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1. 发明授权

US06355108B1 Film deposition using a finger type shadow frame 有权
标题翻译：使用手指型阴影框的胶片沉积
公开(公告)号：US06355108B1
公开(公告)日：2002-03-12
申请号：US09338245
申请日：1999-06-22
申请人： Tae Kyung Won , Quanyuan Shang , Robert M. Robertson , Soo Young Choi , Kam S. Law , Robert I. Greene , John M. White
发明人： Tae Kyung Won , Quanyuan Shang , Robert M. Robertson , Soo Young Choi , Kam S. Law , Robert I. Greene , John M. White
IPC分类号： C23C1600
CPC分类号： C23C16/24 , C23C16/345 , C23C16/4583 , C23C16/4585 , H01J37/32623
摘要： The present invention relates generally to a clamping and alignment assembly for a substrate processing system. The clamping and aligning assembly generally includes a shadow frame, a floating plasma shield and a plurality of insulating alignment pins. The shadow frame comprises a plurality of tabs extending inwardly therefrom and is shaped to accommodate a substrate. The tabs comprise protruding contact surfaces for stabilizing a substrate on a support member during processing. The insulating alignment pins are disposed at a perimeter of a movable support member and cooperate with an alignment recess formed in the shadow frame to urge the shadow frame into a desired position. Preferably, the floating plasma shield is disposed on the insulating alignment pins in spaced relationship between the support member and the shadow frame to shield the perimeter of the support member during processing.
摘要翻译：本发明一般涉及用于衬底处理系统的夹紧和对准组件。夹持和对准组件通常包括阴影框架，浮动等离子体屏蔽件和多个绝缘对准销钉。阴影框架包括从其向内延伸的多个突片，并且成形为容纳衬底。突片包括用于在加工期间稳定支撑构件上的基板的突出接触表面。绝缘对准销布置在可移动支撑构件的周边处，并与形成在阴影框架中的对准凹槽配合，以将阴影框架推动到期望的位置。优选地，浮动等离子体屏蔽以间隔开的关系设置在绝缘对准销上，在支撑构件和阴影框架之间，以在加工期间屏蔽支撑构件的周边。

2. 发明授权

US06825134B2 Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow 有权
标题翻译：通过在连续气流中交替地脉冲前驱和高频功率沉积膜层
公开(公告)号：US06825134B2
公开(公告)日：2004-11-30
申请号：US10254627
申请日：2002-09-24
申请人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
发明人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
IPC分类号： H01L21471
CPC分类号： C23C16/45542 , C23C16/402 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/3143 , H01L21/31612 , H01L21/31683 , H01L21/318 , H01L21/3185 , H01L21/32105 , H01L21/3211 , H01L29/66765
摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.
摘要翻译：描述了膜层沉积的方法。使用循环沉积工艺沉积膜层。循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。

3. 发明授权

US07732010B2 Method for supporting a glass substrate to improve uniform deposition thickness 有权
标题翻译：支撑玻璃基板以改善均匀沉积厚度的方法
公开(公告)号：US07732010B2
公开(公告)日：2010-06-08
申请号：US11406136
申请日：2006-04-18
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
IPC分类号： C23C16/00
CPC分类号： H01J37/32082 , C23C16/4581 , C25D11/04 , C25D11/16 , C25D11/18
摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.
摘要翻译：一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上基板接触面积。

4. 发明授权

US06024044A Dual frequency excitation of plasma for film deposition 失效
标题翻译：用于膜沉积的等离子体的双频激发
公开(公告)号：US06024044A
公开(公告)日：2000-02-15
申请号：US948279
申请日：1997-10-09
申请人： Kam S. Law , Robert M. Robertson , Quanyuan Shang , Jeff Olsen , Carl Sorensen
发明人： Kam S. Law , Robert M. Robertson , Quanyuan Shang , Jeff Olsen , Carl Sorensen
IPC分类号： C23C16/505 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/205 , C23C16/50
CPC分类号： H01J37/32165 , C23C16/5096 , C23C16/517
摘要： An apparatus deposits a high quality film onto a transparent substrate in a reactor. The transparent substrate may be made of glass, quartz or a polymer such as plastic. The transparent substrate is heated in a process chamber and a process gas stream is introduced into the process chamber. The apparatus generates a high frequency power output and a low frequency power output from a high frequency power supply and a low frequency power supply, respectively. The high frequency power output is generated at a frequency of about thirteen megahertz or more, and at a power from about one to five kilowatts, while the low frequency power output is generated at a frequency of about two megahertz or less, and at a power from about 300 to two kilowatts. The high frequency power output and the low frequency power output are superimposed and used to excite a plasma from the process gas stream at a pressure between about 0.4 Torr and 3 Torr, and at a temperature between about 250.degree. C. and 450.degree. C. to deposit a smooth thin film onto the transparent substrate.
摘要翻译：一种装置将高质量的膜沉积在反应器中的透明基板上。透明基材可以由玻璃，石英或聚合物如塑料制成。将透明基板在处理室中加热并将工艺气体流引入处理室。该装置分别从高频电源和低频电源产生高频功率输出和低频功率输出。高频功率输出以大约十三兆赫或更高的频率和大约一到五千瓦的功率产生，而低频功率输出是以大约2兆赫或更小的频率产生的约300至2千瓦。高频功率输出和低频功率输出被叠加并用于在约0.4托和3托之间的压力下以及在约250℃至450℃之间的温度下从工艺气流中激发等离子体。以将平滑的薄膜沉积在透明基板上。

5. 发明授权

US07029529B2 Method and apparatus for metallization of large area substrates 失效
标题翻译：用于大面积基板金属化的方法和装置
公开(公告)号：US07029529B2
公开(公告)日：2006-04-18
申请号：US10247403
申请日：2002-09-19
申请人： Kam S. Law , Robert Z. Bachrach , John M. White , Quanyuan Shang
发明人： Kam S. Law , Robert Z. Bachrach , John M. White , Quanyuan Shang
IPC分类号： B05C1/02 , B05C13/02
CPC分类号： C23C18/1632 , B05D1/002 , B05D7/142 , C23C18/1605 , C23C18/1608 , H01L21/288 , H01L21/76838 , H05K3/12 , H05K3/182
摘要： A system and method for processing large area substrates. In one embodiment, a system for processing large area substrates includes prep station, a stamping station and a stamp that is automatically moved between the stamping station and the prep station. The stamping station is adapted to retain a large area substrate thereon. The stamp has a patterned bottom surface that is adapted for microcontact printing. The prep station is for applying a precursor to the patterned bottom surface of the stamp. In one embodiment, a method for processing large area substrates includes the steps of disposing a large area substrate on a platen, inking a stamp adapted for microcontact printing, and automatically contacting a bottom of the stamp to the large area substrate supported on a platen.
摘要翻译：一种用于处理大面积基板的系统和方法。在一个实施例中，用于处理大面积基板的系统包括准备台，冲压站和在冲压站和准备站之间自动移动的印模。冲压站适于在其上保持大面积的基板。印模具有适于微接触印刷的图案底面。准备站用于将前体施加到印模的图案化底表面。在一个实施例中，一种用于处理大面积衬底的方法包括以下步骤：将大面积衬底设置在压板上，上墨适用于微接触印刷，以及自动地将印模底部接触到支撑在压板上的大面积衬底。

6. 发明授权

US06887776B2 Methods to form metal lines using selective electrochemical deposition 失效
标题翻译：使用选择性电化学沉积形成金属线的方法
公开(公告)号：US06887776B2
公开(公告)日：2005-05-03
申请号：US10412620
申请日：2003-04-11
申请人： Quanyuan Shang , John M. White , Robert Z. Bachrach , Kam S. Law
发明人： Quanyuan Shang , John M. White , Robert Z. Bachrach , Kam S. Law
IPC分类号： H01L21/336 , H01L29/423 , H01L29/49 , H01L29/786 , H01L21/44
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765
摘要： Methods are provided for forming a transistor for use in an active matrix liquid crystal display (AMLCD). In one aspect a method is provided for processing a substrate including providing a glass substrate, depositing a conductive seed layer on a surface of the glass substrate, depositing a resist material on the conductive seed layer, patterning the resist layer to expose portions of the conductive seed layer, and depositing a metal layer on the exposed portions of the conductive seed layer by an electrochemical technique.
摘要翻译：提供了用于形成用于有源矩阵液晶显示器（AMLCD）的晶体管的方法。在一个方面，提供了一种处理衬底的方法，包括提供玻璃衬底，在玻璃衬底的表面上沉积导电种子层，在导电种子层上沉积抗蚀剂材料，图案化抗蚀剂层以暴露部分导电种子层，以及通过电化学技术在导电种子层的暴露部分上沉积金属层。

7. 发明授权

US06942753B2 Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition 有权
标题翻译：用于大面积等离子体增强化学气相沉积的气体分配板组件
公开(公告)号：US06942753B2
公开(公告)日：2005-09-13
申请号：US10417592
申请日：2003-04-16
申请人： Soo Young Choi , Quanyuan Shang , Robert I. Greene , Li Hou
发明人： Soo Young Choi , Quanyuan Shang , Robert I. Greene , Li Hou
IPC分类号： C23C16/44 , C23C16/455 , C23C16/509 , C23C16/00 , C23C16/452 , C23F1/00 , H01L21/00
CPC分类号： C23C16/45565 , C23C16/5096
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having a plurality of gas passages passing between an upstream side and a downstream side of the diffuser plate. At least one of the gas passages includes a first hole and a second hole coupled by an orifice hole. The first hole extends from the upstream side of the diffuser plate while the second hole extends from the downstream side. The orifice hole has a diameter less than the respective diameters of the first and second holes.
摘要翻译：提供了用于在处理室中分配气体的气体分配板的实施例。在一个实施例中，气体分配板包括具有通过扩散板的上游侧和下游侧之间的多个气体通道的扩散板。至少一个气体通道包括第一孔和通过孔口联接的第二孔。第一孔从扩散板的上游侧延伸，而第二孔从下游侧延伸。孔口的直径小于第一孔和第二孔的直径。

8. 发明授权

US08372205B2 Reducing electrostatic charge by roughening the susceptor 有权
标题翻译：通过粗化基座来减少静电电荷
公开(公告)号：US08372205B2
公开(公告)日：2013-02-12
申请号：US11182168
申请日：2005-07-15
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
IPC分类号： H01L21/306 , C23C16/00 , C23F1/00
CPC分类号： C23C16/4581 , B24C1/06 , B24C1/10 , B24C3/322 , C23C16/4404 , C23C16/545 , C25D11/04 , C25D11/16 , C25D11/18 , H01J37/32082 , H01J37/32477 , H01J37/32559 , H01J37/32715 , H01L21/68757
摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly includes an electrically conductive body having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating.
摘要翻译：提供了一种基板支撑件及其制造方法。在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。以基板支撑表面为中心的涂层的至少一部分具有介于约200至约2000微英寸之间的表面光洁度。在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于在其上支撑约200至约2000微英寸的衬底。在一个实施例中，衬底支撑组件包括具有衬底支撑表面的导电体，适于支撑导电体的衬底支撑结构，并且导电体被电绝缘涂层覆盖。

9. 发明授权

US07122962B2 Plasma display panel with a low K dielectric layer 失效
标题翻译：具有低K电介质层的等离子显示面板
公开(公告)号：US07122962B2
公开(公告)日：2006-10-17
申请号：US10460837
申请日：2003-06-11
申请人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
发明人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
IPC分类号： H01J17/49
CPC分类号： H01J11/38 , H01J11/12
摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.
摘要翻译：包括低k电介质层的等离子体显示面板。在一个实施例中，电介质层包括氟掺杂氧化硅层，例如SiOF层。在另一个实施例中，电介质层包括Black Diamond TM层。在某些实施例中，覆盖层例如SiN或SiON沉积在电介质层上。

10. 发明授权

US06880561B2 Fluorine process for cleaning semiconductor process chamber 失效
标题翻译：用于清洗半导体工艺室的氟工艺
公开(公告)号：US06880561B2
公开(公告)日：2005-04-19
申请号：US10430955
申请日：2003-05-05
申请人： Haruhiro Harry Goto , William R. Harshbarger , Quanyuan Shang , Kam S. Law
发明人： Haruhiro Harry Goto , William R. Harshbarger , Quanyuan Shang , Kam S. Law
IPC分类号： B08B5/00 , B08B7/00 , C23C16/44 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065 , B08B9/00
CPC分类号： C23C16/4405 , Y02C20/30 , Y02P70/605 , Y10S134/902 , Y10S438/905
摘要： A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6 and SF6.
摘要翻译：使用分子氟气（F 2 N 2）作为主要前体试剂从半导体处理室的内部除去残留物的方法。在一个实施方案中，分子氟的一部分在等离子体中分解以产生原子氟，并且将所得到的原子氟和分子氟的混合物供应到其内部要清洁的室。在另一个实施方案中，分子氟气清洁半导体处理室而没有任何等离子体激发。与通常用于室内清洗的含氟气体化合物不同，分子氟气具有不是全球变暖气体的优点，例如NF 3 N，C 2 F 6＆lt; 6＆gt;和SF＆lt; 6＆gt ;.

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