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    • 7. 发明专利
    • AUTOMATIC DISCRIMINATION OF SINGLE CRYSTALLIZATION AND DEVICE FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL BY UTILIZATION OF THE METHOD
    • JP2000169288A
    • 2000-06-20
    • JP36187798
    • 1998-12-04
    • TOSHIBA CERAMICS CO
    • KANAI YUICHIMIURA HIROYUKIIWATA YASUYUKI
    • C30B15/26
    • PROBLEM TO BE SOLVED: To provide a method for automatically discriminating single crystallization, enabling the automatic discrimination of the single crystallization of a semi-conductor crystal in a seed process by detecting the appearance of a seam line by the treatment of images, and to provide a semiconductor single crystal production device utilizing the method. SOLUTION: This semiconductor single crystal production device by CZ method comprises a CCD cameral 21 for photographing a seed crystal 1 and a fused liquid surface 2 in a crucible 11 through a through-window 20, a device 24 for automatically discriminating the single crystallization, and a control device 25 for pulling up the single crystal. The device 24 for automatically discriminating the single crystallization calculates a distance between a horizontal standard position line preliminarily set in the photographed image and used for measuring the distance and the lowest end of the meniscus of the semiconductor crystal in the image photographed with the CCD camera 21 by an image treating method, and detects as the appearance of the seam line showing single crystallization, when the measured distance is not larger than a preliminarily set threshold value. The control device 25 for pulling up the single crystal controls the automatic transfer of the treating process of the semiconductor single crystal production device from a seed process to a neck process according to the discrimination result of the device 24 for automatically discriminating the single crystallization.