专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006104863A2 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM 审中-公开
标题翻译：等离子体增强原子层沉积系统
公开(公告)号：WO2006104863A2
公开(公告)日：2006-10-05
申请号：PCT/US2006010682
申请日：2006-03-22
申请人： TOKYO ELECTRON LTD , ISHIZAKA TADAHIRO , MATSUDA TSUKASA , CERIO JR FRANKM , YAMAMOTO KAORU
发明人： ISHIZAKA TADAHIRO , MATSUDA TSUKASA , CERIO JR FRANKM , YAMAMOTO KAORU
IPC分类号： C23C16/00
CPC分类号： C23C16/4409 , C23C16/4404 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/5096
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by altematingly introducing the first process material and the second process material.
摘要翻译：等离子体增强原子层沉积（PEALD）系统包括耦合到第二室部件的第一室部件，以提供限定处理室内的隔离处理空间的处理室。衬底保持器设置在处理室内并且被配置为支撑衬底，第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到处理室。电源被配置为将电磁功率耦合到处理室，以及插入在第一和第二室部件之间的密封组件。密封组件包括多个密封构件，其被配置为将渗透通过第一和第二部件的界面的外部污染物的量减少到处理室的隔离处理空间中，其中通过替代地将第一工艺材料和第二工艺材料。

2. 发明申请

WO2008042691A3 PROCESSING SYSTEM CONTAINING A HOT FILAMENT HYDROGEN RADICAL SOURCE FOR INTEGRATED SUBSTRATE PROCESSING 审中-公开
标题翻译：含有热丝氢源的加工系统用于集成衬底加工
公开(公告)号：WO2008042691A3
公开(公告)日：2008-05-22
申请号：PCT/US2007079667
申请日：2007-09-27
申请人： TOKYO ELECTRON LTD , TOKYO ELECTRON AMERICA INC , MATSUDA TSUKASA , SAKURAGI ISAMU
发明人： MATSUDA TSUKASA , SAKURAGI ISAMU
IPC分类号： C23C16/02 , C23C16/04 , C23C16/18 , C23C16/452 , C23C16/455 , C23C16/56
CPC分类号： C23C16/0236 , C23C16/045 , C23C16/18 , C23C16/452 , C23C16/45565 , C23C16/56
摘要： A processing system (1, 504B) and method for integrated substrate processing in a substrate processing tool (500). The processing system (1, 504B) contains a substrate holder (20) configured for supporting and controlling the temperature of the substrate (25), a hot filament hydrogen radical source (31 ) for generating hydrogen radicals, and a controller (70, 510) configured for controlling the processing system (1, 504B). The hot filament hydrogen radical source (31 ) includes a showerhead assembly (30) containing an internal volume (37) and a showerhead plate (35) having gas passages (33) facing the substrate (25) for exposing the substrate (25) to the hydrogen radicals, and at least one meta! wire filament (59, 59a, 59b, 59c) within the interna! volume (37) to thermaliy dissociate H2 gas into the hydrogen radicals. The integrated process includes pretreating exposed surfaces of an etch feature (105) in a dielectric film (113, 115, 624, 626) and an exposed metal interconnect pattern (111 A, 622A) formed underneath the etch feature (105) with a flow of hydrogen radicals generated by thermal decomposition of H2 gas by a hot filament hydrogen radical source (31 ) separated from the substrate (25) by a showerhead plate (35) containing gas passages (33) facing the substrate (25). The integrated process further includes depositing a barrier metal film (116, 628) over the pretreated exposed surfaces, and forming a Cu metal film (113) on the barrier metal film (116, 628).
摘要翻译：一种用于衬底处理工具（500）中的集成衬底处理的处理系统（504B）和方法。处理系统（504B）包含被配置用于支撑和控制衬底（25）的温度的衬底保持器（20），用于产生氢自由基的热丝氢自由基源（31）以及控制器（70,510 ），被配置用于控制处理系统（1，504B）。热灯丝氢根源（31）包括含有内部容积（37）的喷头组件（30）和具有面向基片（25）的气体通道（33）的喷头板（35），用于将基片（25）暴露于氢自由基和至少一个元！内部线丝（59,59a，59b，59c）体积（37）将H 2气体热分解成氢自由基。该集成工艺包括在电介质膜（113,115,624,626）和在蚀刻特征（105）下方形成的暴露的金属互连图案（111A，622A）中利用流预处理蚀刻特征（105）的暴露表面由通过含有面对基板（25）的气体通道（33）的喷头板（35）与基板（25）分离的热灯丝氢自由基源（31）通过H 2气体的热分解产生的氢自由基。该集成工艺还包括在预处理的暴露表面上沉积阻挡金属膜（116,628），并且在阻挡金属膜（116,628）上形成Cu金属膜（113）。

3. 发明申请

WO2006104647A3 METHOD AND SYSTEM FOR FORMING AVARIABLE THICKNESS SEED LAYER 审中-公开
标题翻译：用于形成可变厚度种子层的方法和系统
公开(公告)号：WO2006104647A3
公开(公告)日：2006-11-16
申请号：PCT/US2006008112
申请日：2006-03-07
申请人： TOKYO ELECTRON LTD , TOKYO ELECTRON AMERICA INC , MATSUDA TSUKASA
发明人： MATSUDA TSUKASA
IPC分类号： C23C16/455
CPC分类号： C23C16/18 , C23C16/16 , H01L21/28556 , H01L21/76868 , H01L21/76873
摘要： A method and system (1 ) for forming a variable thickness seed layer (102, 116) on a substrate (25, 100, 110) for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate (25, 100, 110) in a process chamber (10) containing a showerhead (30), with the center (106, 122) of the substrate (25, 100, 110) generally aligned with an inner gas delivery zone (32) of the showerhead (30) and the edge (104, 120) of the substrate (25, 100, 110) generally aligned with an outer gas delivery zone (34) of the showerhead (30). The method further includes depositing a seed layer (102, 116) on the substrate (25, 100, 110) by exposing the substrate (25, 100, 110) to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone (32), and exposing the substrate (25, 100, 110) to a second gas flowed through the outer gas delivery zone (34), whereby the seed layer (102, 116) is deposited with a thickness at the edge (104, 120) of the substrate (25, 100, 110) that is less than the thickness at the center (106, 122) of the substrate (25, 100, 110).
摘要翻译：一种用于在随后的金属电化学电镀工艺中在衬底（25,100,110）上形成可变厚度晶种层（102,116）的方法和系统（1），其中晶种层厚度分布改善了电镀金属层与使用恒定厚度种子层时相比。该方法包括在包含喷头（30）的处理室（10）中提供衬底（25,100,110），衬底（25,100,110）的中心（106,122）大致与衬底（30）的气体输送区域（32）和基板（25,100,110）的边缘（104,120）大致与喷头（30）的外部气体输送区域（34）对齐。该方法进一步包括通过将衬底（25,100,110）暴露于含有流经内部气体输送装置的含金属前体的第一气体而在衬底（25,100,110）上沉积种子层（102,116）（32），并且将所述衬底（25,100,110）暴露于流经所述外部气体输送区域（34）的第二气体，由此所述籽晶层（102,116）在所述边缘（104）（25,100,110）的中心（106,122）处的厚度小于所述衬底（25,100,110）的厚度。

4. 发明申请

WO2005033357A3 LOW-PRESSURE DEPOSITION OF METAL LAYERS FROM METAL-CARBONYL PRECURSORS 审中-公开
标题翻译：来自金属碳前驱体的金属层的低压沉积
公开(公告)号：WO2005033357A3
公开(公告)日：2005-06-23
申请号：PCT/US2004028894
申请日：2004-09-07
申请人： TOKYO ELECTRON LTD , IBM , YAMASAKI HIDEAKI , MATSUDA TSUKASA , GOMI ATSUSHI , HATANO TATSUO , SUGIURA MASAHITO , KAWANO YUMIKO , LEUSINK GERT J , MCFEELY FENTON R , MALHOTRA SANDRA G
发明人： YAMASAKI HIDEAKI , MATSUDA TSUKASA , GOMI ATSUSHI , HATANO TATSUO , SUGIURA MASAHITO , KAWANO YUMIKO , LEUSINK GERT J , MCFEELY FENTON R , MALHOTRA SANDRA G
IPC分类号： C23C16/16 , C23C16/44 , H01L21/285 , C23C16/455
CPC分类号： C23C16/16 , H01L21/28556
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500 C, by utilizing a residence time less than about 120 msec.
摘要翻译：通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在本发明的一个实施方案中，金属羰基前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12，Re 2 （CO）10，Cr（CO）6和Ru 3（CO）12前体）。在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

5. 发明申请

WO2007111779A8 METHOD OF INTEGRATING PEALD TA-CONTAINING FILMS INTO CU METALLIZATION 审中-公开
标题翻译：将含PE复合膜复合成金属化的方法
公开(公告)号：WO2007111779A8
公开(公告)日：2008-03-13
申请号：PCT/US2007003212
申请日：2007-02-05
申请人： TOKYO ELECTRON LTD , ISHIZAKA TADAHIRO , MATSUDA TSUKASA , HARA MASAMICHI , FAGUET JACQUES , MIZUSAWA YASUSHI
发明人： ISHIZAKA TADAHIRO , MATSUDA TSUKASA , HARA MASAMICHI , FAGUET JACQUES , MIZUSAWA YASUSHI
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译：用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，该系统被配置为执行PEALD处理，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

6. 发明申请

WO2007111779A3 METHOD OF INTEGRATING PEALD TA-CONTAINING FILMS INTO CU METALLIZATION 审中-公开
标题翻译：将含有PE的TA膜包含在CU金属化中的方法
公开(公告)号：WO2007111779A3
公开(公告)日：2007-12-06
申请号：PCT/US2007003212
申请日：2007-02-05
申请人： TOKYO ELECTRON LTD , ISHIZAKA TADAHIRO , MATSUDA TSUKASA , HARA MASAMICHI , FAGUET JACQUES , MIZUSAWA YASUSHI
发明人： ISHIZAKA TADAHIRO , MATSUDA TSUKASA , HARA MASAMICHI , FAGUET JACQUES , MIZUSAWA YASUSHI
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译：一种形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。该方法包括将衬底布置在等离子体增强的原子层沉积（PEALD）系统的处理室中，该等离子体增强的原子层沉积（PEALD）系统被配置为执行PEALD工艺，使用PEALD工艺在衬底上沉积TaC或TaCN膜，并且修改沉积的TaC或TaCN膜通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以至少从沉积的TaCN膜的等离子体暴露部分除去碳。该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜提供比沉积的TaCN膜更强的对金属膜的粘附。根据一个实施例，由TAIMATA和等离子体激发氢的交替曝光来沉积TaCN膜。

7. 发明申请

WO2006101856A3 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM AND METHOD 审中-公开
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：WO2006101856A3
公开(公告)日：2007-04-26
申请号：PCT/US2006009188
申请日：2006-03-15
申请人： TOKYO ELECTRON LTD , MATSUDA TSUKASA
发明人： MATSUDA TSUKASA
IPC分类号： H01L21/461 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/4554 , C23C16/515 , H01J37/32009 , H01J37/32532 , H01L21/28562
摘要： A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Also included is coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate. A reactive gas is introduced within the process chamber, the reactive gas chemically reacting with contaminants in the process chamber to release the contaminants from at least one of a process chamber component or the substrate.
摘要翻译：使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底布置在处理室中，该处理室被配置为便于PEALD工艺，在处理室内引入第一工艺材料并引入第二工艺材料在处理室内。还包括在引入第二工艺材料期间将电磁功率耦合到处理室，以便产生促进第一和第二工艺材料在衬底表面处的还原反应的等离子体。反应性气体被引入处理室内，反应气体与处理室中的污染物质化学反应以从处理室组件或衬底中的至少一个释放污染物。

8. 发明申请

WO2006104921A2 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM AND METHOD 审中-公开
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：WO2006104921A2
公开(公告)日：2006-10-05
申请号：PCT/US2006010870
申请日：2006-03-24
申请人： TOKYO ELECTRON LTD , FAGUET JACQUES , CERIO FRANK M JR , MATSUDA TSUKASA , YAMAMOTO KAORU
发明人： FAGUET JACQUES , CERIO FRANK M JR , MATSUDA TSUKASA , YAMAMOTO KAORU
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4409 , C23C16/45542 , C23C16/5096 , H01J37/32477
摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
摘要翻译：等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应，在基板上形成预定的膜。还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的膜沉积在基底上。

9. 发明专利

JP2002129329A METHOD FOR FORMING TUNGSTEN FILM 失效
公开(公告)号：JP2002129329A
公开(公告)日：2002-05-09
申请号：JP2000325658
申请日：2000-10-25
申请人： SONY CORP , TOKYO ELECTRON LTD
发明人： NAGAOKA KOJIRO , KURIHARA HISAAKI , TACHIBANA MITSUHIRO , MATSUDA TSUKASA
IPC分类号： C23C16/14 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a tungsten film with a low temperature CVD method(chemical-vapor deposition method), while completely or nearly preventing abnormal crystal growth. SOLUTION: This method includes carrying out two processes in a same chamber, one of which is a process of forming tungsten film 44 with the CVD, and the other of which is a treating process with a silane based gas on the surface on which the tungsten film 44 is to be formed, before the tungsten film forming process. The method selects a silane based treating condition in the surface treating process so as to make a product of silane partial pressure [Pa] and treating time [second] be 4000 Pa.second or more and 40000 Pa.second or less. Then the tungsten film is formed completely or nearly without generation of abnormal crystal growth.

10. 发明专利

AU2003280802A1 METHOD FOR CLEANING SUBSTRATE PROCESSING CHAMBER 未知
公开(公告)号：AU2003280802A1
公开(公告)日：2004-06-18
申请号：AU2003280802
申请日：2003-11-14
申请人： TOKYO ELECTRON LTD
发明人： YAMASAKI HIDEAKI , NAKAMURA KAZUHITO , MATSUZAWA KOUMEI , MATSUDA TSUKASA , KAWANO YUMIKO
IPC分类号： C23C16/44 , H01L21/205 , H01L21/683 , H01L21/31 , H01L21/3065
摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式