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1. 发明专利

JPH0697519A SUPERCONDUCTING ELEMENT 失效
公开(公告)号：JPH0697519A
公开(公告)日：1994-04-08
申请号：JP24511992
申请日：1992-09-14
申请人： TOSHIBA CORP
发明人： TAKENO SHIRO , NAKAMURA SHINICHI , TERAJIMA YOSHIAKI , MIURA TADAO
IPC分类号： H01L39/22
摘要： PURPOSE:To form an S/N/S junction capable of obtaining, e.g. a sufficient superconducting current by a simple manufacturing process. CONSTITUTION:The title superconducting element has a hetero junction of superconductor (S1)/non-superconductor (N)/superconductor (S2). As the superconductor, an oxide superconductor thin film is used which is composed of tetragonal system Sr1-xMx)CuO2 (M is bivalent cation element or trivalent cation element and 0

2. 发明专利

JPH05301715A 失效
公开(公告)号：JPH05301715A
公开(公告)日：1993-11-16
申请号：JP10785592
申请日：1992-04-27
申请人： TOSHIBA CORP
发明人： ISHIZUKA YOSHIKI , MIURA TADAO
IPC分类号： C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00 , H01L39/02
摘要： PURPOSE:To form the uniform oxide superconductive thin film capable of controlling distances between Cub. surfaces and the concentration of a carrier in the good reproducibility without being restricted by the thickness of the film. CONSTITUTION:(1) The oxide superconductor in which the first element positioned between the CuO2 surfaces in the copper oxide superconductor thin film is substituted with the second element having a different ion radius is characterized by disposing the copper oxide superconductor thin film on a substrate forming the lattice mismatching corresponding to the difference between the ion radii of the first and second elements. In the copper oxide superconductor thin film, the first element originally positioned between the CuO2 surfaces of the oxide superconductor thin film is substituted with the second element between the CuO2 surfaces expanded or contracted by the interaction caused by the lattice mismatching on the interface between the surface of the substrate and the surface of the oxide superconductor thin film. (2) The method for producing the oxide thin film is characterized by selecting a substrate material forming the lattice mismatching corresponding to the difference between the ion radii of the first and second elements as the raw material of the substrate for forming the thin film and subsequently feeding the thin film-forming raw material on the surface of th substrate in a gaseous phase.

3. 发明专利

JPH02311306A PRODUCTION OF OXIDE SUPERCONDUCTOR THIN FILM 失效
公开(公告)号：JPH02311306A
公开(公告)日：1990-12-26
申请号：JP13513889
申请日：1989-05-29
申请人： TOSHIBA CORP
发明人： MIURA TADAO
IPC分类号： C04B41/87 , C01B13/14 , C01G1/00 , C01G3/00 , C23C14/08 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain an oxide superconductor thin film having prescribed characteristics in high reproducibility and precision by forming a film of an oxide superconductor thin film on a basal substrate and irradiating the film surface with an active oxygen in pulse exclusively at a prescribed period in the course of the film-forming process. CONSTITUTION:An oxide superconducting thin film is formed on a basal substrate by irradiating the formed film surface with at least one kind of active oxygen exclusively at a prescribed period during the formation of the oxide superconductor thin film on the basal substrate, thereby supplying active oxygen to the film. The oxide superconductor thin film having prescribed superconducting characteristics can be produced without inhibiting the growth of the film by irradiating the film with active oxygen in pulse exclusively at a prescribed period to supply oxygen only at a necessary time. The oxygen can be effectively introduced to the oxide superconductor thin film and the growth of the layer can be controlled at the atomic layer level by the pulse-like radiation of the active oxygen. Accordingly, an oxide superconductor thin film can be produced in high reproducibility and precision.

4. 发明专利

JPS6417322A MANUFACTURE OF OXIDE SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPS6417322A
公开(公告)日：1989-01-20
申请号：JP17122087
申请日：1987-07-10
申请人： TOSHIBA CORP
发明人： MIURA TADAO , TERAJIMA YOSHIAKI , HORI AKIO , SUNAI MASAYUKI
IPC分类号： C23C14/34 , C23C14/08 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/12
摘要： PURPOSE:To improve the reproducibility by forming a specific oxide superconducting thin film by the spattering method in which the rare gas containing the specific % of oxygen gas is used as the spatter gas. CONSTITUTION:A substrate 1 is installed on a substrate holder 12, rare gas is fed from a gas feed system (I) 16, O2 gas is fed from a gas feed system (II) 17, and an oxide superconducting thin film 2 with the composition of Ln: M:Cu:O=1:2:3:(7-delta) is formed by the spattering method in which the rare gas containing 0.1%-5% of oxygen gas is used as the spatter gas, where Ln is at least one kind of element selected from a group of rare earth elements, M is at least one kind of element selected from a group of Ba, Sr, Ce, and deltais larger than 0 and lees than 1 and indicates the oxygen deficiency. Cu can be thereby prevented from being segregated by the heat treatment, and the reproducibility is improved.

5. 发明专利

JPS61104070A Formation of thin film 失效
标题翻译：形成薄膜
公开(公告)号：JPS61104070A
公开(公告)日：1986-05-22
申请号：JP22291084
申请日：1984-10-25
申请人： Toshiba Corp
发明人： HIUGAJI MASAHIKO , MIURA TADAO
IPC分类号： C23C14/00 , C23C14/08 , C23C14/22 , C23C14/24 , G02B1/10
CPC分类号： C23C14/08 , C23C14/0021 , C23C14/22
摘要： PURPOSE:To form easily a thin film contg. oxygen with good reproducibility by irradiating an electron beam while exposing a thin film formed on a substrate to a gaseous atmosphere contg. oxygen as the component element at an optional time during the formation of the thin film. CONSTITUTION:In a thin film forming vessel 1 under vacuum or in a low- pressure gaseous atmosphere, a substrate 2 is heated to a specified temp. by a heater 6, the vaporization base material 7 packed in a crucible 5 is heated by a heater 8 to vaporize the materials at a specified vaporization speed, and a thin film is vapor-deposited on said substrate 2 in specified thickness. At an optional time during said vapor deposition, a gas contg. oxygen as the component element is introduced continuously or intermittently through a variable-leak valve 3 to specified pressure. An electron beam is simultaneously irradiated on the substrate 2 by using an electron gun 4. Consequently, a thin film contg. sufficient oxygen can be formed without deteriorating the crystallinity of the thin film.
摘要翻译：目的：轻松形成薄膜，通过在将形成在基板上的薄膜暴露于气体气氛的同时照射电子束，具有良好的再现性的氧。在形成薄膜期间的任选时间，氧作为组分元素。构成：在薄膜形成容器1中，在真空或低压气氛下，将基板2加热至特定温度。通过加热器6，填充在坩埚5中的汽化基材7被加热器8加热，以特定的蒸发速度使材料蒸发，并且在所述基板2上以特定厚度气相沉积薄膜。在所述气相沉积期间的任选时间，通过可变泄漏阀3连续地或间歇地引入作为构成要素的氧气到规定的压力。通过使用电子枪4将电子束同时照射在基板2上。可以形成足够的氧，而不会使薄膜的结晶性劣化。

6. 发明专利

JPS54149657A Display cell 失效
标题翻译：显示单元
公开(公告)号：JPS54149657A
公开(公告)日：1979-11-24
申请号：JP5710978
申请日：1978-05-16
申请人： Toshiba Corp
发明人： MORITA HIROSHI , MIURA TADAO , WASHIDA HIROSHI
IPC分类号： G02F1/17 , G02F1/15 , G02F1/153 , G02F1/155 , G09F9/00 , G09F9/30
摘要： PURPOSE: To protect an electrode terminal from an electrolyte and to enlarge a lower electrode thereby to improve the resposiveness and lifetime by forming an electrochromic color developing layer on the electrode of an insulating protecting layer, which is formed in the periphery of the electrode, and a display portion.
CONSTITUTION: An opposite electrode and a display electrode 18 are placed at a preset spacing inbetween, and an electrolyte is arranged inbetween. The electrode 18 has its periphery covered with an insulating protecting layer 20, and an electrochromic color developing layer 19 is laminted thereabove upon the display portion of the electrode 18 and upon the peripheral layer 20. In this instance, the length b of the layer 19 on the layer 20 is made to range in an x axis within the Equation (wherein: a stands for the thickness of the layer 19, D stands for the diffusion coefficient of electrons in the layer 19; τ stands for the following time of 0.0625 seconds of human eyes to the change in the outside light; and A stands for the density discriminating capacity of 0.95 of human eyes).
COPYRIGHT: (C)1979,JPO&Japio
摘要翻译：目的：为了保护电极端子免受电解质的影响，并且通过在形成在电极周边的绝缘保护层的电极上形成电致变色彩色显影层来增大下电极，从而提高曝光和使用寿命，以及显示部分。构成：相对电极和显示电极18之间以预定间隔放置，并且电解质之间布置。电极18的周边被绝缘保护层20覆盖，并且电致变色彩色显影层19在电极18的显示部分和周边层20上方在其上方被分层。在这种情况下，层19的长度b 在层20上使得在等式中的x轴上的范围（其中：a表示层19的厚度，D表示层19中的电子的扩散系数;τ表示以下时间为0.0625秒人眼对外界光线的变化; A表示人眼的浓度辨别能力）。

7. 发明专利

JPH06211597A FILM FORMING DEVICE WITH FILM EVALUATING MECHANISM 失效
公开(公告)号：JPH06211597A
公开(公告)日：1994-08-02
申请号：JP510293
申请日：1993-01-14
申请人： TOSHIBA CORP
发明人： ISHIZUKA YOSHIKI , MIURA TADAO
IPC分类号： C01G1/00 , C23C14/54 , C30B23/08 , G01N23/207 , H01L21/203 , H01L21/66
摘要： PURPOSE:To provide the film forming device with a film evaluating mechanism with which exact diffraction patterns are obtainable without entailing the degradation in working efficiency. CONSTITUTION:This film forming device has a film forming chamber 2 in which a base body 21 to be treated is housed, Knudsen cells 7a to 7d for supplying thin-film materials to the surface of this base body 21 to be treated, a first electron gun 8a which irradiates the surface of the base body 21 to be treated with electron beams, a second electron gun 8b which emits the electron beams of the direction perpendicular to the incident direction of the electron beams of the electron gun 8a to the base body 21 to be treated and fluorescent screens 9a, 9b which detect the diffraction patterns of the electron beams reflected by the surface of the base body 21 to be treated.

8. 发明专利

JPH0680419A PRODUCTION OF OXIDE SUPERCONDUCTOR THIN FILM AND SUPERCONDUCTING TUNNEL JUNCTION AND SUPERCONDUCTING ELEMENT 失效
公开(公告)号：JPH0680419A
公开(公告)日：1994-03-22
申请号：JP22857592
申请日：1992-08-27
申请人： TOSHIBA CORP
发明人： TERAJIMA YOSHIAKI , SATO TOSHIE , MIURA TADAO
IPC分类号： C01G1/00 , C01G3/00 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To provide a method for producing an oxide superconductor thin film having an infinite layer structure of good quality without using a high- pressure process and a method for producing a superconducting tunnel junction of good quality in a simple production process. CONSTITUTION:Atoms or molecules in an amount of a nearly one atomic layer expressed by the formula A1-xRExOz [A denotes alkaline earth element; RE denotes rare earth element; (x) denote 0 =500, 0.1 =0.005T-2.9 when the substrate temperature in forming the film is T ( deg.C) and the oxygen partial pressure in an atmospheric gas in forming the film is P (Pa). Thereby, the objective oxide superconductor layer having an infinite layer structure is formed. A nonsuperconductor layer composed of the elements of the same construction is formed according to a method for forming the thin film satisfying the conditions of T>=500, P

9. 发明专利

JPH0567815A SUPERCONDUCTING ELEMENT 失效
公开(公告)号：JPH0567815A
公开(公告)日：1993-03-19
申请号：JP26151691
申请日：1991-10-09
申请人： TOSHIBA CORP
发明人： IKEGAWA SUMIO , ISHIZUKA YOSHIKI , MIURA TADAO , ANDO TAKESHI
IPC分类号： H01L39/22
摘要： PURPOSE:To provide a superconducting element which can realize a Josephson junction and by which a good Josephson characteristic is reproduced on an arbitrary section of a substrate with a laminated and simple construction. CONSTITUTION:The first superconductor layer 12 whose crystal axes c are aligned in a certain direction is provided on a substrate 11. On this first superconductor layer 12, the second superconductor layer 13 whose crystal axes c are aligned in the direction different from that of the first superconductor layer 12 is laminated. Copper group oxide superconductor films with c axis orientation or oblique orientation, for example, are used as superconductor layers 12 and 13. At a boundary 14 between the first supercondutor layer 12 and the second superconductor layer 13, intercrystalline Josephson junction is formed corresponding to an angle PSI formed by c axes of the crystal.

10. 发明专利

JPH03223110A OXIDE SUPERCONDUCTOR THIN FILM 失效
公开(公告)号：JPH03223110A
公开(公告)日：1991-10-02
申请号：JP1854690
申请日：1990-01-29
申请人： TOSHIBA CORP
发明人： TAKENO SHIRO , NAKAMURA SHINICHI , SUNAI MASAYUKI , MIURA TADAO
IPC分类号： C04B41/87 , C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00
摘要： PURPOSE:To provide an oxide superconductor thin film having a high critical electric current density due to the introduction of high density magnetic flux line pinning sensors thereinto by introducing twins into the tissue, the twins having the crystal lattice (103) surface of an oxide superconductor substantially represented by a specific formula as twinning planes. CONSTITUTION:The thin film of an oxide superconductor (e.g. Y-Ba-Cu-O oxide superconductor) substantially represented by the formula and having to following characteristics is provided. Is the characteristics, twins having the surface (103) of the crystal lattice of the oxide superconductor as a twinning plain is introduced into the tissue as shown in the drawing, thereby permitting to provide the thin film of the oxide superconductor having a high critical electric current density because high density magnetic flux line pinning sensors can be introduced in the superconductor.

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