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1. 发明专利

JP2001102460A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001102460A
公开(公告)日：2001-04-13
申请号：JP27992999
申请日：1999-09-30
申请人： TOSHIBA CORP
发明人： KURIYAMA YASUHIKO
IPC分类号： H01L27/082 , H01L21/8222 , H03F1/00 , H03F1/30 , H03F3/21 , H03F3/68
摘要： PROBLEM TO BE SOLVED: To miniaturize a chip of a power amplifier for a dual band portable terminal. SOLUTION: On a single chip, first and second power amplifiers are formed, and they comprise a multi-emitter bipolar transistor, respectively. A first unit transistor of the first power amplifier and a second unit transistor of the second power amplifier are substantially alternately placed in a plane.

2. 发明专利

JP2000022521A FREQUENCY DIVIDER 失效
公开(公告)号：JP2000022521A
公开(公告)日：2000-01-21
申请号：JP19954798
申请日：1998-06-30
申请人： TOSHIBA CORP
发明人： KURIYAMA YASUHIKO
IPC分类号： H03K23/00 , H03B5/18 , H03B19/14 , H03K3/2893 , H03K5/00 , H03L7/099 , H03L7/183 , H03L7/24
摘要： PROBLEM TO BE SOLVED: To provide a frequency divider capable of enlarging a frequency range and performing a high-speed operation by changing a free-run frequency without largely changing an output signal amplitude. SOLUTION: This frequency divider is composed of two basic gates 10 and 20 for adding together the output of two differential circuits 11, 12 and 21 and 22, inputting it to an emitter-follower for negative feedback to the input of the differential circuits 12 and 22 from the emitter-follower. Then, the added output of the differential circuits 11 and 12 is inputted from the basic gate 10 of a first stage to the basic gate 20 of a second stage, the output of the basic gate 20 is fed back to the input of the differential circuit 11 of the basic gate 10 and a ring oscillator is constituted. A current is supplied from a common current source CS1 through a current switch circuit 30 to the differential circuits 11 and 21 of the basic gates 10 and 20, the current is individually supplied from current sources CS3 and CS4 to the differential circuits 12 and 22, differential input signals are inputted to the current switch circuit 30 and frequency divided output signals are taken out from the output of the basic gate 20 of the second stage.

3. 发明专利

JPH11288947A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH11288947A
公开(公告)日：1999-10-19
申请号：JP9106598
申请日：1998-04-03
申请人： TOSHIBA CORP
发明人： MORITSUKA KOHEI , SUGIYAMA TORU , HONGO SADAHITO , NOZU TETSUO , TSUDA KUNIO , KURIYAMA YASUHIKO
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8224 , H01L21/8228 , H01L27/082 , H01L29/205 , H01L29/737
摘要： PROBLEM TO BE SOLVED: To achieve high current gain by using a substance with a small effective state density of a conduction band for a semiconductor for constituting an embedded base layer of a horizontal type bipolar transistor. SOLUTION: An n -type GaAs layer 22, an n -type InGaP layer 23, and an n -type GaAs layer 24 are successively formed on the main surface of a GaAs substrate 21 in the forming region of a horizontal-type pnp bipolar transistor. In this case, by using for example, a GaAs layer for a surface layer 24 of an embedded base layer that has been doped heavily, an apparent band gap reduction effect can be reduced, thus suppressing the penetration of carriers into the embedded base layer 22, 23, and 24 of positive holes, reducing the accumulation of positive holes, and hence obtaining a high current gain. More specifically, GaAs has a small effective state density of a conduction band and degenerates, when the carrier concentration is made to 10 cm or higher. Therefore, by increasing the doping concentration, a current gain can be improved.

4. 发明专利

JPH1065057A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1065057A
公开(公告)日：1998-03-06
申请号：JP21340996
申请日：1996-08-13
申请人： TOSHIBA CORP
发明人： HIGUCHI KAZUTO , KONNO YOSHIO , KURIYAMA YASUHIKO , ONO NAOKO , SAITO MASAYUKI
IPC分类号： H01L23/12
摘要： PROBLEM TO BE SOLVED: To mount a semiconductor chip with its face up and reduce the mounting area by using a semiconductor chip having bump electrodes formed on input/output terminals arranged at the marginal area of the chip and electrically connecting the bump electrode side faces to the wiring electrode surface on a board with solder bridges. SOLUTION: Input/output terminals 9 are formed at the marginal area of a base semiconductor chip 2 and bump electrodes 4 formed on the terminals 9. A semiconductor chip 3 mounted on the chip 2 is mounted on a mounting board 1 with a hybrid IC molded with a resin mold 13 and bump electrodes 4 electrically connected to wiring electrodes 11 near the electrodes 4 through bridges 5. The side faces of the electrodes 4 are flush with the side face of the base board 2 and solder bumps formed at the side faces are well connected. Thus it is possible to place the wiring electrodes 11 near round the chip 2 on the board 1 and reduce the mounting area.

5. 发明专利

JPH0661246A PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0661246A
公开(公告)日：1994-03-04
申请号：JP21260892
申请日：1992-08-10
申请人： TOSHIBA CORP
发明人： TSUDA KUNIO , KURIYAMA YASUHIKO , ASAKA MASAYUKI , SUGIYAMA TORU , HONGO SADAHITO
IPC分类号： H01L29/205 , H01L21/331 , H01L29/73 , H01L29/737
摘要： PURPOSE:To form a high speed and high cut-off frequency bipolar transistor by forming an emitter electrode and a base electrode, performing etching after removing a second insulating layer, coating the top plane with a resin layer so as to flatten and exposing a first insulating layer. CONSTITUTION:Each electrode of an emitter 11, a base 15 and a collector 20 of a heterojunction HBT constituted of compound semiconductor is formed by self-aligning means so as to allow the reduction of the widths of the emitter, base and collector, and the high speed and high cut-off frequency HBT is constituted. Thus, base resistance is remarkably reduced and the base/collector contact capacity is reduced. A collector electrode can be self-aligned with a base electrode and the collector series resistance is reduced. Grated base structure is applied to the base so as to remarkably reduce the transistor parasitic quantity and the high frequency characteristics of the transistor is remarkably improved.

6. 发明专利

JPH05175223A MANUFACTURE OF HETERO-JUNCTION BIPOLAR TRANSISTOR 失效
公开(公告)号：JPH05175223A
公开(公告)日：1993-07-13
申请号：JP34561691
申请日：1991-12-26
申请人： TOSHIBA CORP
发明人： KURIYAMA YASUHIKO , IIZUKA NORIO , KOBAYASHI TORAKICHI , ASAKA MASAYUKI , AKAGI JUNKO , TSUDA KUNIO
IPC分类号： H01L29/205 , H01L21/331 , H01L29/73 , H01L29/737
摘要： PURPOSE:To obtain a manufacturing method of a fine hetero-junction bipolar transistor wherein emitter size-effect is simply solved. CONSTITUTION:On a semi-insulative GaAs substrate 1, the following are formed one after another an n type GaAs subcollector layer 2, an n type GaAs collector layer 3, a p type GaAs base layer 4, an n-type AlGaAs emitter layer 5, and an n type GaAs emitter cap layer 6. After the emitter region is subjected to mesa working, and a base electrode 7 of high melting point metal is formed, the base electrode 7 is used as a mask for selective growth, and an i-type AlGaAs layer 8 is selectively grown on the emitter mesa side surface.

7. 发明专利

JP2005353815A Semiconductor device, its manufacturing method and defect detecting method thereof 有权
标题翻译：半导体器件及其制造方法及其缺陷检测方法
公开(公告)号：JP2005353815A
公开(公告)日：2005-12-22
申请号：JP2004172452
申请日：2004-06-10
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIURA MASAYUKI , KURIYAMA YASUHIKO , SUGIYAMA TORU , TANABE YOSHIICHI , SHIBAMIYA MAKOTO
IPC分类号： H01L21/60 , H01L23/495 , H01L23/544
CPC分类号： H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which a situation is avoided that a chip crack cannot be detected, and, even when micro-cracks occur in a compound semiconductor or the like, the chip crack can be detected. SOLUTION: In the semiconductor device, a pn junction 2 is formed in a band-shaped pattern so as to enclose an element region at a central portion in the peripheral portion of a semiconductor chip. A semiconductor pattern of one conductive type (n) is annularly formed to further have pads 3a, 3b connected electrically to the pattern. The semiconductor pattern 6 of the other conductive type (p) has a structure which has one end connected electrically to another pad. By measuring electric characteristics of the two pads, crazing and chipping occurred in the chip are detected at a good sensitivity. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了提供避免无法检测到芯片裂纹的情况的半导体器件，并且即使在化合物半导体等中发生微裂纹，也可以检测出芯片裂纹。解决方案：在半导体器件中，pn结2形成为带状图案，以便在半导体芯片的周边部分的中心部分处包围元件区域。一个导电类型（n）的半导体图案被环形地形成，以进一步具有与图案电连接的焊盘3a，3b。另一种导电类型（p）的半导体图形6具有一端与另一个焊盘电连接的结构。通过测量两个焊盘的电特性，以良好的灵敏度检测芯片中发生的裂纹和碎裂。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005311852A High frequency amplifying device 审中-公开
标题翻译：高频放大器件
公开(公告)号：JP2005311852A
公开(公告)日：2005-11-04
申请号：JP2004128154
申请日：2004-04-23
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIURA MASAYUKI , KURIYAMA YASUHIKO , SUGIYAMA TORU , TANABE YOSHIICHI , SHIBAMIYA MAKOTO
IPC分类号： H03F3/60 , H01L23/498 , H01L23/50 , H01L23/522 , H01L23/66 , H01L29/00 , H03F3/19
CPC分类号： H01L23/66 , H01L23/49838 , H01L23/50 , H01L23/5223 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/6644 , H01L2223/665 , H01L2224/0401 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/16 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48599 , H01L2224/48799 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/1305 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/20758 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03F3/601 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： PROBLEM TO BE SOLVED: To realize cost reduction and miniaturization of a high frequency amplifying device without lowering its performance. SOLUTION: This high frequency amplifying device 1 comprises a high frequency amplifier 6 having an input terminal and an output terminal, a first capacitor 17, and a second capacitor 18. The first capacitor 17 has a first electrode and a second electrode, and a first insulating film formed between the first electrode and the second electrode, and the first electrode is connected to the output terminal via a first inductor 14, and the second electrode is connected to a ground. The second capacitor 18 has a third electrode and a fourth electrode made of the same material as those of the first and second electrodes, and a second insulating film formed between the third electrode and the fourth electrode, made of the same material and having a thickness approximately the same as the first insulating film, and the third electrode is connected to the first electrode. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在不降低其性能的情况下实现高频放大装置的成本降低和小型化。解决方案：该高频放大装置1包括具有输入端子和输出端子的高频放大器6，第一电容器17和第二电容器18.第一电容器17具有第一电极和第二电极，以及形成在第一电极和第二电极之间的第一绝缘膜，并且第一电极经由第一电感器14连接到输出端子，并且第二电极连接到地。第二电容器18具有由与第一和第二电极相同的材料制成的第三电极和第四电极，以及形成在第三电极和第四电极之间的第二绝缘膜，由相同的材料制成并具有厚度大致与第一绝缘膜相同，第三电极与第一电极连接。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2001197658A LOAD SELECTION/CUT-OFF SYSTEM 失效
公开(公告)号：JP2001197658A
公开(公告)日：2001-07-19
申请号：JP2000000573
申请日：2000-01-06
申请人： TOSHIBA CORP
发明人： KURIYAMA YASUHIKO
IPC分类号： H02B1/24 , H02H7/06
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable load selection/cut-off system which can be structured easily. SOLUTION: Data exchange is conducted by connecting the load selection/ cut-off units 101, 102, etc., discretely allocated for every load breaker and calculation of cut-off load and selection of preset output are also conducted for each load selection/cut-off unit 101, 102, etc., using the common data such as the priority of load selection/cut-off preset with a handy terminal 40, amount of power to be supplied with a power generator, a load power fetched in each load cut-off unit 101, 102, etc., and condition of the breaker or the like. Thereby, a load selection/cut-off system can be realized, which may be structured easily and assures higher reliability, in comparison with the existing system which uses a controller for arithmetic operations.

10. 发明专利

JPH11274167A Heterojunction bipolar transistor 失效
标题翻译：异相双极晶体管
公开(公告)号：JPH11274167A
公开(公告)日：1999-10-08
申请号：JP7160798
申请日：1998-03-20
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIYAMA TORU , HONGO SADAHITO , KURIYAMA YASUHIKO , NOZU TETSUO , TSUDA KUNIO , MORITSUKA KOHEI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/205 , H01L29/737
摘要： PROBLEM TO BE SOLVED: To suppress the drop in current amplification factor during current application caused by the recombination between electrons and holes, in a heterojunction bipolar transistor. SOLUTION: An n-type GaAs collector layer 11 and a p-type GaAs base layer 14 are formed on a GaAs substrate 11, and an n-type AlGaAs passivation layer 15 is formed on a base layer 14. Emitter contact layers 17 and 18 with sectional area smaller than that of the passivation layer 15 are formed on the passivation layer 15. A base electrode 16 is formed on the base layer 14 and on the flank of the passivation layer 15.
摘要翻译：要解决的问题：在异质结双极晶体管中，抑制由电子和空穴之间的复合导致的电流施加期间的电流放大因子的下降。解决方案：在GaAs衬底11上形成n型GaAs集电极层11和p型GaAs衬底层14，在基极层14上形成n型AlGaAs钝化层15.发射极接触层17和18 在钝化层15上形成具有小于钝化层15的截面面积的截面积。基底电极16形成在钝化层15的基底层14和侧面上。

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