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    • 1. 发明申请
    • PLASMA PUMP WITH INTER-STAGE PLASMA SOURCE
    • 等离子体泵与等离子体等离子体源
    • WO2003005406A1
    • 2003-01-16
    • PCT/US2002/020868
    • 2002-07-02
    • TOKYO ELECTRON LIMITEDQUON, Bill, H.JOHNSON, Wayne, L.
    • QUON, Bill, H.JOHNSON, Wayne, L.
    • H01J37/02
    • H01J37/32834H01J37/32082
    • A high efficiency plasma pump for use in a plasma processing system that includes a plasma processing device having a first plasma density proximate a processing region and a second plasma density proximate an exit region is disclosed. The plasma pump includes an inter-stage plasma (ISP) source fluidly coupled to the plasma processing device proximate the exit region, the ISP source comprising an inter-stage plasma region having a third plasma density; and a plasma pump fluidly coupled to the ISP, the plasma pump having a fourth plasma density, wherein pumping speed is dependent upon the third plasma density and the fourth plasma density. The ISP source increasing the third plasma density to increase the pumping efficiency.
    • 公开了一种用于等离子体处理系统的高效率等离子体泵,其包括具有靠近处理区域的第一等离子体密度和靠近出口区域的第二等离子体密度的等离子体处理装置。 等离子体泵包括在出口区域处流体耦合到等离子体处理装置的级间等离子体(ISP)源,ISP源包括具有第三等离子体密度的级间等离子体区域; 以及流体耦合到ISP的等离子体泵,等离子体泵具有第四等离子体密度,其中泵送速度取决于第三等离子体密度和第四等离子体密度。 ISP源增加第三种等离子体密度以提高泵送效率。
    • 3. 发明申请
    • ION MOMENTUM TRANSFER PLASMA PUMP
    • 离子转移等离子泵
    • WO2002103745A1
    • 2002-12-27
    • PCT/US2002/015943
    • 2002-05-21
    • TOKYO ELECTRON LIMITEDQUON, Bill, H.
    • QUON, Bill, H.
    • H01J37/32
    • H01J37/32834H01J37/3266H05H1/54
    • A plasma pump to pump particles from a first region containing a plasma to a second region containing a lower density plasma is provided. The pump includes a conduit having an inlet end, a radially directed outlet, and a longitudinal axis extending from the inlet end towards a distal end. A magnet array generates a magnetic field having field lines generally parallel to the longitudinal axis. A high voltage, radio frequency electrode is disposed at the distal end of the conduit. The electrode produces a high voltage, radio frequency electric field within the conduit such that charged particles within the conduit are accelerated radially through ion cyclotron resonance so as to pass through the conduit outlet. A method is also provided. The method includes providing the magnetic field, having field lines generally parallel to the longitudinal axis and providing the high voltage, radio frequency electric field within the conduit radially inward of the conduit outlet.
    • 提供了一种将粒子从含有等离子体的第一区域泵送到含有较低密度等离子体的第二区域的等离子体泵。 泵包括具有入口端,径向指示的出口和从入口端朝向远端延伸的纵向轴线的导管。 磁体阵列产生具有大致平行于纵向轴线的场线的磁场。 高压射频电极设置在导管的远端。 电极在导管内产生高电压射频电场,使得导管内的带电粒子通过离子回旋共振径向加速,从而通过导管出口。 还提供了一种方法。 该方法包括提供磁场,其具有大致平行于纵向轴线的场线,并且在导管的径向向内的导管出口内提供高压的射频电场。
    • 4. 发明申请
    • INDUCTIVELY COUPLED HIGH-DENSITY PLASMA SOURCE
    • 感应耦合高密度等离子体源
    • WO2002097937A1
    • 2002-12-05
    • PCT/US2002/022080
    • 2002-03-25
    • TOKYO ELECTRON LIMITEDQUON, Bill, H.JEVTIC, JovanANTLEY, SamSTRANG, Eric, J.
    • QUON, Bill, H.JEVTIC, JovanANTLEY, SamSTRANG, Eric, J.
    • H01T23/00
    • H01J37/321H01J37/32357H01J37/3266
    • A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma. At least one plasma source can be used to form a high-density plasma suitable for plasma processing of a workpiece residing in a plasma chamber in communication with the at least one source.
    • 公开了一种高密度等离子体源(100)。 源包括环形绝缘体(300),其内部形成有环形空腔(316)。 用作天线的电感线圈(340)布置在环形空腔内,并且可操作以在等离子体管道(60)内部区域(72)内产生第一磁场,并且当环形体布置成 围绕等离子体管道的一部分。 接地导电壳体(400)围绕环形绝缘体。 静电屏蔽(360)被布置成邻近绝缘体的内表面并且被接地到导电壳体。 上,下磁环(422和424)优选地布置成邻近导电外壳外的环形绝缘体的上表面和下表面。 T匹配网络与所述电感器线圈电连通,并且适于提供从RF功率源到等离子体的RF功率的有效传输。 可以使用至少一个等离子体源来形成适于等离子体处理等离子体处理的等离子体处理,所述等离子体处理驻留在与所述至少一个源连通的等离子体室中。
    • 5. 发明申请
    • IMPEDANCE MONITORING SYSTEM AND METHOD
    • 阻抗监测系统和方法
    • WO2002075332A1
    • 2002-09-26
    • PCT/US2002/005112
    • 2002-03-14
    • TOKYO ELECTRON LIMITEDQUON, Bill, H.
    • QUON, Bill, H.
    • G01R27/26
    • H01J37/321G01R19/0061G01R27/2641H01J37/32082H01J37/32183H01J37/32935
    • An apparatus (14) for and method of measuring impedance in a capacitively coupled plasma reactor system (10). The apparatus includes a high-frequency RF source (150) in electrical communication with an upper electrode (50). A first high-pass filter (130) is arranged between the upper electrode and the high-frequency RF source, to block low-frequency, high-voltage signals from the electrode RF power source (66) from passing through to the impedance measuring circuit. A current-voltage probe (140) is arranged between the high-frequency source and the high-pass filter, and is used to measure the current and voltage of the probe signal with and without the plasma present. An amplifier (250) is electrically connected to the current-voltage probe, and a data acquisition unit (260) is electrically connected to the amplifier. A second high-pass filter (276) is electrically connected to a lower electrode (56) and to ground, so as to complete the isolation of the high-frequency circuit of the impedance measurement apparatus from the low-frequency, high-voltage circuit of the capacitively coupled plasma reactor system. A method of measuring the plasma impedance using the apparatus of the present invention is also disclosed.
    • 一种用于测量电容耦合等离子体反应器系统(10)中的阻抗的装置(14)。 该装置包括与上电极(50)电连通的高频RF源(150)。 第一高通滤波器(130)布置在上电极和高频RF源之间,以阻止来自电极RF电源(66)的低频高电压信号通过阻抗测量电路 。 电流电压探头(140)设置在高频源和高通滤波器之间,用于测量具有和不具有等离子体的探针信号的电流和电压。 放大器(250)电连接到电流 - 电压探针,并且数据获取单元(260)电连接到放大器。 第二高通滤波器(276)电连接到下电极(56)并接地,从而将阻抗测量装置的高频电路与低频,高压电路 的电容耦合等离子体反应器系统。 还公开了使用本发明的装置测量等离子体阻抗的方法。