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1. 发明申请

WO2011156055A1 APPARATUS AND METHOD FOR CHEMICAL VAPOR DEPOSITION CONTROL 审中-公开
标题翻译：化学气相沉积控制的装置和方法
公开(公告)号：WO2011156055A1
公开(公告)日：2011-12-15
申请号：PCT/US2011/033393
申请日：2011-04-21
申请人： TOKYO ELECTRON LIMITED , LEE, Eric, M. , FAGUET, Jacques , STRANG, Eric, J.
发明人： LEE, Eric, M. , FAGUET, Jacques , STRANG, Eric, J.
IPC分类号： C23C16/00 , B05C11/02 , C23C14/00
CPC分类号： C23C16/52 , B05D1/60 , B05D3/002 , C23C16/44 , C23C16/45565
摘要： A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate. Furthermore, a method of depositing a thin film on a substrate in a deposition system is described.
摘要翻译：本发明描述了一种用于其中的气体加热装置及其处理系统，用于使用气相沉积工艺在基片上沉积薄膜。气体加热装置包括加热元件阵列，该加热元件阵列具有多个加热元件区域，该多个加热元件区域被配置为在多个加热元件区域中或通过所述多个加热元件区域接收成膜组合物的流动，以便导致成膜组合物的一种或多种成分的热解加热时。另外，处理系统可以包括构造成支撑衬底的衬底保持器。衬底保持器可以包括后侧气体供应系统，其构造成将热传递气体供应到所述衬底的背面，其中所述背侧气体供应系统被配置为独立地将所述传热气体供应到所述衬底的背侧的多个区域。此外，描述了在沉积系统中在衬底上沉积薄膜的方法。

2. 发明申请

WO2008039611A2 TEMPERATURE CONTROLLED SUBSTRATE HOLDER WITH NON-UNIFORM INSULATION LAYER FOR A SUBSTRATE PROCESSING SYSTEM 审中-公开
标题翻译：用于基板加工系统的非均匀绝缘层的温度控制基板支架
公开(公告)号：WO2008039611A2
公开(公告)日：2008-04-03
申请号：PCT/US2007/076179
申请日：2007-08-17
申请人： TOKYO ELECTRON LIMITED , STRANG, Eric, J. , TSUKAMOTO, Yuji
发明人： STRANG, Eric, J. , TSUKAMOTO, Yuji
IPC分类号： F27D11/00
CPC分类号： F27D5/0037 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67103
摘要： A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m 2 -K) through the thermal insulator between the temperature controlled support base and the substrate support.
摘要翻译：用于在处理系统中支撑衬底的衬底保持器包括具有第一温度的温度控制的支撑基座和与温度受控的支撑基座相对并且被配置为支撑衬底的衬底支撑件。还包括一个或多个加热元件，其耦合到衬底支撑件并且被配置为将衬底支撑件加热到高于第一温度的第二温度，以及设置在温度受控支撑基底和衬底支撑件之间的热绝缘体。热绝缘体包括通过温度受控支撑基底和基板支撑件之间的热绝缘体的传热系数（W / m 2 SUP -K）的不均匀的空间变化。

3. 发明申请

WO2007149627A2 A DRY NON-PLASMA TREATMENT SYSTEM AND METHOD OF USING 审中-公开
标题翻译：干式非等离子体处理系统及其使用方法
公开(公告)号：WO2007149627A2
公开(公告)日：2007-12-27
申请号：PCT/US2007067479
申请日：2007-04-26
申请人： TOKYO ELECTRON LTD , KENT MARTIN , STRANG ERIC J
发明人： KENT MARTIN , STRANG ERIC J
IPC分类号： H01L39/24
CPC分类号： B05B12/12 , B05B12/04 , B05B13/02 , C01B7/191 , C09K13/08 , C23F1/02 , C23F1/12 , H01L21/02049 , H01L21/0337 , H01L21/0338 , H01L21/30621 , H01L21/31116 , H01L21/67069 , H01L21/67109 , H01L21/67248 , H01L21/68742
摘要： A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemicai treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry, including HF and optionaily NH 3 , under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.
摘要翻译：描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。处理系统被配置为提供一种或多种基底的化学处理，其中每个基底在包括表面温度和气体压力在内的受控条件下暴露于气态化学物质，包括HF和选择性NH 3。此外，处理系统被配置为提供每个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

4. 发明申请

WO2005050698A2 SYSTEM AND METHOD FOR USING FIRST-PRINCIPLES SIMULATION TO CONTROL A SEMICONDUCTOR MANUFACTURING PROCESS 审中-公开
标题翻译：使用第一原理模拟控制半导体制造工艺的系统和方法
公开(公告)号：WO2005050698A2
公开(公告)日：2005-06-02
申请号：PCT/US2004028804
申请日：2004-09-22
申请人： TOKYO ELECTRON LTD , STRANG ERIC J
发明人： STRANG ERIC J
IPC分类号： H01L20060101 , H01L
CPC分类号： G05B19/41885 , Y02P90/26 , Y02P90/86
摘要： A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, inputting a first principles physical model relating to the semiconductor processing tool, performing first principles simulation using the input data and the physical model to provide a first principles simulation result. The first principles simulation result is used to build an empirical model, and at least one of the first principles simulation result and the empirical model is selected to control the process performed by the semiconductor processing tool.
摘要翻译：一种用于控制由半导体处理工具执行的处理的方法，系统和计算机可读介质。该方法包括输入与半导体处理工具执行的处理有关的数据，输入与半导体处理工具相关的第一原理物理模型，使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果。第一原理模拟结果用于建立经验模型，并选择第一原理模拟结果和经验模型中的至少一个来控制半导体处理工具执行的过程。

5. 发明申请

WO2005034180A3 SYSTEM AND METHOD FOR ON-TOOL SEMICONDUCTOR SIMULATION 审中-公开
公开(公告)号：WO2005034180A3
公开(公告)日：2005-04-14
申请号：PCT/US2004/028801
申请日：2004-09-20
申请人： TOKYO ELECTRON LIMITED , STRANG, Eric, J.
发明人： STRANG, Eric, J.
IPC分类号： G06F9/45
摘要： A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool (102) includes inputting data (104) relating to a process performed by the semiconductor processing tool (102), and inputting a first principles physical model (106) relating to the semiconductor processing tool (102). First principles simulation (108) is then performed using the input data (104) and the physical model (106) to provide a first principles simulation result, and the first principles simulation result is used to control the process performed by the semiconductor processing tool (102).

6. 发明申请

WO2004095502A2 PLASMA PROCESSING SYSTEM AND METHOD 审中-公开
标题翻译：等离子体处理系统和方法
公开(公告)号：WO2004095502A2
公开(公告)日：2004-11-04
申请号：PCT/US2004/001406
申请日：2004-01-21
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T. , MOROZ, Paul , STRANG, Eric, J. , MITROVIC, Andrej, S.
发明人： FINK, Steven, T. , MOROZ, Paul , STRANG, Eric, J. , MITROVIC, Andrej, S.
IPC分类号： H01J37/00
CPC分类号： H01J37/3244 , H01J2237/022
摘要： A plasma processing system includes a chamber containing a plasma processing region and a chuck constructed and arranged to support a substrate within the chamber in the processing region. The plasma processing system further includes at least one gas injection passage in communication with the chamber and configured to facilitate removal of particles from the chamber by passing purge gas therethrough. In one embodiment, the plasma processing system can include an electrode configured to attract or repel particles in the chamber by electrostatic force when the electrode is biased with DC or RF power. A method of processing a substrate in a plasma processing system includes removing particles in a chamber of the plasma processing system by supplying purge gas through at least one gas injection passage in communication with the chamber.
摘要翻译：等离子体处理系统包括包含等离子体处理区域的腔室和构造和布置成在处理区域内的腔室内支撑衬底的卡盘。等离子体处理系统还包括至少一个与室连通的气体注入通道，并且构造成便于通过吹扫气体从腔室中除去颗粒。在一个实施例中，等离子体处理系统可以包括电极，其被配置为当电极用DC或RF功率偏置时通过静电力吸引或排斥腔室中的颗粒。一种在等离子体处理系统中处理衬底的方法，包括通过与室连通的至少一个气体注入通道供应净化气体来去除等离子体处理系统的腔室中的颗粒。

7. 发明申请

WO03002860A3 DIRECTED GAS INJECTION APPARATUS FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体加工的定向气体注入装置
公开(公告)号：WO03002860A3
公开(公告)日：2003-03-20
申请号：PCT/US0216583
申请日：2002-06-20
申请人： TOKYO ELECTRON LTD , STRANG ERIC J
发明人： STRANG ERIC J
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/304 , H05H1/34 , H01L21/00
CPC分类号： H01J37/3244
摘要： A method and system (1) for utilizing shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system (20) as part of a plasma process system. By utilizing the shaped orifices, directionality of gas flow (25) can be improved. This improvement is especially beneficial in high aspect ratio processing.
摘要翻译：一种方法和系统（1），用于在气体注入系统（20）中利用成形的孔口（例如，声波和简单的孔口和发散的喷嘴）作为等离子体处理系统的一部分。通过利用成形的孔，可以改进气流（25）的方向性。这种改进在高纵横比处理中特别有用。

8. 发明申请

WO2002071463A1 SHOWER HEAD GAS INJECTION APPARATUS WITH SECONDARY HIGH PRESSURE PULSED GAS INJECTION 审中-公开
标题翻译：具有二次高压脉冲气体喷射的喷头喷嘴装置
公开(公告)号：WO2002071463A1
公开(公告)日：2002-09-12
申请号：PCT/US2002/003405
申请日：2002-02-26
申请人： TOKYO ELECTRON LIMITED , STRANG, Eric, J.
发明人： STRANG, Eric, J.
IPC分类号： H01L21/3065
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45557 , C23C16/5096 , H01J37/3244
摘要： A plasma-processing chamber including pulsed gas injection orifices/nozzles utilized in combination with continous flow shower head injection orifices is described. The continous flow shower head injection orifices introduce a continous flow of gas while the pulsed gas injection orifices/nozzles cyclically inject a high-pressure gas into the chamber. In one embodiment, a central computer may monitor and control pressure measurement devices and utilize the measurements to adjust processing parameters (e.g. pulse duration, pulse repetition rate, and the pulse mass flow rate of processing gases).
摘要翻译：描述了等离子体处理室，其包括与连续喷淋头喷射孔组合使用的脉冲气体喷射孔/喷嘴。连续流喷淋头喷射孔引入连续的气体流，而脉冲气体喷射孔/喷嘴将高压气体循环地喷射到室中。在一个实施例中，中央计算机可以监测和控制压力测量装置并利用测量来调整处理参数（例如脉冲持续时间，脉冲重复率和处理气体的脉冲质量流率）。

9. 发明申请

WO0209241A3 ELECTRODE FOR PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：等离子体处理系统电极
公开(公告)号：WO0209241A3
公开(公告)日：2002-05-23
申请号：PCT/US0122509
申请日：2001-07-19
申请人： TOKYO ELECTRON LTD , SIRKIS MURRAY D , STRANG ERIC J
发明人： SIRKIS MURRAY D , STRANG ERIC J
IPC分类号： H01J37/32
CPC分类号： H01J37/32532 , H01J37/32605
摘要： A plasma processing system (110) includes an electrode assembly (150) having a metal drive electrode (154) coupled to the source electrode (152). Source electrode (152) is further provided with an insulating layer (151) on its backside face. The insulating layer (151) is the contact layer between metal drive electrode (154) and source electrode (152). Additionally, source electrode (152) is provided with various front face contours (261, 262, 263, 264). The front face of source electrode (152) is exposed to the reactor chamber 142 of plasma processing system (110) during use. The source electrode is attached to metal drive electrode (154) using fasterners (133) that do not introduce contaminants into the plasma processing chamber.
摘要翻译：等离子体处理系统（110）包括具有耦合到源电极（152）的金属驱动电极（154）的电极组件（150）。源极（152）在其背面还具有绝缘层（151）。绝缘层（151）是金属驱动电极（154）与源电极（152）之间的接触层。另外，源极（152）设置有各种正面轮廓（261,262,263,264）。在使用期间，源极（152）的前表面暴露于等离子体处理系统（110）的反应室142。源电极使用不将污染物引入等离子体处理室的紧固件（133）附接到金属驱动电极（154）。

10. 发明申请

WO0209141A2 AUTOMATED ELECTRODE REPLACEMENT APPARATUS FOR A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于等离子体处理系统的自动电极更换装置
公开(公告)号：WO0209141A2
公开(公告)日：2002-01-31
申请号：PCT/US0122508
申请日：2001-07-19
申请人： TOKYO ELECTRON LTD , SIRKIS MURRAY D , STRANG ERIC J , BIBBY YU WANG , CRONIN JOHN E
发明人： SIRKIS MURRAY D , STRANG ERIC J , BIBBY YU WANG , CRONIN JOHN E
IPC分类号： H01J37/32 , H01J37/00
CPC分类号： H01J37/32605
摘要： A plasma processing system includes an automated electrode retention mechanism (130) for providing automated engagement of a source electrode (152) with a drive electrode (154). In addition, an automated electrode handling system (320) is provided that has the ability to remove a source electrode (152) from the electrode retention mechanism and replace it with a second source electrode (152') that is stored in a staging area (340) outside the plasma processing system vacuum chamber. The system may operate automatically under program control of a computer system (200) coupled thereto.
摘要翻译：等离子体处理系统包括用于提供源电极（152）与驱动电极（154）的自动接合的自动电极保持机构（130）。此外，提供了一种自动化电极处理系统（320），其能够从电极保持机构移除源电极（152）并用存储在分级区域中的第二源电极（152'）替代它 340）在等离子体处理系统真空室之外。系统可以在与其耦合的计算机系统（200）的程序控制下自动操作。

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