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1. 发明申请

US20090255807A1 Quantum dot manipulating method and quantum dot production/manipulation apparatus 有权
标题翻译：量子点操作方法和量子点生产/操纵装置
公开(公告)号：US20090255807A1
公开(公告)日：2009-10-15
申请号：US12379583
申请日：2009-02-25
申请人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
发明人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
IPC分类号： C23C14/34
CPC分类号： G06N99/002 , B82Y10/00 , Y10S438/962
摘要： A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots.Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein. A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.
摘要翻译：提供了一种量子点操作方法和生成/操作装置，其可以以点数的光学应用所需的百分数量级或以下来控制大量生成的量子点的尺寸。通过在其中含有超流体氦（7）的量子点制造/操作装置（1）中将点生成激光器（4a）照射到固体物体（3）上而产生量子点。点操作激光器（5a）照射到所产生的量子点上以操纵量子点。

2. 发明授权

US08357272B2 Quantum dot manipulating method and quantum dot production/manipulation apparatus 有权
公开(公告)号：US08357272B2
公开(公告)日：2013-01-22
申请号：US12379583
申请日：2009-02-25
申请人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
发明人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
IPC分类号： C23C14/34
CPC分类号： G06N99/002 , B82Y10/00 , Y10S438/962
摘要： A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots.Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein. A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.

3. 发明申请

US20070196937A1 Quantum Dot Manipulating Method And Quantum Dot Production/Manipulation Apparatus 有权
标题翻译：量子点操作方法和量子点生产/操纵装置
公开(公告)号：US20070196937A1
公开(公告)日：2007-08-23
申请号：US10592491
申请日：2005-03-09
申请人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
发明人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
IPC分类号： H01L21/00
CPC分类号： G06N99/002 , B82Y10/00 , Y10S438/962
摘要： A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots. Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein. A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.
摘要翻译：提供了一种量子点操作方法和生成/操作装置，其可以以点数的光学应用所需的百分数量级或以下来控制大量生成的量子点的尺寸。通过在其中含有超流体氦（7）的量子点生产/操作装置（1）中将点生成激光器（4a）照射到固体物体（3）上来产生量子点。点操作激光器（5a）照射到产生的量子点上以操纵量子点。

4. 发明授权

US07662731B2 Quantum dot manipulating method and quantum dot production/manipulation apparatus 有权
标题翻译：量子点操作方法和量子点生产/操纵装置
公开(公告)号：US07662731B2
公开(公告)日：2010-02-16
申请号：US10592491
申请日：2005-03-09
申请人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
发明人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
IPC分类号： H01L21/00
CPC分类号： G06N99/002 , B82Y10/00 , Y10S438/962
摘要： A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots.Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein. A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.
摘要翻译：提供了一种量子点操作方法和生成/操作装置，其可以以点数的光学应用所需的百分数量级或以下来控制大量生成的量子点的尺寸。通过在其中含有超流体氦（7）的量子点制造/操作装置（1）中将点生成激光器（4a）照射到固体物体（3）上而产生量子点。点操作激光器（5a）照射到所产生的量子点上以操纵量子点。

5. 发明授权

US08175132B2 Laser device and lasing method 有权
标题翻译：激光装置和激光方法
公开(公告)号：US08175132B2
公开(公告)日：2012-05-08
申请号：US10589243
申请日：2004-08-11
申请人： Tadashi Itoh , Masaaki Ashida
发明人： Tadashi Itoh , Masaaki Ashida
IPC分类号： H01S3/09
CPC分类号： H01S5/14 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01S3/094092 , H01S3/169 , H01S5/0014 , H01S5/041 , H01S5/3412
摘要： A laser device which causes lasing with a use of a semiconductor quantum dot is provided with: a laser member (11) in which the semiconductor quantum dot is formed; a resonator (14) for resonating light generated in the laser member (11); and a pump laser (15) for irradiating the laser member (11) with excitation light whose energy corresponds to two-photon resonant excitation, so as to form a biexciton state in the semiconductor quantum dot by the two-photon resonant excitation. In this way, a laser device which enables lasing using efficient light emission is realized.
摘要翻译：使用半导体量子点引起激光的激光装置设置有：形成有半导体量子点的激光部件（11）; 谐振器（14），用于谐振在所述激光器件（11）中产生的光; 以及激光器（11）用能量对应于双光子共振激发的激发光照射激光器（11）的泵浦激光器（15），以便通过双光子共振激发在半导体量子点中形成双键状态。以这种方式，实现了能够使用高效发光的激光的激光装置。

6. 发明申请

US20090022192A1 Laser Device and Lasing Method 有权
标题翻译：激光装置和激光方法
公开(公告)号：US20090022192A1
公开(公告)日：2009-01-22
申请号：US10589243
申请日：2004-08-11
申请人： Tadashi Itoh , Masaaki Ashida
发明人： Tadashi Itoh , Masaaki Ashida
IPC分类号： H01S5/00
CPC分类号： H01S5/14 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01S3/094092 , H01S3/169 , H01S5/0014 , H01S5/041 , H01S5/3412
摘要： A laser device which causes lasing with a use of a semiconductor quantum dot is provided with: a laser member (11) in which the semiconductor quantum dot is formed; a resonator (14) for resonating light generated in the laser member (11); and a pump laser (15) for irradiating the laser member (11) with excitation light whose energy corresponds to two-photon resonant excitation, so as to form a biexciton state in the semiconductor quantum dot by the two-photon resonant excitation. In this way, a laser device which enables lasing using efficient light emission is realized.
摘要翻译：使用半导体量子点引起激光的激光装置设置有：形成有半导体量子点的激光部件（11）; 谐振器（14），用于谐振在所述激光器件（11）中产生的光; 以及激光器（11）用能量对应于双光子共振激发的激发光照射激光器（11）的泵浦激光器（15），以便通过双光子共振激发在半导体量子点中形成双键状态。以这种方式，实现了能够使用高效发光的激光的激光装置。

7. 发明申请

US20070090341A1 Group i-vii semiconductor single crystal thin film and process for producing same 失效
标题翻译： i-vii族半导体单晶薄膜及其制造方法
公开(公告)号：US20070090341A1
公开(公告)日：2007-04-26
申请号：US10589003
申请日：2004-11-30
申请人： Tadashi Itoh , Masaaki Ashida
发明人： Tadashi Itoh , Masaaki Ashida
IPC分类号： H01L29/08 , H01L21/28 , H01L29/06 , H01L21/3205 , H01L39/00
CPC分类号： H01L21/02568 , C30B23/02 , C30B29/12 , H01L21/0242 , H01L21/02488 , H01L21/02521 , H01L21/02631
摘要： A CaF2 buffer layer (3) is formed on a CaF2 (111) substrate (2) by an MBE method. Furthermore, a CuCl thin film is grown on the CaF2 buffer layer (3) by the MBE method while irradiating it with an electron beam to form an electro beam irradiation film (1a). Subsequently, a CuCl thin film is grown by the MBE method without the irradiation of electron beam to form an electron beam non-irradiation film (1b), thereby thus forming a CuCl thin film (a) including the electron beam irradiation film (1a) and the electron beam non-irradiation film (1b). Consequently, a CuCl thin film (1) exhibiting high planarity and crystallinity can be formed.
摘要翻译：通过MBE法在CaF 2（111）衬底（2）上形成CaF 2 N 2缓冲层（3）。此外，通过MBE法在CaF 2 N 2缓冲层（3）上生长CuCl薄膜，同时用电子束照射CuCl薄膜以形成电子束照射膜（1a）。随后，通过MBE方法生长CuCl薄膜而不照射电子束以形成电子束非照射膜（1b），由此形成包括电子束照射膜（1）的CuCl薄膜（a） a）和电子束非照射膜（1b）。因此，可以形成表现出高平坦度和结晶度的CuCl薄膜（1）。

8. 发明授权

US07683457B2 Group I-VII semiconductor single crystal thin film and process for producing same 失效
标题翻译： I-VII族半导体单晶薄膜及其制造方法
公开(公告)号：US07683457B2
公开(公告)日：2010-03-23
申请号：US10589003
申请日：2004-11-30
申请人： Tadashi Itoh , Masaaki Ashida
发明人： Tadashi Itoh , Masaaki Ashida
IPC分类号： H01L31/0256
CPC分类号： H01L21/02568 , C30B23/02 , C30B29/12 , H01L21/0242 , H01L21/02488 , H01L21/02521 , H01L21/02631
摘要： A CaF2 buffer layer (3) is formed on a CaF2 (111) substrate (2) by an MBE method. Furthermore, a CuCl thin film is grown on the CaF2 buffer layer (3) by the MBE method while irradiating it with an electron beam to form an electro beam irradiation film (1a). Subsequently, a CuCl thin film is grown by the MBE method without the irradiation of electron beam to form an electron beam non-irradiation film (1b), thereby thus forming a CuCl thin film (a) including the electron beam irradiation film (1a) and the electron beam non-irradiation film (1b). Consequently, a CuCl thin film (1) exhibiting high planarity and crystallinity can be formed.
摘要翻译：通过MBE法在CaF 2（111）衬底（2）上形成CaF 2缓冲层（3）。此外，通过MBE法在CaF 2缓冲层（3）上生长CuCl薄膜，同时用电子束照射形成电子束照射膜（1a）。随后，通过MBE方法生长CuCl薄膜而不照射电子束以形成电子束非照射膜（1b），由此形成包括电子束照射膜（1a）的CuCl薄膜（a）和电子束非照射膜（1b）。因此，可以形成表现出高平坦度和结晶度的CuCl薄膜（1）。

9. 发明授权

US07787122B2 Optical waveform measurement device and measurement method thereof, complex refractive index measurement device and measurement method thereof, and computer program recording medium containing the program 有权
$Optical waveform measurement device and measurement method thereof, complex refractive index measurement device and measurement method thereof, and computer program recording medium containing the program$
标题翻译：光波形测量装置及其测量方法，复合折射率测量装置及其测量方法以及包含程序的计算机程序记录介质
公开(公告)号：US07787122B2
公开(公告)日：2010-08-31
申请号：US10561280
申请日：2004-06-18
申请人： Shingo Saito , Masaru Iida , Masaaki Ashida
发明人： Shingo Saito , Masaru Iida , Masaaki Ashida
IPC分类号： G01N21/00
CPC分类号： G01J11/00 , G01N21/359 , G01N21/39 , G01N21/41
摘要： A light-waveform measuring device and method include a complex-refractive-index measuring device and a computer-program recording medium An electric field of an electromagnetic wave, in a light region having wavelengths smaller than those of electromagnetic waves in a near-infrared region, is measured, and time-varying waveforms are outputted. Gate-pulse-light generating means, measurement-light generating means and light-detecting means for detecting measurement light, are included, The measurement light is coherent light having a wavelength smaller than those of a near-infrared region. The gate pulse light is coherent light with a pulse width smaller than a period of the measurement light. A physical quantity, based on carriers generated from the measurement light and the gate pulse light is measured.
摘要翻译：光波形测量装置和方法包括复折射率测量装置和计算机程序记录介质在具有小于近红外区域中的电磁波的波长的光区域中的电磁波的电场，并输出时变波形。包括门脉冲光产生装置，测量光产生装置和用于检测测量光的光检测装置。测量光是具有比近红外区域的波长小的波长的相干光。门脉冲光是具有小于测量光的周期的脉冲宽度的相干光。测量基于从测量光和门脉冲光产生的载流子的物理量。

10. 发明授权

US07444981B2 Internal-combustion engine and method of disposing ignition plug thereof 失效
标题翻译：内燃机及其火花塞的配置方法
公开(公告)号：US07444981B2
公开(公告)日：2008-11-04
申请号：US11794425
申请日：2006-04-13
申请人： Masaaki Ashida
发明人： Masaaki Ashida
IPC分类号： F02P15/02 , F02P15/08
CPC分类号： F02P15/02
摘要： An internal-combustion engine is disclosed in which a pair of inlet valves and a pair of outlet valves are provided within the combustion chamber formed in each of a row of cylinders. A first ignition plug is disposed in the cylinder head within a central area of the combustion chamber in plan view. Second and third ignition plugs are disposed in the cylinder head at opposite peripheral portions of the combustion chamber positioned approximately along the first axis direction in plan view, the second and third ignition plugs are arranged so that the discharge electrode portions of the second and third ignition plugs being inclined inwardly of the combustion chamber in opposite directions and are substantially symmetrical relative with the first ignition plug in plan view. A line intersecting the discharge electrode portions of the second and third ignition plugs forms an oblique angle with the direction of the row of cylinders in plan view.
摘要翻译：公开了一种内燃机，其中在一排气缸中形成的燃烧室内设置有一对入口阀和一对出口阀。第一火花塞在平面图中设置在燃烧室的中心区域内的气缸盖内。第二和第三火花塞在平面图中大致沿着第一轴线方向定位在燃烧室的相对周边部分处设置在气缸盖中，第二和第三火花塞被布置成使得第二和第三点火的放电电极部分塞子在相反方向上向燃烧室的内侧倾斜，并且在平面图中相对于第一火花塞基本对称。与第二和第三火花塞的放电电极部分相交的一条线在俯视图中与该列气缸的方向形成倾斜角。

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