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    • 1. 发明申请
    • A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM
    • 等离子体增强原子层沉积系统
    • WO2006104863A2
    • 2006-10-05
    • PCT/US2006010682
    • 2006-03-22
    • TOKYO ELECTRON LTDISHIZAKA TADAHIROMATSUDA TSUKASACERIO JR FRANKMYAMAMOTO KAORU
    • ISHIZAKA TADAHIROMATSUDA TSUKASACERIO JR FRANKMYAMAMOTO KAORU
    • C23C16/00
    • C23C16/4409C23C16/4404C23C16/4412C23C16/45542C23C16/45544C23C16/5096
    • A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by altematingly introducing the first process material and the second process material.
    • 等离子体增强原子层沉积(PEALD)系统包括耦合到第二室部件的第一室部件,以提供限定处理室内的隔离处理空间的处理室。 衬底保持器设置在处理室内并且被配置为支撑衬底,第一处理材料供应系统被配置为将第一处理材料供应到处理室,第二处理材料供应系统被配置为将第二处理材料供应到 处理室。 电源被配置为将电磁功率耦合到处理室,以及插入在第一和第二室部件之间的密封组件。 密封组件包括多个密封构件,其被配置为将渗透通过第一和第二部件的界面的外部污染物的量减少到处理室的隔离处理空间中,其中通过替代地将第一 工艺材料和第二工艺材料。
    • 2. 发明申请
    • PROCESSING SYSTEM CONTAINING A HOT FILAMENT HYDROGEN RADICAL SOURCE FOR INTEGRATED SUBSTRATE PROCESSING
    • 含有热丝氢源的加工系统用于集成衬底加工
    • WO2008042691A3
    • 2008-05-22
    • PCT/US2007079667
    • 2007-09-27
    • TOKYO ELECTRON LTDTOKYO ELECTRON AMERICA INCMATSUDA TSUKASASAKURAGI ISAMU
    • MATSUDA TSUKASASAKURAGI ISAMU
    • C23C16/02C23C16/04C23C16/18C23C16/452C23C16/455C23C16/56
    • C23C16/0236C23C16/045C23C16/18C23C16/452C23C16/45565C23C16/56
    • A processing system (1, 504B) and method for integrated substrate processing in a substrate processing tool (500). The processing system (1, 504B) contains a substrate holder (20) configured for supporting and controlling the temperature of the substrate (25), a hot filament hydrogen radical source (31 ) for generating hydrogen radicals, and a controller (70, 510) configured for controlling the processing system (1, 504B). The hot filament hydrogen radical source (31 ) includes a showerhead assembly (30) containing an internal volume (37) and a showerhead plate (35) having gas passages (33) facing the substrate (25) for exposing the substrate (25) to the hydrogen radicals, and at least one meta! wire filament (59, 59a, 59b, 59c) within the interna! volume (37) to thermaliy dissociate H2 gas into the hydrogen radicals. The integrated process includes pretreating exposed surfaces of an etch feature (105) in a dielectric film (113, 115, 624, 626) and an exposed metal interconnect pattern (111 A, 622A) formed underneath the etch feature (105) with a flow of hydrogen radicals generated by thermal decomposition of H2 gas by a hot filament hydrogen radical source (31 ) separated from the substrate (25) by a showerhead plate (35) containing gas passages (33) facing the substrate (25). The integrated process further includes depositing a barrier metal film (116, 628) over the pretreated exposed surfaces, and forming a Cu metal film (113) on the barrier metal film (116, 628).
    • 一种用于衬底处理工具(500)中的集成衬底处理的处理系统(504B)和方法。 处理系统(504B)包含被配置用于支撑和控制衬底(25)的温度的衬底保持器(20),用于产生氢自由基的热丝氢自由基源(31)以及控制器(70,510 ),被配置用于控制处理系统(1,504B)。 热灯丝氢根源(31)包括含有内部容积(37)的喷头组件(30)和具有面向基片(25)的气体通道(33)的喷头板(35),用于将基片(25)暴露于 氢自由基和至少一个元! 内部线丝(59,59a,59b,59c) 体积(37)将H 2气体热分解成氢自由基。 该集成工艺包括在电介质膜(113,115,624,626)和在蚀刻特征(105)下方形成的暴露的金属互连图案(111A,622A)中利用流预处理蚀刻特征(105)的暴露表面 由通过含有面对基板(25)的气体通道(33)的喷头板(35)与基板(25)分离的热灯丝氢自由基源(31)通过H 2气体的热分解产生的氢自由基。 该集成工艺还包括在预处理的暴露表面上沉积阻挡金属膜(116,628),并且在阻挡金属膜(116,628)上形成Cu金属膜(113)。
    • 3. 发明申请
    • METHOD AND SYSTEM FOR FORMING AVARIABLE THICKNESS SEED LAYER
    • 用于形成可变厚度种子层的方法和系统
    • WO2006104647A3
    • 2006-11-16
    • PCT/US2006008112
    • 2006-03-07
    • TOKYO ELECTRON LTDTOKYO ELECTRON AMERICA INCMATSUDA TSUKASA
    • MATSUDA TSUKASA
    • C23C16/455
    • C23C16/18C23C16/16H01L21/28556H01L21/76868H01L21/76873
    • A method and system (1 ) for forming a variable thickness seed layer (102, 116) on a substrate (25, 100, 110) for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate (25, 100, 110) in a process chamber (10) containing a showerhead (30), with the center (106, 122) of the substrate (25, 100, 110) generally aligned with an inner gas delivery zone (32) of the showerhead (30) and the edge (104, 120) of the substrate (25, 100, 110) generally aligned with an outer gas delivery zone (34) of the showerhead (30). The method further includes depositing a seed layer (102, 116) on the substrate (25, 100, 110) by exposing the substrate (25, 100, 110) to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone (32), and exposing the substrate (25, 100, 110) to a second gas flowed through the outer gas delivery zone (34), whereby the seed layer (102, 116) is deposited with a thickness at the edge (104, 120) of the substrate (25, 100, 110) that is less than the thickness at the center (106, 122) of the substrate (25, 100, 110).
    • 一种用于在随后的金属电化学电镀工艺中在衬底(25,100,110)上形成可变厚度晶种层(102,116)的方法和系统(1),其中晶种层厚度分布改善了电镀金属层 与使用恒定厚度种子层时相比。 该方法包括在包含喷头(30)的处理室(10)中提供衬底(25,100,110),衬底(25,100,110)的中心(106,122)大致与衬底 (30)的气体输送区域(32)和基板(25,100,110)的边缘(104,120)大致与喷头(30)的外部气体输送区域(34)对齐。 该方法进一步包括通过将衬底(25,100,110)暴露于含有流经内部气体输送装置的含金属前体的第一气体而在衬底(25,100,110)上沉积种子层(102,116) (32),并且将所述衬底(25,100,110)暴露于流经所述外部气体输送区域(34)的第二气体,由此所述籽晶层(102,116)在所述边缘(104) (25,100,110)的中心(106,122)处的厚度小于所述衬底(25,100,110)的厚度。
    • 7. 发明申请
    • A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM AND METHOD
    • 等离子体增强原子层沉积系统和方法
    • WO2006101856A3
    • 2007-04-26
    • PCT/US2006009188
    • 2006-03-15
    • TOKYO ELECTRON LTDMATSUDA TSUKASA
    • MATSUDA TSUKASA
    • H01L21/461C23C16/00
    • C23C16/45544C23C16/4554C23C16/515H01J37/32009H01J37/32532H01L21/28562
    • A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Also included is coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate. A reactive gas is introduced within the process chamber, the reactive gas chemically reacting with contaminants in the process chamber to release the contaminants from at least one of a process chamber component or the substrate.
    • 使用等离子体增强原子层沉积(PEALD)工艺在衬底上沉积膜的方法包括将衬底布置在处理室中,该处理室被配置为便于PEALD工艺,在处理室内引入第一工艺材料并引入第二工艺材料 在处理室内。 还包括在引入第二工艺材料期间将电磁功率耦合到处理室,以便产生促进第一和第二工艺材料在衬底表面处的还原反应的等离子体。 反应性气体被引入处理室内,反应气体与处理室中的污染物质化学反应以从处理室组件或衬底中的至少一个释放污染物。