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1. 发明专利

JP2004341986A Information storage system and information storage service method 审中-公开
公开(公告)号：JP2004341986A
公开(公告)日：2004-12-02
申请号：JP2003140093
申请日：2003-05-19
申请人： Toshiba Corp , Toshiba Tec Corp , 東芝テック株式会社 , 株式会社東芝
发明人： YAMAGUCHI HIROSHI , YAMAMOTO HIROSHI , TAKARA SHUSAKU , SAITO TAKASHI , AZUMA HIROSHI , SATO TERUYA
IPC分类号： G06Q50/10 , G06F3/12 , G06Q50/00 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To enhance the convenience and security in an information storage system and an information storage service method. SOLUTION: The information storage system provided in a remote storage server on a network with a data storage part for individual users for storing data to be stored which has been transmitted from a transmission source user to a destination user, has an accommodating institution side system arranged on the side of an accommodating institution which accommodates the destination user. The accommodating institution side system comprises an accommodation managing part which manages whether the destination user is accommodated in the accommodating institution. The remote storage server comprises a storage managing part for managing the data storage part for individual users while correlating the data storage part with the destination user. The remote storage server has a user name issuing part which issues a limited-time user name which is valid for a valid period corresponding to a period during which the accommodating institution accommodates the destination user and has the function of uniquely designating the destination user at least in the accommodating institution side system. COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JPH11166481A DISCHARGE REGULATOR OF CONDENSATE PUMP 失效
公开(公告)号：JPH11166481A
公开(公告)日：1999-06-22
申请号：JP33147597
申请日：1997-12-02
申请人： TOSHIBA CORP
发明人： YAMAGUCHI HIROSHI
IPC分类号： G21D3/04 , F04B49/00
摘要： PROBLEM TO BE SOLVED: To provide the discharge regulator of a codensate pump which is used in a condensing and water-supplying device of a plant using commonly the minimum flow bypass line of high pressure condensate pump and nuclear reactor water-supplying pump and which protects the high pressure condensate pump through regulation of its/their rate of flow in case there is a difference in the Q-H characteristics between a plurality of high pressure condensate pumps. SOLUTION: The discharge regulator of a condensate pump is configured so that a plurality of high pressure condensate pumps 4a and 4b are in parallel connection for boosting the condensate for water heaters 5 and 8 and water- supplying pumps 6 and 7 of a nuclear power plant, wherein circulative pipings 25a and 25b in which circulation stopping valves 22a and 22b, circulation check valves 23a and 23b, and orifices 24a and 24b are interposed in series arrangement are connected between the discharge side and suction side of each high pressure condensate pump 4a/4b.

3. 发明专利

JPH09306959A SEMICONDUCTOR THIN FILM IMPURITY CONCENTRATOR AND ANALYSIS THEREOF 失效
公开(公告)号：JPH09306959A
公开(公告)日：1997-11-28
申请号：JP23930796
申请日：1996-09-10
申请人： TOSHIBA CORP
发明人： MATSUNAGA HIDEKI , YAMAGUCHI HIROSHI , DOI SEIZO , TOMITA MITSUHIRO , YOSHIDA TAKASHI , SUZUKI ISAO , MORITA MASAAKI
IPC分类号： G01N23/223 , G01N1/36 , G01N23/225 , G01N23/227 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To concentrate impurity in a semiconductor thin film without dissolving this sample of semiconductor thin film, and analyze it quickly and easily at high sensitivity. SOLUTION: A concentrator comprises a DC voltage feed means 1 for applying a first and a second different potentials to a first and a second terminals 13 and 17, a closed vessel 3 for shielding a semiconductor thin film sample S from outside, a first electrode 5 which is electrically connected to the first terminal 13 and holds one surface of the sample S in the vessel 3 and a second electrode 7 which is disposed near or on the other surface of the sample S in the vessel 3 and has a sharp edge part near the other surface of the sample S.

4. 发明专利

JPH09250993A SECONDARY ION MASS SPECTROGRAPH 失效
公开(公告)号：JPH09250993A
公开(公告)日：1997-09-22
申请号：JP6060996
申请日：1996-03-18
申请人： TOSHIBA CORP
发明人： TOMITA MITSUHIRO , YAMAGUCHI HIROSHI , TAKAKUWA CHIE , YOSHIKI MASAHIKO , TAKAHASHI MAMORU , SUZUKI TAKESHI , TANAKA AKIRA
IPC分类号： G01N23/225 , H01J37/20 , H01J49/26
摘要： PROBLEM TO BE SOLVED: To provide a secondary ion mass spectrograph which can microanalyze light element. SOLUTION: The secondary ion mass spectrograph comprises ion generating means 10 for emitting a primary ion beam to the part of a sample, analyzing means 24 for analyzing secondary ion sputter excited from the surface with the primary ion beam, and electron generating means 14 for generating electron for neutralizing charge generated on the surface of the sample by the generation of the secondary ion beam, wherein infrared beam generated from heating means 34 is emitted to the sample S, mass analysis is made in the state of no background due to the residual element by emitting the primary ion beam after the remaining element adhered to the surface of the sample S is previously vaporized by the primary ion beam, and hence the light element can be microanalyzed.

5. 发明专利

JPH0982771A METHOD AND APPARATUS FOR EVALUATING SEMICONDUCTOR MATERIAL 失效
公开(公告)号：JPH0982771A
公开(公告)日：1997-03-28
申请号：JP24024795
申请日：1995-09-19
申请人： TOSHIBA CORP
发明人： YAMAGUCHI HIROSHI , MATSUNAGA HIDEKI , TAKENO SHIRO , DOI SEIZO
IPC分类号： G01R31/302 , G01N21/66 , G01N21/88 , G01N21/94 , G01N21/956 , G01N37/00 , G01Q60/18 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To make it possible to detect the luminescence due caused by dielectric breakdown, leakage or other defect in the infinitesimal area of a semiconductor or an IC material with the accuracy of 1μm or less by detecting a near field light generated from an electrified semiconductor material. SOLUTION: A semiconductor material 1 is electrified, and a near field light generated from the electrified material 1 is detected. For example, the surface of a sample 1 is scanned while vibrating a probe 7 in the mode that a high-frequency vibration having small amplitude is superposed on a low-frequency vibration having an amplitude equivalent to the light wavelength in the state that the sample 1 is electrified. When the end of the probe 7 is brought into contact with the surface of the sample 1, the amplitude or frequency of the vibration of the probe 7 is varied, and hence the change of the high-frequency vibration component is detected by displacement detecting mechanism 13 to 15, and the height regulation of the Z-axis of the sample 1 is fed back. The light captured by the probe 7 is divided to be detected corresponding to the low-frequency vibration of the probe 7, and the precise distribution of the luminescence from the infinitesimal position is obtained.

6. 发明专利

JPH08247405A CONDENSING AND WATER-FEEDING DEVICE FOR POWER GENERATING PLANT 失效
公开(公告)号：JPH08247405A
公开(公告)日：1996-09-27
申请号：JP4962695
申请日：1995-03-09
申请人： TOSHIBA CORP
发明人： SHIBAYAMA TAKASHI , YAMAGUCHI HIROSHI
IPC分类号： F22D5/32 , F22D5/34 , G21D1/02
摘要： PURPOSE: To increase the flexibility of operation of a power generating plant by a method wherein an auxiliary minimum flow pipe, branched from the half- way of a minimum flow pipe connecting the primary hot well of a condenser to a reactor feed pump and connected to a secondary hot well for the condenser, and another minimum flow pipe at the downstream of a branching point are provided respectively with a stop valve. CONSTITUTION: An auxiliary minimum flow pipe 16, connected to the secondary hot well 1b of a condenser, is added from the halfway of a minimum flow pipe 12 connecting the primary hot well 1a of the condenser and turbine-driven reactor feed pumps 8a, 8b. The minimum flow pipe 12 and the auxiliary minimum flow pipe 16 are provided respectively with stop valves 18, 19. An auxiliary minimum flow pipe 17, a minimum flow stop valve 20 and an auxiliary minimum flow stop valve 21 are installed with respect to a motor driven reactor feed pump 9 in the same manner. When the minimum flow stop valves 18, 20 and the auxiliary minimum flow stop valves 19, 21 are permitted to be controlled through remote control, all of the switching of the pumps can be effected from a central control room.

7. 发明专利

JPH0888179A METHOD AND EQUIPMENT FOR FORMATION, WORKING, AND EVALUATION ANALYSIS OF SEMICONDUCTOR MATERIAL 失效
公开(公告)号：JPH0888179A
公开(公告)日：1996-04-02
申请号：JP24851594
申请日：1994-09-16
申请人： TOSHIBA CORP
发明人： YAMAGUCHI HIROSHI , SASAKI HIDEYUKI , YOSHIKI MASAHIKO , TAKENAKA MIYUKI , HONMA YOSHINORI
IPC分类号： G01N37/00 , G01N33/00 , G01Q30/02 , G01Q60/10 , G01Q80/00 , H01L21/02 , H01L21/203 , H01L21/205 , H01L21/66
摘要： PURPOSE: To precisely attach single atoms or molecules on arbitrary position of the surface of solid material, by irradiating, with light, atoms or melecules to be moved, out of atoms or molecules which exist on a probe and the surface of specimen solid, and by selectively relieving or moving the atoms or molecules, with a lower voltage. CONSTITUTION: A carbon plate or a graphite plate is used as the source of carbon 2 to be attached, and moved under a probe 5. It is made to approach the plate, and a negative bias voltage is applied to the probe 5. The carbon 2 atoms are ionized, relieved, and attached on the tip of the probe 5. A tungsten substrate 1 is moved under the the probe 5 on which the carbon 2 atoms are attached. The probe 5 is made to approach the tungsten substrate 1, and the distance is kept to be about 2nm. The carbon 2 attached on the probe 2 is irradiated with ultraviolet rays capable of exciting the oscillation of Si-C bonds. A positive bias voltage is applied to the probe 5 and gradually increased, and the carbon 2 is moved on the tungsten substrate 1.

8. 发明专利

JPH0886724A IMPURITY ANALYZER 失效
公开(公告)号：JPH0886724A
公开(公告)日：1996-04-02
申请号：JP22046694
申请日：1994-09-14
申请人： TOSHIBA CORP
发明人： YOSHIKI MASAHIKO , YAMAGUCHI HIROSHI , SASAKI HIDEYUKI , TAKENAKA MIYUKI
IPC分类号： G01N23/223 , G01N1/32
摘要： PURPOSE: To provide an impurity analyzer by which impurity can be speedily and easily analyzed while having accurate quantitative performance and high detecting sensitivity. CONSTITUTION: An impurity analyzer is provided with selective etching means 1a, 5 and 6 to deposit and enrich impurity in a sample 2 on a surface of the sample by selectively etching a main component of the sample 2 and irradiation detecting means 1b, 12 and 9 to detect intensity of fluorescence X-rays generated by the irradiation of the exciting light at a critical angle or less of total reflection to the surface of the sample 2 on which etching is performed by these selective etching means 1a, 5 and 6.

9. 发明专利

JPH0817809A METHOD AND DEVICE FOR ETCHING SILICON OR SILICON OXIDE AND METHOD AND DEVICE FOR PREPARING SAMPLE FOR ANALYZING IMPURITY 失效
公开(公告)号：JPH0817809A
公开(公告)日：1996-01-19
申请号：JP15075994
申请日：1994-07-01
申请人： TOSHIBA CORP
发明人： SASAKI HIDEYUKI , TAKENAKA MIYUKI , YOSHIKI MASAHIKO , YAMAGUCHI HIROSHI
IPC分类号： C01B33/02 , C01B7/19 , G01N1/28 , H01L21/306 , H01L21/308
摘要： PURPOSE:To obtain a method for etching silicon without causing a large amount of industrial waste and environmental contamination by performing etching and collecting by generating silicofluoride hydrogen acid from silicon or silicon oxide using hydrofluoric acid and reproducing and collecting hydrofluoric acid by cracking silicofluoride hydrogen acid by applying plasma or high-energy light under oxidation atmosphere along with water. CONSTITUTION:The surface of a silicon wafer 1 is oxidized and converted to silicofluoride hydrogen acid for dissolution by hydrofluoric acid gas supplied from a hydrofluoric acid solution 9, thus obtaining liquid silicofluoride hydrogen acid. The liquid silicofluoride hydrogen acid is decomposed along with water by plasma decomposition to react with steam, thus generating silicon dioxide solid and silicofluoride hydrofluoric gas. Hydrogen fluoride generated by decomposition, non-decomposed silicofluoride hydrogen acid, and silicon tetrafluoride are liquefied into solution along with steam. A solution containing hydrogen fluoride and silicofluoric hydrogen acid is accumulated in a pool 16, thus breaking an etching chamber 3 and a second condenser 6. A solution overflowed from the pool 16 is added to hydrogen fluoride solution in the etching chamber 3, becoming a supply source of hydrogen fluoride for etching a wafer.

10. 发明专利

JPH0694629A INSPECTING APPARATUS FOR CRYSTAL DEFECT 失效
公开(公告)号：JPH0694629A
公开(公告)日：1994-04-08
申请号：JP24607792
申请日：1992-09-16
申请人： TOSHIBA CORP
发明人： YAMAGUCHI HIROSHI , SEKIGUCHI SHINGO , NISHIKAWA MASAMITSU , NOZAWA MASAHITO
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956
摘要： PURPOSE:To enable measurement of a crystal defect with a high throughput by providing a photosensor having a light-sensing surface being perpendicular to the direction of bending reflection which is different from the direction of regular reflection of a light beam on a complete specular surface and specific to a section gradient of the defect. CONSTITUTION:A scanning direction 9 of a laser beam being parallel to the orientation flat 6 of an Si wafer is made the direction of the axis X, while the direction of an oxidation-induced defect 5 being perpendicular to the orientation flat 6 is made the direction of the axis Y. On the occasion when beam scanning is executed in the direction of the axis X in which the defect 5 exists, an angle of incidence of an incident light 7 is made thetai. When the beam is cast on the defect 5 it is bent by an angle 2theta to the direction of the axis Y by a gradient theta (which is a section gradient of a crystal transformation defect and has uniformity) and reflected. By disposing light-sensing parts 10a and 10b on extensions of reflected lights 8a and 8b deviating by angles + or -2theta from a plane Y-Z in respect to an angle thetai of reflection on this plane, so that the light-sensing surfaces thereof are positioned perpendicularly thereto, only the reflected lights by the defect 5 can be sensed. As to a diffusedly reflected light by a particle or the like, it is advisable to provide a large light-sensing part additionally for receiving it.

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