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1. 发明专利

AU2003274760A1 CHEMICAL-AMPLIFICATION POSITIVE-WORKING PHOTORESIST COMPOSITION 未知
公开(公告)号：AU2003274760A1
公开(公告)日：2004-05-25
申请号：AU2003274760
申请日：2003-10-27
申请人： TOKYO OHKA KOGYO CO LTD
发明人： NITTA KAZUYUKI , MOTOIKE NAOTO
IPC分类号： G03F7/039 , G03C1/492 , H01L21/027
摘要： Disclosed is a chemical-amplification positive-working photoresist composition having compliability to various types of resist patterns with excellent sensitivity and pattern resolution exhibiting high exposure margin and focusing depth latitude. Of the essential components including (A) a resin capable of being imparted with increased alkali-solubility by interacting with an acid and (B) an acid-generating compound, the component (A) is a combination of (a1) a first resin and (a2) a second resin each as a hydroxystyrene-based copolymeric resin partially substituted for the hydroxyl hydrogen atoms with acid-dissociable solubility-reducing substituent groups. Characteristically, in addition to the difference in the mass-average molecular weight being high for (a1) and low for (a2), the acid-dissociability of the substituents in the (a1) resin is higher than that in the (a2) resin as in a combination of 1-ethoxyethyl for (a1) and tetrahydropyranyl for (a2).

2. 发明专利

JP2014021286A Resist composition, method for forming resist pattern, and compound 有权
标题翻译：耐蚀组合物，形成耐火图案的方法和化合物
公开(公告)号：JP2014021286A
公开(公告)日：2014-02-03
申请号：JP2012160049
申请日：2012-07-18
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KAWAKAMI AKINARI , UTSUMI YOSHIYUKI , MOTOIKE NAOTO
IPC分类号： G03F7/004 , C07C25/18 , C07C309/12 , C07C381/12 , C07D307/33 , C08F220/28 , C09K3/00 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a compound useful for a resist composition, a resist composition containing the compound, and a method for forming a resist pattern by using the resist composition.SOLUTION: The resist composition comprises a base component (A) showing changes in the solubility with a developing solution by an action of an acid and a compound (D0) expressed by general formula (d0-1). The method for forming a resist pattern is carried out by using the composition. In the formula, Yrepresents a single bond or a divalent connecting group; Vrepresents a single bond or a divalent cyclic group optionally having a substituent; Rrepresents a monovalent group expressed by formula (r-d0) (where * represents a coupling bond); Rrepresents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms optionally having a substituent; n is 0 or 1, and when n is 0, Vis not a single bond; m is an integer of 1 or more; and Mrepresents an organic cation having a valence of m.
摘要翻译：要解决的问题：提供可用于抗蚀剂组合物的化合物，含有该化合物的抗蚀剂组合物，以及通过使用抗蚀剂组合物形成抗蚀剂图案的方法。溶胶：抗蚀剂组合物包含显示出变化的基础组分（A）在通过酸和由通式（d0-1）表示的化合物（D0））的作用下与显影液的溶解度。通过使用该组合物进行形成抗蚀剂图案的方法。在该式中，Y表示单键或二价连接基团; V表示单键或任选具有取代基的二价环状基团; R表示由式（r-d0）表示的单价基团（其中*表示偶联键）; R表示氢原子或任选具有取代基的碳原子数为1〜5的烷基; n为0或1，当n为0时，Vis不为单键; m为1以上的整数，并且M表示具有m价的有机阳离子。

3. 发明专利

JP2014006552A Compound, resist composition and method for forming resist pattern 有权
标题翻译：化合物，抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：JP2014006552A
公开(公告)日：2014-01-16
申请号：JP2013194687
申请日：2013-09-19
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： HANEDA HIDEO , UTSUMI YOSHIYUKI , MOTOIKE NAOTO , SUZUKI KENTA
IPC分类号： G03F7/004 , C07C309/19 , C07C381/12 , C08F220/26 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To provide a resist composition containing an acid generator comprising a compound that is suitable as an acid generator for a resist composition, and a method for forming a resist pattern using the resist composition.SOLUTION: The resist composition comprises: a base material component (A) showing an increase in the solubility with an alkali developing solution by an action of an acid; and an acid generator component (B) containing an acid generator (B1) comprising a compound expressed by the general formula (b1-1) and generating an acid by exposure. In the formula, R" to R" each independently represent an aryl group or an alkyl group; any two in R" to R" may be bonded to each other together with a sulfur atom in the formula to form a ring; at least one in R" to R" is a substituted aryl group in which a part of or all hydrogen atoms are substituted with an alkoxyalkyloxy group or an alkoxycarbonylalkyloxy group; Rrepresents a cyclic alkyl group having 4 to 20 carbon atoms and having an oxygen atom as a substituent; and n' represents 0 or 1.
摘要翻译：要解决的问题：提供含有酸产生剂的抗蚀剂组合物，其包含适合作为抗蚀剂组合物的酸发生剂的化合物，以及使用该抗蚀剂组合物形成抗蚀剂图案的方法。溶胶：抗蚀剂组合物包含：基材成分（A）通过酸的作用显示与碱性显影液的溶解度增加; 以及含有由通式（b1-1）表示的化合物和通过曝光产生酸的酸产生剂（B1）的酸发生剂成分（B）。在该式中，R“至R”各自独立地表示芳基或烷基; R“至R”中的任何两个可以与式中的硫原子彼此键合形成环; R“至R”中的至少一个是其中一部分或全部氢原子被烷氧基烷氧基或烷氧基羰基烷氧基取代的取代芳基; R表示具有4〜20个碳原子并具有氧原子作为取代基的环状烷基; 并且n'表示0或1。

4. 发明专利

JP2010120924A Resist composition, resist pattern-forming method, compound, and acid generator 有权
标题翻译：耐腐蚀组合物，抗菌图案形成方法，化合物和酸发生器
公开(公告)号：JP2010120924A
公开(公告)日：2010-06-03
申请号：JP2009123095
申请日：2009-05-21
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KAWAKAMI AKINARI , UTSUMI YOSHIYUKI , SESHIMO TAKEHIRO , NAKAMURA TAKESHI , MOTOIKE NAOTO , SHIMIZU HIROAKI , MATSUZAWA KENSUKE , HANEDA HIDEO
IPC分类号： C07C381/12 , C07C309/04 , C07C309/17 , C09K3/00 , G03F7/004 , G03F7/039
CPC分类号： G03F7/0045 , C07C309/09 , C07C309/10 , C07C309/17 , C07C311/48 , C07C311/51 , C07C317/04 , C07C317/10 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D307/92 , C07D307/94 , C07D493/18 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/12 , Y10S430/121 , Y10S430/122
摘要： PROBLEM TO BE SOLVED: To provide a new compound useful as an acid generator for resist compositions, to provide an acid generator consisting of the compound, to provide such a resist composition containing the acid generator, and a resist pattern-forming method using the resist composition, to provide such a compound useful as an acid generator to be used in the resist composition, and to provide such an acid generator. SOLUTION: The resist composition includes (A) a base material component variable in solubility to an alkali developer solution by the action of an acid and (B) an acid-generating component which generates an acid on exposure to light; wherein the resist composition contains an acid generator (B1) consisting of a compound represented by general formula (b1-11) (wherein, at least one of R 7 " to R 9 " is a substituted aryl group having a group represented by general formula (I) as the substituent; and R f in the general formula (I) is a fluoroalkyl group). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种新的化合物，可用作抗蚀剂组合物的酸发生剂，提供由化合物组成的酸发生剂，以提供含有酸产生剂的抗蚀剂组合物和抗蚀剂图案形成方法使用抗蚀剂组合物，提供可用作抗蚀剂组合物中的酸产生剂的这种化合物，并提供这种酸产生剂。抗蚀剂组合物包括（A）通过酸的作用可溶于碱性显影剂溶液的基材成分和（B）在曝光时产生酸的酸产生成分; 其中，所述抗蚀剂组合物含有由通式（b1-11）表示的化合物（其中，R 7 “〜R 9 “是具有由通式（I）表示的基团作为取代基的取代芳基，通式（I）中的R”SP“是氟代烷基）。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009244352A Resist composition and a method of forming a resist pattern 有权
标题翻译：电阻组合和电阻形成方法
公开(公告)号：JP2009244352A
公开(公告)日：2009-10-22
申请号：JP2008088077
申请日：2008-03-28
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： MOTOIKE NAOTO , HAYASHI TOMOHIKO , KAKINOYA YASUHIKO
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition and a resist pattern forming method, forming a resist pattern of a favorable form. SOLUTION: This resist composition contains a base material component (A) whose solubility to an alkaline liquid developer is changed by action of acid and an acid generating agent component (B) adapted to generate acid by exposure, wherein the acid generating agent component (B) contains an acid generating agent (B1) expressed by a general formula (Ia) and having an anion part and an acid generating agent (B2) expressed by a general formula (IIb) and having a cationic part (the acid generating agent (B1) and the acid generating agent (B2) are different from each other). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供抗蚀剂组合物和抗蚀剂图案形成方法，形成有利形式的抗蚀剂图案。解决方案：该抗蚀剂组合物包含其碱性液体显影剂的溶解度通过酸的作用而变化的基材组分（A）和适于通过暴露产生酸的酸产生剂组分（B），其中酸产生剂组分（B）含有由通式（Ia）表示并具有由通式（IIb）表示的具有阴离子部分和酸产生剂（B2）并具有阳离子部分（产生酸）的酸产生剂（B1）药剂（B1）和酸生成剂（B2）的含量不同）。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2004151486A Chemically amplification type positive resist composition 有权
公开(公告)号：JP2004151486A
公开(公告)日：2004-05-27
申请号：JP2002317934
申请日：2002-10-31
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NITTA KAZUYUKI , MOTOIKE NAOTO
IPC分类号： G03F7/039 , G03C1/492 , H01L21/027
CPC分类号： G03F7/0392
摘要： PROBLEM TO BE SOLVED: To provide a chemical amplification type positive resist composition which can provide excellent sensitivity, definition and profile shapes and has a great exposure margin and width in the depth of focus. SOLUTION: The chemical amplification type positive resist composition contains (A) a resin composition which consists of a copolymer containing a hydroxystyrene unit and a hydroxystyrene unit substituted with an acid dissociable dissolution inhibiting group and which is increased in alkaline solubility by the action of an acid and (B) an acid generating component. A mixture composed of (a 1 ) a copolymer containing ≤25mol% hydroxystyrene unit substituted with the acid dissociable dissolution inhibiting group and (a 2 ) ≥35mol% hydroxystyrene unit substituted with the acid dissociable dissolution inhibiting group more hardly dissociable than the acid dissociable dissolution inhibiting group of (a 1 ), both of which are 1 to 4 in molecular weight distributions (Mw/Mn) are used as the component (A). COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2013164509A Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：JP2013164509A
公开(公告)日：2013-08-22
申请号：JP2012027462
申请日：2012-02-10
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社 , Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MOTOIKE NAOTO , OMORI KATSUMI , NAMITO TOSHIAKI , YAEGASHI HIDETAMI , KOYAMA KENICHI
IPC分类号： G03F7/40 , G03F7/039 , H01L21/027
CPC分类号： G03F7/2026 , G03F7/0045 , G03F7/405
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method.SOLUTION: The pattern forming method comprises: a first pattern forming step of forming a first pattern as a resist by applying a resist composition on a support body to form a resist film, then exposing and developing the resist film; a film forming step of forming a SiOfilm on the surface of the first pattern and the support body; an etching step of etching the SiOfilm to leave the SiOfilm only on a side wall portion of the first pattern; and a second pattern forming step of removing the first pattern and forming a second pattern in the SiOfilm. The resist composition comprises: a base material component (A) the solubility of which with a developing solution changes by an action of an acid; and an acid generator component (B) that generates an acid by exposure. The base material component (A) includes a resin component (A1) having a structural unit (a1') including an acid decomposable group which shows increase in polarity by an action of an acid and which has no polycyclic group.
摘要翻译：要解决的问题：提供一种图案形成方法。解决方案：图案形成方法包括：第一图案形成步骤，通过在支撑体上施加抗蚀剂组合物形成第一图案作为抗蚀剂以形成抗蚀剂膜，然后暴露并开发抗蚀膜; 在第一图案和支撑体的表面上形成SiO膜的成膜步骤; 蚀刻步骤，蚀刻SiO膜以仅在第一图案的侧壁部分上留下SiO膜; 以及第二图案形成步骤，去除所述第一图案并在所述SiO膜中形成第二图案。抗蚀剂组合物包括：其与显影液的溶解度通过酸的作用而改变的基材组分（A）和通过曝光产生酸的酸发生剂组分（B）。基材成分（A）具有含有酸分解性基团的结构单元（a1'）的树脂成分（A1），其通过酸的作用显示极性增加，且不具有多环基。

8. 发明专利

JP2013127577A Resist composition and resist pattern formation method 有权
标题翻译：电阻组合和电阻形成方法
公开(公告)号：JP2013127577A
公开(公告)日：2013-06-27
申请号：JP2011277525
申请日：2011-12-19
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NAMITO TOSHIAKI , MOTOIKE NAOTO
IPC分类号： G03F7/039 , C08F20/12 , C09K3/00 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition and a resist pattern formation method that can form a resist pattern with a large light exposure margin and reduced roughness.SOLUTION: There is provided a resist composition containing: a base component (A) having solubility characteristics to a developing solution that is changed by the action of an acid; and an acid generator composition (B) that generates an acid by being exposed to light, the base component (A) containing a resin component (A1) having a constituent unit (a1) containing an acid decomposition group of which polarity is increased by the action of an acid, the unit (a1) containing a composition (a10) having a specific acid-dissociative polycyclic hydrocarbon group, and the generator composition (B) containing an acid generator (B1) formed of a compound expressed by a general formula (b1-1) where Qdenotes a divalent linking group or single bond, Ydenotes an alkylene group or fluorinated alkylene group, O denotes an oxygen atom, Xdenotes a 3-30C cyclic group, and Ais organic cation. [Chemical Formula 1]
摘要翻译：要解决的问题：提供可以形成具有大的曝光裕度和降低的粗糙度的抗蚀剂图案的抗蚀剂组合物和抗蚀剂图案形成方法。解决方案：提供一种抗蚀剂组合物，其含有：通过酸的作用改变显影液的溶解度特性的碱成分（A）和含有具有含有酸性分解基团的构成单元（a1）的树脂成分（A1）的基础成分（A），所述酸成分（B）的极性增加了所述酸分解基团含有具有特定酸解离性多环烃基的组合物（a10）的单元（a1）和含有由通式（1）表示的化合物形成的酸产生剂（B1）的发生剂组合物（B） b1-1）其中Q 1 表示二价连接基团或单键，Y 1表示亚烷基或氟化亚烷基，O表示氧原子，X 3表示3-30C环状基团，A + 是有机阳离子。 [化学式1]版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2010211073A Positive resist composition and a method of forming a resist pattern 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：JP2010211073A
公开(公告)日：2010-09-24
申请号：JP2009058738
申请日：2009-03-11
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KAKINOYA YASUHIKO , MOTOIKE NAOTO
IPC分类号： G03F7/039 , C08F20/38 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0045
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition capable of forming a resist pattern of satisfactory shape, and a resist pattern forming method. SOLUTION: The composition contains a base component (A) the solubility to alkali developing solution of which is increased by the effect of acid and an acid generator component (B) which generates acid by exposure. The component (A) contains a polymer compound (A1) having a structural unit (a0) including "a cyclic group containing -SO 2 -" at the terminal of a side chain and including an acid dissociable dissolution inhibiting group in the structure, and the component (B) contains an acid generator (B1) composed of a compound represented by general formula (b1-1), wherein R 0 is 1-12C hydrocarbon group which may have a substituent, wherein fluorine atom is not bonded to carbon atom adjacent to sulfur atom in -SO 3 - , and Z + is organic cation. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够形成令人满意的形状的抗蚀剂图案的正性抗蚀剂组合物和抗蚀剂图案形成方法。解决方案：组合物含有碱成分（A），其碱显影溶液的溶解度通过酸和酸产生剂组分（B）的作用而增加，其通过暴露产生酸。组分（A）含有在侧链末端具有包含“-SO 2 SB 2 - >的环状基团”的结构单元（a0）的高分子化合物（A1），并且包含酸可离解溶解组分（B）含有由通式（b1-1）表示的化合物组成的酸产生剂（B1），其中R 0 为1-12℃烃基，可以具有取代基，其中氟原子不与-SO 3 - 中的硫原子上的碳原子键合，并且Z + 是有机的阳离子。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009191055A Resist composition, resist pattern forming method, new compound and acid generator 有权
标题翻译：抗菌组合物，抗性图案形成方法，新化合物和酸发生器
公开(公告)号：JP2009191055A
公开(公告)日：2009-08-27
申请号：JP2008036734
申请日：2008-02-18
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： UTSUMI YOSHIYUKI , HANEDA HIDEO , MOTOIKE NAOTO , HAYASHI TOMOHIKO , KAKINOYA YASUHIKO
IPC分类号： C07C311/51 , C07C381/12 , C09K3/00 , G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition, to provide a resist pattern forming method using the resist composition, to provide a new compound useful as an acid generator, and to provide an acid generator. SOLUTION: The resist composition comprising a substrate ingredient (A) varying solubility to an alkali developer by acid action and an acid generator component (B) generating an acid by being exposed to light, is provided, wherein the acid generator component (B) includes an acid generator (B1) comprising a compound represented by general formula (b1-1). In the formula, X is a bivalent coupling group or a single bond; R is H, F, an alkyl group or a fluorinated alkyl group; R' is an aliphatic group; n is an integer of 1-10; and A + is an organic cation. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种抗蚀剂组合物，以提供使用该抗蚀剂组合物的抗蚀剂图案形成方法，以提供可用作酸产生剂的新化合物，并提供酸产生剂。提供了包含通过酸作用改变对碱性显影剂的溶解性的底物成分（A）和通过曝光产生酸的酸产生剂组分（B）的抗蚀剂组合物，其中酸产生剂组分 B）包括含有通式（b1-1）表示的化合物的酸发生剂（B1）。在该式中，X为二价键或单键; R是H，F，烷基或氟化烷基; R'是脂族基团; n为1-10的整数; 而A + 是有机阳离子。版权所有（C）2009，JPO＆INPIT

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