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1. 发明专利

JPH10217103A DRESSER OF CLOTH FOR POLISHING AND ITS MANUFACTURE 失效
公开(公告)号：JPH10217103A
公开(公告)日：1998-08-18
申请号：JP3987097
申请日：1997-02-07
申请人： EBARA CORP , TOSHIBA CORP
发明人： NAGASAKA HIROSHI , SUMIYA MOMOKO , TATEISHI KUNIO , KOGURE NAOAKI , YODA TAKASHI
IPC分类号： B24B53/017 , B24B53/12 , B24D18/00 , H01L21/304 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To prevent falling of diamond particulates during polishing by forming a large number of peaked projected parts on a surface of a metal base body and constituting at least the surface where the projected parts are formed of the metal base body to be covered with an abrasion resistant hard film. SOLUTION: A large number of projected parts 3 are formed on a surface 2 of a metal base body 1 by machining, and the surface 2 where the projected parts 3 are formed is covered with an abrasion resistant hard film 4. As a materia of the abrasion resistant hard film 4, fiber metal nitride to be represented by titanium nitride, nitride ceramics to be represented by boron nitride and carbon nitride, carbide ceramics to be represented by chrome carbide and boron carbide, ceramics of diamond-like carbon, etc., or the like are optimum. Composite ceramics, etc., composing more than two kinds of ceramics are also optimum for improvement of film characteristics related with anticorrosion and abrasion resistance.

2. 发明专利

JPH08126956A POLISHING METHOD AND ITS DEVICE 失效
公开(公告)号：JPH08126956A
公开(公告)日：1996-05-21
申请号：JP25672195
申请日：1995-09-08
申请人： EBARA CORP
发明人： KIMURA NORIO , KAWAMOTO TAKAYOSHI , ISHII YU , AOKI KATSUYUKI , TATEISHI KUNIO , YASUDA HOZUMI , NAMIKI KEISUKE
IPC分类号： B24B37/04 , B24B37/30 , H01L21/304
摘要： PURPOSE: To provide the polishing method and its device, which can uniformly polish the polishing surface of a polishing object by avoiding ununiformity in wear or slurry distribution over an abrasive cloth followed by the use of the abrasive cloth. CONSTITUTION: In the polishing method which polishes the surface of a wafer 6 into a flat and mirror shape by pressing the wafer 6 interposed between a turn-table and a top ring 3 with specified force, the specified amount of water is fed to the back surface of the wafer 6. The wafer 6 to the back surface of which the specified amount of liquid is fed is held by the top ring 3 provided with a hold surface formed in a concave spherical surface holding the wafer 6. And the polishing surface of the water 6 held by the top ring 3 is faced to an abrasive cloth 23 over the turn-table 20, so that the wafer is pressed and polished.

3. 发明专利

JPH07101714A PRODUCTION OF SILICON DIOXIDE COATING FILM AND DEVICE THEREFOR 失效
公开(公告)号：JPH07101714A
公开(公告)日：1995-04-18
申请号：JP27491093
申请日：1993-10-06
申请人： EBARA CORP
发明人： KOGURE NAOAKI , SAITO HARUMITSU , KAWAMURA SATOSHI , TATEISHI KUNIO
IPC分类号： C01B33/12 , C23C18/00 , H01L21/316
摘要： PURPOSE:To prevent decrease in the film forming rate and to realize efficient treatment while decreasing local precipitation of silicon dioxide in a liquid. CONSTITUTION:A base body 20 is brought into contact with the treating liquid 11 containing an aq. soln. of silicofluoride with a supersaturation state of silicon dioxide to precipitate a silicon dioxide film on the surface of the base body. The base body 20 is brought into contact with the treating liquid 11 to precipitate a silicon dioxide film in a treating tank 12. In this method, an activating agent 16 necessary to produce the supersaturation state of silicon dioxide is added to an aq. soln. of silicofluoride to produce a controlled treating liquid 11' in an independent system from the treating tank 12 in the outside of the tank 12. Then the controlled treating liquid 11' is supplied to the treating tank 12.

4. 发明专利

JPH07144910A PRODUCTION OF SILICON DIOXIDE COATING FILM AND DEVICE THEREFOR 失效
公开(公告)号：JPH07144910A
公开(公告)日：1995-06-06
申请号：JP31432393
申请日：1993-11-19
申请人： EBARA CORP
发明人： KOGURE NAOAKI , KAWAMURA SATOSHI , SAITO HARUMITSU , TATEISHI KUNIO
IPC分类号： C01B33/12 , C23C18/00 , H01L21/316
摘要： PURPOSE:To grasp an operating state, to stabilize operation and to improve quality by measuring the properties of a treating liq. in real-time and judging the number of particles contained in the treating liq. and the film forming performance of the treating liq. CONSTITUTION:When a substrate is brought into contact with a treating liq. made of an aq. hydrosilicofluoric acid soln. contg. silicon dioxide in a supersatd. state to form a silicon dioxide coating film on the surface of the substrate, the concn. of particles in the treating liq. and/or the film forming performance of the treating liq. is detected by measuring the light absorption spectrum of the treating liq.

5. 发明专利

JPS62190278A METHOD FOR BONDING NAMEPLATE TO SURFACE OF ARTICLE OF CAST METAL 失效
公开(公告)号：JPS62190278A
公开(公告)日：1987-08-20
申请号：JP3064486
申请日：1986-02-17
申请人： EBARA CORP , EBARA RES CO LTD
发明人： KOGURE NAOAKI , TATEISHI KUNIO
IPC分类号： C09J5/00 , G09F7/12
摘要： PURPOSE:To bond a nameplate to surface of an article of cast metal firmly for a long period without using a screw and a rivet, by selecting a pressure- sensitive adhesive depending upon a material of cushioning material, limiting its thickness and properties and laying the adhesive between the nameplate and the article of cast metal. CONSTITUTION:One of cushioning materials having 0.15-1.2mm thickness in the case of cloth or 0.8-2mm thickness in the case of expanded polyester is selected and a pressure-sensitive adhesive (having 10 -10 ps viscosity and 1.5-9.0kgf/cm bond strength) is selected from acrylic rubber, nitrile rubber, urethane rubber, silicone rubber and butyl rubber depending upon material of the cushioning material to bond the cushioning material to a nameplate. Surface of the cushioning material is bonded to surface of an article of cast metal by laying the pressure-sensitive adhesive in 10-50mu thickness between them. In the operation, compression deformation resistance value of the cushioning material and the pressure-sensitive adhesive is 5X10 -5X10 mm/(kgf/cm ) in the case when the cushioning material is cloth and 1.5X10 -1.5 mm/(kgf/cm ) in the case when the cushioning material is except the cloth.

6. 发明专利

JPH07165411A PRODUCTION OF SILICON DIOXIDE FILM AND APPARATUS THEREFOR 失效
公开(公告)号：JPH07165411A
公开(公告)日：1995-06-27
申请号：JP34182493
申请日：1993-12-13
申请人： EBARA CORP
发明人： KOGURE NAOAKI , KAWAMURA SATOSHI , HORIE KUNIAKI , TATEISHI KUNIO
IPC分类号： C01B33/12 , C23C18/00 , H01L21/316
摘要： PURPOSE:To prevent the film-forming rate from deteriorating due to the deposition of silicon dioxide by making a treating liquid in which a substrate is immersed flow in a treating tank and arranging a part for adding an activator near the upstream side of the substrate. CONSTITUTION:This method for producing a silicon dioxide film is to use the following means in a method for bringing a treating liquid containing an aqueous solution of hydrosilicofluoric acid in which silicon oxide is converted into a supersaturated state into contact with a substrate 12 and depositing a silicon dioxide film on the surface of the substrate 12: That is, the treating liquid 2 is made to flow through a treating tank 3 with a circulating device 15 and further brought into contact with the substrate 12. Furthermore, an activator (e.g. aluminum) 11 is added to a site 5 in the vicinity of the upstream side of the substrate 12 so as not to interpose a pump, a filter, etc., in a flow passage leading to the site 5 for adding the activator on the upstream side of the substrate 12.

7. 发明专利

JPH07144912A PRODUCTION OF SILICON DIOXIDE COATING FILM AND DEVICE THEREFOR 失效
公开(公告)号：JPH07144912A
公开(公告)日：1995-06-06
申请号：JP31432593
申请日：1993-11-19
申请人： EBARA CORP
发明人： KOGURE NAOAKI , KAWAMURA SATOSHI , HORIE KUNIAKI , TATEISHI KUNIO
IPC分类号： C01B33/12 , C23C18/00 , H01L21/316
摘要： PURPOSE:To dissolve problems in maintenance and operation control by passing a part or the whole of a processing soln. contg. an aq. H2SiF6 soln. supersaturated with SiO2 through a centrifugal settling process to centrifugally settle the particles contained in the soln. CONSTITUTION:An activator 3 such as an Al sheet is dipped in an aq. H2SiF6 soln. filled in a processing soln. regulating tank 2 and dissolved to a specified concn. to prepare the regulated processing soln. supersaturated with SiO2. A pump 7 is operated to supply the soln. to a centrifugal settling device 5, the device 5 is rotated to separate and remove the SiO2 particles suspended in the soln., the supernatant with the particle concn. reduced to about 1/10 to 1/100 is supplied to a treating tank 1, and a film is formed on the base material 11 dipped in the tank 1. Meanwhile, the processing soln. overflowing the tank 1 is readjusted in the tank 2 and recycled. The process is repeated to form a coating film on the base material 11 in specified thickness.

8. 发明专利

JPH09168962A DRESSING METHOD AND DEVICE FOR ABRASIVE CLOTH IN POLISHING DEVICE 失效
公开(公告)号：JPH09168962A
公开(公告)日：1997-06-30
申请号：JP29729296
申请日：1996-10-18
申请人： EBARA CORP
发明人： KIMURA NORIO , AOKI KATSUYUKI , TATEISHI KUNIO , YASUDA HOZUMI
IPC分类号： B24B53/017 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To provide a dressing method and a dressing device for an abrasive cloth in a polishing device, in which the moderate surface roughness of an abrasive cloth surface is secured, the decrease of the polishing amount per unit time is small, and the abrasive cloth surface can be linearly dressed by dressing. SOLUTION: In a dressing method for an abrasive cloth in a polishing device, for dressing the abrasive cloth surface by bringing the lower surface of a rotating dresser into contact with the abrasive cloth surface of a rotating surface plate of a polishing device for bringing a device pattern formed on the upper surface of a semiconductor wafer into contact with the upper surface of an abrasive cloth of the rotating surface plate, polishing it, and making it flat, a dresser 10 has a structure in which a SiC band 12 is provided on the lower surface of a dresser main body 11 and performs dressing by bringing the SiC band 12 of the dresser 10 into contact with the abrasive cloth surface.

9. 发明专利

JPH09168961A DRESSING METHOD AND DEVICE FOR ABRASIVE CLOTH IN POLISHING DEVICE 失效
公开(公告)号：JPH09168961A
公开(公告)日：1997-06-30
申请号：JP29442396
申请日：1996-10-16
申请人： EBARA CORP
发明人： KIMURA NORIO , AOKI KATSUYUKI , TATEISHI KUNIO , YASUDA HOZUMI
IPC分类号： B24B53/017 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To provide a dressing method and a dressing device for an abrasive cloth in a polishing device, in which the moderate surface roughness of the abrasive cloth surface is secured and the abrasive cloth surface is linearly dressed by dressing. SOLUTION: In a dressing method for an abrasive cloth in a polishing device, the abrasive cloth surface is dressed by bringing the lower surface of a rotating dresser into contact with the abrasive cloth surface of a rotating surface plate of a polishing device for bringing a device pattern formed on the upper surface of a semiconductor wafer into contact with the abrasive cloth surface of the rotating surface plate, grinding it, and making it flat. The abrasive cloth stuck on the upper surface of the surface plate is a foamed polyurethane abrasive cloth, a dresser 10 has a structure in which a diamond electrodeposition ring 13 formed by electro depositing fine diamond grains on the lower surface of a dresser main body 11 by the prescribed width, and the abrasive cloth is dressed by bringing the diamond electrodeposition ring 13 on the lower surface of the dresser 10 into contact with the foamed polyurethane abrasive cloth surface.

10. 发明专利

JPH07165412A PRODUCTION OF SILICON DIOXIDE FILM 失效
公开(公告)号：JPH07165412A
公开(公告)日：1995-06-27
申请号：JP34182593
申请日：1993-12-13
申请人： EBARA CORP
发明人： KOGURE NAOAKI , KAWAMURA SATOSHI , TSUJIMURA MANABU , TATEISHI KUNIO
IPC分类号： C01B33/12 , C23C18/00 , H01L21/316
摘要： PURPOSE:To efficiently form a sound silicon dioxide film containing a small amount of sticking particles. CONSTITUTION:This method for producing a silicon dioxide film is to add aluminum to an aqueous solution containing silicon dioxide in a saturated state (a stock solution), produce an aqueous solution of hydrosilicofluoric acid (a treating liquid) in which silicon dioxide is converted into a supersaturated state, bring the resultant treating liquid into contact with a substrate and deposit the silicon dioxide film thereon. The amount of the added aluminum based on 1l stock solution is 0.05-0.4mol and the temperature obtained by subtracting the temperature for producing the treating liquid from the temperature of the treating liquid in producing the silicon dioxide film (a rise in temperature of the treating liquid) is 0-25 deg.C. The relationship between the amount of the added aluminum and the rise in temperature of the treating liquid is kept within a range so as to provide a prescribed value or above of the deposition rate of the silicon dioxide film and regulate the number of sticking particles of the silicon dioxide having >=0.2mum particle diameter to a prescribed value or below.

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