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    • 6. 发明授权
    • Avalanche photodiode
    • 雪崩光电二极管
    • US09006854B2
    • 2015-04-14
    • US13819559
    • 2011-09-01
    • Tadao IshibashiSeigo AndoMasahiro NadaYoshifumi MuramotoHaruki Yokoyama
    • Tadao IshibashiSeigo AndoMasahiro NadaYoshifumi MuramotoHaruki Yokoyama
    • H01L31/107H01L31/02H01L31/0224
    • H01L31/02002H01L31/022416H01L31/03046H01L31/035281H01L31/1075Y02E10/544
    • An APD is provided with the semi-insulating substrate, a first mesa having a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate, a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side, and a depletion control region that is provided in layers on the second mesa side relative to the p-type electric field control layer, formed in an encircling portion provided inside an outer circumference of the first mesa and encircling an outer circumference of the second mesa, and prevents the encircling portion of the p-type electric field control layer from being depleted when bias is applied.
    • APD设置有半绝缘基板,第一台面具有第一层叠结构,其中p型电极层,p型光吸收层,具有低杂质浓度的光吸收层,带隙倾斜 层叠,p型电场控制层,雪崩乘法器层,n型电场控制层和具有低杂质浓度的电子传输层依次层叠在半绝缘基板的表面上, 第二台面,其具有从层叠方向观察时设置在第一台面的外周的外周,并且具有第二层叠结构,其中n型电极缓冲层和n型电极层依次层叠在 电子转移层侧的表面和相对于p型电场控制层设置在第二台面侧的层的耗尽控制区域,形成在环状端口 n设置在第一台面的外周内并且围绕第二台面的外周,并且在施加偏压时防止p型电场控制层的环绕部分耗尽。
    • 8. 发明申请
    • AVALANCHE PHOTODIODE
    • AVALANCHE光电
    • US20130154045A1
    • 2013-06-20
    • US13819279
    • 2011-09-01
    • Tadao IshibashiSeigo AndoMasahiro NadaYoshifumi MuramotoHaruki Yokoyama
    • Tadao IshibashiSeigo AndoMasahiro NadaYoshifumi MuramotoHaruki Yokoyama
    • H01L31/0352
    • H01L31/035281H01L31/03046H01L31/1075Y02E10/544
    • An APD is provided with a semi-insulating substrate, a first mesa having a first laminate constitution in which a p-type electrode layer, a p-type light absorbing layer, a light absorbing layer with a low impurity concentration, a band gap inclined layer, a p-type electric field control layer, an avalanche multiplier layer, an n-type electric field control layer, and an electron transit layer with a low impurity concentration are stacked in this order on a surface of the semi-insulating substrate, a second mesa having an outer circumference provided inside an outer circumference of the first mesa as viewed from the laminating direction and having a second laminate constitution in which an n-type electrode buffer layer and an n-type electrode layer are stacked in this order on a surface on the electron transit layer side of the first mesa, and in the APD, a total donor concentration of the n-type electric field control layer is lower than a total acceptor concentration of the p-type electric field control layer in a range of 2×1011 to 1×1012/cm2.
    • APD设置有半绝缘基板,第一台面具有第一层叠结构,其中p型电极层,p型光吸收层,具有低杂质浓度的光吸收层,带隙倾斜 层叠,p型电场控制层,雪崩乘法器层,n型电场控制层和具有低杂质浓度的电子传输层依次层叠在半绝缘基板的表面上, 第二台面,其具有从层叠方向观察时设置在第一台面的外周的外周,并且具有第二层叠结构,其中n型电极缓冲层和n型电极层依次层叠在 在第一台面的电子转移层侧的表面,并且在APD中,n型电场控制层的总施主浓度低于p型电子的总受主浓度 在2×1011到1×1012 / cm2的范围内的场域控制层。
    • 9. 发明授权
    • Semiconductor optical modulator
    • 半导体光调制器
    • US08031984B2
    • 2011-10-04
    • US12445616
    • 2007-10-24
    • Tadao IshibashiNobuhiro KikuchiKen Tsuzuki
    • Tadao IshibashiNobuhiro KikuchiKen Tsuzuki
    • G02F1/025
    • G02F1/017B82Y20/00G02F1/025G02F2202/101
    • The present invention can provide an npin-type optical modulator that has a high withstand voltage and is easily fabricated. A semiconductor optical amplifier (10) according to an embodiment of the present invention is an npin-type semiconductor optical modulator in which layers are sequentially stacked, with a cathode layer (12-1) arranged on the substrate side, including at least a first n-type cladding layer (13-1), a p-type cladding layer (14), a core layer (17) and a second n-type cladding layer (13-2). In this semiconductor optical modulator, the p-type cladding layer (14) is electrically connected to an electrode (18-1) of the cathode layer. Accordingly, the accumulation of holes in the p-type cladding layer associated with light absorption in the npin-type optical modulator can be absorbed in the electrode on the negative side. This npin-type semiconductor optical modulator can be comparatively easily fabricated using conventional semiconductor manufacturing techniques by adopting a mesa type waveguide structure.
    • 本发明可以提供一种耐压高且易于制造的npin型光调制器。 根据本发明的实施例的半导体光放大器(10)是其中依次堆叠层的衬底型半导体光调制器,其中布置在衬底侧上的阴极层(12-1)包括至少第一 n型包覆层(13-1),p型包覆层(14),芯层(17)和第二n型包覆层(13-2)。 在该半导体光调制器中,p型覆层(14)与阴极层的电极(18-1)电连接。 因此,能够在负极侧的电极中吸收与npin型光调制器中的光吸收有关的p型覆层的空穴积聚。 通过采用台面型波导结构,可以使用常规的半导体制造技术相对容易地制造该npin型半导体光调制器。