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1. 发明专利

AU1428302A Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring 未知
公开(公告)号：AU1428302A
公开(公告)日：2002-05-27
申请号：AU1428302
申请日：2001-11-13
申请人： TOKYO ELECTRON LTD
发明人： YAMASAKI HIDEAKI , TACHIBANA MITSUHIRO , OKUBO KAZUYA , SUZUKI KENJI , KAWANO YUMIKO
IPC分类号： C23C16/30 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52
摘要： A metal film forming method, includes the steps of (a) (s 13 , s 15 ) supplying a plural kinds of ingredient gases to a base barrier film ( 3 ) in sequence, wherein at least one of the gases includes a metal, and (b) (s 14 , s 16 ) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film ( 5 ) of the metal is formed on the base barrier film ( 3 ).

2. 发明专利

JP2007046134A Method for forming metallic film, and recording medium with program recorded therein 审中-公开
标题翻译：形成金属膜的方法和记录有程序的介质
公开(公告)号：JP2007046134A
公开(公告)日：2007-02-22
申请号：JP2005233819
申请日：2005-08-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TACHIBANA MITSUHIRO , SUGIURA MASAHITO , NISHIMORI TAKASHI , SATO KOICHI
IPC分类号： C23C16/44 , C23C16/08 , H01L21/285 , H01L21/768
CPC分类号： C23C16/14 , C23C16/45523 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： PROBLEM TO BE SOLVED: To form a metallic film having resistance lower than that of the conventional one by controlling its crystal structure.
SOLUTION: The method for producing a metallic film comprises: a step where a metallic raw material gas such as WF
6 gas is fed; and a step where a hydrogen compound gas such as SiH
4 gas is fed are repeatedly performed alternately with a purge step where inert gas such as Ar gas and N
2 gas is fed interposed, thus a first tungsten film deposition step where an amorphous material-containing first tungsten film is deposited, and a second tungsten film deposition step where the above WF
6 gas and reducing gas such as H
2 gas are simultaneously fed to the surface of the first tungsten film so as to deposit a second tungsten film are comprised in the method. By changing the performing time of the purge step after the step of feeding the SiH
4 gas, the ratio of the amorphous material comprised in the first tungsten film is controlled.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过控制其晶体结构来形成具有比常规电阻低的电阻的金属膜。解决方案：金属膜的制造方法包括：供给诸如WF 6气体的金属原料气体的步骤; 并且在进行惰性气体例如Ar气体和N 2气体的吹扫步骤中交替地交替进行诸如SiH 4 SB气体的氢化合物气体的步骤插入，因此沉积含无定形材料的第一钨膜的第一钨膜沉积步骤和第二钨膜沉积步骤，其中将上述WF 6 SB 6气体和还原气体如H 2气体同时供给到第一钨膜的表面，以便沉积第二钨膜。通过在进料SiH 4 SB气体的步骤之后改变吹扫步骤的执行时间，控制包含在第一钨膜中的非晶材料的比例。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2002129329A METHOD FOR FORMING TUNGSTEN FILM 失效
公开(公告)号：JP2002129329A
公开(公告)日：2002-05-09
申请号：JP2000325658
申请日：2000-10-25
申请人： SONY CORP , TOKYO ELECTRON LTD
发明人： NAGAOKA KOJIRO , KURIHARA HISAAKI , TACHIBANA MITSUHIRO , MATSUDA TSUKASA
IPC分类号： C23C16/14 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a tungsten film with a low temperature CVD method(chemical-vapor deposition method), while completely or nearly preventing abnormal crystal growth. SOLUTION: This method includes carrying out two processes in a same chamber, one of which is a process of forming tungsten film 44 with the CVD, and the other of which is a treating process with a silane based gas on the surface on which the tungsten film 44 is to be formed, before the tungsten film forming process. The method selects a silane based treating condition in the surface treating process so as to make a product of silane partial pressure [Pa] and treating time [second] be 4000 Pa.second or more and 40000 Pa.second or less. Then the tungsten film is formed completely or nearly without generation of abnormal crystal growth.

4. 发明专利

JP2001152341A DEVICE AND METHOD FOR DETECTING END POINT OF CLEANING 失效
公开(公告)号：JP2001152341A
公开(公告)日：2001-06-05
申请号：JP33643299
申请日：1999-11-26
申请人： NEC CORP , TOKYO ELECTRON LTD
发明人： ITO NATSUKO , MORIYA TAKESHI , UESUGI FUMIHIKO , KATO YOSHINORI , AOMORI MASARU , MORIYA SHUJI , TACHIBANA MITSUHIRO
IPC分类号： H01L21/302 , C23C16/44 , C23C16/52 , G01N21/49 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for detecting the end point of cleaning which can detect the end point of the cleaning treatment to remove the deposits on the inner wall or the like of a reaction chamber with excellent accuracy. SOLUTION: A reaction chamber 1 containing cluster clouds formed through the reaction of the reaction product gas generated by the reaction between a part of the adhered stuff and the cleaning gas during the cleaning treatment, in the vapor phase, and separation particles which are a part of the adhered stuff separated from an inner wall due to the reduction in adhesion resulting from the formation of the cluster clouds (the particle size of the separation particles is larger than the particles size of the cluster clouds) is irradiated with laser beam 4, the cluster clouds and the separation particles 2 are measured by the laser beam scattering method, and the cleaning end point is judged as the time point of time when no deposits are present, and any cluster clouds or separation particles are observed.

5. 发明专利

JP2000200762A MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURE DEVICE 失效
公开(公告)号：JP2000200762A
公开(公告)日：2000-07-18
申请号：JP23668799
申请日：1999-08-24
申请人： TOKYO ELECTRON LTD
发明人： YAMAZAKI HIDEAKI , YONEZAWA SATOSHI , ARIMA SUSUMU , KOUNO YUMIKO , TACHIBANA MITSUHIRO , HOSODA KEIZO
IPC分类号： H01L29/78 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To form a nitride tungsten film whose adhesive strength with a base is high by bringing first raw material gas into contact with an object to be processed before the nitride tungsten film is formed. SOLUTION: For forming a nitride tungsten WNx film on a semiconductor wafer W by using first raw material gas containing a tungsten atom, WF6 gas, for example, and second raw material gas containing a nitrogen atom, NH3 gas, for example, WF6 gas is brought into contact with the surface of the semiconductor wafer W before the WNx film is formed. Thus, WF6 gas and Ar gas are individually supplied into a chamber 20 from a shower head 10 by a prescribed flow rate for prescribed time before the WNx film is formed in a state where the shower head 10 and the chamber 20 are set to a prescribed temperature. The processing pressure of the semiconductor wafer W is set to prescribed one, and the surface processing of a polysilicon film by WF6 gas is executed. Thus, adhesive strength of the WNx film to the semiconductor wafer W is improved and the WNx film is prevented from being peeled from the semiconductor wafer W in a thermal processing process after the film is formed.

6. 发明专利

JP2000178735A METHOD OF FORMING TUNGSTEN FILM 失效
公开(公告)号：JP2000178735A
公开(公告)日：2000-06-27
申请号：JP37598198
申请日：1998-12-18
申请人： TOKYO ELECTRON LTD
发明人： ISHIZUKA HODAKA , TACHIBANA MITSUHIRO
IPC分类号： H01L21/768 , C23C16/08
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a tungsten film to reduce the specific resistance of the film. SOLUTION: When a tungsten film 50 is to be formed on the surface of the body W to be treated in a vacuum treating device, this method includes the following processes. The processes are, a seed crystal growing process to grow a tungsten seed crystal 48 on the surface of the body W in the presence of a film-forming gas containing a tungsten element, a boron exposing process to expose the treated body to an atmosphere of a gas containing boron in a short time after the first process, and a tungsten film forming process to grow the seed crystal to form a tungsten film in the presence of a film-forming gas containing a tungsten element. Thereby, the specific resistance of the tungsten film can be decreased.

7. 发明专利

JPH09263453A ALUMINUM NITRIDE SUBSTRATE FOR SEMICONDUCTOR PRODUCING DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPH09263453A
公开(公告)日：1997-10-07
申请号：JP7404396
申请日：1996-03-28
申请人： MITSUBISHI MATERIALS CORP , TOKYO ELECTRON LTD
发明人： KUROMITSU YOSHIO , TOYODA SEIJI , SUGAMURA KUNIO , TACHIBANA MITSUHIRO
IPC分类号： C04B35/581 , C04B41/52 , C04B41/87 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/67
摘要： PROBLEM TO BE SOLVED: To obtain high thermal conductivity and to improve corrosion resistance and durability to thermal shock by forming an oxide layer and a specified metal oxide layer on the surface of an aluminum nitride sintered compact. SOLUTION: An aluminum nitride sintered compact 11 is subjected to heat treatment in an atmosphere of >=1×10 atm oxygen partial pressure and atm water vapor pressure at 1100 to 1500 deg.C for 3 to 0.5 hours to oxidize the surface to form an oxide layer 12 having 0.01 to 15vol.% porosity and 0.1 to 10μm thickness. Then an Al alkoxide soln., Zr alkoxide soln. or Ti alkoxide soln. is applied on the surface of the oxide layer 12 and the body is heated to form a metal oxide layer 14 consisting of Al2 O3 , ZrO2 or TiO2 having 0.01 to 1μm or more thickness.

8. 发明专利

JPH09115993A HEAT TREATMENT APPARATUS 失效
公开(公告)号：JPH09115993A
公开(公告)日：1997-05-02
申请号：JP29487295
申请日：1995-10-18
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： MATSUSE KIMIHIRO , HASHIMOTO TAKESHI , TACHIBANA MITSUHIRO
IPC分类号： H01L21/285 , C23C16/44 , C23C16/455 , C23C16/48 , H01L21/205 , H01L21/26 , H01L21/31 , H01L21/683 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To prevent a gas from flowing into a back side of an object to be processed without causing deterioration of an in-plane uniformity of a film thickness. SOLUTION: In the apparatus, an object W to be processed placed on a mounting base 30 within a processing vessel 24 supplied with a processing gas is held at its peripheral edge by a ring shaped object pressing member 42, and a back side gas is supplied to a back side of the mounting base. In this case, the object pressing member is formed at its inner end with a taper face which is brought into contact with the peripheral edge of the object to enhance a gas tightness. Thereby the gas tightness of a contact area between the taper face and object can be enhanced.

9. 发明专利

JP2014135464A Deposition device, substrate processing device and deposition method 有权
标题翻译：沉积装置，基板处理装置和沉积方法
公开(公告)号：JP2014135464A
公开(公告)日：2014-07-24
申请号：JP2013066665
申请日：2013-03-27
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KATO HISASHI , KOBAYASHI TAKESHI , MIURA SHIGEHIRO , YAMAWAKI JUN , KOSHIMIZU CHISHIO , TACHIBANA MITSUHIRO , KIMURA TAKAFUMI
IPC分类号： H01L21/205 , C23C16/505
CPC分类号： H01L21/02104 , C23C16/45519 , C23C16/4554 , C23C16/45551 , C23C16/509 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/68764 , H01L21/68771
摘要： PROBLEM TO BE SOLVED: To perform a plasma modification treatment achieving high uniformity in a direction of a depth of a recess on a substrate surface when performing a deposition process by using a process gas to a substrate which orbits by a rotary table.SOLUTION: A deposition device comprises: a plasma treatment part 80 which is arranged at a distance from each of process gas nozzles 31, 32 in a rotation direction of a rotary table 2; and a bias electrode part 120 arranged at a position facing the plasma treatment part 80 across the rotary table 2 so as not to contact the rotary table 2. A bias voltage is applied from a bias voltage application part 128 to the bias electrode part 120 thereby to apply the bias voltage to a wafer W on the rotary table 2 in a non-contact manner.
摘要翻译：要解决的问题：当通过使用处理气体对由旋转台轨道运动的基板进行沉积处理时，进行在基板表面上的凹部的深度方向上的高均匀性的等离子体改性处理。解决方案：A 沉积装置包括：等离子体处理部80，其在旋转台2的旋转方向上与处理气体喷嘴31,32隔开距离配置; 以及偏置电极部120，其配置在面向等离子体处理部80的位置，跨越旋转台2，以便不与旋转台2接触。偏置电压从偏置电压施加部128施加到偏置电极部120，从而以非接触的方式将偏置电压施加到旋转台2上的晶片W.

10. 发明专利

JP2001250779A PROCESS MARGIN DETERMINATION METHOD OF SUBSTRATE TREATING DEVICE, AND SUBSTRATE TREATMENT METHOD USING THE SAME 失效
公开(公告)号：JP2001250779A
公开(公告)日：2001-09-14
申请号：JP2000059440
申请日：2000-03-03
申请人： NEC CORP , TOKYO ELECTRON LTD
发明人： ITO NATSUKO , MORIYA TAKESHI , UESUGI FUMIHIKO , MORIYA SHUJI , AOMORI MASARU , KATO YOSHINORI , TACHIBANA MITSUHIRO
IPC分类号： H01L21/302 , C23C16/44 , C23C16/52 , G01N21/47 , H01L21/205 , H01L21/285 , H01L21/3065 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To treat a substrate by avoiding generation of approximately several tens of nm particles in the mass production process of a semiconductor device. SOLUTION: In a substrate treating device having a light source, an optical system, and a scattered light detection device, a substrate is treated while changing the process conditions and a process margin for preventing particles is obtained.

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