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1. 发明专利

JP2000193570A SAMPLE TREATING DEVICE FOR HIGHLY SENSITIVE ANALYSIS OF IMPURITIES IN SILICEOUS SAMPLE TO BE ANALYZED, AND ANALYZING METHOD USING THE SAME 失效
公开(公告)号：JP2000193570A
公开(公告)日：2000-07-14
申请号：JP28725998
申请日：1998-09-24
申请人： TOSHIBA CERAMICS CO
发明人： TANAKA MASAFUMI , TOKUTAKE FUMIO , SHIMANUKI KAZUHIKO
IPC分类号： G01N27/62 , G01N1/28
摘要： PROBLEM TO BE SOLVED: To make quantitatively analyzable a very small amt. of impurities in a siliceous material orginally extremely low in impurity content with high sensitivity. SOLUTION: The sample treating device 1 is formed so as to be capable of constituting a hermetically closed space system and has not only a storage part 3 of a soln. generating reactive decomposable vapor provided in its bottom part but also the analyzing sample housing part 4 consisting of a sample receiver 10 and a holding tray 20 arranged above the storage part in an isolated state and the sample receiver 10 of the analyzing sample housing part is equipped with a sample housing recessed part of which the upper surface effective caliber is 15-24 mm, the depth is 20-40 mm and the bottom part is formed into an inverted triangular-pyramidal shape of which the bottom leading end is rounded into a recessed curved surface shape and the holding tray 20 is formed so as to fix and hold the sample receiver 10 in a detachable manner.

2. 发明专利

JPH05319990A PRODUCTION OF GRANULAR SILICON RAW MATERIAL 失效
公开(公告)号：JPH05319990A
公开(公告)日：1993-12-03
申请号：JP15271092
申请日：1992-05-20
申请人： TOSHIBA CERAMICS CO
发明人： ARIGA SHOZO , TANAKA MASAFUMI
IPC分类号： C30B15/00 , C01B33/02 , C30B29/06 , H01L21/208
摘要： PURPOSE:To obtain a high-purity granular silicon raw material by subjecting a granular silicon raw material containing impurities to purifying treatment. CONSTITUTION:A dissolving treating liquid 4 capable of dissolving both silicon and silicon dioxide is introduced into a cylindrical container 1 housing granular polysilicon 2 having >=0.1mum grain diameter and all the granular polysilicon is kept in a substantially immersed state to carry out the dissolving and washing treatment. The discharge of the dissolving treating liquid and introduction of the wash liquid are performed while maintaining the substantially immersed state of the granular silicon. The granular polysilicon is washed and then dried. Thereby, the granular polysilicon in its housed state in the cylindrical container is subjected to the purifying treatment to produce the objective granular silicon raw material.

3. 发明专利

JP2003188222A SILICON WAFER ETCHING METHOD AND SURFACE LAYER ANALYZING METHOD FOR SILICON WAFER 审中-公开
公开(公告)号：JP2003188222A
公开(公告)日：2003-07-04
申请号：JP2001383034
申请日：2001-12-17
申请人： TOSHIBA CERAMICS CO
发明人： TANAKA MASAFUMI , MATSUDA KENJI , SUGIZAKI SHIGEAKI , TANIIKE SEIJI
IPC分类号： G01N27/62 , G01N21/31 , G01N33/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer etching method for uniformly etching a wafer surface to μm orders, for applying to an element having a high diffusion speed, even at a low temperature such as Cu, and further for quickly carrying out etching, while being suited for routine analyses. SOLUTION: In the silicon wafer etching method, the analysis surface of a silicon wafer is allowed to face the mixing solution of hydrofluoric acid and nitric acid, the silicon wafer is cooled from the rear of the analysis surface, by using a volatile coolant for allowing acid vapor to freeze and adhere to the analysis surface, and further the frozen acid is dissolved at a normal temperature for etching the analysis surface. Additionally, in the surface layer analyzing method, the quantity of a metal element is determined also, by using an inductively-coupled plasma mass spectrometer or a flameless atomic absorption apparatus with an acid droplet obtained by the silicon wafer etching method as a sample. COPYRIGHT: (C)2003,JPO

4. 发明专利

JP2003075408A Method and apparatus for analysis of metal element in solid sample 审中-公开
标题翻译：固体样品中金属元素分析的方法与装置
公开(公告)号：JP2003075408A
公开(公告)日：2003-03-12
申请号：JP2001270488
申请日：2001-09-06
申请人： Toshiba Ceramics Co Ltd , 東芝セラミックス株式会社
发明人： TANAKA MASAFUMI
IPC分类号： G01N27/62 , G01N21/31
摘要： PROBLEM TO BE SOLVED: To provide an analytical method for a metal element in a solid sample in which a sample aerosol is generated easily and in which the constitution of an analyzer is simple and to provide the analyzer for the analytical method.
SOLUTION: In the analytical method for the metal element in the solid sample, the solid sample S is heated inside a furnace 3, a metal component discharged from the solid sample S is introduced into an inductively coupled plasma mass spectrometer 1 together with a carrier gas, and the metal element is analyzed. The analyzer is used for the analytical method.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供容易产生样品气溶胶的固体样品中的金属元素的分析方法，其中分析仪的结构简单并且提供用于分析方法的分析仪。解决方案：在固体样品中金属元素的分析方法中，固体样品S在炉3内加热，从固体样品S排出的金属成分与载气一起引入电感耦合等离子体质谱仪1 ，分析金属元素。分析仪用于分析方法。

5. 发明专利

JP2002257787A QUANTITATIVE DETERMINATION METHOD FOR TRACE BORON 失效
公开(公告)号：JP2002257787A
公开(公告)日：2002-09-11
申请号：JP2001060318
申请日：2001-03-05
申请人： TOSHIBA CERAMICS CO
发明人： TANIIKE SEIJI , TANAKA MASAFUMI , TAKAHASHI MASATO
IPC分类号： G01N27/62 , G01N21/73 , H01J49/04
摘要： PROBLEM TO BE SOLVED: To provide a quantitative determination method for trace boron by ICP-MS capable of easily quantitatively determining boron contained in a semiconductor, a member for semiconductor manufacturing device or the like with higher sensitivity. SOLUTION: In this quantitative determination method for trace boron by high-frequency inductively coupled plasma-mass spectroscopy, lithium is added to a sample solution, and the sample solution is introduced by an electric heating vaporizer.

6. 发明专利

JP2002239480A POWDER CLEANING EQUIPMENT AND CLEANING METHOD 失效
公开(公告)号：JP2002239480A
公开(公告)日：2002-08-27
申请号：JP2001037260
申请日：2001-02-14
申请人： TOSHIBA CERAMICS CO
发明人： MATSUDA KENJI , TANAKA MASAFUMI , TOKUTAKE FUMIO , SUZUKI TAKASHI
IPC分类号： B08B3/04 , B08B3/10 , C03B20/00
摘要： PROBLEM TO BE SOLVED: To provide powder agitating and cleaning equipment and cleaning method which are low in a purification cost and are capable of cleaning the powder to high purity. SOLUTION: This powder cleaning equipment has a cleaning drum 21 which is formed to an inverted conical shape section 21a in its lower part, is formed to a cylindrical shape and into which the powder is housed and a cleaning liquid is supplied and a fluid supply port 23 which is disposed to constitute a tangent with the circular wall of the cleaning drum 21, is disposed near the inverted conical shape section 21a and into which the fluid supplied with a speed is admitted. The fluid supplied from the fluid supply port 23 forms swirling flow in the inverted conical shape section 21a and the powder is agitated by the fluid. The powder is thus cleaned by the cleaning liquid. And the cleaning method.

7. 发明专利

JP2002154895A SILICON SINGLE CRYSTAL PULLING DEVICE 失效
公开(公告)号：JP2002154895A
公开(公告)日：2002-05-28
申请号：JP2000345055
申请日：2000-11-13
申请人： TOSHIBA CERAMICS CO
发明人： ANDO MASAHIRO , TOKUTAKE FUMIO , TANAKA MASAFUMI , TANIIKE SEIJI
IPC分类号： C30B29/06 , C30B15/00 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a silicon single crystal pulling device capable of preventing the direct metal contamination mediated by the vapor phase of Si single crystal being grown. SOLUTION: A cylindrical tube 14 made of high purity quartz glass, which has a length ranges from the upper end of a pulling tube 1a to the vicinity of the surface of Si melt 10 in a crucible 3 and surrounds the Si single crystal 13 being grown, is arranged in a chamber 1.

8. 发明专利

JP2002039927A PARTIAL ANALYSIS METHOD FOR SURFACE LAYER OF SILICON WAFER 失效
公开(公告)号：JP2002039927A
公开(公告)日：2002-02-06
申请号：JP2000219359
申请日：2000-07-19
申请人： TOSHIBA CERAMICS CO
发明人： TANAKA HIDEKO , TANAKA MASAFUMI
IPC分类号： G01N27/62 , G01N1/28 , G01N33/00 , G01N33/20 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a partial analysis method, in which the concentration of impurities in only the desired part of a silicon wafer can be measured with high accuracy. SOLUTION: The silicon wafer is placed on the opening of a container, in which an acid mixed solution of hydrofluoric acid and nitric acid is put. The partial surface layer part, to be analyzed of the silicon wafer, is faced with the acid mixed solution. The silicon wafer is heated from the opposite direction of a face facing the acid mixed solution. Vapor is generated from the acid mixed solution. An ammonium silicofluoride thin film is generated by the vapor on the part surface layer part of the silicon wafer. The generated ammonium silicofluoride thin film is dissolved, heated and concentrated, it is heated, gasified and introduced so as to be analyzed by an ICP mass analyzer, and metal impurities are measured.

9. 发明专利

JP2000019084A DROPLET SUPPLY/COLLECTION DEVICE FOR ANALYZING SILICON WAFER SURFACE 失效
公开(公告)号：JP2000019084A
公开(公告)日：2000-01-21
申请号：JP20129598
申请日：1998-07-01
申请人： TOSHIBA CERAMICS CO
发明人： NAGAMINE YOSHINOBU , TANAKA MASAFUMI , TOKUTAKE FUMIO
IPC分类号： G01N1/28 , G01N33/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To automatically supply and collect a droplet by vertically arranging a cylindrical droplet collection pipe with a droplet take-in port at the lower end in the rear side in the rotary direction of a rotary stand vertically at the upper portion of the rotary stand so that it can elevate and move horizontally and incorporating a droplet supply/collection means (capillary) in the collection pipe. SOLUTION: A droplet collection pipe 3 is moved and a lower end is positioned directly above the center part of a silicon wafer 2 on a rotary stand 1, a solenoid valve 10 is switched and a required amount of HF system solution is dropped onto the wafer 2 through a liquid-feeding pipe 7 and a capillary 5, and then the solenoid valve 10 is switched, and the capillary 5 is connected to a breathing pipe 9. A solution dropped onto the wafer 2 reacts with an oxide film and is scattered while taking in impurities, and forms a droplet 12 at various locations. Then, when the collection pipe 3 is moved in the radial direction of the rotary stand 1 while rotating the rotary stand 1, the droplet 12 is taken into the collection pipe 3 from a droplet take-in port 4 and rises in the capillary 5, and is carried to an analysis device via a connection pipe 8. Static electricity being generated in the collection pipe 3 and the capillary 5 is discharged via the grounding wire.

10. 发明专利

JP2004055836A Device and method for inspecting semiconductor wafer, and device for surface treatment of semiconductor device 有权
公开(公告)号：JP2004055836A
公开(公告)日：2004-02-19
申请号：JP2002211489
申请日：2002-07-19
申请人： Toshiba Ceramics Co Ltd , Toshiba Corp , 東芝セラミックス株式会社 , 株式会社東芝
发明人： MUSHA HITOSHI , TANAKA MASAFUMI , SUGIZAKI SHIGEAKI
IPC分类号： H01L21/66 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor wafer inspecting device in which a wafer is fixed and generation of dust and static electricity is reduced and which has a high retrieval rate of a used chemical liquid although the device is simple and small, and to provide its inspecting method and a device for surface treatment of the semiconductor device.
SOLUTION: This semiconductor wafer inspecting device comprises a nozzle 8 for dropping the chemical liquid onto the semiconductor wafer W to decompose metallic contaminants attached to the wafer surface and for retrieving the chemical liquid after decomposing the metallic contaminants, a recognizing camera 10 for recognizing drips of the chemical liquid which have been fed from the nozzle and have decomposed the metallic contaminants on the semiconductor wafer, and a controller 16 in which the position and size of a drip of the chemical liquid recognized by the recognizing camera 10 are detected. If the drip size is larger than a reference value, the drip is directly sucked in, and if the drip size is smaller than the reference value, additional chemical liquid is fed to the drip so that the drip size becomes larger than the reference value before being sucked in by controlling the nozzle, etc.
COPYRIGHT: (C)2004,JPO

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