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1. 发明授权

US07595087B2 Process of forming platinum coating catalyst layer in moisture-generating reactor 失效
标题翻译：在产水反应堆中形成铂涂层催化剂层的工艺
公开(公告)号：US07595087B2
公开(公告)日：2009-09-29
申请号：US10510758
申请日：2003-10-14
申请人： Tadahiro Ohmi , Nobukazu Ikeda , Akihiro Morimoto , Masafumi Kitano , Yukio Minami , Koji Kawada
发明人： Tadahiro Ohmi , Nobukazu Ikeda , Akihiro Morimoto , Masafumi Kitano , Yukio Minami , Koji Kawada
IPC分类号： G21C9/00
CPC分类号： B01J12/007 , B01J21/04 , B01J23/42 , B01J37/0225 , B01J37/0226 , B01J37/08 , C01B5/00
摘要： A barrier film which has uniform thickness and excellent adhesiveness to the base material and superbly functions to protect a platinum film can be formed on the inner wall surface of a moisture-generating reactor at ease and at a low cost. The moisture-generating reactor in which hydrogen and oxygen are reacted to generate moisture without high temperature combustion is made of an alloy containing aluminum. A principally aluminum oxide (Al2O3)-composed barrier film is formed by applying an aluminum selective oxidation treatment on the inner wall surface of the moisture-generating reactor, and thereafter a platinum film is stacked on and stuck to the barrier film so that a platinum coating catalyst layer is formed.
摘要翻译：能够容易地且成本低廉地在发湿反应堆的内壁面上形成具有均匀厚度和对基材的粘合性优异的保护铂膜的保护膜的阻挡膜。其中氢和氧反应产生水分而不进行高温燃烧的发湿反应器由含铝的合金制成。通过在产生水分的反应器的内壁表面上进行铝选择性氧化处理，形成主要为氧化铝（Al 2 O 3）的阻挡膜，然后将铂膜层叠并粘贴在阻挡膜上，使铂形成涂层催化剂层。

2. 发明申请

US20050157834A1 Method for forming platinum coating catalyst layer in reaction furnace ofr generating water gas 失效
标题翻译：在产生水煤气的反应炉中形成铂涂层催化剂层的方法
公开(公告)号：US20050157834A1
公开(公告)日：2005-07-21
申请号：US10510758
申请日：2003-10-14
申请人： Tadahiro Ohmi , Nobukazu Ikeda , Akihiro Morimoto , Masafumi Kitano , Yukio Minami , Koji Kawada
发明人： Tadahiro Ohmi , Nobukazu Ikeda , Akihiro Morimoto , Masafumi Kitano , Yukio Minami , Koji Kawada
IPC分类号： B01J21/04 , B01J23/42 , B01J32/00 , B01J37/02 , B01J37/08 , B01J37/10 , C01B5/00 , G21C9/00
CPC分类号： B01J12/007 , B01J21/04 , B01J23/42 , B01J37/0225 , B01J37/0226 , B01J37/08 , C01B5/00
摘要： A barrier film which has uniform thickness and excellent adhesiveness to the base material and superbly functions to protect a platinum film can be formed on the inner wall surface of a moisture-generating reactor at ease and at a low cost. The moisture-generating reactor in which hydrogen and oxygen are reacted to generate moisture without high temperature combustion is made of an alloy containing aluminum. A principally aluminum oxide (Al2O3)-composed barrier film is formed by applying an aluminum selective oxidation treatment on the inner wall surface of the moisture-generating reactor, and thereafter a platinum film is stacked on and stuck to the barrier film so that a platinum coating catalyst layer is formed.
摘要翻译：能够容易地且成本低廉地在发湿反应堆的内壁面上形成具有均匀厚度和对基材的粘合性优异的保护铂膜的保护膜的阻挡膜。其中氢和氧反应产生水分而不进行高温燃烧的发湿反应器由含铝的合金制成。主要由氧化铝（Al 2 O 3 O 3）组成的阻挡膜是通过在产生水分的反应器的内壁表面上进行铝选择性氧化处理而形成的，然后将铂膜层叠并粘贴到阻挡膜上，从而形成铂涂层催化剂层。

3. 发明授权

US07673649B2 Vacuum thermal insulating valve 失效
标题翻译：真空保温阀
公开(公告)号：US07673649B2
公开(公告)日：2010-03-09
申请号：US10597303
申请日：2005-01-13
申请人： Tadahiro Ohmi , Yukio Minami , Kenji Tubota , Tsutomu Shinohara , Michio Yamaji , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada , Toshio Nariai
发明人： Tadahiro Ohmi , Yukio Minami , Kenji Tubota , Tsutomu Shinohara , Michio Yamaji , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada , Toshio Nariai
IPC分类号： B65D81/20
CPC分类号： F16K51/02 , Y10T137/6606 , Y10T137/7043 , Y10T137/7062
摘要： The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S5 having a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S4, which is hermetically fitted to the lower vacuum jacket S5 and with its lower face made open.
摘要翻译：本发明提供一种真空绝热阀，其可以在气体供给系统或排气系统中在高温下使用，并且由于其绝热性能优异，也可以制成大小小型的真空绝热阀。使用包括阀体和致动器的阀的真空隔热阀和容纳阀的真空保温箱，上述真空保温箱S由方形的下部真空夹套S5形成，圆筒形真空绝热管接收部分J的侧面并且其上表面打开，方形的上部真空夹套S4气密地装配到下部真空套筒S5上并且其下表面打开。

4. 发明授权

US07103990B2 Rotary silicon wafer cleaning apparatus 有权
标题翻译：旋转硅片清洗装置
公开(公告)号：US07103990B2
公开(公告)日：2006-09-12
申请号：US10498800
申请日：2003-09-11
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
IPC分类号： F26B5/08
CPC分类号： H01L21/67034 , H01L21/02052
摘要： It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments.According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.
摘要翻译：本发明的目的是提供一种旋转型硅晶片清洁装置，以在化学和纯净水清洗处理完成之后通过在硅晶片上提供更好的氢终止来进一步提高硅晶片的稳定性。根据本发明，旋转型硅晶片清洗装置在壳体内部具有硅晶片支撑/旋转驱动机构，用于在后期化学清洗时用纯水清洗硅晶片，在外表面上进行干燥和氢终止处理通过安装硅晶片干燥装置来执行硅晶片，所述硅晶片干燥装置包括附接到壳体的气体供应板，以供应氢气和含有大于0.05％的氢气的惰性气体的混合气体，混合气体供应一端连接上述气体供给面板的气体混合器的管道，将上述气体供给管内的混合气体加热的混合气体加热装置以及配备有铂镀膜的氢自由基形成装置，在与上述混合气体加热装置加热的高温气体接触的气体接触部分处形成氢自由基，从而喷出混合气体在完成清洁之后，将上述自由基形成装置形成的氢基团固定在旋转的硅晶片上。

5. 发明授权

US06733732B2 Reactor for generating moisture 有权
标题翻译：反应器产生水分
公开(公告)号：US06733732B2
公开(公告)日：2004-05-11
申请号：US09783287
申请日：2001-02-15
申请人： Tadahiro Ohmi , Koji Kawada , Yoshikazu Tanabe , Takahisa Nitta , Nobukazu Ikeda , Akihiro Morimoto , Keiji Hirao , Hiroshi Morokoshi , Yukio Minami
发明人： Tadahiro Ohmi , Koji Kawada , Yoshikazu Tanabe , Takahisa Nitta , Nobukazu Ikeda , Akihiro Morimoto , Keiji Hirao , Hiroshi Morokoshi , Yukio Minami
IPC分类号： B01J802
CPC分类号： C01B5/00
摘要： A reactor comprising a body made of a heat-resistant material and having an inlet and an outlet for water/moisture gas, having a gas-diffusing member provided in an internal space of the body, and having a platinum coating on an internal wall surface of the body. Hydrogen and oxygen fed from the inlet are diffused by the gas-diffusing member and then come into contact with the platinum coating to enhance reactivity, thereby producing water. A temperature of the reactor is held to be below an ignition temperature of hydrogen or a hydrogen-containing gas. The platinum-coated catalyst layer on the internal wall of the reactor body is formed by treating the surface of the internal wall of the body, cleaning the treated surface, forming a barrier coating of a nonmetallic material of an oxide or nitride on the wall surface, and forming the platinum coating on the barrier coating.
摘要翻译：一种反应器，包括由耐热材料制成并具有用于水/湿气的入口和出口的本体，其具有设置在所述主体的内部空间中的气体扩散构件，并且在内壁表面上具有铂涂层的身体。从入口供给的氢气和氧气被气体扩散构件扩散，然后与铂涂层接触以提高反应性，从而产生水。反应器的温度保持在低于氢气或含氢气体的点火温度。反应器主体内壁上的铂涂层催化剂层是通过处理体内表面，清洁处理过的表面，在壁表面上形成氧化物或氮化物的非金属材料的阻挡涂层形成的，并在阻挡涂层上形成铂涂层。

6. 发明授权

US06180067B2 Reactor for the generation of water 失效
标题翻译：反应堆生成水
公开(公告)号：US06180067B2
公开(公告)日：2001-01-30
申请号：US09160188
申请日：1998-09-25
申请人： Tadahiro Ohmi , Koji Kawada , Yoshikazu Tanabe , Nobukazu Ikeda , Akihiro Morimoto , Yukio Minami
发明人： Tadahiro Ohmi , Koji Kawada , Yoshikazu Tanabe , Nobukazu Ikeda , Akihiro Morimoto , Yukio Minami
IPC分类号： B01J1500
CPC分类号： B01J12/007 , C01B5/00
摘要： An improved reactor for generating water from hydrogen and oxygen which allows production of moisture at a high conversion rate exceeding 99 percent with the temperature kept under some 400° C. inside the reactor shell (1) and with the water vapor production being more than 1,000 sccm. One form of the reactor (FIG. 1) according to the invention is constructed with a closed cylinder divided into two compartments by an interior partition, a first reactor structural component (2) and a second reactor structural component (3), united to define a sealed interior space (1a). The sealed interior space (1a) of the reactor shell (1) is partitioned by a diffusion filter (10) into a first chamber (1b) provided with an inlet reflector unit (9) and a second chamber (1c) provided with an outlet reflector-diffuser unit (11). On the inside surface of the second reactor structural component (1c) is formed a platinum coated catalyst layer (13). The inlet reflector unit (9) comprises a cylindrical casing (9a) mounted over a starting material gas feed port (2c) on the inside surface of the first reactor structural component (2), side openings (9c) formed in the casing (9a) and a reflector (9b) closing the open end of the casing (9a). The outlet reflector-diffuser unit (11) has a cylindrical casing (11a) fixed over a water vapor gas outlet port (3c) on the inside surface of the second reactor structural component (3), side openings (11e) formed in the casing, a reflector (11b) closing the open end of the casing (11a), an outlet diffusion filter (11c) provided inside the casing (11a) and a platinum coated catalyst layer (11d) formed on the outlet diffusion filter (11c).
摘要翻译：一种用于从氢气和氧气产生水的改进的反应器，其允许在反应器壳（1）内保持在约400℃的温度下以高转化率生产超过99％的水分，并且水蒸汽产生量大于1,000 sccm。根据本发明的反应器（图1）的一种形式被构造成具有通过内部分隔件分成两个隔间的封闭圆筒，第一反应器结构部件（2）和第二反应器结构部件（3），所述第一反应器结构部件（2）和第二反应器结构部件密封的内部空间（1a）。反应器壳体（1）的密封内部空间（1a）被扩散过滤器（10）分隔成具有入口反射器单元（9）的第一室（1b）和设置有出口反射器 - 扩散器单元（11）。在第二反应器结构部件（1c）的内表面上形成有镀铂催化剂层（13）。入口反射器单元（9）包括安装在第一反应器结构部件（2）的内表面上的原料气体供给口（2c）上的圆柱形壳体（9a），形成在壳体（9a）中的侧开口（9c））和闭合壳体（9a）的开口端的反射器（9b）。出口反射器 - 扩散器单元（11）具有固定在第二反应器结构部件（3）的内表面上的水蒸汽气体出口（3c）上的圆筒形壳体（11a），形成在壳体中的侧开口（11e），封闭壳体（11a）的开口端的反射器（11b），设置在壳体（11a）内部的出口扩散过滤器（11c）和形成在出口扩散过滤器（11c）上的镀铂催化剂层（11d）意大利

7. 发明授权

US5816285A Pressure type flow rate control apparatus 失效
标题翻译：压力式流量控制装置
公开(公告)号：US5816285A
公开(公告)日：1998-10-06
申请号：US907951
申请日：1997-08-11
申请人： Tadahiro Ohmi , Koji Nishino , Nobukazu Ikeda , Akihiro Morimoto , Yukio Minami , Koji Kawada , Ryosuke Dohi , Hiroyuki Fukuda
发明人： Tadahiro Ohmi , Koji Nishino , Nobukazu Ikeda , Akihiro Morimoto , Yukio Minami , Koji Kawada , Ryosuke Dohi , Hiroyuki Fukuda
IPC分类号： G05D7/06 , G05D16/20 , F16K31/12
CPC分类号： G05D7/0635 , Y10T137/7759 , Y10T137/7761
摘要： A pressure type flow rate control apparatus (1) controls flow rate of a fluid in an environment where a ratio of P2/P1 between an absolute pressure P1 at an upstream side of an orifice and an absolute pressure P2 at a downstream side of the orifice is maintained at a value less than about 0.7. The apparatus comprises: a plate for forming the orifice (5); a control valve (2) positioned upstream of the orifice; an orifice corresponding valve (9) positioned downstream of the orifice (5); a primary pressure detector (3) positioned between the control valve (2) and the orifice (5); a secondary pressure detector (11) positioned downstream of the orifice (5); a calculation control device (6) for calculating flow rate Qc on the basis of the measured pressure P1 of the primary pressure detector (3) by a formula Qc=KP1 (K being a constant) and for outputting as a control signal Qy a difference between a flow rate command signal Qs and the calculated flow rate signal Qc to a drive unit (14) of the control valve 2; and a pressure comparing, calculating apparatus (10) for calculating the ratio of P2/P1 between the detected pressure P1 of the primary pressure detector (3) and the detected pressure P2 of the secondary pressure detector (11). The pressure P1 upstream of the orifice is adjusted by opening and closing the control valve by the control signal Qy, thereby controlling the flow rate downstream of the orifice.
摘要翻译：压力式流量控制装置（1）控制在孔口上游侧的绝对压力P1和孔口下游侧的绝对压力P2之间的P2 / P1的比例的环境中的流体流量保持在小于约0.7的值。该装置包括：用于形成孔口（5）的板; 位于孔口上游的控制阀（2）; 位于孔口（5）下游的孔对应阀（9）; 位于控制阀（2）和孔（5）之间的主要压力检测器（3）; 位于孔口（5）下游的二次压力检测器（11）; 计算控制装置（6），用于通过公式Qc = KP1（K为常数）计算基于所测量的主压力检测器（3）的压力P1的流量Qc，并且作为控制信号Qy输出差在流量指令信号Qs和计算出的流量信号Qc之间，与控制阀2的驱动单元（14）之间; 以及压力比较计算装置（10），用于计算一次压力检测器（3）的检测压力P1与二次压力检测器（11）的检测压力P2之间的P2 / P1的比。通过控制信号Qy打开和关闭控制阀来调节孔口上游的压力P1，从而控制孔口下游的流速。

8. 发明申请

US20090032115A1 VACUUM THERMAL INSULATING VALVE 失效
标题翻译：真空绝热阀
公开(公告)号：US20090032115A1
公开(公告)日：2009-02-05
申请号：US10597303
申请日：2005-01-13
申请人： Tadahiro Ohmi , Yukio Minami , Kenji Tubota , Tsutomu Shinohara , Michio Yamaji , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada , Toshio Nariai
发明人： Tadahiro Ohmi , Yukio Minami , Kenji Tubota , Tsutomu Shinohara , Michio Yamaji , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada , Toshio Nariai
IPC分类号： F16K51/02 , F16K27/00
CPC分类号： F16K51/02 , Y10T137/6606 , Y10T137/7043 , Y10T137/7062
摘要： The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S5 having a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S4, which is hermetically fitted to the lower vacuum jacket S5 and with its lower face made open.
摘要翻译：本发明提供一种真空绝热阀，其可以在气体供给系统或排气系统中在高温下使用，并且由于其绝热性能优异，也可以制成大小小型的真空绝热阀。使用包括阀体和致动器的阀的真空隔热阀和容纳阀的真空保温箱，上述真空保温箱S由方形的下部真空夹套S5形成，圆筒形真空绝热管接收部分J的侧面并且其上表面打开，方形的上部真空夹套S4气密地装配到下部真空套筒S5上并且其下表面打开。

9. 发明申请

US20050126030A1 Rotary silicon wafer cleaning apparatus 有权
标题翻译：旋转硅片清洗装置
公开(公告)号：US20050126030A1
公开(公告)日：2005-06-16
申请号：US10498800
申请日：2003-09-11
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Takumi Fujita , Yukio Minami , Nobukazu Ikeda , Akihiro Morimoto , Koji Kawada
IPC分类号： H01L21/304 , F26B17/24 , F26B17/30 , H01L20060101 , H01L21/00 , H01L21/02 , H01L21/30 , H01L21/302
CPC分类号： H01L21/67034 , H01L21/02052
摘要： It is an object of the present invention to provide a rotation type silicon wafer cleaning device to further raise the stability of a silicon wafer by providing a better hydrogen termination on the silicon wafer after completion of chemical and pure water cleaning treatments. According to the present invention, a rotation type silicon wafer cleaning device has a silicon wafer support/rotation driving mechanism inside the case body for cleaning the silicon wafer at the post chemical cleaning with pure water, drying and hydrogen termination treatments on the outer surface of a silicon wafer is performed by means of installing a silicon wafer drying device comprising a gas supply panel attached to a case body to supply a mixed gas of the hydrogen gas and inactive gas containing a hydrogen gas of more than 0.05%, a mixed gas supply pipe coupled to a gas mixer of the afore-mentioned gas supply panel at one end, a mixed gas heating device to heat the mixed gas in the afore-mentioned gas supply pipe, and a hydrogen radical formation apparatus equipped with a platinum coating film to form hydrogen radical at the gas contacting part where to a high temperature gas heated with the afore-mentioned mixed gas heating device touches, thus to gush out the mixed gas containing hydrogen radical formed with the afore-mentioned radical formation apparatus onto the rotating silicon wafer after cleaning is completed.
摘要翻译：本发明的目的是提供一种旋转型硅晶片清洁装置，以在化学和纯净水清洗处理完成之后通过在硅晶片上提供更好的氢终止来进一步提高硅晶片的稳定性。根据本发明，旋转型硅晶片清洗装置在壳体内部具有硅晶片支撑/旋转驱动机构，用于在后期化学清洗时用纯水清洗硅晶片，在外表面上进行干燥和氢终止处理通过安装硅晶片干燥装置来执行硅晶片，所述硅晶片干燥装置包括附接到壳体的气体供应板，以供应氢气和含有大于0.05％的氢气的惰性气体的混合气体，混合气体供应一端连接上述气体供给面板的气体混合器的管道，将上述气体供给管内的混合气体加热的混合气体加热装置以及配备有铂镀膜的氢自由基形成装置，在与上述混合气体加热装置加热的高温气体接触的气体接触部分处形成氢自由基，从而喷出混合气体在完成清洁之后，将上述自由基形成装置形成的氢基团固定在旋转的硅晶片上。

10. 发明授权

US6093662A Method for generating water for semiconductor production 失效
标题翻译：生产半导体水的方法
公开(公告)号：US6093662A
公开(公告)日：2000-07-25
申请号：US242137
申请日：1999-04-14
申请人： Tadahiro Ohmi , Yukio Minami , Koji Kawada , Yoshikazu Tanabe , Nobukazu Ikeda , Akihiro Morimoto
发明人： Tadahiro Ohmi , Yukio Minami , Koji Kawada , Yoshikazu Tanabe , Nobukazu Ikeda , Akihiro Morimoto
IPC分类号： C01B5/00 , H01L21/31 , H01L21/469
CPC分类号： C01B5/00
摘要： Process for generating moisture for use in semiconductor manufacturing, the process comprising feeding hydrogen and oxygen into a reactor provided with a platinum-coated catalyst layer on an interior wall, thus enhancing the reactivity between hydrogen and oxygen by catalytic action and instantaneously reacting the reactivity-enhanced hydrogen and oxygen at a temperature below the ignition point to produce moisture without undergoing combustion at a high temperature, wherein the amount of unreacted hydrogen occurring in the generated moisture in starting up or terminating the moisture generating reaction is minimized and wherein undesired reactions such as undesired silicon oxide film coating are avoided. When the generation of moisture is started up by feeding hydrogen and oxygen into the reactor provided with a platinum-coated catalyst layer on the inside wall thereof, oxygen first starts to be fed and, some time after that, the supply of hydrogen is begun. In terminating the moisture generating operation by cutting off the supply of hydrogen and oxygen into the reactor, the feeding of hydrogen is first stopped and, some time after that, the supply of oxygen is shut off.
摘要翻译： PCT No.PCT / JP98 / 02660 Sec。 371 1999年4月14日第 102（e）1999年4月14日PCT PCT。1998年6月12日PCT公布。第WO98 / 57884号公报日期1998年12月23日用于生产用于半导体制造的水分的方法，该方法包括将氢和氧进料到在内壁上设置有铂包覆催化剂层的反应器中，从而通过催化作用增强氢和氧之间的反应性，在低于点火点的温度下使反应性增强的氢和氧瞬时反应以产生水分而不在高温下经历燃烧，其中在产生水分的反应中启动或终止产生的水分中产生的未反应的氢的量最小化，其中避免了不期望的反应，例如不需要的氧化硅膜涂层。当通过在其内壁上提供有铂包覆的催化剂层的反应器中加入氢气和氧气来启动水分的产生时，首先开始供给氧，一段时间后开始供应氢气。在通过切断氢气和氧气进入反应器来终止湿气生成操作时，首先停止供给氢气，一段时间后，关闭氧气供应。

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