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1. 发明申请

WO2005054798A1 IMPROVED OPTICAL RADIATION SENSOR SYSTEM 审中-公开
标题翻译：改进的光学辐射传感器系统
公开(公告)号：WO2005054798A1
公开(公告)日：2005-06-16
申请号：PCT/CA2004/002058
申请日：2004-11-29
申请人： TROJAN TECHNOLOGIES INC. , KNIGHT, Gordon, D. , VERDUN, Alex, M., W. , DRAGOI, Catalina, M.
发明人： KNIGHT, Gordon, D. , VERDUN, Alex, M., W. , DRAGOI, Catalina, M.
IPC分类号： G01J1/04
CPC分类号： C02F1/325 , C02F2201/326 , G01J1/0204 , G01J1/0266 , G01J1/0437 , G01J1/06 , G01J1/429 , G01J2001/0485 , G01J2001/063
摘要： There is described an optical radiation sensor device for detecting radiation in a radiation field. The device comprises a sensor element capable of detecting and responding to incident radiation from the radiation field and a radiation window interposed between the sensor element and the radiation field. The radiation window comprises a non-circular (preferably square) shaped radiation transparent opening. The optical radiation sensor device can be used in a so-called dynamic manner while mitigating or obviating the detection errors resulting from the use of a circular-shaped attenuating aperture and/or angular (even minor) misalignment of the sensor device with respect to the array of radiation sources when multiple such circular-shaped attenuating apertures are used.
摘要翻译：描述了用于检测辐射场中的辐射的光学辐射传感器装置。该装置包括能够检测和响应来自辐射场的入射辐射的传感器元件和插入在传感器元件和辐射场之间的辐射窗口。辐射窗包括非圆形（优选正方形）形状的辐射透明开口。光学辐射传感器装置可以以所谓的动态方式使用，同时减轻或消除由于使用圆形衰减孔径和/或传感器装置相对于当使用多个这样的圆形衰减孔时，辐射源阵列。

2. 发明申请

WO2005046013A1 METHOD FOR MANUFACTURING GRATINGS IN SEMICONDUCTOR MATERIALS THAT READILY OXIDISE 审中-公开
标题翻译：在半导体材料中制备易于氧化的材料的方法
公开(公告)号：WO2005046013A1
公开(公告)日：2005-05-19
申请号：PCT/IB2004/003537
申请日：2004-10-29
申请人： BOOKHAM TECHNOLOGY PLC , FINLAY, Richard , KNIGHT, Gordon, D. , GOODCHILD, Darren, P. , HINZER, Karin
发明人： FINLAY, Richard , KNIGHT, Gordon, D. , GOODCHILD, Darren, P. , HINZER, Karin
IPC分类号： H01S5/12
CPC分类号： G02B5/1857 , H01L21/3083 , H01S5/12 , H01S5/1228 , H01S5/1231 , H01S5/2081 , H01S2301/173
摘要： The present invention is a combination of in-situ etching with a grating mask pattern comprised only of semiconductor material, together with the fabrication of a protective layer beneath the semiconductor grating mask that protects the semiconductor material that readily oxidises. As such the present invention is based on a two-stage process. First the grating pattern is defined in a semiconductor material, wherein this pattern is called the semiconductor grating mask. The semiconductor grating mask sits on top of a layer of protective material, which in turn is on top of the semiconductor material that readily oxidises, wherein the protective layer prevents oxidation of the material below.The semiconductor structure is then moved to a reactor, where, in the second stage, the mask pattern is transferred into the underlying protective layer and the semiconductor material that readily oxidises, by in-situ etching. The grating is then overgrown in the same reactor without exposing the etched grating to the atmosphere. The overgrown material protects the underlying semiconductor material from oxidation when the structure is removed from the reactor.
摘要翻译：本发明是原位蚀刻与仅由半导体材料组成的光栅掩模图案的组合，以及在半导体光栅掩模下面制造保护半导体材料的保护层，其保护易于氧化。因此，本发明基于两阶段过程。首先，光栅图案被限定在半导体材料中，其中该图案被称为半导体光栅掩模。半导体光栅掩模位于保护材料层的顶部，保护材料层又在半导体材料的顶部上容易氧化，其中保护层防止材料在下面氧化。然后将半导体结构移至反应器，其中在第二阶段中，通过原位蚀刻将掩模图案转移到下面的保护层和容易氧化的半导体材料中。然后光栅在相同的反应器中过度生长，而不会将蚀刻的光栅暴露在大气中。当结构从反应器中移除时，杂色成长的材料保护下面的半导体材料免于氧化。

3. 发明申请

WO2005043701A1 METHOD FOR MANUFACTURING GRATINGS IN SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：在半导体材料中制造光刻的方法
公开(公告)号：WO2005043701A1
公开(公告)日：2005-05-12
申请号：PCT/IB2004/003538
申请日：2004-10-28
申请人： BOOKHAM TECHNOLOGY PLC , KNIGHT, Gordon, D. , CLEROUX, Michael , FINLAY, Richard
发明人： KNIGHT, Gordon, D. , CLEROUX, Michael , FINLAY, Richard
IPC分类号： H01S5/12
CPC分类号： H01S5/12 , H01L21/30612 , H01S5/1228 , H01S5/1231 , H01S5/2081 , H01S5/3235 , H01S2301/173 , H01S2304/04
摘要： The present invention is a combination of in-situ etching using a grating mask that is formed in semiconductor material only and the subsequent overgrowth of additional semiconductor material to enclose the grating structure prior to exposure to the atmosphere and the contaminants therein. The present invention is based on a two-stage process. First the grating pattern is defined in a semiconductor material, which is the grating mask. This grating mask is created at a position above the material that is to ultimately contain the grating pattern. Upon the completion of the fabrication of the grating mask, the semiconductor structure is moved to a reactor, where in the second stage, the grating pattern defined by the grating mask is transferred into the underlying semiconductor layers by in-situ etching. The grating is subsequently overgrown with additional semiconductor material while in the same reactor, thereby not exposing the etched grating pattern to the atmosphere thereby reducing the contaminants in the grating structure of the semiconductor laser.
摘要翻译：本发明是使用仅在半导体材料中形成的光栅掩模的原位蚀刻和随后的附加半导体材料的过度生长以在暴露于大气和其中的污染物之前封装光栅结构的组合。本发明基于两阶段方法。首先，光栅图案被定义在半导体材料中，其是光栅掩模。该光栅掩模在最终包含光栅图案的材料上方的位置处产生。在完成光栅掩模的制造之后，将半导体结构移动到电抗器，其中在第二阶段，由光栅掩模限定的光栅图案通过原位蚀刻转移到下面的半导体层中。光栅随后在相同的反应器中长满了附加的半导体材料，从而不会将蚀刻的光栅图案暴露于大气中，从而减少了半导体激光器的光栅结构中的污染物。

4. 发明申请

WO2004001918A2 A GUIDED SELF-ALIGNED LASER STRUCTURE WITH CURRENT BLOCKING LAYER 审中-公开
标题翻译：具有电流阻塞层的引导自对准激光器结构
公开(公告)号：WO2004001918A2
公开(公告)日：2003-12-31
申请号：PCT/GB2003/002700
申请日：2003-06-23
申请人： BOOKHAM TECHNOLOGY PLC , LICHTENSTEIN, Norbert, L. , FILY, Arnaud , SCHMIDT, Berthold , REID, Benoit , KNIGHT, Gordon, D. , GLEW, Rick
发明人： LICHTENSTEIN, Norbert, L. , FILY, Arnaud , SCHMIDT, Berthold , REID, Benoit , KNIGHT, Gordon, D. , GLEW, Rick
IPC分类号： H01S3/00
CPC分类号： H01S5/2232 , H01S5/0655 , H01S5/2059 , H01S5/222 , H01S5/2226 , H01S5/2231
摘要： A self-aligned laser structure with an integral active and guiding layer is disclosed. It is comprised of a continuous active region and a current blocking region forming a lateral waveguide. The blocking region has an index of refraction n1 and a continuous guiding layer has an index of refraction n2, wherein n2 is greater than n1. The blocking region has a real refractive index step to form a transverse optical mode.
摘要翻译：公开了具有整体有源和引导层的自对准激光器结构。它由连续的有源区和形成横向波导的电流阻挡区构成。阻挡区域具有折射率n1，并且连续引导层具有折射率n2，其中n2大于n1。阻挡区域具有实际折射率步骤以形成横向光学模式。

5. 发明公开

EP1697702A1 IMPROVED OPTICAL RADIATION SENSOR SYSTEM 审中-公开
标题翻译：改进的光学辐射传感器系统
公开(公告)号：EP1697702A1
公开(公告)日：2006-09-06
申请号：EP04802235.4
申请日：2004-11-29
申请人： TROJAN TECHNOLOGIES INC.
发明人： KNIGHT, Gordon, D. , VERDUN, Alex, M., W. , DRAGOI, Catalina, M.
IPC分类号： G01J1/04 , C02F1/32
CPC分类号： C02F1/325 , C02F2201/326 , G01J1/0204 , G01J1/0266 , G01J1/0437 , G01J1/06 , G01J1/429 , G01J2001/0485 , G01J2001/063
摘要： There is described an optical radiation sensor device for detecting radiation in a radiation field. The device comprises a sensor element capable of detecting and responding to incident radiation from the radiation field and a radiation window interposed between the sensor element and the radiation field. The radiation window comprises a non-circular (preferably square) shaped radiation transparent opening. The optical radiation sensor device can be used in a so-called dynamic manner while mitigating or obviating the detection errors resulting from the use of a circular-shaped attenuating aperture and/or angular (even minor) misalignment of the sensor device with respect to the array of radiation sources when multiple such circular-shaped attenuating apertures are used.

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