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1. 发明专利

JPH01241839A DEVICE FOR HOLDING SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH01241839A
公开(公告)日：1989-09-26
申请号：JP6810988
申请日：1988-03-24
申请人： TOSHIBA CORP
发明人： NINOMIYA MASAHARU
IPC分类号： B23Q3/15 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PURPOSE:To update only a substrate protective capacity while it is used by forming an insulator having a profile smaller than that of a semiconductor wafer on a substrate, and forming electrodes for generating an electrostatic chucking function therein. CONSTITUTION:A substrate 8 is formed of a good thermal conductive metal such as copper, aluminium or the like. A temperature regulating space 9 for regulating temperature by passing constant temperature water or the like therethrough is formed in the substrate 8. A protrusionlike insulator 11 having a profile smaller than that of a semiconductor wafer is formed on the substrate 8. As the insulator, alumina which has equivalent thermal conductivity to that of stainless steel and hardness higher than that of silicon or stainless steel is desirable, and it is preferable to manufacture it by a method having good adhesive properties for flame spraying or the like by considering thermal transfer from the substrate 8. Positive and negative electrodes 4, 5, 6, 7 are formed by plating or metallizing on the insulator 11, covered thereon with alumina to form an insulator 11. A plastic sheet 2 so having an opening shape as not to directly visually observe the substrate 8 from above when the wafer 1 is set is provided on the substrate 8. In order to easily replace the sheet 2 at the time of deterioration, the sheet 2 is desirably made of an adhesive sheet made of Teflon or polyimide.

2. 发明专利

JPS6143442A Orientation device of wafer 失效
标题翻译： WAFER定位装置
公开(公告)号：JPS6143442A
公开(公告)日：1986-03-03
申请号：JP16483684
申请日：1984-08-08
申请人： Toshiba Corp
发明人： NINOMIYA MASAHARU
IPC分类号： H01L21/68 , G05D3/12 , H01L21/67 , H01L29/04
CPC分类号： H01L29/045
摘要： PURPOSE:To perform orientation of any wafers with different diameters without adjustment and contact with periphery thereof by a method wherein peripheral plane of wafer is irradiated with the light flux from a projector to change the light quantity entering into a light receiver by means of changing the reflecting directions corresponding to the angle of optical axis meeting the peripheral plane of wafer. CONSTITUTION:A projector 8 projects light flux into an almost central point on almost level surface of a wafer 2. Then the light flux hitting the peripheral plane 15 through a halfmirror 9 is reflected by the plane 15 back to the mirror 9 by which the light flux is further reflected in a light receiver 10. At this time, a motor 16 is driven to make a controller 17 process a received light quantity related to the rotating angle for detecting the relation between the direction of orientation flat and the rotating angle of motor 16 to be stopped at any specified rotating angle. Now assuming the applicable light flux to be parallel beams, any wafer with different nominal dimention of diameter may be assured of equivalent light quantity received without any adjustment or alteration of mechanism at all. Besides, the orientation flat for peripheral plane 15 may be detected with no contact therewith by means of utilizing the light flux.
摘要翻译：目的：通过一种方法来执行不同直径的任何晶片的取向，通过一种方法，其中晶片的外围平面用来自投影仪的光束照射，以通过改变光接收器来改变进入光接收器的光量反射与晶片的圆周面相同的光轴的角度。构成：投影仪8将光束投射到晶片2的几乎水平的表面上的几乎中心点。然后，通过半透镜9撞击外围平面15的光束被平面15反射回到反射镜9，由此光磁通量进一步反映在光接收器10中。此时，电动机16被驱动以使控制器17处理与旋转角度相关的接收光量，以检测取向平面的方向与电动机的旋转角度之间的关系 16以任何指定的旋转角度停止。现在假设适用的光通量为平行光束，任何具有不同标称直径尺寸的晶片都可以确保接收到的等效光量，完全没有任何调整或改变。此外，可以通过利用光通量而不与其接触来检测外围平面15的取向平面。

3. 发明专利

JPS6414920A PLASMA ETCHING APPARATUS 失效
公开(公告)号：JPS6414920A
公开(公告)日：1989-01-19
申请号：JP17057487
申请日：1987-07-08
申请人： TOSHIBA CORP
发明人： FUJIWARA NAOYOSHI , HAMASHIMA KOTARO , NINOMIYA MASAHARU , OKUYAMA TOSHIHISA
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To etch a material to be treated at a high speed without damage by applying a sealing electric field to the end of a sealing magnetic field to prevent a plasma from diverging from the vicinity of a placing plate along the magnetic field. CONSTITUTION:Etching gas is introduced into a quartz tube 2 of a vacuum vessel 1. A current flows to coils 11A, 11B to generate a magnetic field, a microwave is generated by a magnetron 10, and the gas is operated by the magnetic field and a high frequency electric field to generate a plasma. A sealing high frequency is applied from a high frequency power supply 13. to plugging electrodes 12A, 12B to prevent the plasma from escaplng from the end of a mirror magnetic field Mmiror or cusp magnetic field Mcusp. When a high frequency electric field is applied from a high frequency power supply 9 between parallel flat plate electrodes 4 and 6, plasma ions are accelerated by a bias voltage applied between the electrodes 4 and 6 by a blocking capacitor 8 to etching a wafer 5 placed on the electrode 4.

4. 发明专利

JPS63252441A POSITIONING OF WAFER DIRECTION AND DEVICE THEREFOR 失效
公开(公告)号：JPS63252441A
公开(公告)日：1988-10-19
申请号：JP8580487
申请日：1987-04-09
申请人： TOSHIBA CORP
发明人： NINOMIYA MASAHARU
IPC分类号： G05D3/12 , H01L21/68
摘要： PURPOSE:To perform positioning of a wafer in the desired direction by projecting light on the wafer from a projector to project the light to the peripheral surface of the wafer through a half mirror and by reflecting the reflected light with the half mirror, thereby projecting the light on a light receiving apparatus. CONSTITUTION:A light flux is projected almost in a horizontal plane of a wafer from the first and second projectors 8a and 8b which are installed in parallel, being spaced distance equivalent to a width size of an orientation flat 4 apart. After passing the first and second half mirrors 9a and 9b, the light flux is projected to the peripheral surface 2a of the wafer 2 and returns to the mirrors 9a and 9b through reflecting and then, being reflected by the mirrors 9a and 9b, their lights come into the first and second light receiving apparatus 10a and 10b. A driving source 11 attached to the wafer is rotated and as to respective amounts of receiving lights which are related to the rotation angles of its rotation, an operation is performed by a controlling device 12 and then, a relation between a direction of the orientation flat and rotation angles of the drive source 11 is calculated and its result allows the drive source 11 to be stopped at a desired angle. Thus positioning of the wafer is performed in the desired direction.

5. 发明专利

JPS6276621A APERTURE MASK FOR CHARGED BEAM RESTRICTION 失效
公开(公告)号：JPS6276621A
公开(公告)日：1987-04-08
申请号：JP21649485
申请日：1985-09-30
申请人： TOSHIBA CORP
发明人： NINOMIYA MASAHARU
IPC分类号： H01L21/027 , H01L21/30
摘要： PURPOSE:To improve the machining accuracy of an aperture by a method wherein two openings differing in diameter are used for aperture to make the thickness of a mask substrate sufficient thickness for heat conduction, and the depth of the opening is made thin to the degree where required machining accuracy can be obtained so as to prevent the thermal deformation of the aper ture and melting losses with favorable heat conduction. CONSTITUTION:The trancated corn-shaped second opening 12 is formed until it reaches from the back of the mask substrate 10 to the surface. Then, the first opening section 11 whose diameter is smaller than the largest diameter of the second opening section 12 and is larger than the smallest diameter of the second one is formed from the surface of the substrate 10 parallel to it. For forming the first opening section 11, it is convenient to use the substrate with higher machining accuracy such as panching. When the first opening section 11 is formed, the depth h of the first opening section 11 is sufficiently shallower than the thickness of the substrate 10. Moreover, it is possible to change the depth h beforehand in accordance with conditions such as the size of the second opening 12 and its taper angle suitably and also possible to sufficiently make it thin until the required machining accuraly is obtained.

6. 发明专利

JPH03229861A ELECTRON BEAM EVAPORATING DEVICE 失效
公开(公告)号：JPH03229861A
公开(公告)日：1991-10-11
申请号：JP2227290
申请日：1990-02-02
申请人： TOSHIBA CORP
发明人： NINOMIYA MASAHARU , MUKODA HIDETOSHI
IPC分类号： C23C14/30
摘要： PURPOSE:To detect the damage of a crucible hearth liner in an initial stage by detecting the electron beam current flowing in the hearth liner at the time of evaporating the metal for evaporation disposed in the hearth liner by the electron beam. CONSTITUTION:Thermions 2 which are released by passing a current to a filament 1 to heat the same are accelerated between electrodes 3 and 4 and are deflected by a magnetic field, etc. The metal 7 for evaporation in the crucible hearth liner 6 is irradiated with these electrons to generate metal vapor 8. An ammeter 13 for detecting the electron beam current is electrically connected between the hearth liner 6 and an earth potential so that the flow of the electron beam current to the hearth liner 6 is detected by the ammeter 13 when the insulating layers 11, 11' of the hearth liner 6 are broken and the electron beam current flows to the hearth liner. The damage of the hearth liner 6 is detected in the initial stage in this way and the damage of the water cooled crucible 9 is prevented.

7. 发明专利

JPH02280658A SOLENOID PUMP 失效
公开(公告)号：JPH02280658A
公开(公告)日：1990-11-16
申请号：JP10054589
申请日：1989-04-20
申请人： TOSHIBA CORP
发明人： NINOMIYA MASAHARU , ODAJIMA WATARU
IPC分类号： H02K44/06
摘要： PURPOSE:To improve the reliability and to obtain a small size large capacity pump by placing a compression spring waved in the longitudinal direction of core at at least one of the interval between inter-slot tees of stator core and an outside tube and the interval between the back of the stator core and the sheath. CONSTITUTION:Fluid 9 has temperature of 350 deg.C while the outside stator core 1 has temperature of 500 deg.C and the electrified stator core 2 has temperature of 600 deg.C. Although each member expands/contracts according to its thermal expansion coefficient, radial dimensional variation is absorbed through the spring force of a waved compression spring 11 while axial dimensional variation is absorbed through slippage between the outside stator core 1 and an outside tube 4 thus causing no stress. Heat produced in the coil 2 is discharged through flow path of the outside stator core 1 - the outside tube 4 - fluid 7a, and thereby temperature rise of the stator core 2 can be suppressed.

8. 发明专利

JPS64284A PLASMA ACCELERATOR 失效
公开(公告)号：JPS64284A
公开(公告)日：1989-01-05
申请号：JP14647587
申请日：1987-06-12
申请人： TOSHIBA CORP
发明人： FUJIWARA NAOYOSHI , HAMASHIMA KOTARO , NINOMIYA MASAHARU , YOSHIDA MASAO
IPC分类号： C23F4/00
摘要： PURPOSE:To widen the control range of a plasma speed by adopting the control by Lorentz force and the control by ion energy using high frequencies to accelerate the plasma. CONSTITUTION:A DC voltage is impressed between a pair of accelerating electrodes 1a and 1b by an accelerating power supply 2. A high-frequency power supply 7 is connected to a wafer base 5 which supports a wafer to serve as a target and a high-frequency voltage is impressed between the wafer base 5 and the electrodes 1a, 1b. The plasma 8 flows between the electrodes 1a and 1b and is accelerated toward the wafer base 5. Current (j) flows between the electrodes 1a and 1b and the magnetic field generated by a magnetic field generating means is generated at a specific angle to the current (j) as shown by an arrow B. The Lorentz force F, therefore, acts toward the wafer base 5. The size thereof is determined by jXB. The acceleration of the plasma 8 is executed by controlling the voltage of the accelerating power supply 2.

9. 发明专利

JPS642321A PLASMA ETCHING DEVICE 失效
公开(公告)号：JPS642321A
公开(公告)日：1989-01-06
申请号：JP15865287
申请日：1987-06-25
申请人： TOSHIBA CORP
发明人： HAMASHIMA KOTARO , FUJIWARA NAOYOSHI , NINOMIYA MASAHARU , YOSHIDA MASAO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To make it possible to conduct high speed etching by a method wherein the etching is conducted by confining the plasma of etching gas produced by the microwave excitation between paralleled flat-plate electrodes using a magnetic field applying means. CONSTITUTION:Etching gas is introduced into the quartz tube 2 of a vacuum container 1, magnetic field is generated by applying a current on coils 7A and 7B, and at the same time, microwaves are generated by a magnetron 10, and plasma is generated by allowing the magnetic field and high frequency electric field to work on the etching gas. As bias voltage is applied between the electrodes 4 and 6, plasma ions are accelerated, and the wafer 5 placed on the electrode 4 is etched. At this time, plasma is confined between the electrodes 4 and 6 by magnetic field Mmirror and MCUSP for confinement. Accordingly, plasma density can be enhanced, and high-speed etching can be conducted without giving damage on the wafer.

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