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1. 发明授权

US08999841B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08999841B2
公开(公告)日：2015-04-07
申请号：US13566515
申请日：2012-08-03
申请人： Tadahiro Ishizaka , Atsushi Gomi , Kenzi Suzuki , Tatsuo Hatano , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Atsushi Gomi , Kenzi Suzuki , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/44 , H01L21/768 , H01L21/02 , H01L21/3105 , H01L21/67 , C23C14/02 , C23C14/04 , C23C16/02 , C23C16/04 , H01L21/285
CPC分类号： H01L21/76841 , C23C14/02 , C23C14/046 , C23C16/02 , C23C16/045 , H01L21/02063 , H01L21/02126 , H01L21/28556 , H01L21/3105 , H01L21/67207 , H01L21/76814 , H01L21/76826 , H01L21/76843
摘要： A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.
摘要翻译：半导体器件制造方法包括：通过供给含有H离子和H基团的等离子体或包含NH x（x）的等离子体，将其表面是疏水性的并且形成在电介质膜中的掩埋凹槽的表面改性为亲水状态是1,2或3）离子和NH x自由基，形成在衬底上并含有硅，碳，氢和氧的电介质膜，埋入凹部的底部用下导电层暴露; 并且在凹部的亲水性表面上直接形成由Ru膜形成的粘合膜。该方法还包括在凹槽中形成导电路径的铜。

2. 发明授权

US07491430B2 Deposition method for forming a film including metal, nitrogen and carbon 有权
标题翻译：用于形成包括金属，氮和碳的膜的沉积方法
公开(公告)号：US07491430B2
公开(公告)日：2009-02-17
申请号：US11180597
申请日：2005-07-14
申请人： Tadahiro Ishizaka , Atsushi Gomi , Tatsuo Hatano
发明人： Tadahiro Ishizaka , Atsushi Gomi , Tatsuo Hatano
IPC分类号： H05H1/24
CPC分类号： C23C16/5096 , C23C16/36 , C23C16/45525 , C23C16/45542 , H01J37/32082 , H01L21/28562 , H01L21/76843
摘要： A deposition method for forming a thin film on a processed substrate by supplying a first gas including a metal, nitrogen, and carbon and a second gas reducing the first gas into a process vessel where a substrate holding table for holding the processed substrate is provided inside thereof, the deposition method includes a first step supplying the first process gas into the process vessel, and a second step supplying the second process gas so that the second process gas is plasma-excited by a plasma-exciting part provided in the process vessel. A content of at least one of the metal, nitrogen, and carbon in the thin film is controlled by changing a radio frequency power applied to the plasma-exciting part.
摘要翻译：一种沉积方法，用于通过提供包括金属，氮和碳的第一气体和将第一气体还原到处理容器中来形成薄膜，所述处理容器内设有用于保持处理过的基板的基板保持台，沉积方法包括将第一工艺气体供应到处理容器中的第一步骤，以及提供第二工艺气体的第二步骤，使得第二工艺气体被设置在处理容器中的等离子体激发部分等离子体激发。通过改变施加到等离子体激发部分的射频功率来控制薄膜中的金属，氮和碳中的至少一个的含量。

3. 发明授权

US08399353B2 Methods of forming copper wiring and copper film, and film forming system 有权
标题翻译：形成铜线和铜膜的方法以及成膜系统
公开(公告)号：US08399353B2
公开(公告)日：2013-03-19
申请号：US13081172
申请日：2011-04-06
申请人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara
发明人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara
IPC分类号： H01L21/768
CPC分类号： C23C16/16 , C23C14/024 , C23C14/025 , C23C14/046 , C23C14/165 , C23C14/345 , C23C14/568 , C23C14/5873 , C23C16/0272 , C23C16/045 , C23C16/54 , C23C16/56 , C23C28/023 , H01L21/2855 , H01L21/28556 , H01L21/76846 , H01L21/76882 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs.
摘要翻译：提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并通过在加热衬底的同时在PVD膜上形成Cu膜，将铜包埋在沟槽或孔中，使得发生铜进入沟槽或孔的迁移。

4. 发明申请

US20120222782A1 METHOD FOR FORMING Cu WIRING 审中-公开
标题翻译：形成铜线的方法
公开(公告)号：US20120222782A1
公开(公告)日：2012-09-06
申请号：US13496714
申请日：2010-08-27
申请人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Osamu Yokoyama , Tadahiro Ishizaka , Chiaki Yasumuro , Takara Kato
发明人： Atsushi Gomi , Yasushi Mizusawa , Tatsuo Hatano , Osamu Yokoyama , Tadahiro Ishizaka , Chiaki Yasumuro , Takara Kato
IPC分类号： C21D1/26 , B05D5/12 , B05D3/02
CPC分类号： H01L23/53238 , H01L21/76829 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76877 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： In a Cu wiring forming method which is followed by a post-process including a treatment of a temperature of 500° C. or higher, an adhesion film made of a metal having a lattice spacing that differs from the lattice spacing of Cu by 10% or less is formed on a substrate having a trench and/or a hole in the surface such that the adhesion film is deposited on at least the bottom and side surfaces of the trench and/or hole. A Cu film is formed on the adhesion film to fill the trench and/or hole. An annealing process is performed on the substrate on which the Cu film has been formed at 350° C. or higher. The CU film is polished to leave only the part of the Cu film which corresponds to the trench and/or hole. A cap is formed on the polished Cu film to form a Cu wiring.
摘要翻译：在Cu布线形成方法中，其后是包括处理500℃或更高温度的后续处理，由具有不同于Cu的晶格间距的晶格间距的金属制成的粘合膜为10％或更少的表面形成在具有沟槽和/或孔的衬底上，使得粘附膜沉积在沟槽和/或孔的至少底部和侧表面上。在粘合膜上形成Cu膜以填充沟槽和/或孔。在其上形成有Cu膜的基板上进行退火处理为350℃以上。 CU膜被抛光以仅留下对应于沟槽和/或孔的Cu膜的部分。在抛光的Cu膜上形成盖以形成Cu布线。

5. 发明申请

US20060029748A1 Deposition method 有权
标题翻译：沉积法
公开(公告)号：US20060029748A1
公开(公告)日：2006-02-09
申请号：US11180597
申请日：2005-07-14
申请人： Tadahiro Ishizaka , Atsushi Gomi , Tatsuo Hatano
发明人： Tadahiro Ishizaka , Atsushi Gomi , Tatsuo Hatano
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/5096 , C23C16/36 , C23C16/45525 , C23C16/45542 , H01J37/32082 , H01L21/28562 , H01L21/76843
摘要： A deposition method for forming a thin film on a processed substrate by supplying a first gas including a metal, nitrogen, and carbon and a second gas reducing the first gas into a process vessel where a substrate holding table for holding the processed substrate is provided inside thereof, the deposition method includes a first step supplying the first process gas into the process vessel, and a second step supplying the second process gas so that the second process gas is-plasma-excited by a plasma-exciting part provided in the process vessel. A content of at least one of the metal, nitrogen, and carbon in the thin film is controlled by changing a radio frequency power applied to the plasma-exciting part.
摘要翻译：一种沉积方法，用于通过提供包括金属，氮和碳的第一气体和将第一气体还原到处理容器中来形成薄膜，所述处理容器内设有用于保持处理过的基板的基板保持台，沉积方法包括将第一工艺气体供应到处理容器中的第一步骤，以及供给第二工艺气体的第二步骤，使得第二工艺气体被设置在处理容器中的等离子体激发部件等离子体激发。通过改变施加到等离子体激发部分的射频功率来控制薄膜中的金属，氮和碳中的至少一个的含量。

6. 发明申请

US20130237053A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20130237053A1
公开(公告)日：2013-09-12
申请号：US13876682
申请日：2011-09-26
申请人： Tadahiro Ishizaka , Takashi Sakuma , Tatsuo Hatano , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Toshihiko Fukushima , Hiroyuki Toshima , Masaya Kawamata , Yasushi Mizusawa , Takara Kato
发明人： Tadahiro Ishizaka , Takashi Sakuma , Tatsuo Hatano , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Toshihiko Fukushima , Hiroyuki Toshima , Masaya Kawamata , Yasushi Mizusawa , Takara Kato
IPC分类号： H01L21/768 , H01J37/34
CPC分类号： H01L21/768 , C23C14/021 , C23C14/024 , C23C14/14 , C23C14/345 , C23C14/3492 , C23C14/541 , C23C14/542 , H01J37/34 , H01L21/2855 , H01L21/76865 , H01L21/76873 , H01L21/76877 , H01L21/76882
摘要： A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating.
摘要翻译：一种在处理室中从具有等离子体的金属靶产生金属离子的薄膜形成方法，并且在偏压下吸引金属离子以在形成有沟槽的目标物体上沉积金属薄膜。该方法包括：从靶产生金属离子并以偏压将金属离子吸引到目标物体中，以在沟槽中形成基膜; 在不产生金属离子的状态下以偏压电离稀有气体，并将产生的离子吸引到目标物体中以蚀刻基膜; 并且等离子体溅射靶以产生金属离子并以高频功率将金属离子吸引到物体中以偏压沉积作为金属膜的主膜，同时通过加热回流主膜。

7. 发明授权

US08859422B2 Method of forming copper wiring and method and system for forming copper film 有权
标题翻译：形成铜线的方法及铜膜形成方法及系统
公开(公告)号：US08859422B2
公开(公告)日：2014-10-14
申请号：US13359138
申请日：2012-01-26
申请人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
发明人： Tadahiro Ishizaka , Atsushi Gomi , Takara Kato , Osamu Yokoyama , Takashi Sakuma , Chiaki Yasumuro , Hiroyuki Toshima , Tatsuo Hatano , Yasushi Mizusawa , Masamichi Hara , Kenzi Suzuki
IPC分类号： H01L21/44
CPC分类号： H01L21/02104 , C23C14/025 , C23C14/046 , C23C14/345 , C23C14/541 , C23C14/5806 , C23C16/16 , H01J37/32899 , H01J37/34
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
摘要翻译：提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得发生铜进入沟槽或孔的迁移。

8. 发明申请

US20130203250A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20130203250A1
公开(公告)日：2013-08-08
申请号：US13566515
申请日：2012-08-03
申请人： Tadahiro Ishizaka , Atsushi Gomi , Kenzi Suzuki , Tatsuo Hatano , Yasushi Mizusawa
发明人： Tadahiro Ishizaka , Atsushi Gomi , Kenzi Suzuki , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/768
CPC分类号： H01L21/76841 , C23C14/02 , C23C14/046 , C23C16/02 , C23C16/045 , H01L21/02063 , H01L21/02126 , H01L21/28556 , H01L21/3105 , H01L21/67207 , H01L21/76814 , H01L21/76826 , H01L21/76843
摘要： A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.
摘要翻译：半导体器件制造方法包括：通过供给含有H离子和H基团的等离子体或包含NH x（x）的等离子体，将其表面是疏水性的并且形成在电介质膜中的掩埋凹槽的表面改性为亲水状态是1,2或3）离子和NH x自由基，形成在衬底上并含有硅，碳，氢和氧的电介质膜，埋入凹部的底部用下导电层暴露; 并且在凹部的亲水性表面上直接形成由Ru膜形成的粘合膜。该方法还包括在凹槽中形成导电路径的铜。

9. 发明申请

US20060008595A1 Film-forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060008595A1
公开(公告)日：2006-01-12
申请号：US11174532
申请日：2005-07-06
申请人： Tadahiro Ishizaka , Atsushi Gomi , Tatsuo Hatano
发明人： Tadahiro Ishizaka , Atsushi Gomi , Tatsuo Hatano
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/45514 , C23C16/34 , C23C16/36 , C23C16/45544 , C23C16/45565 , C23C16/45574 , C23C16/5096 , H01J37/32449
摘要： A plurality of gases are prevented from being mixed with each other in a gas supply path when forming a film on a substrate to be processed so as to prevent generation of particles to enable a stable and clean film formation. A film containing metal is formed on a substrate to be processed by supplying a first process gas containing the metal and a second process gas for reducing the first process gas to a process chamber. The first process gas is supplied from a first gas supply passage to the process chamber. The second process gas is supplied from a second gas supply passage to the process chamber and the second process gas is plasma-excited in the process chamber. A first reverse flow preventing gas consisting of H2 or He is supplied to the process chamber from the first gas supply passage when supplying the second process gas.
摘要翻译：当在待处理的基板上形成膜时，防止多个气体在气体供给路径中彼此混合，以防止颗粒的产生，从而能够形成稳定和清洁的膜。通过将含有金属的第一工艺气体和用于将第一工艺气体还原到处理室的第二工艺气体，在待加工的衬底上形成含有金属的膜。第一处理气体从第一气体供应通道供应到处理室。第二工艺气体从第二气体供应通道供应到处理室，并且第二工艺气体在处理室中被等离子体激发。当供给第二处理气体时，由第二气体供给通道供给由H 2 H或He组成的第一反向流动防止气体到处理室。

10. 发明申请

US20120247949A1 FILM FORMING METHOD, RESPUTTERING METHOD, AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法，调色方法和薄膜成型装置
公开(公告)号：US20120247949A1
公开(公告)日：2012-10-04
申请号：US13433527
申请日：2012-03-29
申请人： Takashi SAKUMA , Tadahiro Ishizaka , Tatsuo Hatano , Shiro Hayashi , Toshiaki Fujisato , Hiroyuki Yokohara , Hiroyuki Toshima
发明人： Takashi SAKUMA , Tadahiro Ishizaka , Tatsuo Hatano , Shiro Hayashi , Toshiaki Fujisato , Hiroyuki Yokohara , Hiroyuki Toshima
IPC分类号： C23C14/34
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/185 , C23C14/345 , C23C14/5833 , C23C14/5873 , C23C14/5893 , C23C16/509 , H01L21/76843 , H01L21/76865 , H01L21/76873
摘要： A film forming method includes depositing a metal thin film on a target substrate by generating an inductively coupled plasma in a processing chamber while introducing a plasma generating gas in the processing chamber with the substrate disposed on a placing table, by supplying DC power to a metal target from a DC power source, and by applying high-frequency bias to the placing table. A resputtering method includes resputtering the deposited metal thin film by stopping the generating of the inductively coupled plasma, by stopping the power supply from the DC power source, and by applying the high-frequency bias to the placing table while introducing the plasma generating gas in the processing chamber to form a capacitively coupled plasma in the processing chamber and by attracting ions of the plasma generating gas to the target substrate where the metal thin film is deposited.
摘要翻译：一种成膜方法，包括通过在处理室中产生电感耦合等离子体，同时在处理室中引入等离子体产生气体，其中衬底设置在放置台上，通过向金属提供DC电力，在目标衬底上沉积金属薄膜来自直流电源的目标，以及通过对放置台应用高频偏压。再溅射方法包括：通过停止来自直流电源的电力供给，通过停止产生电感耦合等离子体，并将高频偏压施加到放置台，同时将等离子体产生气体引入到所述处理室在所述处理室中形成电容耦合的等离子体，并且通过将所述等离子体产生气体的离子吸附到沉积金属薄膜的目标衬底上。

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