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1. 发明授权

US07718527B2 Method for forming cobalt tungsten cap layers 有权
标题翻译：形成钴钨帽层的方法
公开(公告)号：US07718527B2
公开(公告)日：2010-05-18
申请号：US12242914
申请日：2008-10-01
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76856 , H01L21/02063 , H01L21/02074 , H01L21/76814 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method is provided for integrating cobalt tungsten cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt tungsten cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k regions, and forming a cobalt tungsten cap layer on the Cu paths.
摘要翻译：提供了一种用于将钴钨帽层集成到半导体器件制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化基底和位于特征底部的第一金属化层，在第一金属化层上形成钴钨帽层，在凹陷特征中沉积阻挡层包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。另一实施例包括提供具有Cu路径和低k区域的基本上平坦的表面的图案化衬底，以及在Cu路径上形成钴钨帽层。

2. 发明申请

US20100081276A1 METHOD FOR FORMING COBALT TUNGSTEN CAP LAYERS 有权
标题翻译：形成钴铁矿石层的方法
公开(公告)号：US20100081276A1
公开(公告)日：2010-04-01
申请号：US12242914
申请日：2008-10-01
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
IPC分类号： H01L21/768
CPC分类号： H01L21/76856 , H01L21/02063 , H01L21/02074 , H01L21/76814 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method is provided for integrating cobalt tungsten cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt tungsten cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k regions, and forming a cobalt tungsten cap layer on the Cu paths.
摘要翻译：提供了一种用于将钴钨帽层集成到半导体器件制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化基底和位于特征底部的第一金属化层，在第一金属化层上形成钴钨帽层，在凹陷特征中沉积阻挡层包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。另一实施例包括提供具有Cu路径和低k区域的基本上平坦的表面的图案化衬底，以及在Cu路径上形成钴钨帽层。

3. 发明授权

US07846841B2 Method for forming cobalt nitride cap layers 有权
标题翻译：形成氮化钴盖层的方法
公开(公告)号：US07846841B2
公开(公告)日：2010-12-07
申请号：US12242900
申请日：2008-09-30
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
IPC分类号： H01L21/44
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02074 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method is provided for integrating cobalt nitride cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt nitride cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k dielectric regions, and selectively forming a cobalt nitride cap layer on the Cu paths relative to the low-k dielectric regions.
摘要翻译：提供了一种用于将氮化钴盖层整合到半导体器件的制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化衬底和在特征底部的第一金属化层，在第一金属化层上形成氮化钴覆盖层，在凹陷特征中沉积阻挡层包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。另一个实施例包括提供具有Cu路径和低k电介质区域的基本平坦表面的图案化衬底，以及相对于低k电介质区域在Cu路径上选择性地形成氮化钴覆盖层。

4. 发明授权

US07799681B2 Method for forming a ruthenium metal cap layer 有权
标题翻译：形成钌金属盖层的方法
公开(公告)号：US07799681B2
公开(公告)日：2010-09-21
申请号：US12173814
申请日：2008-07-15
申请人： Kenji Suzuki , Frank M. Cerio, Jr. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
发明人： Kenji Suzuki , Frank M. Cerio, Jr. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
IPC分类号： H01L21/44
CPC分类号： H01L21/76849 , C23C16/02 , C23C16/16 , H01L21/02068 , H01L21/28562 , H01L21/32134 , H01L21/32135 , H01L21/76826 , H01L21/76828 , H01L21/76834 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L21/76883
摘要： A method for integrating ruthenium (Ru) metal cap layers and modified Ru metal cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration (EM) and stress migration (SM) in bulk Cu metal. In one embodiment, the method includes providing a planarized patterned substrate containing a Cu metal surface and a dielectric layer surface, depositing first Ru metal on the Cu metal surface, and depositing additional Ru metal on the dielectric layer surface, where the amount of the additional Ru metal is less than the amount of the first Ru metal. The method further includes at least substantially removing the additional Ru metal from the dielectric layer surface to improve the selective formation of a Ru metal cap layer on the Cu metal surface. Other embodiments further include incorporating one or more types of modifier elements into the dielectric layer surface, the Cu metal surface, the Ru metal cap layer, or a combination thereof.
摘要翻译：将钌（Ru）金属盖层和改性的Ru金属覆盖层整合到半导体器件的铜（Cu）金属化中以改善块状Cu金属中的电迁移（EM）和应力迁移（SM）的方法。在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的平坦化图案化衬底，在Cu金属表面上沉积第一Ru金属，以及在电介质层表面上沉积额外的Ru金属，其中额外的量 Ru金属少于第一Ru金属的量。该方法还包括从电介质层表面至少基本上去除额外的Ru金属，以改善在Cu金属表面上的Ru金属覆盖层的选择性形成。其他实施例还包括将一种或多种类型的改性剂元素结合到电介质层表面，Cu金属表面，Ru金属覆盖层或其组合中。

5. 发明申请

US20100081275A1 METHOD FOR FORMING COBALT NITRIDE CAP LAYERS 有权
标题翻译：形成碳酸盐盖层的方法
公开(公告)号：US20100081275A1
公开(公告)日：2010-04-01
申请号：US12242900
申请日：2008-09-30
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
IPC分类号： H01L21/768
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02074 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method is provided for integrating cobalt nitride cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt nitride cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k dielectric regions, and selectively forming a cobalt nitride cap layer on the Cu paths relative to the low-k dielectric regions.
摘要翻译：提供了一种用于将氮化钴盖层整合到半导体器件的制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化衬底和在特征底部的第一金属化层，在第一金属化层上形成氮化钴覆盖层，在凹陷特征中沉积阻挡层包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。另一个实施例包括提供具有Cu路径和低k电介质区域的基本平坦表面的图案化衬底，以及相对于低k电介质区域在Cu路径上选择性地形成氮化钴覆盖层。

6. 发明申请

US20100015798A1 METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER 有权
标题翻译：形成金属金属层的方法
公开(公告)号：US20100015798A1
公开(公告)日：2010-01-21
申请号：US12173814
申请日：2008-07-15
申请人： Kenji Suzuki , Frank M. Cerio, JR. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
发明人： Kenji Suzuki , Frank M. Cerio, JR. , Miho Jomen , Shigeru Mizuno , Yasushi Mizusawa , Tadahiro Ishizaka
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , C23C16/02 , C23C16/16 , H01L21/02068 , H01L21/28562 , H01L21/32134 , H01L21/32135 , H01L21/76826 , H01L21/76828 , H01L21/76834 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L21/76883
摘要： A method for integrating ruthenium (Ru) metal cap layers and modified Ru metal cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration (EM) and stress migration (SM) in bulk Cu metal. In one embodiment, the method includes providing a planarized patterned substrate containing a Cu metal surface and a dielectric layer surface, depositing first Ru metal on the Cu metal surface, and depositing additional Ru metal on the dielectric layer surface, where the amount of the additional Ru metal is less than the amount of the first Ru metal. The method further includes at least substantially removing the additional Ru metal from the dielectric layer surface to improve the selective formation of a Ru metal cap layer on the Cu metal surface. Other embodiments further include incorporating one or more types of modifier elements into the dielectric layer surface, the Cu metal surface, the Ru metal cap layer, or a combination thereof.
摘要翻译：将钌（Ru）金属盖层和改性的Ru金属覆盖层整合到半导体器件的铜（Cu）金属化中以改善块状Cu金属中的电迁移（EM）和应力迁移（SM）的方法。在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的平坦化图案化衬底，在Cu金属表面上沉积第一Ru金属，以及在电介质层表面上沉积额外的Ru金属，其中额外的量 Ru金属少于第一Ru金属的量。该方法还包括从电介质层表面至少基本上去除额外的Ru金属，以改善在Cu金属表面上的Ru金属覆盖层的选择性形成。其他实施例还包括将一种或多种类型的改性剂元素结合到电介质层表面，Cu金属表面，Ru金属覆盖层或其组合中。

7. 发明授权

US08242019B2 Selective deposition of metal-containing cap layers for semiconductor devices 有权
标题翻译：用于半导体器件的含金属盖层的选择性沉积
公开(公告)号：US08242019B2
公开(公告)日：2012-08-14
申请号：US12414917
申请日：2009-03-31
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Satohiko Hoshino , Hiroyuki Nagai , Yuki Chiba , Frank M. Cerio, Jr.
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Satohiko Hoshino , Hiroyuki Nagai , Yuki Chiba , Frank M. Cerio, Jr.
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/302
CPC分类号： H01L21/76849 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76846 , H01L21/76856 , H01L21/76859 , H01L21/76883
摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing metal surfaces and dielectric layer surfaces, and modifying the dielectric layer surfaces by exposure to a reactant gas containing a hydrophobic functional group, where the modifying substitutes a hydrophilic functional group in the dielectric layer surfaces with a hydrophobic functional group. The method further includes depositing metal-containing cap layers selectively on the metal surfaces by exposing the modified dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor.
摘要翻译：一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中的方法。在一个实施例中，该方法包括提供含有金属表面和电介质层表面的图案化衬底，以及通过暴露于含有疏水官能团的反应气体来修饰电介质层表面，其中修饰取代介电层表面中的亲水性官能团具有疏水官能团。该方法还包括通过将改性的介电层表面和金属表面暴露于含有金属的前体蒸气的沉积气体中，将金属含有的盖层选择性地沉积在金属表面上。

8. 发明授权

US08026168B2 Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming 有权
标题翻译：含有氮化钽碳氮化物阻挡膜的半导体器件及其形成方法
公开(公告)号：US08026168B2
公开(公告)日：2011-09-27
申请号：US11839410
申请日：2007-08-15
申请人： Tadahiro Ishizaka , Shigeru Mizuno
发明人： Tadahiro Ishizaka , Shigeru Mizuno
IPC分类号： H01L21/4763
CPC分类号： H01L23/53238 , C23C16/36 , H01L21/28562 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The method includes providing a substrate containing a dielectric layer having a recessed feature and forming a aluminum tantalum carbonitride barrier film over a surface of the recessed feature. The aluminum tantalum carbonitride barrier film is formed by depositing a plurality of tantalum carbonitride films, and depositing aluminum between each of the plurality of tantalum carbonitride films. One embodiment further comprises depositing a Ru film on the aluminum tantalum carbonitride barrier film, depositing a Cu seed layer on the Ru film, and filling the recessed feature with bulk Cu. A semiconductor device containing an aluminum tantalum carbonitride barrier film is described.
摘要翻译：该方法包括提供含有具有凹陷特征的介电层的基板，并在凹陷特征的表面上形成铝钽碳氮化物阻挡膜。通过沉积多个碳氮化钽膜并在多个碳氮化钽薄膜中的每一个之间沉积铝来形成氮化钽碳氮化物阻挡膜。一个实施例还包括在氮化钽碳氮化物阻挡膜上沉积Ru膜，在Ru膜上沉积Cu籽晶层，并用体积Cu填充凹陷特征。描述了包含氮化钽碳氮化物阻挡膜的半导体器件。

9. 发明申请

US20090045514A1 SEMICONDUCTOR DEVICE CONTAINING AN ALUMINUM TANTALUM CARBONITRIDE BARRIER FILM AND METHOD OF FORMING 有权
标题翻译：含有铝碳纳米管膜的半导体器件及其形成方法
公开(公告)号：US20090045514A1
公开(公告)日：2009-02-19
申请号：US11839410
申请日：2007-08-15
申请人： Tadahiro ISHIZAKA , Shigeru Mizuno
发明人： Tadahiro ISHIZAKA , Shigeru Mizuno
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/53238 , C23C16/36 , H01L21/28562 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The method includes providing a substrate containing a dielectric layer having a recessed feature and forming a aluminum tantalum carbonitride barrier film over a surface of the recessed feature. The aluminum tantalum carbonitride barrier film is formed by depositing a plurality of tantalum carbonitride films, and depositing aluminum between each of the plurality of tantalum carbonitride films. One embodiment further comprises depositing a Ru film on the aluminum tantalum carbonitride barrier film, depositing a Cu seed layer on the Ru film, and filling the recessed feature with bulk Cu. A semiconductor device containing an aluminum tantalum carbonitride barrier film is described.
摘要翻译：该方法包括提供含有具有凹陷特征的介电层的基板，并在凹陷特征的表面上形成铝钽碳氮化物阻挡膜。通过沉积多个碳氮化钽膜并在多个碳氮化钽薄膜中的每一个之间沉积铝来形成氮化钽碳氮化物阻挡膜。一个实施例还包括在氮化钽碳氮化物阻挡膜上沉积Ru膜，在Ru膜上沉积Cu籽晶层，并用体积Cu填充凹陷特征。描述了包含氮化钽碳氮化物阻挡膜的半导体器件。

10. 发明申请

US20100248473A1 SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCTOR DEVICES 有权
标题翻译：用于半导体器件的金属包层的选择性沉积
公开(公告)号：US20100248473A1
公开(公告)日：2010-09-30
申请号：US12414917
申请日：2009-03-31
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Satohiko Hoshino , Hiroyuki Nagai , Yuki Chiba , Frank M. Cerio, JR.
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Satohiko Hoshino , Hiroyuki Nagai , Yuki Chiba , Frank M. Cerio, JR.
IPC分类号： H01L21/768 , H01L21/3205
CPC分类号： H01L21/76849 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76846 , H01L21/76856 , H01L21/76859 , H01L21/76883
摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing metal surfaces and dielectric layer surfaces, and modifying the dielectric layer surfaces by exposure to a reactant gas containing a hydrophobic functional group, where the modifying substitutes a hydrophilic functional group in the dielectric layer surfaces with a hydrophobic functional group. The method further includes depositing metal-containing cap layers selectively on the metal surfaces by exposing the modified dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor.
摘要翻译：一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中的方法。在一个实施例中，该方法包括提供含有金属表面和电介质层表面的图案化衬底，以及通过暴露于含有疏水官能团的反应气体来修饰电介质层表面，其中修饰取代介电层表面中的亲水性官能团具有疏水官能团。该方法还包括通过将改性的介电层表面和金属表面暴露于含有金属的前体蒸气的沉积气体中，将金属含有的盖层选择性地沉积在金属表面上。

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