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1. 发明授权

US4817053A Apparatus for storing and retrieving information using an electron beam 失效
标题翻译：用于使用电子束存储和检索信息的装置
公开(公告)号：US4817053A
公开(公告)日：1989-03-28
申请号：US71309
申请日：1987-07-09
申请人： Tadashi Ikeda , Kazuo Shigematsu , Yasushi Miyauchi , Motoyasu Terao , Tetsuya Nishida , Shinkichi Horigome , Norio Ohta , Ryo Suzuki
发明人： Tadashi Ikeda , Kazuo Shigematsu , Yasushi Miyauchi , Motoyasu Terao , Tetsuya Nishida , Shinkichi Horigome , Norio Ohta , Ryo Suzuki
IPC分类号： G11B9/10 , G11B9/12 , G11C13/00
CPC分类号： G11B9/10
摘要： An electron beam memory system in which a phase transition type recording film is used as an information recording medium, and for recording information, a focused electron beam is selectively projected on desired positions of the recording film so as to locally heat the recording film and cause phase transition, while for retrieving information, an electron beam having energy at a degree not causing the phase transition is projected so as to utilize the fact that reflection or diffraction of the primary electron beam projected at the retrieval differs between the recorded regions and unrecorded regions.
摘要翻译：一种电子束存储系统，其中使用相变型记录膜作为信息记录介质，并且为了记录信息，聚焦的电子束被选择性地投影到记录膜的期望位置上，以便局部地加热记录膜并导致相位转移，而为了检索信息，投射具有不引起相变的程度的能量的电子束，以便利用在记录区域和未记录区域之间投影的一次电子束的反射或衍射不同的事实。

2. 发明授权

US5338178A Embossing metal hold 失效
标题翻译：压花金属扣
公开(公告)号：US5338178A
公开(公告)日：1994-08-16
申请号：US800455
申请日：1991-11-27
申请人： Keizo Kato , Shinkichi Horigome , Ryo Suzuki , Masaru Ito
发明人： Keizo Kato , Shinkichi Horigome , Ryo Suzuki , Masaru Ito
IPC分类号： B29D17/00 , G11B7/26 , B29C59/00
CPC分类号： B29D17/005 , G11B7/26 , Y10S425/81
摘要： According to the present invention, etching is used to form a concave and convex pattern corresponding to information on an embossing metal mold comprising a conductive layer and a layer which includes an Ni electric-plating layer, or an Ni electric-plating layer, so that the surface of the embossing metal mold will not be contaminated even if processing conditions are somewhat changed, and that the mold will have less defects. Thus, optical disk substrates of high quality can be produced. Besides, time required for manufacturing a stamper can be shortened.
摘要翻译：根据本发明，使用蚀刻来形成对应于包括导电层的压花金属模具和包括Ni电镀层或Ni电镀层的层的信息的凹凸图案，使得即使处理条件有些变化，压花金属模具的表面也不会被污染，并且模具将具有较少的缺陷。因此，可以制造高质量的光盘基板。此外，可以缩短制造压模所需的时间。

3. 发明授权

US5315577A Optical recording/reproducing by changing perpendicular magnetic anisotropy to non-perpendicular magnetic anisotropy 失效
标题翻译：通过将垂直磁各向异性改变为非垂直磁各向异性来进行光学记录/再现
公开(公告)号：US5315577A
公开(公告)日：1994-05-24
申请号：US846883
申请日：1992-03-06
申请人： Fumiyoshi Kirino , Junko Nakamura , Ryo Suzuki , Masafumi Yoshihiro , Yukinori Yamada , Norio Ohta
发明人： Fumiyoshi Kirino , Junko Nakamura , Ryo Suzuki , Masafumi Yoshihiro , Yukinori Yamada , Norio Ohta
IPC分类号： G11B5/02 , G11B7/007 , G11B11/10 , G11B11/105 , G11B11/14 , G11B7/125
CPC分类号： G11B11/10597 , G11B11/10506 , G11B11/10515 , G11B11/10586
摘要： An optical recording/ reproducing method which is characterized by irradiating a magnetic material having a perpendicular anisotropy with a laser beam to cause a change in the perpendicular anisotropy in the magnetic material to a non-perpendicular anisotropy thereby to record information; and by reproducing the information by detecting a change in a magneto-optic effect such as the Kerr effect. Also disclosed are an optical recording material and an optical recording device for use in the optical recording/reproducing method.
摘要翻译：一种光学记录/再现方法，其特征在于用激光束照射具有垂直各向异性的磁性材料，以使磁性材料中的垂直各向异性变化为非垂直各向异性从而记录信息; 并且通过检测诸如克尔效应的磁光效应的变化来再现信息。还公开了用于光学记录/再现方法的光学记录材料和光学记录装置。

4. 发明授权

US5814400A Magneto-optical recording medium and method 失效
标题翻译：磁光记录介质及方法
公开(公告)号：US5814400A
公开(公告)日：1998-09-29
申请号：US702936
申请日：1991-05-20
申请人： Fumiyoshi Kirino , Yoshinori Miyamura , Junko Nakamura , Norio Ohta , Masahiko Takahashi , Ryo Suzuki
发明人： Fumiyoshi Kirino , Yoshinori Miyamura , Junko Nakamura , Norio Ohta , Masahiko Takahashi , Ryo Suzuki
IPC分类号： G11B11/105 , G11B5/66
CPC分类号： G11B11/10584 , G11B11/10586 , Y10S428/90 , Y10T428/12493 , Y10T428/12806 , Y10T428/12861 , Y10T428/12875 , Y10T428/12931 , Y10T428/12937 , Y10T428/26 , Y10T428/265
摘要： A magneto-optical recording medium comprises in combination: a magneto-optical recording layer capable of writing or erasing information by a laser beam and an external magnetic field and of reading the information by a Kerr effect; and a substrate having the magneto-optical recording layer formed thereon. The magneto-optical recording layer has at least two layers, including a first magneto-optical recording layer and a second magneto-optical recording layer which are magnetically coupled together. The first magneto-optical recording layer is a layer providing a greater magneto-optical effect in a short light wavelength range than the second magneto-optical recording layer though that having less perpendicular magnetic energy than this, as is provided on an irradiation side of the laser beam. It provides advantages in both the magneto-optical effect and perpendicular anisotropy in consideration of the thicknesses or compositions of the first and second magneto-optical recording layers.
摘要翻译：一种磁光记录介质，其特征在于包括：能够通过激光束和外部磁场写入或擦除信息并通过克尔效应读取信息的磁光记录层; 以及在其上形成有磁光记录层的基板。磁光记录层具有至少两层，包括磁耦合在一起的第一磁光记录层和第二磁光记录层。第一磁光记录层是在比第二磁光记录层更短的光波长范围内提供比这更小的垂直磁能的磁光效应的层，如在第二磁光记录层的照射侧激光束。考虑到第一和第二磁光记录层的厚度或组成，它在磁光效应和垂直各向异性两方面都具有优势。

5. 发明授权

US4559617A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4559617A
公开(公告)日：1985-12-17
申请号：US635169
申请日：1984-07-27
申请人： Toshihiro Sato , Ryo Suzuki , Tadashi Ikeda , Masatoshi Takeshita , Yutaka Sugita
发明人： Toshihiro Sato , Ryo Suzuki , Tadashi Ikeda , Masatoshi Takeshita , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08 , H01F41/34
CPC分类号： G11C19/0816 , H01F41/34
摘要： A high density magnetic bubble memory device comprises first magnetic bubble propagation tracks formed through ion implantation and second magnetic bubble propagation tracks formed of a soft magnetic material. Regions exclusive of those destined for realization of the second magnetic bubble propagation tracks are deeply ion-implanted. Gaps between the adjacent soft magnetic material films are also deeply ion-implanted. The second magnetic bubble propagation tracks may be shallowly ion-implanted or not implanted with ions.
摘要翻译：高密度磁气泡存储装置包括通过离子注入形成的第一磁气体传播路径和由软磁材料形成的第二磁气泡传播路径。深入离子注入用于实现第二磁性气泡传播轨迹的区域。相邻的软磁性材料膜之间的间隙也被深度离子注入。第二个磁性气泡传播轨迹可以是浅离子注入的，也可以不用离子注入。

6. 发明授权

US4494216A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4494216A
公开(公告)日：1985-01-15
申请号：US451093
申请日：1982-12-20
申请人： Ryo Suzuki , Tadashi Ikeda , Masatoshi Takeshita , Naoki Kodama
发明人： Ryo Suzuki , Tadashi Ikeda , Masatoshi Takeshita , Naoki Kodama
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0891
摘要： Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implanted pattern and a second bubble propagation path formed of permalloy elements, both paths being spaced out from each other by a distance larger than or equal to the diameter of the magnetic bubble, and a propagation path connecting structure in which a hairpin-shaped conductor for connecting both propagation paths is disposed between them.
摘要翻译：公开了具有以离子注入图案形成的第一气泡传播路径和由坡莫合金元件形成的第二气泡传播路径的磁性气泡存储器件，两个路径彼此间隔开大于或等于磁气泡和传播路径连接结构，其中用于连接两个传播路径的发夹形导体设置在它们之间。

7. 发明授权

US4456975A Magnetic bubble memory device with guardrail 失效
标题翻译：带有护栏的磁性气泡记忆装置
公开(公告)号：US4456975A
公开(公告)日：1984-06-26
申请号：US345678
申请日：1982-02-04
申请人： Ryo Suzuki , Naoki Kodama , Tadashi Ikeda , Yutaka Sugita
发明人： Ryo Suzuki , Naoki Kodama , Tadashi Ikeda , Yutaka Sugita
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0808 , G11C19/0816
摘要： The magnetic bubble memory device according to this invention comprises an active magnetic bubble memory region formed by implanting ions into a layer of magnetic bubble material, a propagation loop having inner and outer propagation tracks formed by ion implantation so as to surround this region and to propagate captured magnetic bubbles along the circumference of this region, and at least one opening portion provided at the propagation loop so as to propagate magnetic bubbles in the inner propagation track to the outer propagation track.
摘要翻译：根据本发明的磁性气泡存储装置包括通过将离子注入到磁性气泡材料层中形成的主动气泡存储区域，传播回路具有通过离子注入形成的内部和外部传播轨道，以便围绕该区域并传播沿着该区域的圆周捕获磁气泡，以及设置在传播环路处的至少一个开口部分，以便将内部传播轨道中的气泡传播到外部传播轨道。

8. 发明授权

US4845671A Bloch line memory device 失效
标题翻译：布洛克线内存设备
公开(公告)号：US4845671A
公开(公告)日：1989-07-04
申请号：US225318
申请日：1988-07-28
申请人： Youji Maruyama , Tadashi Ikeda , Teruaki Takeuchi , Ryo Suzuki
发明人： Youji Maruyama , Tadashi Ikeda , Teruaki Takeuchi , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858
摘要： A Bloch line memory device and a method of erasing information in which, for erasure of a Bloch line pair representative of one bit of information and located in one end portion of one stripe domain, the stripe domain is stretched by decreasing the intensity of a bias magnetic field, an erasure Bloch line pair having a rotation of magnetization opposite to that of the to-be-erased Bloch line pair is injected into the end portion of the stretched stripe domain by supplying a current pulse signal to a conductor arranged substantially perpendicualr to the lengthwise direction of the stripe domain, and the stretched stripe domain is shrinked by restoring the intensity of the bias magnetic field, so that the to-be-erased Bloch line pair is combined with the erasure Bloch line pair to cancel the former.
摘要翻译：一种布洛赫线存储器件和一种擦除信息的方法，其中为了擦除代表一比特信息并位于一个条带域的一个端部中的布洛赫线对，条带域通过降低偏置强度而被拉伸将具有与被擦除的布洛赫线对相反的磁化旋转的擦除布洛赫线对通过将电流脉冲信号提供给布置在基本上延伸的导体上而被注入延伸条带域的端部，通过恢复偏置磁场的强度，条状域的长度方向和拉伸的条状域被收缩，使得被擦除的Bloch线对与擦除布洛赫线对组合以取消前者。

9. 发明授权

US4744051A Magnetic bubble memory device 失效
标题翻译：磁性气泡记忆装置
公开(公告)号：US4744051A
公开(公告)日：1988-05-10
申请号：US752587
申请日：1985-07-08
申请人： Toshihiro Sato , Tadashi Ikeda , Ryo Suzuki , Teruaki Takeuchi
发明人： Toshihiro Sato , Tadashi Ikeda , Ryo Suzuki , Teruaki Takeuchi
IPC分类号： G11C19/08
CPC分类号： G11C19/0883
摘要： A magnetic bubble memory device for implementing its high storage density for practical use is generally composed of ion-implanted elements occupying the most part of a minor loop, and other elements made of soft magnetic materials. The ion-implanted minor loop with a higher density is folded several times, and includes straight propagation tracks adjacent to each other and connected by an inside turn, with another straight propagation track having an outside turn facing the inside turn being placed between the adjacent straight tracks.
摘要翻译：用于实现其实际使用的高存储密度的磁气泡存储装置通常由占据小环的大部分的离子注入元件和由软磁材料制成的其它元件组成。具有较高密度的离子注入次环被折叠多次，并且包括彼此相邻并通过内部转弯连接的直线传播轨迹，而具有面向内侧转弯的外侧转弯的另一条直线传播轨道被放置在相邻直线轨道

10. 发明授权

US4460412A Method of making magnetic bubble memory device by implanting hydrogen ions and annealing 失效
标题翻译：通过注入氢离子和退火制造磁性气泡存储器件的方法
公开(公告)号：US4460412A
公开(公告)日：1984-07-17
申请号：US367675
申请日：1982-04-12
申请人： Ryo Imura , Tadashi Ikeda , Ryo Suzuki , Nagatugu Koiso , Teruaki Takeuchi , Hiroshi Umezaki , Yutaka Sugita
发明人： Ryo Imura , Tadashi Ikeda , Ryo Suzuki , Nagatugu Koiso , Teruaki Takeuchi , Hiroshi Umezaki , Yutaka Sugita
IPC分类号： G11C11/14 , H01F10/24 , H01F41/14 , H01F41/32 , H01F41/34 , H01L21/265 , C04B35/00 , G11C19/08
CPC分类号： H01F10/24 , H01F41/14 , H01F41/32 , H01F41/34
摘要： A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetic garnet film through the covering film. According to this method, it is possible to form an ion-implanted layer in which the ion concentration distribution in the direction of depth is uniform, and moreover the inplane anisotropy field in the ion-implanted layer decreases only a little with time in an annealing process.
摘要翻译：公开了一种用离子注入磁性石榴石膜的方法，其中在用于磁性气泡的单晶磁性石榴石膜上提供覆盖膜，并且通过覆盖物将氢离子注入到磁性石榴石膜的表面区域的期望部分中电影。根据该方法，可以形成离子注入层，其中在深度方向上的离子浓度分布是均匀的，此外，离子注入层中的面内各向异性场在退火中仅随时间降低一点处理。

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