磁性材料：1）中间装置和薄膜供体装置; 2）中间装置和接触框架; 3）基底支撑体和薄膜供体装置; 或4）衬底支撑件和接触框架。

4. 发明申请

US20060229461A1 Method for preparing unsaturated fatty acids 审中-公开
标题翻译：不饱和脂肪酸的制备方法
公开(公告)号：US20060229461A1
公开(公告)日：2006-10-12
申请号：US11388416
申请日：2006-03-24
申请人： Soon-Kee Sung , Jung Yi , Seong Lee
发明人： Soon-Kee Sung , Jung Yi , Seong Lee
IPC分类号： C07C51/43
CPC分类号： C07C51/487 , C07C51/43 , C11C1/007 , C11C3/14 , C07C57/03 , C07C57/12
摘要： Disclosed relates to a method for preparing unsaturated fatty acids and, more particularly, to a method for preparing unsaturated fatty acids in a high purity of at least 99% by isolating and purifying unsaturated fatty acids via a secondary nucleation mechanism using fatty acid-urea inclusion compounds.
摘要翻译：本发明涉及一种制备不饱和脂肪酸的方法，更具体地说，涉及通过使用脂肪酸 - 脲包合物通过二次成核机理分离和纯化不饱和脂肪酸，制备高纯度至少99％的不饱和脂肪酸的方法化合物。

5. 发明申请

US20060013183A1 Multi-path interference removing for wireless relay system apparatus and method using by same channel frequency 有权
公开(公告)号：US20060013183A1
公开(公告)日：2006-01-19
申请号：US11124295
申请日：2005-05-09
申请人： Seong Lee , Ju Song , Hyun Kang
发明人： Seong Lee , Ju Song , Hyun Kang
IPC分类号： H04J1/00
CPC分类号： H04B7/15564
摘要： Embodies of peripheral a wireless relay system apparatus and method for a multi-path interference removing using by same channel frequency is shown and described, which purpose of the present invention is to overcome extension of service coverage and a dead spot with amplifying same channel frequency, a problem in doing the relay, system wireless relay system was a same frequency interference of RF (Radio Frequency) output is become feedback radiating from tx antenna to rx antenna of the relay system, the wireless relay system apparatus and method effectively eliminates the same frequency interference so that it can ensure an additional system gain and easy to set up relatively to general same frequency relay system.

6. 发明申请

US20050268667A1 Drum washing machine 审中-公开
标题翻译：滚筒洗衣机
公开(公告)号：US20050268667A1
公开(公告)日：2005-12-08
申请号：US11034983
申请日：2005-01-14
申请人： Seong Yoon , Bong Lee , Sung Gong , Bo Kim , Seong Lee , Dae Kwon
发明人： Seong Yoon , Bong Lee , Sung Gong , Bo Kim , Seong Lee , Dae Kwon
IPC分类号： B08B3/12 , D06F37/26 , D06F39/12
CPC分类号： D06F39/12
摘要： Disclosed is a drum washing machine comprising a top cover covering an upper surface of the washing machine, a panel frame provided on an upper front portion of the top cover, and at least one projecting member protruded rearward from the panel frame so as to support a front portion of the top cover.
摘要翻译：公开了一种滚筒洗衣机，其包括覆盖洗衣机的上表面的顶盖，设置在顶盖的上前部的面板框架和从面板框架向后突出的至少一个突出构件，以支撑顶盖的前部。

7. 发明申请

US20050106813A1 Method of manufacturing flash memory device 审中-公开
标题翻译：制造闪存设备的方法
公开(公告)号：US20050106813A1
公开(公告)日：2005-05-19
申请号：US10745165
申请日：2003-12-23
申请人： Seong Lee , Sang Kwak , Sang Park
发明人： Seong Lee , Sang Kwak , Sang Park
IPC分类号： H01L21/76 , H01L21/336 , H01L21/461 , H01L21/8234 , H01L21/8247 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/115 , H01L27/105 , H01L27/11526 , H01L27/11546
摘要： Provided is a method of manufacturing a flash memory device. In a flash memory device using a self-aligned shallow trench isolation scheme, a buffer oxide layer is formed between a first polysilicon layer and a nitride layer. After a polishing process for forming a field oxide film is performed, a buffer oxide layer is used as an etch-prevention layer in the process of stripping the nitride layer and the buffer oxide layer is stripped in a cleaning process before a second polysilicon layer is deposited. It is thus possible not only to prevent phosphorous ions contained in an H3PO4 solution used in the process of stripping the nitride layer from diffusing into the grain boundary of the first polysilicon layer, but also to reduce the time when the first polysilicon layer is exposed to a HF cleaner used in the cleaning process before the second polysilicon layer is deposited. Therefore, the present invention has effects that it can enhance the properties of a gate oxide layer and a gate electrode by minimizing an attack of a fluorine radical contained in the HF cleaner against the first polysilicon layer.
摘要翻译：提供一种制造闪速存储器件的方法。在使用自对准浅沟槽隔离方案的闪存器件中，在第一多晶硅层和氮化物层之间形成缓冲氧化物层。在进行用于形成场氧化膜的抛光工艺之后，在剥离氮化物层的过程中使用缓冲氧化物层作为防蚀层，并且在第二多晶硅层为第二多晶硅层之前在清洁过程中剥离缓冲氧化物层存放因此，不仅可以防止在剥离氮化物层的过程中使用的H 3 PO 4·4溶液中所含的磷离子扩散到第一而且在第二多晶硅层沉积之前也减少了第一多晶硅层暴露于清洁工艺中使用的HF清洁剂的时间。因此，本发明具有通过使包含在HF清洁器中的氟自由基相对于第一多晶硅层的侵蚀最小化来提高栅极氧化物层和栅电极的性质的效果。

8. 发明申请

US20050095459A1 Organic electroluminescent device using a mixture of high and low molecular light-emitting substances as a light-emitting substance 审中-公开
标题翻译：使用高分子发光物质和低分子量发光物质的混合物作为发光物质的有机电致发光器件
公开(公告)号：US20050095459A1
公开(公告)日：2005-05-05
申请号：US11011583
申请日：2004-12-15
申请人： Byung Chin , Min Suh , Mu Kim , Seong Lee , Jang Kwon
发明人： Byung Chin , Min Suh , Mu Kim , Seong Lee , Jang Kwon
IPC分类号： H01L51/50 , C09K11/06 , H01L51/00 , H01L51/30 , H01L51/40 , H05B33/14 , B32B9/00 , B32B27/00 , H05B33/10
CPC分类号： C09K11/06 , C09K2211/10 , C09K2211/1003 , C09K2211/1018 , C09K2211/14 , C09K2211/1408 , C09K2211/1441 , H01L51/0013 , H01L51/0037 , H01L51/0059 , H01L51/0062 , H01L51/5012 , H05B33/14 , Y10S428/917
摘要： An organic EL device in which light-emitting efficiency, color purity and laser induced thermal imaging characteristics are improved by providing with an organic EL device comprising a first electrode, a hole transport layer, a light-emitting layer, and a second electrode, wherein the light-emitting layer uses a mixture of an optically active low molecular electric charge transport material and a high molecular light-emitting substance.
摘要翻译：通过提供包括第一电极，空穴传输层，发光层和第二电极的有机EL器件，改善了发光效率，色纯度和激光诱导热成像特性的有机EL器件，其中发光层使用光学活性低分子电荷输送材料和高分子发光物质的混合物。

9. 发明授权

US06821557B2 Tungsten film coating method using tungsten oxide powders 有权
标题翻译：使用氧化钨粉末的钨膜涂覆方法
公开(公告)号：US06821557B2
公开(公告)日：2004-11-23
申请号：US10340505
申请日：2003-01-10
申请人： Seong Lee , Moon-Hee Hong , Joon-Woong Noh , Eun-Pyo Kim , Yoon-Sik Park
发明人： Seong Lee , Moon-Hee Hong , Joon-Woong Noh , Eun-Pyo Kim , Yoon-Sik Park
IPC分类号： B05D112
CPC分类号： C23C26/00
摘要： Disclosed is a tungsten film coating method using tungsten oxide powders including the steps of contacting the tungsten oxide powders with a metal substrate and carrying out thermal reduction treatment thereon at a temperature of at least 650° C. under a hydrogen atmosphere just to coat the tungsten film on the metal substrate. Accordingly, the present invention enables to provide a simple method of coating a tungsten thin film on a metal substrate using the phenomenon of tungsten migration through vapor phase when thermal reduction treatment is carried out on tungsten oxide powders without using previous chemical or physical vapor depositions requiring expensive precision equipments or causing environmental pollution.
摘要翻译：公开了一种使用氧化钨粉末的钨膜涂覆方法，其包括以下步骤：使钨氧化物粉末与金属基底接触，并在氢气氛下在至少650℃的温度下对其进行热还原处理，以涂覆钨薄膜在金属基板上。因此，本发明能够提供一种在金属基板上涂覆钨薄膜的简单方法，该方法使用钨氧化物粉末进行热还原处理时，通过气相的钨迁移现象，而不需要先前的化学或物理气相沉积昂贵的精密设备或造成环境污染。

10. 发明授权

US5294269A Repeated sintering of tungsten based heavy alloys for improved impact toughness 失效
标题翻译：重复烧结钨基重合金，提高冲击韧性
公开(公告)号：US5294269A
公开(公告)日：1994-03-15
申请号：US051425
申请日：1993-04-23
申请人： Young M. Lee , Kyung J. Park , Kil S. Churn , Woon H. Baek , Heung S. Song , Joon W. Noh , Moon L. Hong , Seong Lee , Eun P. Kim
发明人： Young M. Lee , Kyung J. Park , Kil S. Churn , Woon H. Baek , Heung S. Song , Joon W. Noh , Moon L. Hong , Seong Lee , Eun P. Kim
IPC分类号： B22F3/24 , B22F5/00 , C22C1/04 , C22C27/04 , C22F1/00 , C22F1/18 , C22C27/00
CPC分类号： C22C1/045 , B22F3/24 , C22C27/04 , C22F1/18
摘要： A method for heat-treatment of tungsten based alloys, capable of improving impact toughness while keeping tensile strength and elongation. The method comprises maintaining a sintered tungsten based alloy consisting of 86 to 99 weight % tungsten and the balance at least one selected from a group consisting of nickel, iron, copper, cobalt and molybdenum, at a temperature ranged from 950.degree. to 1,350.degree. C. for a maintenance time of one minute to 24 hours, quenching the sintered alloy in water or in oil, and repeating the maintaining and quenching steps.
摘要翻译：一种能够在保持拉伸强度和伸长率的同时提高冲击韧性的钨基合金的热处理方法。该方法包括在950至1350℃的温度范围内保持由86至99重量％的钨组成的余量的钨基合金，余量为选自镍，铁，铜，钴和钼的至少一种。维持时间为1分钟至24小时，将烧结合金淬火在水中或油中，重复维持和淬火步骤。

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