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1. 发明申请

US20070218683A1 Method of integrating PEALD Ta- containing films into Cu metallization 有权
标题翻译：将含有PEALD的含Ta膜的Cu合金化的方法
公开(公告)号：US20070218683A1
公开(公告)日：2007-09-20
申请号：US11378263
申请日：2006-03-20
申请人： Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
IPC分类号： C23C16/00 , H05H1/00
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译：用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

2. 发明申请

US20070116873A1 Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开
标题翻译：用于热和等离子体增强气相沉积的装置和操作方法
公开(公告)号：US20070116873A1
公开(公告)日：2007-05-24
申请号：US11281376
申请日：2005-11-18
申请人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
发明人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
IPC分类号： H05H1/24 , C23C16/00 , G06F19/00
CPC分类号： C23C16/45517 , C23C16/4401 , C23C16/4412 , H01J37/32082 , H01J37/32495 , H01J37/32522
摘要： A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.
摘要翻译：一种用于气相沉积在基板上的方法，计算机可读介质和系统，其将气相沉积系统的第一组件保持在第一温度，将气相沉积系统的第二组件保持在低于第一温度的降低的温度，所述第一组件的处理空间中的所述衬底与所述第二组件中的传送空间真空隔离，并且将材料沉积在所述衬底上。因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接并且被配置为支撑所述基板，以及密封组件，其被配置为将所述处理空间与所述传送空间分离。第一组件被配置为保持在第一温度，并且第二组件构造成保持在低于第一温度的降低的温度。

3. 发明授权

US07959985B2 Method of integrating PEALD Ta-containing films into Cu metallization 有权
标题翻译：将含有PEALD的含Ta的膜整合到Cu金属化中的方法
公开(公告)号：US07959985B2
公开(公告)日：2011-06-14
申请号：US11378263
申请日：2006-03-20
申请人： Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Tsukasa Matsuda , Masamichi Hara , Jacques Faguet , Yasushi Mizusawa
IPC分类号： C23C16/00 , H05H1/00
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译：用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

4. 发明申请

US20080075835A1 Integrated substrate processing in a vacuum processing tool 有权
标题翻译：在真空加工工具中集成基板加工
公开(公告)号：US20080075835A1
公开(公告)日：2008-03-27
申请号：US11526767
申请日：2006-09-26
申请人： Tadahiro Ishizaka , Masamichi Hara , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Masamichi Hara , Yasushi Mizusawa
IPC分类号： B05D5/12 , C23C16/00
CPC分类号： C23C16/54 , C23C14/566
摘要： A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8×10−8 Torr or lower, preferably 5×10−8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.
摘要翻译：提供了用于Cu金属化中的集成基板处理的方法和系统。该方法包括在真空处理工具中提供衬底，该真空处理工具包含配置成处理衬底的多个处理系统和被配置为在多个处理系统之间的真空条件下传送衬底的衬底传送系统，以及对基质。多个处理系统和基板传送系统在背景气体的基础压力下保持6.8×10 -8乇或更低，优选为5×10 -8乇或更低，在综合沉积工艺。根据一个实施例，集成工艺包括在衬底上沉积阻挡金属层，以及在阻挡金属层上沉积Cu层。根据另一个实施例，集成工艺还包括在阻挡金属层上沉积Ru层，以及在Ru层上沉积Cu层。

5. 发明授权

US08399353B2 Methods of forming copper wiring and copper film, and film forming system 有权
标题翻译：形成铜线和铜膜的方法以及成膜系统
公开(公告)号：US08399353B2
公开(公告)日：2013-03-19
申请号：US13081172
申请日：2011-04-06
申请人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara
发明人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara
IPC分类号： H01L21/768
CPC分类号： C23C16/16 , C23C14/024 , C23C14/025 , C23C14/046 , C23C14/165 , C23C14/345 , C23C14/568 , C23C14/5873 , C23C16/0272 , C23C16/045 , C23C16/54 , C23C16/56 , C23C28/023 , H01L21/2855 , H01L21/28556 , H01L21/76846 , H01L21/76882 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.
摘要翻译：提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并通过在加热衬底的同时在PVD膜上形成Cu膜，将铜包埋在沟槽或孔中，使得发生铜进入沟槽或孔的迁移。

6. 发明申请

US20070116872A1 Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开
标题翻译：用于热和等离子体增强气相沉积的装置和操作方法
公开(公告)号：US20070116872A1
公开(公告)日：2007-05-24
申请号：US11281372
申请日：2005-11-18
申请人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
发明人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
IPC分类号： C23C16/00 , H05H1/24 , G06F19/00 , A01K15/02
CPC分类号： C23C16/4585 , C23C16/12 , C23C16/14 , C23C16/16 , C23C16/18 , C23C16/303 , C23C16/32 , C23C16/34 , C23C16/36 , C23C16/402 , C23C16/403 , C23C16/405 , C23C16/45525 , C23C16/45536 , C23C16/45544 , C23C16/46 , C23C16/5096 , H01J37/32082 , H01J37/32495 , H01J2237/2001
摘要： A method, computer readable medium, and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support and translate the substrate between a first position in the transfer space to a second position in the process space. The system includes a sealing assembly configured to impede gas flow between the process space and the transfer space during translation of the substrate within the process space.
摘要翻译：一种在衬底上进行气相沉积的方法，计算机可读介质和系统，其将衬底处理在与所述处理系统的传送空间真空隔离的处理系统的处理空间中，在第一位置或在处理空间中的第二位置，同时保持与传送空间的真空隔离，并且在第一位置或第二位置处将材料沉积在所述基板上。因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接到所述第二组件并且被配置为在所述传送空间中的第一位置和所述处理空间中的第二位置之间支撑和平移所述衬底。该系统包括密封组件，该密封组件构造成在工艺空间内的衬底平移过程中阻碍工艺空间与传送空间之间的气体流动。

7. 发明授权

US08859422B2 Method of forming copper wiring and method and system for forming copper film 有权
标题翻译：形成铜线的方法及铜膜形成方法及系统
公开(公告)号：US08859422B2
公开(公告)日：2014-10-14
申请号：US13359138
申请日：2012-01-26
申请人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
发明人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
IPC分类号： H01L21/44
CPC分类号： H01L21/02104 , C23C14/025 , C23C14/046 , C23C14/345 , C23C14/541 , C23C14/5806 , C23C16/16 , H01J37/32899 , H01J37/34
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
摘要翻译：提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得发生铜进入沟槽或孔的迁移。

8. 发明授权

US08034406B2 Integrated substrate processing in a vacuum processing tool 有权
标题翻译：在真空加工工具中集成基板加工
公开(公告)号：US08034406B2
公开(公告)日：2011-10-11
申请号：US11526767
申请日：2006-09-26
申请人： Tadahiro Ishizaka , Masamichi Hara , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Masamichi Hara , Yasushi Mizusawa
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： C23C16/54 , C23C14/566
摘要： A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8×10−8 Ton or lower, preferably 5×10−8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.
摘要翻译：提供了用于Cu金属化中的集成基板处理的方法和系统。该方法包括在真空处理工具中提供衬底，该真空处理工具包含配置成处理衬底的多个处理系统和被配置为在多个处理系统之间的真空条件下传送衬底的衬底传送系统，以及对基质。在整个沉积过程中，多个处理系统和基板传送系统将背景气体的基础压力保持在6.8×10-8吨或更低，优选5×10-8托或更低。根据一个实施例，集成工艺包括在衬底上沉积阻挡金属层，以及在阻挡金属层上沉积Cu层。根据另一实施例，集成工艺还包括在阻挡金属层上沉积Ru层，以及在Ru层上沉积Cu层。

9. 发明授权

US08999841B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08999841B2
公开(公告)日：2015-04-07
申请号：US13566515
申请日：2012-08-03
申请人： Tadahiro Ishizaka , Atsushi Gomi , Kenzi Suzuki , Tatsuo Hatano , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Atsushi Gomi , Kenzi Suzuki , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/44 , H01L21/768 , H01L21/02 , H01L21/3105 , H01L21/67 , C23C14/02 , C23C14/04 , C23C16/02 , C23C16/04 , H01L21/285
CPC分类号： H01L21/76841 , C23C14/02 , C23C14/046 , C23C16/02 , C23C16/045 , H01L21/02063 , H01L21/02126 , H01L21/28556 , H01L21/3105 , H01L21/67207 , H01L21/76814 , H01L21/76826 , H01L21/76843
摘要： A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.
摘要翻译：半导体器件制造方法包括：通过供给含有H离子和H基团的等离子体或包含NH x（x）的等离子体，将其表面是疏水性的并且形成在电介质膜中的掩埋凹槽的表面改性为亲水状态是1,2或3）离子和NH x自由基，形成在衬底上并含有硅，碳，氢和氧的电介质膜，埋入凹部的底部用下导电层暴露; 并且在凹部的亲水性表面上直接形成由Ru膜形成的粘合膜。该方法还包括在凹槽中形成导电路径的铜。

10. 发明申请

US20130237053A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20130237053A1
公开(公告)日：2013-09-12
申请号：US13876682
申请日：2011-09-26
申请人： Tadahiro Ishizaka , Takashi Sakuma , Tatsuo Hatano , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Toshihiko Fukushima , Hiroyuki Toshima , Masaya Kawamata , Yasushi Mizusawa , Takara Kato
发明人： Tadahiro Ishizaka , Takashi Sakuma , Tatsuo Hatano , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Toshihiko Fukushima , Hiroyuki Toshima , Masaya Kawamata , Yasushi Mizusawa , Takara Kato
IPC分类号： H01L21/768 , H01J37/34
CPC分类号： H01L21/768 , C23C14/021 , C23C14/024 , C23C14/14 , C23C14/345 , C23C14/3492 , C23C14/541 , C23C14/542 , H01J37/34 , H01L21/2855 , H01L21/76865 , H01L21/76873 , H01L21/76877 , H01L21/76882
摘要： A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating.
摘要翻译：一种在处理室中从具有等离子体的金属靶产生金属离子的薄膜形成方法，并且在偏压下吸引金属离子以在形成有沟槽的目标物体上沉积金属薄膜。该方法包括：从靶产生金属离子并以偏压将金属离子吸引到目标物体中，以在沟槽中形成基膜; 在不产生金属离子的状态下以偏压电离稀有气体，并将产生的离子吸引到目标物体中以蚀刻基膜; 并且等离子体溅射靶以产生金属离子并以高频功率将金属离子吸引到物体中以偏压沉积作为金属膜的主膜，同时通过加热回流主膜。

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