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    • 8. 发明授权
    • Memory element and memory device
    • 存储器元件和存储器件
    • US08455967B2
    • 2013-06-04
    • US13216474
    • 2011-08-24
    • Yutaka HigoMasanori HosomiHiroyuki OhmoriKazuhiro BesshoKazutaka YamaneHiroyuki Uchida
    • Yutaka HigoMasanori HosomiHiroyuki OhmoriKazuhiro BesshoKazutaka YamaneHiroyuki Uchida
    • H01L29/82H01L43/00G11C11/00
    • G11C11/16G11C11/161
    • There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy.
    • 公开了一种存储元件,其包括层叠结构,该分层结构包括具有垂直于膜面的磁化和其信息方向变化的磁化方向的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层之间的绝缘层。 自旋极化的电子沿分层结构的层叠方向注入,由此存储层的磁化方向变化,并且相对于存储层执行信息的记录,有效的抗磁场的大小 存储层接收小于存储层的饱和磁化量,并且存储层和磁化固定层具有使界面磁各向异性能量变得大于反磁能的方式的膜厚度。