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    • 3. 发明申请
    • Film donor device for laser induced thermal imaging
    • 用于激光诱导热成像的薄膜供体装置
    • US20070046762A1
    • 2007-03-01
    • US11511153
    • 2006-08-28
    • Tae Min KangJin KimMu KimSun KimNoh KwakSang LeeSeong LeeSeung LeeSok NohJin SeongMyung SongYeun SungByeong Yoo
    • Tae Min KangJin KimMu KimSun KimNoh KwakSang LeeSeong LeeSeung LeeSok NohJin SeongMyung SongYeun SungByeong Yoo
    • B41J2/38
    • B41M5/265B41M5/38221H01L51/0013
    • A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.
    • 公开了一种激光诱导热成像(LITI)装置和使用其的电子装置的制造方法。 LITI装置包括腔室,衬底支撑件,接触框架和激光源或振荡器。 LITI装置将可转移层从成膜剂装置转移到中间电子装置的表面上。 LITI装置使用磁力来提供可转移层与中间装置的表面之间的紧密接触。 磁力由形成在LITI装置的两个部件中的磁性材料产生,该两个部件是间隔开的中间转印层和中间装置的表面。 在LITI装置的以下两个部件中形成磁体或磁性材料:1)中间装置和薄膜供体装置; 2)中间装置和接触框架; 3)基底支撑体和薄膜供体装置; 或4)衬底支撑件和接触框架。
    • 7. 发明申请
    • Method of manufacturing flash memory device
    • 制造闪存设备的方法
    • US20050106813A1
    • 2005-05-19
    • US10745165
    • 2003-12-23
    • Seong LeeSang KwakSang Park
    • Seong LeeSang KwakSang Park
    • H01L21/76H01L21/336H01L21/461H01L21/8234H01L21/8247H01L27/08H01L27/088H01L27/10H01L27/105H01L27/115H01L29/788H01L29/792
    • H01L27/115H01L27/105H01L27/11526H01L27/11546
    • Provided is a method of manufacturing a flash memory device. In a flash memory device using a self-aligned shallow trench isolation scheme, a buffer oxide layer is formed between a first polysilicon layer and a nitride layer. After a polishing process for forming a field oxide film is performed, a buffer oxide layer is used as an etch-prevention layer in the process of stripping the nitride layer and the buffer oxide layer is stripped in a cleaning process before a second polysilicon layer is deposited. It is thus possible not only to prevent phosphorous ions contained in an H3PO4 solution used in the process of stripping the nitride layer from diffusing into the grain boundary of the first polysilicon layer, but also to reduce the time when the first polysilicon layer is exposed to a HF cleaner used in the cleaning process before the second polysilicon layer is deposited. Therefore, the present invention has effects that it can enhance the properties of a gate oxide layer and a gate electrode by minimizing an attack of a fluorine radical contained in the HF cleaner against the first polysilicon layer.
    • 提供一种制造闪速存储器件的方法。 在使用自对准浅沟槽隔离方案的闪存器件中,在第一多晶硅层和氮化物层之间形成缓冲氧化物层。 在进行用于形成场氧化膜的抛光工艺之后,在剥离氮化物层的过程中使用缓冲氧化物层作为防蚀层,并且在第二多晶硅层为第二多晶硅层之前在清洁过程中剥离缓冲氧化物层 存放 因此,不仅可以防止在剥离氮化物层的过程中使用的H 3 PO 4·4溶液中所含的磷离子扩散到第一 而且在第二多晶硅层沉积之前也减少了第一多晶硅层暴露于清洁工艺中使用的HF清洁剂的时间。 因此,本发明具有通过使包含在HF清洁器中的氟自由基相对于第一多晶硅层的侵蚀最小化来提高栅极氧化物层和栅电极的性质的效果。