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1. 发明授权

US07651568B2 Plasma enhanced atomic layer deposition system 有权
标题翻译：等离子体增强原子层沉积系统
公开(公告)号：US07651568B2
公开(公告)日：2010-01-26
申请号：US11090256
申请日：2005-03-28
申请人： Tadahiro Ishizaka , Tsukasa Matsuda , Frank M. Cerio, Jr. , Kaoru Yamamoto
发明人： Tadahiro Ishizaka , Tsukasa Matsuda , Frank M. Cerio, Jr. , Kaoru Yamamoto
IPC分类号： C23C16/505 , C23C16/503 , H01L21/306
CPC分类号： C23C16/4409 , C23C16/4404 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/5096
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by alternatingly introducing the first process material and the second process material.
摘要翻译：等离子体增强原子层沉积（PEALD）系统包括耦合到第二室部件的第一室部件，以提供限定处理室内的隔离处理空间的处理室。衬底保持器设置在处理室内并被配置为支撑衬底，第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到处理室。电源被配置为将电磁功率耦合到处理室，以及插入在第一和第二室部件之间的密封组件。密封组件包括多个密封构件，其被配置为将渗透通过第一和第二组件的界面的外部污染物的量减少到处理室的隔离处理空间中，其中通过交替地引入第一工艺材料和第二工艺材料。

2. 发明申请

US20060213438A1 Plasma enhanced atomic layer deposition system 有权
标题翻译：等离子体增强原子层沉积系统
公开(公告)号：US20060213438A1
公开(公告)日：2006-09-28
申请号：US11090256
申请日：2005-03-28
申请人： Tadahiro Ishizaka , Tsukasa Matsuda , Frank Cerio , Kaoru Yamamoto
发明人： Tadahiro Ishizaka , Tsukasa Matsuda , Frank Cerio , Kaoru Yamamoto
IPC分类号： C23C16/00
CPC分类号： C23C16/4409 , C23C16/4404 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/5096
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by alternatingly introducing the first process material and the second process material.
摘要翻译：等离子体增强原子层沉积（PEALD）系统包括耦合到第二室部件的第一室部件，以提供限定处理室内的隔离处理空间的处理室。衬底保持器设置在处理室内并被配置为支撑衬底，第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到处理室。电源被配置为将电磁功率耦合到处理室，以及插入在第一和第二室部件之间的密封组件。密封组件包括多个密封构件，其被配置为将渗透通过第一和第二组件的界面的外部污染物的量减少到处理室的隔离处理空间中，其中通过交替地引入第一工艺材料和第二工艺材料。

3. 发明授权

US08242019B2 Selective deposition of metal-containing cap layers for semiconductor devices 有权
标题翻译：用于半导体器件的含金属盖层的选择性沉积
公开(公告)号：US08242019B2
公开(公告)日：2012-08-14
申请号：US12414917
申请日：2009-03-31
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Satohiko Hoshino , Hiroyuki Nagai , Yuki Chiba , Frank M. Cerio, Jr.
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Satohiko Hoshino , Hiroyuki Nagai , Yuki Chiba , Frank M. Cerio, Jr.
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/302
CPC分类号： H01L21/76849 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76846 , H01L21/76856 , H01L21/76859 , H01L21/76883
摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing metal surfaces and dielectric layer surfaces, and modifying the dielectric layer surfaces by exposure to a reactant gas containing a hydrophobic functional group, where the modifying substitutes a hydrophilic functional group in the dielectric layer surfaces with a hydrophobic functional group. The method further includes depositing metal-containing cap layers selectively on the metal surfaces by exposing the modified dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor.
摘要翻译：一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中的方法。在一个实施例中，该方法包括提供含有金属表面和电介质层表面的图案化衬底，以及通过暴露于含有疏水官能团的反应气体来修饰电介质层表面，其中修饰取代介电层表面中的亲水性官能团具有疏水官能团。该方法还包括通过将改性的介电层表面和金属表面暴露于含有金属的前体蒸气的沉积气体中，将金属含有的盖层选择性地沉积在金属表面上。

4. 发明授权

US07727912B2 Method of light enhanced atomic layer deposition 有权
标题翻译：光增强原子层沉积的方法
公开(公告)号：US07727912B2
公开(公告)日：2010-06-01
申请号：US11378270
申请日：2006-03-20
申请人： Tadahiro Ishizaka , Frank M. Cerio, Jr. , Jacques Faguet
发明人： Tadahiro Ishizaka , Frank M. Cerio, Jr. , Jacques Faguet
IPC分类号： H01L21/469
CPC分类号： H01L21/76843 , C23C16/32 , C23C16/36 , C23C16/45536 , C23C16/482 , H01L21/28562
摘要： A method light enhanced atomic layer deposition for forming a film on a substrate. The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process; and depositing a film on the substrate using the LEALD process, where the depositing includes (a) exposing the substrate to a first process material, (b) exposing the substrate to a second process material containing a reducing agent and irradiating the substrate with a first light radiation having either no or at least partial temporal overlap with the exposing of the substrate to the second process material, (c) repeating steps (a) and (b) until the desired film has been deposited. According to one embodiment of the invention, the deposited film can be a TaCN film or a TaC film.
摘要翻译：一种用于在基板上形成薄膜的光增强原子层沉积。该方法包括将衬底设置在被配置为执行LEALD处理的光增强原子层沉积（LEALD）系统的处理室中; 以及使用LEALD工艺在衬底上沉积膜，其中沉积包括（a）将衬底暴露于第一工艺材料，（b）将衬底暴露于含有还原剂的第二工艺材料上，并用第一具有或不至少部分时间重叠的光辐射与基板暴露于第二工艺材料，（c）重复步骤（a）和（b），直到所需的膜沉积为止。根据本发明的一个实施例，沉积膜可以是TaCN膜或TaC膜。

5. 发明授权

US07799681B2 Method for forming a ruthenium metal cap layer 有权
标题翻译：形成钌金属盖层的方法
公开(公告)号：US07799681B2
公开(公告)日：2010-09-21
申请号：US12173814
申请日：2008-07-15
申请人： Kenji Suzuki , Frank M. Cerio, Jr. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
发明人： Kenji Suzuki , Frank M. Cerio, Jr. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
IPC分类号： H01L21/44
CPC分类号： H01L21/76849 , C23C16/02 , C23C16/16 , H01L21/02068 , H01L21/28562 , H01L21/32134 , H01L21/32135 , H01L21/76826 , H01L21/76828 , H01L21/76834 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L21/76883
摘要： A method for integrating ruthenium (Ru) metal cap layers and modified Ru metal cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration (EM) and stress migration (SM) in bulk Cu metal. In one embodiment, the method includes providing a planarized patterned substrate containing a Cu metal surface and a dielectric layer surface, depositing first Ru metal on the Cu metal surface, and depositing additional Ru metal on the dielectric layer surface, where the amount of the additional Ru metal is less than the amount of the first Ru metal. The method further includes at least substantially removing the additional Ru metal from the dielectric layer surface to improve the selective formation of a Ru metal cap layer on the Cu metal surface. Other embodiments further include incorporating one or more types of modifier elements into the dielectric layer surface, the Cu metal surface, the Ru metal cap layer, or a combination thereof.
摘要翻译：将钌（Ru）金属盖层和改性的Ru金属覆盖层整合到半导体器件的铜（Cu）金属化中以改善块状Cu金属中的电迁移（EM）和应力迁移（SM）的方法。在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的平坦化图案化衬底，在Cu金属表面上沉积第一Ru金属，以及在电介质层表面上沉积额外的Ru金属，其中额外的量 Ru金属少于第一Ru金属的量。该方法还包括从电介质层表面至少基本上去除额外的Ru金属，以改善在Cu金属表面上的Ru金属覆盖层的选择性形成。其他实施例还包括将一种或多种类型的改性剂元素结合到电介质层表面，Cu金属表面，Ru金属覆盖层或其组合中。

6. 发明申请

US20100015798A1 METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER 有权
标题翻译：形成金属金属层的方法
公开(公告)号：US20100015798A1
公开(公告)日：2010-01-21
申请号：US12173814
申请日：2008-07-15
申请人： Kenji Suzuki , Frank M. Cerio, JR. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
发明人： Kenji Suzuki , Frank M. Cerio, JR. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , C23C16/02 , C23C16/16 , H01L21/02068 , H01L21/28562 , H01L21/32134 , H01L21/32135 , H01L21/76826 , H01L21/76828 , H01L21/76834 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L21/76883
摘要： A method for integrating ruthenium (Ru) metal cap layers and modified Ru metal cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration (EM) and stress migration (SM) in bulk Cu metal. In one embodiment, the method includes providing a planarized patterned substrate containing a Cu metal surface and a dielectric layer surface, depositing first Ru metal on the Cu metal surface, and depositing additional Ru metal on the dielectric layer surface, where the amount of the additional Ru metal is less than the amount of the first Ru metal. The method further includes at least substantially removing the additional Ru metal from the dielectric layer surface to improve the selective formation of a Ru metal cap layer on the Cu metal surface. Other embodiments further include incorporating one or more types of modifier elements into the dielectric layer surface, the Cu metal surface, the Ru metal cap layer, or a combination thereof.
摘要翻译：将钌（Ru）金属盖层和改性的Ru金属覆盖层整合到半导体器件的铜（Cu）金属化中以改善块状Cu金属中的电迁移（EM）和应力迁移（SM）的方法。在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的平坦化图案化衬底，在Cu金属表面上沉积第一Ru金属，以及在电介质层表面上沉积额外的Ru金属，其中额外的量 Ru金属少于第一Ru金属的量。该方法还包括从电介质层表面至少基本上去除额外的Ru金属，以改善在Cu金属表面上的Ru金属覆盖层的选择性形成。其他实施例还包括将一种或多种类型的改性剂元素结合到电介质层表面，Cu金属表面，Ru金属覆盖层或其组合中。

7. 发明申请

US20100248473A1 SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCTOR DEVICES 有权
标题翻译：用于半导体器件的金属包层的选择性沉积
公开(公告)号：US20100248473A1
公开(公告)日：2010-09-30
申请号：US12414917
申请日：2009-03-31
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Satohiko Hoshino , Hiroyuki Nagai , Yuki Chiba , Frank M. Cerio, JR.
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Satohiko Hoshino , Hiroyuki Nagai , Yuki Chiba , Frank M. Cerio, JR.
IPC分类号： H01L21/768 , H01L21/3205
CPC分类号： H01L21/76849 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76846 , H01L21/76856 , H01L21/76859 , H01L21/76883
摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing metal surfaces and dielectric layer surfaces, and modifying the dielectric layer surfaces by exposure to a reactant gas containing a hydrophobic functional group, where the modifying substitutes a hydrophilic functional group in the dielectric layer surfaces with a hydrophobic functional group. The method further includes depositing metal-containing cap layers selectively on the metal surfaces by exposing the modified dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor.
摘要翻译：一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中的方法。在一个实施例中，该方法包括提供含有金属表面和电介质层表面的图案化衬底，以及通过暴露于含有疏水官能团的反应气体来修饰电介质层表面，其中修饰取代介电层表面中的亲水性官能团具有疏水官能团。该方法还包括通过将改性的介电层表面和金属表面暴露于含有金属的前体蒸气的沉积气体中，将金属含有的盖层选择性地沉积在金属表面上。

8. 发明申请

US20100081274A1 METHOD FOR FORMING RUTHENIUM METAL CAP LAYERS 审中-公开
标题翻译：形成金属箔层的方法
公开(公告)号：US20100081274A1
公开(公告)日：2010-04-01
申请号：US12240894
申请日：2008-09-29
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Frank M. Cerio, JR.
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Frank M. Cerio, JR.
IPC分类号： H01L21/4763
CPC分类号： H01L21/76814 , C23C16/0236 , C23C16/16 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/76826 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76864
摘要： A method is provided for integrating ruthenium (Ru) metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. Embodiments of the invention include treating patterned substrates containing metal layers and low-k dielectric materials with NHx (x≦3) radicals and H radicals to improve selective formation of ruthenium (Ru) metal cap layers on the metal layers relative to the low-k dielectric materials.
摘要翻译：提供了一种用于将钌（Ru）金属沉积物集成到半导体器件的制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。本发明的实施方案包括处理包含金属层和低k电介质材料的图案化衬底，其具有NH x（x和n L e 3）基团和H基团以改善相对于低k的金属层上钌（Ru）金属帽层的选择性形成介电材料。

9. 发明申请

US20070218683A1 Method of integrating PEALD Ta- containing films into Cu metallization 有权
标题翻译：将含有PEALD的含Ta膜的Cu合金化的方法
公开(公告)号：US20070218683A1
公开(公告)日：2007-09-20
申请号：US11378263
申请日：2006-03-20
申请人： Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
IPC分类号： C23C16/00 , H05H1/00
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译：用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

10. 发明授权

US07959985B2 Method of integrating PEALD Ta-containing films into Cu metallization 有权
标题翻译：将含有PEALD的含Ta的膜整合到Cu金属化中的方法
公开(公告)号：US07959985B2
公开(公告)日：2011-06-14
申请号：US11378263
申请日：2006-03-20
申请人： Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
IPC分类号： C23C16/00 , H05H1/00
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译：用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

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