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1. 发明专利

JP2019004016A パワー半導体モジュール审中-公开
公开(公告)号：JP2019004016A
公开(公告)日：2019-01-10
申请号：JP2017116791
申请日：2017-06-14
申请人： TOSHIBA CORP , TOSHIBA ENERGY SYSTEM & SOLUTION CORP
发明人： TADA NOBUMITSU , ICHIKURA YUTA , ITO HIROAKI , WATANABE NAOTAKE , OBE TOSHIHARU , TAKIMOTO KAZUYASU , HIRATSUKA DAISUKE , KURI YUUJI , SEKIYA HIRONORI , IIO HISATAKA , MATSUMURA HITOTSUGU
IPC分类号： H01L25/07 , H01L23/29 , H01L25/18
摘要：【課題】組み立てしやすく、かつ半導体装置の歩留まりを低下させることなく、大電流容量化を実現できるパワー半導体モジュールを提供すること。【解決手段】第1金属部材は、複数の第1凸部と、複数の第1凸部が配置された領域の周囲を連続して囲む環状部とを有する。第2金属部材は、第1凸部に対向して配置された複数の第2凸部を有する。サブモジュールは、第1凸部と第2凸部との間に配置され、半導体素子と、半導体素子の一方の面と第1凸部に接合された第3金属部材と、半導体素子の他方の面と第2凸部に接合された第4金属部材とを有する。樹脂は、環状部に囲まれた領域に設けられ、第1凸部と第3金属部材との接合部、および第2凸部と第4金属部材との接合部を覆う。【選択図】図1

2. 发明专利

JP2010016925A Power semiconductor module and semiconductor power conversion device equipped with the same 审中-公开
标题翻译：功率半导体模块和半导体功率转换器件
公开(公告)号：JP2010016925A
公开(公告)日：2010-01-21
申请号：JP2008172412
申请日：2008-07-01
申请人： Toshiba Corp , 株式会社東芝
发明人： NINOMIYA TAKESHI , OBE TOSHIHARU , UEDA KAZUHIRO , SHIMIZU SADAYUKI , BABA SHINICHI
IPC分类号： H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor module for suppressing vibration of current and voltage and supplying stable output, and to provide a semiconductor power conversion device. SOLUTION: The power semiconductor module is provided with: a semiconductor element including a switching element 41a and configuring one arm; a positive pole conductor 61 connected to the positive pole side of the semiconductor element; an electrode conductor 63 connected to the negative pole side of the semiconductor element; an input/output terminal 76a provided on the switching element; and an emitter sense terminal 78a provided in a position other than the switching element and driving the switching element. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种用于抑制电流和电压振动并提供稳定输出的功率半导体模块，并提供半导体功率转换装置。解决方案：功率半导体模块设置有：包括开关元件41a和配置一个臂的半导体元件; 连接到半导体元件的正极侧的正极导体61; 连接到半导体元件的负极侧的电极导体63; 设置在开关元件上的输入/输出端子76a; 以及设置在开关元件以外的位置并驱动开关元件的发射极检测端子78a。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2007049810A Semiconductor device for power converter and power converter with temperature protection function having the semiconductor device 审中-公开
标题翻译：用于电力转换器和功率转换器的半导体器件具有具有半导体器件的温度保护功能
公开(公告)号：JP2007049810A
公开(公告)日：2007-02-22
申请号：JP2005231036
申请日：2005-08-09
申请人： Toshiba Corp , 株式会社東芝
发明人： MORIKAWA RYUICHI , OBE TOSHIHARU , TADA NOBUMITSU , SEKIYA HIRONORI , NINOMIYA TAKESHI
IPC分类号： H02M7/48
CPC分类号： H01L2224/40
摘要： PROBLEM TO BE SOLVED: To precisely detect the temperature of a semiconductor device while preventing the reduction of an execution area of a power semiconductor element. SOLUTION: An IGBT (power semiconductor element) 17A is arranged on the cooling surface of a cooler 22 via an electric insulation body 23. A wide-width conductor 33A has first and second surfaces. A part of the first surface (lower surface) of the wide-width conductor 33A is electrically connected to the main-current output side of the IGBT 17A. The wide-width conductor 33A forms a current path of the IGBT 17A and a heat radiation path of a thermal loss of the IGBT 17A. A temperature sensor 16A is arranged on the second surface (upper surface) that corresponds to the part of the first surface of the wide-width conductor 33A. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了精确地检测半导体器件的温度，同时防止功率半导体元件的执行区域的减少。解决方案：IGBT（功率半导体元件）17A经由电绝缘体23布置在冷却器22的冷却表面上。宽宽度导体33A具有第一表面和第二表面。宽幅导体33A的第一面（下表面）的一部分与IGBT 17A的主电流输出侧电连接。宽幅导体33A形成IGBT 17A的电流路径和IGBT 17A的热损失的散热路径。温度传感器16A布置在对应于宽宽度导体33A的第一表面的一部分的第二表面（上表面）上。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2004282804A Inverter device 审中-公开
公开(公告)号：JP2004282804A
公开(公告)日：2004-10-07
申请号：JP2003067019
申请日：2003-03-12
申请人： Toshiba Corp , 株式会社東芝
发明人： OBE TOSHIHARU , TADA NOBUMITSU
IPC分类号： H05K7/20 , H01L23/40 , H02M7/48
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To improve and to compact the cooling efficiency of a drive circuit and a control circuit of a power semiconductor element. SOLUTION: A plurality of heat transfer plates 29, 31 for heat transferring the heat losses of the drive circuit 15 and the control circuit 17 of the power semiconductor element 3 to a cooler 23 for cooling the power semiconductor element 3 are disposed between positive and negative electrodes 7, 9 opposed to each other of the power semiconductor element 3 and 3-phase output electrodes 13 above the power semiconductor element 3, and are brought into thermal contact with the cooler 23 for cooling the power semiconductor element 3. COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2002095267A INVERTER DEVICE 失效
公开(公告)号：JP2002095267A
公开(公告)日：2002-03-29
申请号：JP2000273663
申请日：2000-09-08
申请人： TOSHIBA CORP
发明人： OBE TOSHIHARU , TADA NOBUMITSU
IPC分类号： H01L23/36 , H01L25/07 , H01L25/18 , H02M7/48
摘要： PROBLEM TO BE SOLVED: To cool both surfaces of a plurality of semiconductor chips, improve cooling efficiency, reduce parasitic inductance of wiring, reduce over-voltage and a loss, improve capacity of current, and improve even reliability. SOLUTION: This inverter device is constituted by providing a plurality of semiconductor elements 2 for power, a drive circuit driving a plurality of the semiconductor elements 2 for power, and a control circuit 11 controlling a plurality of the semiconductor elements 2 for power. A first metal electrode 23 is connected to an upper part of a first insulating base board 22, a plurality of semiconductor chips 191, 201 are connected to an upper part of the first metal electrode 23, a thermal buffer plate 24 is connected to an upper part of a plurality of the semiconductor chips 191, 201, a second metal electrode 25 is connected to an upper part of the thermal buffer plate 24, and a second insulating base board 26 is connected to an upper part of the second metal electrode 25.

6. 发明专利

JPH11204703A SEMICONDUCTOR MODULE 失效
公开(公告)号：JPH11204703A
公开(公告)日：1999-07-30
申请号：JP344198
申请日：1998-01-09
申请人： TOSHIBA CORP
发明人： OBE TOSHIHARU
IPC分类号： H01L23/36 , H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To restrict an increase in temperature due to a transient loss of heat generation when starting conductivity, by a method wherein a conductor in which at least one terminal out of a plurality of external draw-out terminals is electrically connected to a power semiconductor device has heat capacity enough to absorb transiently generated heat in the power semiconductor device. SOLUTION: A power semiconductor device 4 is electrically connected to a power semiconductor device 5 via a first metallized wide conductor 12 having a width and a thickness, and further the power semiconductor devices 4, 5 are electrically connected to an emitter terminal 8 drawn out outside an insulative package via the first metallized wide conductor 12. The first metallized wide conductor 12 has a volume having heat capacity enough to absorb transiently generated heat in the power semiconductor devices 4, 5, and is a material of high heat conductivity. Thus, a loss of the transiently generated heat of the power semiconductor devices 4, 5 is absorbed by this first metallized wide conductor 12, and an increase in the highest temperature can be reduced. As a result, it is possible to also cope with an increase in the loss of generated heat associated with large capacity and high speed capability of the device.

7. 发明专利

JPH10173115A EBULLIENT COOLING DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH10173115A
公开(公告)日：1998-06-26
申请号：JP32625196
申请日：1996-12-06
申请人： TOSHIBA CORP
发明人： OBE TOSHIHARU , TAKAHASHI NOBUHIRO , SAITO IKUO
IPC分类号： H01L23/427
摘要： PROBLEM TO BE SOLVED: To improve the boiling heat transfer between a boiling heat transfer surface and a low-boiling point coolant and, at the same time, to prevent the interference between bubbles and a condensate in a boiling section and between vapor and a condensate in a condensing section by providing in an out coolant flow passage constituting member groups in the boiling section and a header tank. SOLUTION: In a boiling section 2, a first flow passage 10 for guiding bubbles 8 generated from a coolant to a condensing section 5, a second flow passage 11 for returning a coolant liquefied in the condensing section 5 to the boiling section 2, and a first space 12 which is provided in the lower section of the section 2 to communicate the flow passage 10 and 11 with each other are formed of coolant flow passage constituting members 13 installed in parallel with the external wall surface of the section 2 to which a semiconductor element 7 is attached. In a header tank 3, in addition, coolant flow passage constituting members 13 are providing for forming a third flow passage 14 for leading bubbles 8 generated from the coolant to the condensing section 5 and a fourth flow passage 15 for returning the coolant liquefied in the condensing section 5 to the boiling section. Then the first and second flow passages 10 and 11 are respectively communicated with the third and fourth flow passages 14 and 15.

8. 发明专利

JPH08306835A INDIRECTLY COOLING TYPE BOILING COOLER 失效
公开(公告)号：JPH08306835A
公开(公告)日：1996-11-22
申请号：JP10919895
申请日：1995-05-08
申请人： TOSHIBA CORP
发明人： OBE TOSHIHARU , MATSUMOTO HISAAKI
IPC分类号： H01L23/427
摘要： PURPOSE: To improve the cooling efficiency of an indirectly cooling type boiling cooler, by constituting a boiling part wherein power semiconductor elements are fixed to an outside heat receiving part, and refrigerant of low boiling point is sealed inside, and a condenser part which is installed above the boiling part and liquefies the vapor of the refrigerant of low boiling point. CONSTITUTION: This cooler consists of a boiling part 2 wherein power semiconductor elements 6 are fixed to an outside heat receiving part, and refrigerant 1 of low boiling point is sealed inside, and a condenser part 4 which is installed above the boiling part 2 and liquefies the vapor of the refrigerant of low boiling point. One or more rotary shafts 11 provided with propellers for stirring refrigerant are installed in the refrigerant 1 of low boiling point in the boiling part 2.

9. 发明专利

JP2019021831A 半導体装置及び半導体装置用サブモジュール审中-公开
公开(公告)号：JP2019021831A
公开(公告)日：2019-02-07
申请号：JP2017140784
申请日：2017-07-20
申请人： TOSHIBA CORP , TOSHIBA ENERGY SYSTEM & SOLUTION CORP
发明人： TAKIMOTO KAZUYASU , ICHIKURA YUTA , OBE TOSHIHARU , ITO HIROAKI , TADA NOBUMITSU , WATANABE NAOTAKE , HIRATSUKA DAISUKE , SEKIYA HIRONORI , KURI YUUJI , IIO HISATAKA , MATSUMURA HITOTSUGU
IPC分类号： H01L25/07 , H01L23/29 , H01L23/31 , H01L25/18
摘要：【課題】半導体素子に大電流が流れて半導体素子の近傍から隣接する樹脂部分にき裂が生じたときに、当該き裂を通じてガスの噴出を抑制可能な半導体装置を提供する。【解決手段】半導体装置用サブモジュール20は、そのチップ厚さ方向と垂直な方向に広がる第1主面23及び第2主面25を有する半導体素子と、第1主面23のうち少なくとも一部と電気的に接続されており、第1外面35を有する第1金属導体30と、第2主面25のうち少なくとも一部と電気的に接続されてており、第2外面を有する第2金属導体50とを有する。半導体装置10は、さらに、第1外面35の少なくとも一部と第2外面55の少なくとも一部がそれぞれサブモジュール20外に露出するように、半導体素子22、第1金属導体30及び第2金属導体50を樹脂封止する樹脂部60と、当該樹脂部60に隣接して配置されており、当該樹脂部を少なくとも部分的に囲うケース70を有する。【選択図】図2

10. 发明专利

JP2019021684A 半導体パッケージ审中-公开
公开(公告)号：JP2019021684A
公开(公告)日：2019-02-07
申请号：JP2017136512
申请日：2017-07-12
申请人： TOSHIBA CORP , TOSHIBA ENERGY SYSTEM & SOLUTION CORP
发明人： WATANABE NAOTAKE , ITO HIROAKI , ICHIKURA YUTA , OBE TOSHIHARU , TAKIMOTO KAZUYASU , TADA NOBUMITSU , HIRATSUKA DAISUKE , SEKIYA HIRONORI , KURI YUUJI , IIO HISATAKA , MATSUMURA HITOTSUGU
IPC分类号： H01L25/07 , H01L23/36 , H01L23/473 , H01L23/48 , H01L25/18
摘要：【課題】半導体チップに不具合が生じても、被害の拡大を抑制できる半導体パッケージを提供する。【解決手段】半導体パッケージは、半導体チップと、第1金属板と、第2金属板と、封止部材と、を備える。前記半導体チップの第1面には第1電極が設けられ、第2面には第2電極が設けられている。前記第1金属板は、前記半導体チップの前記第1面上に積層され、前記半導体チップの側方において、端部の第1部分が前記第1面から前記第2面に向かう第1方向に向けて延出している。前記第1部分の先端は前記第2面よりも前記第1方向側に配置されている。前記第2金属板は、前記半導体チップの前記第2面上に積層され、前記半導体チップ及び前記第1部分の側方において、端部の第2部分が前記第2面から前記第1面に向かう第2方向に向けて延出している。前記第2部分の先端は前記第1部分の先端よりも前記第2方向側に配置されている。【選択図】図1

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