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    • 3. 发明授权
    • Dielectric ceramic materials with insulated boundaries between crystal
grains, and process for preparation
    • 介电陶瓷材料与晶粒之间具有绝缘边界,以及制备工艺
    • US4405478A
    • 1983-09-20
    • US443781
    • 1982-11-22
    • Kiyoshi MuraseNobutatsu YamaokaMasayuki Fujimoto
    • Kiyoshi MuraseNobutatsu YamaokaMasayuki Fujimoto
    • C04B35/47H01G4/12C04B35/46H01B3/12
    • H01G4/1281C04B35/47
    • A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 90.68-99.88 wt. % SrTiO.sub.3, 0.07-5.32 wt. % Nb.sub.2 O.sub.5, and 0.05-4.00 wt. % GeO.sub.2. The secondary ingredients comprise 0.02-0.10 wt. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.03-2.90 wt. % PbO, 0.11-4.34 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.
    • 由主要和次要成分组成的介电陶瓷材料,其组合形成多晶陶瓷本身,并且绝缘物质在陶瓷本身的整个晶界处扩散,以增加表观相对介电常数。 主要成分以相对比例包含90.68-99.88wt。 %SrTiO 3,0.07-5.32wt。 %Nb2O5和0.05-4.00wt。 %GeO2。 次要成分包含0.02-0.10wt。 部分SiO2和0.01-0.03wt。 部分Al2O3相对于100wt。 主要成分的一部分,SiO 2与Al 2 O 3的重量比为1.5-5.0。 绝缘物质包含0.03-2.90重量% %PbO,0.11-4.34wt。 %Bi 2 O 3和0.001-0.18wt。 %B2O3相对于初级和次级成分的总重量。 在陶瓷体的制造中,绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。 然后将涂覆的陶瓷体加热,使绝缘物质扩散到其晶间界面。
    • 4. 发明授权
    • Dielectric ceramic materials with insulated boundaries between crystal
grains, and process for preparation
    • 介电陶瓷材料与晶粒之间具有绝缘边界,以及制备工艺
    • US4405474A
    • 1983-09-20
    • US443775
    • 1982-11-22
    • Kiyoshi MuraseNobutatsu YamaokaMasayuki Fujimoto
    • Kiyoshi MuraseNobutatsu YamaokaMasayuki Fujimoto
    • H01B3/12C04B35/47H01G4/12C04B35/46
    • H01G4/1281C04B35/47
    • A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise in relative proportions, 96.70-99.83 wt. % SrTiO.sub.3, 0.15-2.30 wt. % WO.sub.3, and 0.02-1.00 wt. % CuO. The secondary ingredients comprise 0.02-0.10 wt %. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.003-2.83 wt. % PbO, 0.10-4.30 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.
    • 由主要和次要成分组成的介电陶瓷材料,其组合形成多晶陶瓷本身,并且绝缘物质在陶瓷本身的整个晶界处扩散,以增加表观相对介电常数。 主要成分包括相对比例为96.70-99.83wt。 %SrTiO 3,0.15-2.30重量% %WO3和0.02-1.00wt。 %CuO。 次要成分占0.02-0.10重量%。 部分SiO2和0.01-0.03wt。 部分Al2O3相对于100wt。 主要成分的一部分,SiO 2与Al 2 O 3的重量比为1.5-5.0。 绝缘物质包含0.003-2.83wt。 %PbO,0.10-4.30wt。 %Bi 2 O 3和0.001-0.18wt。 %B2O3相对于初级和次级成分的总重量。 在陶瓷体的制造中,绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。 然后将涂覆的陶瓷体加热,使绝缘物质扩散到其晶间界面。
    • 5. 发明授权
    • Dielectric ceramic materials with insulated boundaries between crystal
grains, and process for preparation
    • 介电陶瓷材料与晶粒之间具有绝缘边界,以及制备工艺
    • US4405472A
    • 1983-09-20
    • US443773
    • 1982-11-22
    • Kiyoshi MuraseNobutatsu YamaokaMasayuki Fujimoto
    • Kiyoshi MuraseNobutatsu YamaokaMasayuki Fujimoto
    • H01B3/12C04B35/47H01G4/12C04B35/46
    • C04B35/47H01G4/1281
    • A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 95.18-99.65 wt. % SrTiO.sub.3, 0.33-3.32 wt. % Ta.sub.2 O.sub.5, and 0.02-1.50 wt. % CuO. The secondary ingredients comprise 0.02-0.10 wt. % part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.50 to 5.0. The insulating substances comprise 0.03-2.75 wt. % PbO, 0.11-4.22 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.
    • 由主要和次要成分组成的介电陶瓷材料,其组合形成多晶陶瓷本身,并且绝缘物质在陶瓷本身的整个晶界处扩散,以增加表观相对介电常数。 主要成分以相对比例包含95.18-99.65wt。 %SrTiO3,0.33-3.32wt。 %Ta2O5和0.02-1.50wt。 %CuO。 次要成分包含0.02-0.10wt。 %部分SiO 2和0.01-0.03重量% 部分Al2O3相对于100wt。 主要成分的一部分,SiO 2与Al 2 O 3的重量比为1.50〜5.0。 绝缘物质包含0.03-2.75重量% %PbO,0.11-4.22wt。 %Bi 2 O 3和0.001-0.18wt。 %B2O3相对于初级和次级成分的总重量。 在陶瓷体的制造中,绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。 然后将涂覆的陶瓷体加热,使绝缘物质扩散到其晶间界面。
    • 8. 发明授权
    • Dielectric ceramic materials with insulated boundaries between crystal
grains, and process for preparation
    • 介电陶瓷材料与晶粒之间具有绝缘边界,以及制备工艺
    • US4405479A
    • 1983-09-20
    • US443782
    • 1982-11-22
    • Kiyoshi MuraseNobutatsu YamaokaMasayuki Fujimoto
    • Kiyoshi MuraseNobutatsu YamaokaMasayuki Fujimoto
    • C04B35/46C04B35/47H01B3/12H01G4/12
    • H01G4/1281C04B35/47
    • A dielectric ceramic material composed of primary and secondary ingredients forming in combination a polycrystalline ceramic proper, and of insulating substances diffused throughout the intergranular boundaries of the ceramic proper for an increase in apparent relative dielectric constant. The primary ingredients comprise, in relative proportions, 95.20-99.80 wt. % SrTiO.sub.3, 0.15-2.30 wt. % WO.sub.3, and 0.05-2.50 wt. % ZnO. The seconary ingredients comprise 0.02-0.10 wt. part SiO.sub.2 and 0.01-0.03 wt. part Al.sub.2 O.sub.3 with respect to 100 wt. parts of the primary ingredients, with the weight ratio of SiO.sub.2 to Al.sub.2 O.sub.3 being from 1.5 to 5.0. The insulating substances comprise 0.03-2.75 wt. % PbO, 0.11-4.23 wt. % Bi.sub.2 O.sub.3, and 0.001-0.18 wt. % B.sub.2 O.sub.3 with respect to the total weight of the primary and the secondary ingredients. In the fabrication of bodies of the ceramic the mixture of the insulating substances is coated or otherwise layered on polycrystalline ceramic bodies prepared from the primary and secondary ingredients. The coated ceramic bodies are then heated to cause diffusion of the insulating substances throughout their intergranular boundaries.
    • 由主要和次要成分组成的介电陶瓷材料,其组合形成多晶陶瓷本身,并且绝缘物质在陶瓷本身的整个晶界处扩散,以增加表观相对介电常数。 主要成分以相对比例包含95.20-99.80wt。 %SrTiO 3,0.15-2.30重量% %WO3和0.05-2.50wt。 %ZnO。 所述第二成分包含0.02-0.10wt。 部分SiO2和0.01-0.03wt。 部分Al2O3相对于100wt。 主要成分的一部分,SiO 2与Al 2 O 3的重量比为1.5-5.0。 绝缘物质包含0.03-2.75重量% %PbO,0.11-4.23wt。 %Bi 2 O 3和0.001-0.18wt。 %B2O3相对于初级和次级成分的总重量。 在陶瓷体的制造中,绝缘物质的混合物被涂覆或以其它方式分层在由初级和次级成分制备的多晶陶瓷体上。 然后将涂覆的陶瓷体加热,使绝缘物质扩散到其晶间界面。
    • 10. 发明授权
    • Method for producing n-propyl acetate
    • 乙酸正丙酯的制造方法
    • US08293936B2
    • 2012-10-23
    • US12993224
    • 2009-05-20
    • Shigeru HatanakaMasayuki Fujimoto
    • Shigeru HatanakaMasayuki Fujimoto
    • C07C67/283
    • C07C67/283C07C69/14
    • Provided is a method for producing n-propyl acetate capable of suppressing the deterioration of a hydrogenation catalyst to such an extent that the catalyst can be industrially used, for example, in the case where n-propyl acetate is produced by performing a hydrogenation reaction in the presence of the hydrogenation catalyst using, as a raw material liquid, a liquid containing allyl acetate or the like which has been produced from propylene, oxygen and acetic acid and obtained using a purification process such as distillation. In such a method for producing n-propyl acetate, the concentration of a formyl group-containing compound (such as acrolein, propionaldehyde or 2-methylcrotonaldehyde) and the concentration of an acryloyloxy group-containing compound (such as acrylic acid or allyl acrylate) in the raw material liquid are respectively set to 100 ppm by mass or less. As a result, the deterioration of the hydrogenation catalyst can be suppressed to such an extent that the catalyst can be industrially used.
    • 提供一种生产能够抑制氢化催化剂劣化的乙酸正丙酯的方法,使得催化剂可以在工业上使用,例如在通过进行氢化反应制备乙酸正丙酯的情况下 使用由丙烯,氧和乙酸制备并使用蒸馏等纯化方法得到的含有乙酸烯丙酯等的液体作为原料液体的存在。 在这种乙酸正丙酯的制造方法中,含有甲酰基的化合物(丙烯醛,丙醛或2-甲基巴豆醛)的浓度和含丙烯酰氧基的化合物(丙烯酸或丙烯酸烯丙酯)的浓度, 在原料液中分别设定为100质量ppm以下。 结果,可以将氢化催化剂的劣化抑制到可以在工业上使用催化剂的程度。