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    • 1. 发明申请
    • HIGH POWER SEMICONDUCTOR LASER DIODE
    • 高功率半导体激光二极管
    • WO2007057715A1
    • 2007-05-24
    • PCT/GB2006/050399
    • 2006-11-20
    • BOOKHAM TECHNOLOGY PLCSCHMIDT, BertholdPAWLIK, Susanne
    • SCHMIDT, BertholdPAWLIK, Susanne
    • H01S5/22H01S5/0625
    • H01S5/22H01S5/0655H01S5/1014H01S5/1017H01S5/1082H01S5/16H01S5/323
    • Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump lasers for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability. This is achieved by separating the waveguide ridge into an active main ridge section (4) and at least one separate section (12) located at an end of the laser diode, which may be passive. The separation is provided by a trench or gap (10) in the waveguide ridge. The active waveguide section (4) is at least partly covered by the electrode (6) providing the carriers that does not extend to cover the separate ridge section (12) , which thus remains essentially free of carriers injected through said electrode (6) . There may be a plurality such separate ridge sections, e.g. two separate ridge sections (12, 212) , one at each end of the laser diode, dividing the ridge waveguide into three ridge sections, an active main ridge section (4) in the center and a passive separate ridge section (12, 212) at either end. The trenches (10, 110) between the sections and/or the shape and size of the separate ridge section (s) (12, 212) may be adjusted to act as spatial mode filters.
    • 半导体激光二极管,特别是高功率AlGaAs基脊波导激光二极管,通常用于光电子学中,作为所谓的用于光通信线路中的光纤放大器的泵浦激光器。 为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化,本发明涉及这种器件的改进的设计,特别地显着地最小化或避免了这种激光器(前端)部分退化的改进 二极管并显着增加长期稳定性。 这通过将波导脊分离成有源主脊部分(4)和位于激光二极管的端部的至少一个分离部分(12)来实现,该部分可以是被动的。 分离由波导脊中的沟槽或间隙(10)提供。 有源波导部分(4)至少部分被电极(6)覆盖,电极(6)提供不延伸以覆盖分离的脊部分(12)的载体,因此基本上不含通过所述电极(6)注入的载体。 可以存在多个这样的分离的脊部分,例如。 两个独立的脊部分(12,212),一个在激光二极管的每一端,将脊波导分成三个脊部分,中心的主动主脊部分(4)和被动分离的脊部分(12,212) 在任一端。 部分之间的沟槽(10,110)和/或分离的脊部分(12,212)的形状和尺寸可以被调整以用作空间模式滤波器。
    • 5. 发明申请
    • HIGH POWER SEMICONDUCTOR LASER DIODE AND METHOD FOR MAKING SUCH A DIODE
    • 高功率半导体激光二极管及其制造方法
    • WO2004027951A1
    • 2004-04-01
    • PCT/IB2003/003929
    • 2003-08-22
    • BOOKHAM TECHNOLOGY PLCTRAUT, SilkeSCHMIDT, BertholdSVERDLOV, BorisTHIES, Achim
    • TRAUT, SilkeSCHMIDT, BertholdSVERDLOV, BorisTHIES, Achim
    • H01S5/22
    • H01S5/22H01S5/0425H01S5/0655H01S5/20H01S5/2022H01S5/2219
    • Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting in a way of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it’s efficiency. Essentially, the novel effect is provided by a structure comprising CIG- for Complex Index Guiding- elements on top of the laser diode. These CIG elements consist of one or a plurality of layers and must contain at least one layer which provides the optical absorption of undesired modes of the lasing wavelength and preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements may be specifically shaped, both in thickness and coverage of the laser’s semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.
    • 半导体激光二极管,特别是高功率脊波导激光二极管,通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。 为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化,本发明涉及这种器件的改进的设计,其改进特别地包括抑制不期望的第一和更高阶模式的方式 激光器消耗能量并且不会对激光器的光输出有贡献,从而降低了其效率。 本质上,新颖的效果由包含CIG的结构提供,用于复合索引引导元件在激光二极管的顶部。 这些CIG元件由一层或多层组成,并且必须包含至少一层,其提供激发波长波长的不期望的模式的光学吸收,并且优选地包含作为半导体的第一接触层的绝缘层。 CIG元件可以在激光器的半导体主体的厚度和覆盖范围内都是特别成形的,以提供所需的抑制特性。 此外,CIG元件可以与通常为激光二极管提供电输入功率的接触层组合。
    • 6. 发明申请
    • HIGH POWER SEMICONDUCTOR LASER DIODE AND METHOD FOR MAKING SUCH A DIODE
    • 高功率半导体激光二极管及其制造方法
    • WO2003092130A1
    • 2003-11-06
    • PCT/IB2003/001677
    • 2003-04-14
    • BOOKHAM TECHNOLOGY PLCPAWLIK, SusanneLICHTENSTEIN, NorbertSCHMIDT, Berthold
    • PAWLIK, SusanneLICHTENSTEIN, NorbertSCHMIDT, Berthold
    • H01S5/10
    • H01S5/22H01S5/0202H01S5/10H01S5/1064H01S5/166H01S5/2036H01S5/204
    • Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting of novel design of the ridge waveguide of the laser. Essentially the novel design consists in a segmented ridge wave- guide having at least two straight segments, i.e. segments with constant, but different cross sections or widths, and at least one flared segment connecting the two different straight segments. A further improvement can be achieved . by combining this approach with a laser diode design termed "unpumped end sections" and described in copending US patent application 09/852 994, entitled "High Power Semiconductor Laser Diode". Preferable for an advantageous manufacturing process is a segmented ridge waveguide design with three straight segments, at least two of them differing in cross section or width, and two flared segments connecting the differing straight segments. This latter design results in a wafer pattern of identical and identically oriented laser diode structures, thus allowing the use of standard manufacturing processes.
    • 半导体激光二极管,特别是高功率脊波导激光二极管,通常用作光电子学中所谓的用于光通信线路中光纤放大器的泵激光二极管。 为了提供这种激光二极管的期望的高功率输出和稳定性并且避免在使用期间的劣化,本发明涉及这种器件的改进的设计,其改进特别地包括激光器的脊形波导的新颖设计。 本质上,新颖的设计包括具有至少两个直段,即具有恒定但不同横截面或宽度的段的分段脊波导,以及连接两个不同直段的至少一个扩口段。 可以进一步改进。 通过将该方法与称为“未实现的端部”的激光二极管设计结合并在题为“大功率半导体激光二极管”的共同未决美国专利申请09/852 994中进行描述。 优选的制造过程优选是具有三个直段的分段脊波导设计,其中至少两个横截面或宽度不同,以及两个连接不同直段的扩口段。 后一种设计导致相同且相同方向的激光二极管结构的晶片图案,从而允许使用标准制造工艺。
    • 9. 发明专利
    • System zur Energie-oder Licht-Erzeugung
    • DE102010014299A1
    • 2011-10-13
    • DE102010014299
    • 2010-04-08
    • SCHMIDT BERTHOLD
    • SCHMIDT BERTHOLD
    • H01L51/00H02N6/00
    • Zur Lösung von Degradationsproblemen bei einem System mit organischen Bestandteilen zur Erzeugung oder Verwendung elektrischer Energie, z. B. in der Licht- oder Solartechnik, wird mittels eines Roll-to-Roll-Verfahrens kontinuierlich oder intermittierend ein Band von identischen, photoempfindlichen oder lichterzeugenden Zellen hergestellt. Von diesen wird jeweils ein vorbestimmter Bandabschnitt aus vorzugsweise mehreren Zellen aktiviert, d. h. zur Energieerzeugung oder Lichtabgabe genutzt, und eine oder mehrere Eigenschaften der genutzten Zellen kontinuierlich überwacht. Beim Abweichen dieser Eigenschaft(en) von vorgegebenen Grenzwerten wird der genutzte Bandabschnitt inaktiviert, d. h. ausser Betrieb gesetzt und durch einen Mechnismus aus dem System herausgeführt. Gleichzeitig wird ein Bandabschnitt mit neuen Zellen in den Bereich der gealterten Zellen eingezogen und aktiviert, wobei dessen Nutzung nach dem Abschalten des vorhergehenden Bandabschnittes beginnt.