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1. 发明申请

WO2010042227A1 CIRCULAR GROOVE PRESSING MECHANISM AND METHOD FOR SPUTTERING TARGET MANUFACTURING 审中-公开
标题翻译：圆锥滚子压力机构及喷射目标制造方法
公开(公告)号：WO2010042227A1
公开(公告)日：2010-04-15
申请号：PCT/US2009/005572
申请日：2009-10-09
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , THEADO, Erich , SMATHERS, David, B.
发明人： IVANOV, Eugene, Y. , THEADO, Erich , SMATHERS, David, B.
IPC分类号： C23C14/34 , B21D17/02 , B21D13/02 , B21D22/02
CPC分类号： B21D17/02 , B21D13/02 , B21D22/02 , C23C14/3407
摘要： A method of making metal target blank (1) using circular groove pressing includes pressing a metal or metal alloy target blank (1) in a first circular grooved pressing die set (20A, 20B) into a first concentric corrugated shape while maintaining an original diameter of the target blank (1) to create concentric rings of shear deformation in the target blank (1). Forces are then applied to the concentric corrugated target (1) blank sufficient to substantially flatten the target blank with a flat die set (30A, 30B) while maintaining the original diameter of the target blank (1) to restore the target blank (1) to a substantially flat condition. The target blank (1) is pressed in a second circular grooved die set (40A, 40B) into a second concentric corrugated shape while maintaining the original diameter of the target blank (1), wherein the second die set (40A, 40B) has a groove pattern offset from a groove pattern of the first die set (20A, 20B) so as to create concentric rings of shear deformation in areas of the target blank which were not previously deformed. Forces are again applied to the concentric corrugated target blank (1) sufficient to substantially flatten the target blank (1) with a flat die set (30A, 30B) while maintaining the original diameter of the target blank (1) to restore the target blank to a substantially flat condition.
摘要翻译：使用圆形沟槽压制制造金属靶坯料（1）的方法包括将第一圆形槽压模组（20A，20B）中的金属或金属合金靶坯（1）压制成第一同心波纹形状，同时保持原始直径的目标坯料（1）以在目标坯料（1）中产生剪切变形的同心环。然后将力施加到同心的波纹状目标（1）坯料上，足以在保持目标坯料（1）的原始直径以恢复目标坯料（1）的情况下用平坦的模具组件（30A，30B）基本上平坦化目标坯料，达到基本平坦的状态。目标坯料（1）在第二圆形槽模具组件（40A，40B）中被压制成第二同心波纹形状，同时保持目标坯件（1）的原始直径，其中第二模具组件（40A，40B）具有凹槽图案从第一模具组（20A，20B）的凹槽图案偏移，以在目标坯料的未被变形的区域中产生剪切变形的同心环。力再次施加到同心的波纹状目标坯料（1）上，足以基本上用平模（30A，30B）平坦化目标坯料（1），同时保持目标坯料（1）的原始直径以恢复目标坯料达到基本平坦的状态。

2. 发明申请

WO2011102896A1 SPUTTER TARGET 审中-公开
标题翻译：射击目标
公开(公告)号：WO2011102896A1
公开(公告)日：2011-08-25
申请号：PCT/US2011/000285
申请日：2011-02-16
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , LEYBOVICH, Alexander , RIZER, John
发明人： IVANOV, Eugene, Y. , LEYBOVICH, Alexander , RIZER, John
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/3423 , H01J37/3426 , H01J37/3435 , Y10T29/49826
摘要： In one aspect of the invention, a sputter target is provided comprising a backing plate (40) comprising a front surface and a back surface; and a sputtering plate mounted on said backing plate, the sputtering plate comprising a sputtering surface and a back surface. At least one of the back surface of the sputtering plate, the front surface of the backing plate, or the back surface of the backing plate has at least one groove (30) that is shaped and sized to correspond to an observed region of higher sputtering of the sputtering plate relative to an adjacent area of the sputtering plate. An insert (50) is placed in the groove (s). The backing plate comprises a first material, the sputtering plate comprises a second material, and an insert comprises a third material. In yet another aspect of the sputter target, a method of controlling the electromagnetic properties of a sputter target is provided.
摘要翻译：在本发明的一个方面，提供一种溅射靶，其包括一个包括前表面和后表面的背板（40）以及安装在所述背板上的溅射板，所述溅射板包括溅射表面和背面。溅射板的后表面，背板的前表面或背板的后表面中的至少一个具有至少一个凹槽（30），其形状和尺寸被设计成对应于较高溅射的观察区域的溅射板相对于溅射板的相邻区域。插入件（50）放置在凹槽中。背板包括第一材料，溅射板包括第二材料，并且插入件包括第三材料。在溅射靶的另一方面，提供了一种控制溅射靶的电磁特性的方法。

3. 发明申请

WO2007103014A2 SPUTTERING TARGET FOR FORMING THE WIRING FILM MADE FROM MICROALLOYED ALUMINUM ALLOYS 审中-公开
标题翻译：用于形成来自微合金铝合金的导线的溅射靶
公开(公告)号：WO2007103014A2
公开(公告)日：2007-09-13
申请号：PCT/US2007/004879
申请日：2007-02-26
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , YUAN, Yongwen , SMATHERS, David, B. , JORDAN, Ronald, G.
发明人： IVANOV, Eugene, Y. , YUAN, Yongwen , SMATHERS, David, B. , JORDAN, Ronald, G.
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C23C14/0617 , H01J37/3255 , H01J37/3426 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a sputtering target comprising aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm and preferably in the range of 0.1 to 50 ppm and more preferably from 0.1 to 10 ppm weight which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.
摘要翻译：本发明提供一种包含铝和一种或多种包括Ni，Co，Ti，V，Cr，Mn，Mo，Nb，Ta，W和稀土金属（REM）的合金元素的溅射靶。向纯铝和铝合金靶添加非常少量的合金元素可以通过影响目标的再结晶过程来提高沉积布线膜的均匀性。合金元素含量的范围为0.01〜100ppm，优选为0.1〜50ppm，更优选为0.1〜10ppm，足以防止纯铝和铝合金如30ppm Si合金的动态再结晶。添加少量合金元素可提高纯铝和铝合金薄膜的热稳定性和电迁移率，同时保持其低电阻率和良好的可蚀刻性。本发明还提供一种制造微合金铝和铝合金溅射靶的方法。

4. 发明申请

WO2007102988A2 ELECTRONIC DEVICE, METHOD OF MANUFACTURE OF SAME AND SPUTTERING TARGET 审中-公开
标题翻译：电子装置，其制造方法及溅射靶材
公开(公告)号：WO2007102988A2
公开(公告)日：2007-09-13
申请号：PCT/US2007/004490
申请日：2007-02-21
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , WIEMELS, Timothy, K.
发明人： IVANOV, Eugene, Y. , WIEMELS, Timothy, K.
CPC分类号： H01L31/1884 , C22C21/00 , C23C14/3414 , G02F2001/136295 , H01L31/022475 , H01L31/022483 , Y02E10/50 , Y10T29/49002 , Y10T428/265
摘要： An electronic device having a first electrode including a metal oxide and a second electrode including an aluminum alloy film and manufacturing technology therefor. The second electrode is directly contacted and electrically connected to the first electrode, wherein, in the contact interface between the aluminum alloy film and said first electrode, at least a part of alloy components constituting the aluminum alloy film exist as a precipitate extending across the contact interface to contact the metal oxide to the aluminum alloy film by the precipitate. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows for elimination of a barrier metal in such an electronic device.
摘要翻译：具有包含金属氧化物的第一电极和包含铝合金膜的第二电极及其制造技术的电子器件。第二电极与第一电极直接接触并电连接，其中，在铝合金膜和所述第一电极之间的接触界面中，构成铝合金膜的合金成分的至少一部分作为跨过接触件延伸的沉淀物而存在通过沉淀物使金属氧化物与铝合金膜接触。这种结构使得铝合金膜和由金属氧化物构成的电极之间能够直接接触，并且允许消除这种电子器件中的阻挡金属。

5. 发明申请

WO2011162813A1 BIMETALLIC TARGET 审中-公开
标题翻译：双目标
公开(公告)号：WO2011162813A1
公开(公告)日：2011-12-29
申请号：PCT/US2011/001115
申请日：2011-06-23
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , DEL-RIO, Eduardo
发明人： IVANOV, Eugene, Y. , DEL-RIO, Eduardo
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3407 , C23C14/14 , C23C14/3414 , H01J37/342 , H01J37/3429
摘要： A bimetallic rotary target formed of a first metal and a second metal for use in a sputtering apparatus. The rotary target including a target tube having a plurality of grooves or apertures formed therein. An insert being positionable within each of the grooves or apertures. The inserts including a locking mechanism that protrude from the side surface of the insert, wherein the locking mechanism is configured to contact the surface defining the grooves or apertures to secure the inserts within the target tube. Subsequently HIPing, C1Ping, electron beam welding, ultrasonic welding, mechanical fixture fit, or sintering integrally attaches the inserts to the target tube.
摘要翻译：由用于溅射装置的第一金属和第二金属形成的双金属旋转靶。旋转靶包括其中形成有多个凹槽或孔的目标管。插入件可定位在每个凹槽或孔内。所述插入件包括从所述插入件的侧表面突出的锁定机构，其中所述锁定机构构造成接触限定所述凹槽或孔的表面以将所述插入物固定在所述目标管内。随后，HIPing，C1Ping，电子束焊接，超声波焊接，机械固定配合或烧结将插入件整体附接到目标管。

6. 发明申请

WO2008033192A1 SPUTTERING TARGET ASSEMBLY AND METHOD OF MAKING SAME 审中-公开
标题翻译：溅射目标组件及其制造方法
公开(公告)号：WO2008033192A1
公开(公告)日：2008-03-20
申请号：PCT/US2007/017598
申请日：2007-08-08
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , THEADO, Erich
发明人： IVANOV, Eugene, Y. , THEADO, Erich
IPC分类号： C23C14/34 , B23K20/12
CPC分类号： C23C14/3407 , B23K20/122 , B23K20/129 , B23K2203/08 , B23K2203/10 , B23K2203/12 , B23K2203/14 , B23K2203/18 , B23K2203/26
摘要： A method for producing a sputtering target assembly bonded to a backing plate. The method includes bonding a target (100) to a high strength backing plate (110) and further creating a vacuum seal between the target and the backing plate using friction stir welding processes.
摘要翻译：一种制造结合到背板的溅射靶组件的方法。该方法包括将目标物（100）粘合到高强度背板（110）上，并使用摩擦搅拌焊接工艺进一步在靶材和背板之间产生真空密封。

7. 发明申请

WO2004024972A3 SYSTEMS AND METHODS FOR A TARGET AND BACKING PLATE ASSEMBLY 审中-公开
公开(公告)号：WO2004024972A3
公开(公告)日：2004-03-25
申请号：PCT/US2003/026465
申请日：2003-08-26
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y.
发明人： IVANOV, Eugene, Y.
IPC分类号： C23C14/34
摘要： A target (1) and backing plate (10) assembly and method of making the same. The target (1) and backing plate (10) assembly provides a mechanical interlock between the target (1) and backing plate (10) in addition to diffusion bonding between dissimilar materials comprising the target (1) and backing plate (10). An interlayer may also be used between the target (1) and backing plate (10). A plurality of ridges, or other salient surface features (3,4) on one of the target (1) and backing plate (10) are joined to corresponding members or channels (13, 14) on the other of the target and backing plate. The dissimilar materials of the target (1) and backing plate (10) fill negative angled cavities(13, 14) formed by the plurality of ridges (3, 4) and corresponding channels or members (13, 14) of the target (1) and backing plate (10) to accommodate the diffusion bonded dissimilar materials. A target (1) and backing plate (10) assembly with increased strength results.

8. 发明申请

WO2003106733A1 TARGET AND METHOD OF DIFFUSION BONDING TARGET TO BACKING PLATE 审中-公开
标题翻译：扩散接头目标和方法对背板的影响
公开(公告)号：WO2003106733A1
公开(公告)日：2003-12-24
申请号：PCT/US2003/018440
申请日：2003-06-11
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , CONARD, Harry, W.
发明人： IVANOV, Eugene, Y. , CONARD, Harry, W.
IPC分类号： C23C14/34
CPC分类号： H01J37/3435 , B23K20/021 , C23C14/3407 , C23C14/3414
摘要： Sputter target assemblies (10) and methods of making the sputter target assemblies in which the HIP processes conventionally used are minimized, or eliminated, while producing higher yields of sputter target assemblies in less time. In one instance the sputter target assemblies include a single, or multiple, layered interlayer (14, 16) between the target and backing plate (18) in order to achieve intermetallic diffusion bonds between adjacent layers during a single HIP process. A mechanical interlock between the target (12) and backing plate is also achieved preferably during a single HIP process. In another instance, the target and backing plate are welded directly together by electron beam welding, and the interlayer and HIP process are omitted. In either case, the process for making the sputter target assembly is shortened, rendering it less expensive and subject to less failures, while achieving assemblies having robust strength.
摘要翻译：溅射靶组件（10）和制造其中常规使用的HIP工艺的溅射靶组件的方法被最小化或消除，同时在较短时间内产生更高产量的溅射靶组件。在一个实例中，溅射靶组件包括在靶材和背板（18）之间的单层或多层分层的中间层（14,16），以便在单个HIP工艺期间实现相邻层之间的金属间扩散接合。目标（12）和背板之间的机械互锁优选地也是在单个HIP过程期间实现的。在另一种情况下，目标板和背板通过电子束焊接直接焊接在一起，并且省略了中间层和HIP工艺。在任一种情况下，制造溅射靶组件的工艺被缩短，使得它更便宜并且经受更少的故障，同时实现具有强大强度的组件。

9. 发明申请

WO2008030368A1 COPPER SPUTTERING TARGET WITH FINE GRAIN SIZE AND HIGH ELECTROMIGRATION RESISTANCE AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：具有细粒度和高电阻率的铜喷溅目标及其制造方法
公开(公告)号：WO2008030368A1
公开(公告)日：2008-03-13
申请号：PCT/US2007/018977
申请日：2007-08-29
申请人： TOSOH SMD, INC. , YUAN, Yongwen , BAILEY, Robert, S. , IVANOV, Eugene, Y. , SMATHERS, David, B.
发明人： YUAN, Yongwen , BAILEY, Robert, S. , IVANOV, Eugene, Y. , SMATHERS, David, B.
IPC分类号： C22C9/00 , C23C14/34
CPC分类号： C23C14/3414 , C22C1/02 , C22C9/00
摘要： The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt% ~ 10 wt% alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt% aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets.
摘要翻译：本发明通常提供一种溅射靶，其包含铜和总共0.001重量％〜10重量％的选自Al，Ag，Co，Cr，Ir，Fe，Mo，Ti，Pd，Ru的合金元素或元素，Ta，Sc，Hf，Zr，V，Nb，Y和稀土金属。含有0.5重量％铝的示例性铜溅射具有超细晶粒尺寸，高热稳定性和高电迁移性，并且能够形成具有期望的膜均匀性，优异的电迁移和氧化性以及对电介质中间层的高粘附性的膜。含有12ppm银的示例性铜溅射具有超细晶粒尺寸。本发明还提供了制造铜溅射靶的方法。

10. 发明申请

WO2006093953A1 SPUTTERING TARGET WITH AN INSULATING RING AND A GAP BETWEEN THE RING AND THE TARGET 审中-公开
标题翻译：具有绝缘环的喷射目标和环与目标之间的差距
公开(公告)号：WO2006093953A1
公开(公告)日：2006-09-08
申请号：PCT/US2006/007062
申请日：2006-02-28
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , THEADO, Erich , CONARD, Harry, W. , POOLE, John, E.
发明人： IVANOV, Eugene, Y. , THEADO, Erich , CONARD, Harry, W. , POOLE, John, E.
IPC分类号： H01J37/34 , C23C14/34
CPC分类号： H01J37/34 , H01J37/3414
摘要： A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target.
摘要翻译：用于等离子体气相沉积（PVD）的溅射等离子体反应器，其具有PVD靶，陶瓷环和PVD室壁之间改进的界面。反应器包括PVD室壁和PVD靶，其中与PVD室壁结合的目标物形成真空室，并且其中至少面对真空室的靶的部分由待溅射的材料组成。反应器还包括定位在靶和PVD室壁之间的绝缘陶瓷环。设置第一O形环以在靶和绝缘环之间建立真空密封，并且提供第二O形环以在绝缘环和PVD室壁之间建立真空密封。至少一个间隔件位于靶和绝缘环之间，以保持绝缘环和靶之间的间隙G. 间隔件由合适的低摩擦系数材料制成，并且可以抑制否则沿陶瓷环和靶之间的界面发生的黑色标记，划痕等。

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