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1. 发明专利

DE112004000021T5 未知
公开(公告)号：DE112004000021T5
公开(公告)日：2005-07-28
申请号：DE112004000021
申请日：2004-05-19
申请人： TOKYO OHKA KOGYO CO LTD
发明人： MARUYAMA KENJI , KURIHARA MASAKI , MIYAGI KEN , NIIKURA SATOSHI , SHIMATANI SATOSHI , MASUJIMA MASAHIRO , NITTA KAZUYUKI , YAMAGUCHI TOSHIHIRO , DOI KOUSUKE
IPC分类号： G03C1/492 , G03F7/039
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.

2. 发明专利

JP2005010486A Method for forming resist pattern 审中-公开
标题翻译：形成电阻图案的方法
公开(公告)号：JP2005010486A
公开(公告)日：2005-01-13
申请号：JP2003174860
申请日：2003-06-19
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KURIHARA MASAKI , YAMAGUCHI TOSHIHIRO , NIIKURA SATOSHI
IPC分类号： G03F7/26 , G02F1/13 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern which is suitable for manufacturing a system LCD and which can suppress variations in the dimension of the resist pattern. SOLUTION: The method includes steps of: (1) forming an antireflection film on a support; (2) applying a positive photoresist composition on the antireflection film to form a coating film; (3) heating (pre-baking) the substrate with the above coating film formed thereon to form a resist film on the substrate; (4) selectively exposing the resist coating film by using a mask; and (5) developing the resist coating film after the selective exposure with an alkaline aqueous solution to simultaneously form a resist pattern for an integrated circuit having ≤2.0 μm pattern dimension and a resist pattern for a liquid crystal display part having over 2.0 μm pattern dimension on the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种形成适用于制造系统LCD并且可以抑制抗蚀剂图案的尺寸变化的抗蚀剂图案的方法。解决方案：该方法包括以下步骤：（1）在支撑体上形成抗反射膜; （2）在防反射膜上涂布正性光致抗蚀剂组合物以形成涂膜; （3）利用形成在其上的上述涂膜对基板进行加热（预烘烤），以在基板上形成抗蚀剂膜; （4）通过使用掩模选择性地曝光抗蚀剂涂膜; 和（5）在用碱性水溶液选择性曝光后显影抗蚀剂涂膜，同时形成具有2.0μm图案尺寸的集成电路的抗蚀剂图案和具有2.0μm以上图案尺寸的液晶显示部件的抗蚀图案在基板上。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004361637A Positive photoresist composition for manufacture of liquid crystal display (lcd) and method for forming resist pattern 审中-公开
标题翻译：用于制造液晶显示器（LCD）的正电子照相组合物和用于形成电阻图案的方法
公开(公告)号：JP2004361637A
公开(公告)日：2004-12-24
申请号：JP2003159620
申请日：2003-06-04
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KURIHARA MASAKI , YAMAGUCHI TOSHIHIRO , NIIKURA SATOSHI
IPC分类号： G03F7/004 , G03F7/022 , G03F7/023 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive photoresist composition which can improve the DOF (depth of focus) characteristics and to provide a method for forming a resist pattern.
SOLUTION: The positive photoresist composition for the manufacture of an LCD comprises: (A) an alkali-soluble resin; (B) a naphthoquinone diazide esterified product; (C) a phenolic hydroxyl group-containing compound expressed by general formula (III) and having ≤1,000 molecular weight; and (D) an organic solvent. In formula (III), each of R
21 to R
28 independently represents a hydrogen atom, halogen atom, 1-6C alkyl group, 1-6C alkoxy group or 3-6C cycloalkyl group, each of R
29 to R
32 independently represents a hydrogen atom or a 1-6C alkyl group, and each of e, f, h represents an integer 1 to 3, and m represents an integer 1 to 5.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以改善DOF（深度聚焦）特性的正性光致抗蚀剂组合物，并提供形成抗蚀剂图案的方法。解决方案：用于制造LCD的正性光致抗蚀剂组合物包括：（A）碱溶性树脂; （B）萘醌二叠氮化物酯化产物; （C）由通式（III）表示的具有≤1000分子量的含酚羟基化合物; 和（D）有机溶剂。在式（III）中，R 30和R 16中的每一个独立地表示氢原子，卤原子，1-6C烷基，1-6C烷氧基或3- 6C环烷基中，R 30和R 32中的每一个独立地表示氢原子或1-6C烷基，e，f，h各自表示整数1 至3，m表示1〜5的整数。（C）2005，JPO＆NCIPI

4. 发明专利

JP2007206425A Positive resist composition for thick film resist film formation, thick film resist laminate, and resist pattern forming method 有权
标题翻译：用于薄膜电阻膜形成的积极阻燃组合物，厚膜电阻层压板和耐蚀图案形成方法
公开(公告)号：JP2007206425A
公开(公告)日：2007-08-16
申请号：JP2006025770
申请日：2006-02-02
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NIIHORI HIROSHI , MASUJIMA MASAHIRO , YAMAGUCHI TOSHIHIRO , YOSHIZAWA SACHIKO
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046 , G11B5/3163 , Y10S430/122 , Y10S430/126 , Y10T428/265
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition for thick film resist film formation capable of forming a thick film resist pattern with good profile, a thick film resist laminate and a resist pattern forming method. SOLUTION: The positive resist composition for thick film resist film formation in a film thickness of 1-15 μm contains a resin component (A) containing a high molecular compound (A1) which has a constitutional unit (a1) derived from hydroxystyrene and a constitutional unit (a2) derived from an acrylic ester containing an acid-dissociable dissolution inhibiting group, and which has a mass average molecular weight of 20,000-50,000, an acid generator component (B) which contains an onium salt type acid generator having an anionic moiety represented by formula (I): R 4" SO 3 - , and which generates an acid upon exposure, and a nitrogen-containing organic compound (D) containing a tertiary aliphatic amine, wherein R 4" represents a 4C linear or branched alkyl or fluoroalkyl group. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够形成具有良好轮廓的厚膜抗蚀剂图案的厚膜抗蚀剂成膜的正性抗蚀剂组合物，厚膜抗蚀剂层压体和抗蚀剂图案形成方法。解决方案：厚度为1-15μm的厚膜抗蚀剂膜形成用正性抗蚀剂组合物含有含有高分子化合物（A1）的树脂组分（A），其具有源于羟基苯乙烯的结构单元（a1）和衍生自含有酸解离溶解抑制基团的丙烯酸酯并且其质均分子量为20,000-50,000的结构单元（a2），含有鎓盐型酸产生剂的酸产生剂组分（B），其具有由式（I）表示的阴离子部分：R“SP”4“，并且其在暴露时产生酸，含有叔脂族胺的含有机化合物（D），其中R“SP”4“表示4C直链或支链烷基或氟代烷基。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2005010753A Positive type photoresist composition for manufacturing system lcd, and method for forming resist pattern 审中-公开
标题翻译：用于制造系统LCD的正型类型光电组合物和用于形成电阻图案的方法
公开(公告)号：JP2005010753A
公开(公告)日：2005-01-13
申请号：JP2004131393
申请日：2004-04-27
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KURIHARA MASAKI , YAMAGUCHI TOSHIHIRO , NIIKURA SATOSHI
IPC分类号： G03F7/022 , G02F1/1368 , G03F7/023
摘要： PROBLEM TO BE SOLVED: To provide a positive type photoresist composition with which a resist pattern excellent in adhesion to a substrate is formed and which is suited for the manufacture of a system LCD (liquid crystal display), and provide a method for forming the resist pattern. SOLUTION: The positive type photoresist composition for manufacturing an LCD comprising an integrated circuit and an LCD part formed on the substrate is characterized by containing an esterification reaction product of a polyphenol compound with 1,000 ≥ molecular weight, which has at least two benzene rings in a molecule wherein at least two hydroxy groups are bonded to at least one of the benzene rings, and a 1,2-naphthoquinonediazido sulfonyl compound. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种正型光致抗蚀剂组合物，其形成具有优异的与基板的粘附性的抗蚀剂图案，并且适用于制造系统LCD（液晶显示器），并提供一种方法形成抗蚀剂图案。解决方案：用于制造包括集成电路和形成在基板上的LCD部件的LCD的正型光致抗蚀剂组合物的特征在于含有具有1,000≥分子量的多酚化合物的酯化反应产物，其具有至少两个苯其中至少两个羟基与至少一个苯环键合的分子中的环和1,2-萘醌二叠氮基磺酰基化合物。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005010487A Method for forming resist pattern 审中-公开
标题翻译：形成电阻图案的方法
公开(公告)号：JP2005010487A
公开(公告)日：2005-01-13
申请号：JP2003174861
申请日：2003-06-19
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KURIHARA MASAKI , YAMAGUCHI TOSHIHIRO , NIIKURA SATOSHI
IPC分类号： G03F7/11 , G02F1/1345 , G03F7/20 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, which is suited for the manufacture of a system LCD (liquid crystal display) and with which variation in a resist pattern dimension is suppressed. SOLUTION: The method for forming the resist pattern includes a step to form a paint film by applying a positive type photoresist composition on a substrate (1), a step to form a resist coat on the substrate by heat treating (prebaking) the substrate with the paint film formed thereon (2), a step to form a reflection preventing film on the resist coat (3), a step to selectively expose the resist coat by using a mask on which both mask patterns for forming a resist pattern with 2.0 μm or less dimension and for forming a resist pattern with more than 2.0 μm dimension are drawn (4), a step to remove the reflection preventing film after the selective exposure (5) and a step to develop the selectively exposed resist coat using an aqueous alkali solution (6). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种适用于制造LCD（液晶显示器）并且抑制抗蚀剂图案尺寸的变化的形成抗蚀剂图案的方法。解决方案：用于形成抗蚀剂图案的方法包括通过在基板（1）上施加正型光致抗蚀剂组合物来形成漆膜的步骤，通过热处理（预烘烤）在基板上形成抗蚀剂涂层的步骤，其上形成有涂膜的基板（2），在抗蚀剂涂层（3）上形成反射防止膜的步骤，通过使用掩模形成抗蚀剂图案的掩模图案来选择性地暴露抗蚀剂涂层的步骤绘制2.0μm或更小的尺寸并形成具有大于2.0μm尺寸的抗蚀剂图案（4），在选择性曝光之后除去反射防止膜的步骤（5），以及使用碱水溶液（6）。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2012177774A Positive resist composition and method for forming resist pattern 有权
标题翻译：积极抗性组合物和形成耐药模式的方法
公开(公告)号：JP2012177774A
公开(公告)日：2012-09-13
申请号：JP2011040168
申请日：2011-02-25
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SOMEYA KAZUYA , YAMAGUCHI TOSHIHIRO , AOKI TOMOSABURO
IPC分类号： G03F7/004 , G03F7/023 , G03F7/16 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition that can be suitably used for a discharge nozzle type coating method and to provide a method for forming a resist pattern using the positive resist composition.SOLUTION: The positive resist composition is used for a discharge nozzle type coating method including a step of applying a resist composition on the entire coating surface of a substrate by relatively moving a discharge nozzle and the substrate. The positive resist composition comprises an alkali-soluble novolac resin (A) and a naphthoquinone diazide group-containing compound (C), both dissolved in an organic solvent (S) containing a diol (S1) having 6 or more carbon atoms. The method for forming a resist pattern includes steps of: applying the positive resist composition on the entire coating surface of a support body by relatively moving a discharge nozzle and the support body; forming a resist film on the support body; exposing the resist film; and developing the resist film with an alkali to form a resist pattern.
摘要翻译：要解决的问题：提供可适用于喷嘴型涂布方法的正性抗蚀剂组合物，并提供使用正性抗蚀剂组合物形成抗蚀剂图案的方法。解决方案：正型抗蚀剂组合物用于排放喷嘴型涂布方法，包括通过相对移动排出喷嘴和基材将抗蚀剂组合物涂覆在基材的整个涂覆表面上的步骤。正型抗蚀剂组合物包含溶解在含有碳原子数6以上的二醇（S1）的有机溶剂（S）中的碱溶性酚醛清漆树脂（A）和含萘醌二叠氮基的化合物（C）。形成抗蚀剂图案的方法包括以下步骤：通过相对移动排出喷嘴和支撑体，将正性抗蚀剂组合物施加在支撑体的整个涂覆表面上; 在支撑体上形成抗蚀剂膜; 曝光抗蚀膜; 并用碱显影抗蚀剂膜以形成抗蚀剂图案。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2007248727A Positive resist composition for thick-film resist film formation, thick-film resist laminate and resist pattern forming method 有权
标题翻译：用于薄膜电阻膜形成的抗静电组合物，薄膜层压板和抗蚀剂图案形成方法
公开(公告)号：JP2007248727A
公开(公告)日：2007-09-27
申请号：JP2006070927
申请日：2006-03-15
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NIIHORI HIROSHI , MASUJIMA MASAHIRO , YAMAGUCHI TOSHIHIRO , YOSHIZAWA SACHIKO
IPC分类号： G03F7/004 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition for thick-film resist film formation, capable of reducing viscosity and forming a thick-film resist film of 1-15 μm film thickness, having proper in-plane uniformity of film thickness, and to provide a thick-film resist laminate and a resist pattern forming method using the positive resist composition. SOLUTION: The positive resist composition for thick-film resist film formation in 1-15 μm film thickness is prepared, by dissolving in an organic solvent (S) a resin component (A), of which the alkali solubility increases under the action of an acid and an acid generator component (B) which generates acid upon exposure to light, wherein the organic solvent (S) is a mixed solvent that is 10-95 mass% of propylene glycol monomethyl ether and 5-90 mass% of another solvent (S2). COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够降低粘度并形成厚度为1-15μm的厚膜抗蚀剂膜的厚膜抗蚀剂膜形成用正性抗蚀剂组合物，具有适当的膜内平面均匀性并提供厚膜抗蚀剂层压体和使用正性抗蚀剂组合物的抗蚀剂图案形成方法。解决方案：通过将有机溶剂（S）溶解在有机溶剂（S）中，在其中碱溶解度增加的树脂组分（A）中，制备厚度为1-15μm的厚膜抗蚀剂膜的正型抗蚀剂组合物暴露于光下产生酸的酸和酸产生剂组分（B）的作用，其中有机溶剂（S）是丙二醇单甲醚的10-95质量％的混合溶剂和5-90质量％的另一种溶剂（S2）。版权所有（C）2007，JPO＆INPIT

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