专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2007041040A3 GATE DIELECTRIC MATERIAL HAVING REDUCED METAL CONTENT 审中-公开
公开(公告)号：WO2007041040A3
公开(公告)日：2007-04-12
申请号：PCT/US2006/037079
申请日：2006-09-22
申请人： TOKYO ELECTRON LIMITED , O'MEARA, David, L. , LEE, Youngjong , WAJDA, Cory
发明人： O'MEARA, David, L. , LEE, Youngjong , WAJDA, Cory
IPC分类号： H01L21/336 , H01L21/31 , H01L21/469
摘要： A method is provided for reducing the metal content and controlling the metal depth profile of a gate dielectric layer in a gate stack. The method includes providing a substrate in a process chamber, depositing a gate dielectric layer on the substrate, where the gate dielectric layer includes a metal element. The metal element is selectively etched from at least a portion of the gate dielectric layer to form an etched gate dielectric layer with reduced metal content, and a gate electrode layer is formed on the etched gate dielectric layer.

2. 发明申请

WO2005029568A3 INTERFACIAL OXIDATION PROCESS FOR HIGH-k GATE DIELECTRIC PROCESS INTEGRATION 审中-公开
公开(公告)号：WO2005029568A3
公开(公告)日：2005-03-31
申请号：PCT/US2004/026811
申请日：2004-08-19
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , O'MEARA, David, L. , WAJDA, Cory , TAKAHASHI, Tsuyoshi , CALLEGARI, Alessandro , SCHEER, Kristen , ZAFAR, Sufi , JAMISON, Paul
发明人： O'MEARA, David, L. , WAJDA, Cory , TAKAHASHI, Tsuyoshi , CALLEGARI, Alessandro , SCHEER, Kristen , ZAFAR, Sufi , JAMISON, Paul
IPC分类号： H01L21/314
摘要： A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a highk layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.

3. 发明申请

WO2006107415A1 METHOD AND SYSTEM FOR FORMING AN OXYNITRIDE LAYER 审中-公开
标题翻译：用于形成氧化层的方法和系统
公开(公告)号：WO2006107415A1
公开(公告)日：2006-10-12
申请号：PCT/US2006/005418
申请日：2006-02-16
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , IGETA, Masanobu , WAJDA, Cory , O'MEARA, David, L. , SCHEER, Kristen , FURUKAWA, Toshihara
发明人： IGETA, Masanobu , WAJDA, Cory , O'MEARA, David, L. , SCHEER, Kristen , FURUKAWA, Toshihara
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C8/34 , C23C8/36 , H01J37/32192 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/3144 , H01L21/31662
摘要： The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.
摘要翻译：本发明通常提供了在基板上制备氮氧化物膜的方法。衬底的表面暴露于通过紫外线（UV）辐射诱导的包含至少一种包含氧的分子组合物的第一工艺气体的解离形成的氧自由基，以在表面上形成氧化膜。氧化物膜暴露于通过等离子体诱导的包含至少一种包含氮的分子组合物的等离子体诱导解离形成的氮自由基，该等分子组合物基于微波照射经由具有多个狭缝的平面天线构件的等离子体来氮化氧化膜并形成氮氧化物膜。

4. 发明申请

WO2005013348A2 FORMATION OF ULTRA-THIN OXIDE AND OXYNITRIDE LAYERS BY SELF-LIMITING INTERFACIAL OXIDATION 审中-公开
标题翻译：通过自限制界面氧化形成超氧化物和氧化物层
公开(公告)号：WO2005013348A2
公开(公告)日：2005-02-10
申请号：PCT/US2004/024595
申请日：2004-07-30
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , O'MEARA, David, L. , WAJDA, Cory , DIP, Anthony , TOELLER, Michael , FURUKAWA, Toshihara , SCHEER, Kristen , CALLEGARI, Alessandro , BUEHRER, Fred , ZAFAR, Sufi , GOUSEV, Evgeni , CHOU, Anthony , HIGGINS, Paul
发明人： O'MEARA, David, L. , WAJDA, Cory , DIP, Anthony , TOELLER, Michael , FURUKAWA, Toshihara , SCHEER, Kristen , CALLEGARI, Alessandro , BUEHRER, Fred , ZAFAR, Sufi , GOUSEV, Evgeni , CHOU, Anthony , HIGGINS, Paul
IPC分类号： H01L21/314
CPC分类号： H01L21/67098 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662
摘要： Ultra-thin oxide and oxynitride layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide and oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in Si0 2 layers with a thickness of about 15Å, where the thickness of the Si0 2 layers varies less than about 1 Åover the substrates.
摘要翻译：使用低压处理形成超薄氧化物和氧氮化物层，以实现衬底的自限制氧化并提供超薄氧化物和氧氮化物。待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。本发明的一个实施例提供Si衬底的自限制氧化，其导致SiO 2层的厚度为约15，其中SiO 2层的厚度在基板之外变化小于约1埃。

5. 发明申请

WO2005103333A2 WAFER HEATER ASSEMBLY 审中-公开
标题翻译： WAFER加热器总成
公开(公告)号：WO2005103333A2
公开(公告)日：2005-11-03
申请号：PCT/US2005/002766
申请日：2005-02-01
申请人： TOKYO ELECTRON LIMITED , O'MEARA, David, L. , LEUSINK, Gerrit, J. , CABRAL, Stephen, H. , DIP, Anthony , WAJDA, Cory , JOE, Raymond
发明人： O'MEARA, David, L. , LEUSINK, Gerrit, J. , CABRAL, Stephen, H. , DIP, Anthony , WAJDA, Cory , JOE, Raymond
IPC分类号： C23F1/00
CPC分类号： H01L21/67109 , H01J2237/2001
摘要： A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon 'wire' or `braided' structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.
摘要翻译：描述了具有用于单个晶片处理系统的唯一加热器元件的晶片加热组件。加热单元包括封装在石英鞘中的碳线元件。加热单元与石英无污染，允许直接接触晶片。碳线或“编织”结构的机械灵活性允许线圈配置，其允许跨晶片的独立加热器区域控制。跨晶片的多个独立的加热器区域可以允许温度梯度调节膜生长/沉积均匀性和快速的热调节，其膜均匀性优于常规单晶片系统，并且最小至无晶片翘曲。低热质量允许快速的热响应，其实现脉冲或数字热处理，其导致逐层成膜以改善薄膜控制。

6. 发明申请

WO2005034210A1 METHOD AND PROCESSING SYSTEM FOR MONITORING STATUS OF SYSTEM COMPONENTS 审中-公开
标题翻译：用于监控系统组件状态的方法和处理系统
公开(公告)号：WO2005034210A1
公开(公告)日：2005-04-14
申请号：PCT/US2004/032170
申请日：2004-09-30
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , O'MEARA, David, L. , BURDETT, Daniel, Craig , CABRAL, Stephen, H. , LUESINK, Gert , KOSTENKO, John, William , WAJDA, Cory
发明人： O'MEARA, David, L. , BURDETT, Daniel, Craig , CABRAL, Stephen, H. , LUESINK, Gert , KOSTENKO, John, William , WAJDA, Cory
IPC分类号： H01L21/00
CPC分类号： H01L21/67276 , B81C99/0065 , B81C2201/0138 , H01L21/67253
摘要： A method and system for monitoring status of a system component (200, 300) during a process. The method includes exposing a system component (200, 300) to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component (200, 300). Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component (200, 300) can be a consumable system part such as a process tube (25), a shield, a ring, a baffle, an injector, a substrate holder (35, 112), a liner, a pedestal, a cap cover, an electrode, and a heater (15, 20, 65, 70, 122), any of which can further include a protective coating. The processing system (1, 100) includes the system component (200,300) in a process chamber (10, 102), a gas injection system (94, 104) for introducing the reactant gas, a chamber protection system (92, 108) for monitoring the status of the system component (200, 300), and a controller (90, 124) for controlling the processing system (1, 100) in response to the status.
摘要翻译：一种用于在过程期间监视系统组件（200,300）的状态的方法和系统。该方法包括在反应气体过程中将系统组分（200,300）暴露于反应气体中，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程中监测侵蚀产物的释放以确定系统组件的状态（200,300）。可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。系统部件（200,300）可以是消耗系统部件，例如处理管（25），屏蔽件，环形件，挡板，注射器，衬底保持器（35,112），衬垫，基座，帽盖，电极和加热器（15,20,65,70,122），其中任何一个可进一步包括保护涂层。处理系统（1,100）包括处理室（10,102）中的系统组件（200,300），用于引入反应气体的气体注入系统（94,104），用于监视系统组件（200,300）的状态，以及用于响应于该状态控制处理系统（1,100）的控制器（90,124）。

7. 发明申请

WO2005034181A2 METHOD FOR MONITORING STATUS OF SYSTEM COMPONENTS 审中-公开
标题翻译：监控系统组件状态的方法
公开(公告)号：WO2005034181A2
公开(公告)日：2005-04-14
申请号：PCT/US2004/028802
申请日：2004-09-21
申请人： TOKYO ELECTRON LIMITED , O'MEARA, David, L. , BURDETT, Daniel, Craig , CABRAL, Stephen, H. , LEUSINK, Gert , KOSTENKO, John, William , WAJDA, Cory
发明人： O'MEARA, David, L. , BURDETT, Daniel, Craig , CABRAL, Stephen, H. , LEUSINK, Gert , KOSTENKO, John, William , WAJDA, Cory
IPC分类号： H01L
CPC分类号： H01J37/32935 , G01N21/55 , G01N21/59
摘要： A method and system are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component to light from a light source and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.
摘要翻译：提供了一种用于监视批处理系统的处理室中的系统组件的状态的方法和系统。该方法包括将系统组件暴露于来自光源的光并监测光与系统组件的相互作用以确定系统组件的状态。该方法可以在可以包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺的过程中检测来自系统部件的光透射和/或光反射。系统组件可以是消耗系统部件，例如处理管，屏蔽，环，挡板和衬垫，并且还可以包含保护涂层。

8. 发明申请

WO2006078408A2 METHOD AND CONTROL SYSTEM FOR TREATING A HAFNIUM-BASED DIELECTRIC PROCESSING SYSTEM 审中-公开
标题翻译：用于处理基于高压电介质处理系统的方法和控制系统
公开(公告)号：WO2006078408A2
公开(公告)日：2006-07-27
申请号：PCT/US2005/046342
申请日：2005-12-19
申请人： TOKYO ELECTRON LIMITED , O'MEARA, David, L. , MAKU, Shingo
发明人： O'MEARA, David, L. , MAKU, Shingo
IPC分类号： H01L21/306 , C03C25/68
CPC分类号： C03C17/001 , C03C17/22 , C03C17/23 , C03C2217/228 , C03C2217/258 , C03C2218/31 , C03C2218/33 , C23C16/4405 , Y10S438/905
摘要： A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.
摘要翻译：一种用于处理其中处理系统的系统组件暴露于含氯气体的铪基介质处理系统的方法和控制系统。在除去铪之后残留在处理系统中的残余铪副产物与来自含氯气体的含氯蚀刻剂反应。氯化铪产品从处理系统中挥发以用尽。控制系统可利用计算机可读介质向处理系统引入含氯气体，以调节处理系统中的温度和压力中的至少一个，以从含氯气体中产生含氯气体的含氯蚀刻剂在硅酸铪，氧化铪或氮氧化铪去除工艺之后残留在处理系统中的残余铪副产物的溶解，并从处理系统中排出氯化铪产物。

9. 发明申请

WO2013048769A1 MULTI-LAYER PATTERN FROM ALTERNATE ALD PROCESSES 审中-公开
标题翻译：来自ALTERNATE ALD过程的多层图案
公开(公告)号：WO2013048769A1
公开(公告)日：2013-04-04
申请号：PCT/US2012/055299
申请日：2012-09-14
申请人： TOKYO ELECTRON LIMITED , O'MEARA, David, L. , MOSDEN, Aelan
发明人： O'MEARA, David, L. , MOSDEN, Aelan
IPC分类号： H01L21/44
CPC分类号： H01L21/0337 , H01L21/0338
摘要： A method of patterning a substrate. A sacrificial film is formed over a substrate and a pattern created therein. A first spacer layer is conformally deposited over the patterned sacrificial film and then at least one horizontal portion of the first spacer layer is removed while leaving the vertical portions of the first spacer layer. A second spacer layer is conformally deposited over the patterned sacrificial film and the remaining portions of the first spacer layer. Then, at least one horizontal portion of the second spacer layer is removed while leaving the vertical portions of the second spacer layer. Conformal deposition of the first and second spacer layers is optionally repeated one or more times. Conformal deposition of the first layer is optionally repeated. Then, one of the first spacer layer or the second spacer layer is removed while substantially leaving the vertical portions of the remaining one of the first or second spacer layers.
摘要翻译：图案化衬底的方法。在衬底上形成牺牲膜，并在其中形成图案。在图案化的牺牲膜上共形沉积第一间隔层，然后移除第一间隔层的至少一个水平部分，同时留下第一间隔层的垂直部分。在图案化的牺牲膜和第一间隔层的剩余部分上共形沉积第二间隔层。然后，除去第二间隔层的至少一个水平部分，同时留下第二间隔层的垂直部分。第一和第二间隔层的共形沉积可选地重复一次或多次。任选地重复第一层的共形沉积。然后，除去第一间隔层或第二间隔层中的一个，同时基本上留下第一或第二间隔层中剩余的一个的垂直部分。

10. 发明申请

WO2005104186A3 METHOD AND PROCESSING SYSTEM FOR PLASMA-ENHANCED CLEANING OF SYSTEM COMPONENTS 审中-公开
公开(公告)号：WO2005104186A3
公开(公告)日：2005-11-03
申请号：PCT/US2005/002460
申请日：2005-01-26
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , KOSTENKO, John, Williams , O'MEARA, David, L.
发明人： KOSTENKO, John, Williams , O'MEARA, David, L.
IPC分类号： H01J37/32 , C23C16/44
摘要： A method for plasma-enhanced cleaning of a system component (21, 25, 26, 35, 94, 104, 112, 116, 126) in a batch-type processing system and a method for monitoring and controlling the cleaning. The cleaning is performed by introducing a cleaning gas in a process chamber (10, 102) of the batch-type processing system (1, 100), forming a plasma by applying power to a system component (21, 25, 26, 35, 94, 104, 112, 116, 126) within the process chamber (10, 102), exposing a material deposit in the process chamber (10, 102) to the plasma to form a volatile reaction product, and exhausting the reaction product from the processing system (1, 100). Monitoring of the processing system (1, 100) can be carried out to determine cleaning status of the processing system (1, 100) and based upon the status from the monitoring, the processing system (1, 100) is controlled for either continuing the exposing and monitoring or stopping the cleaning process. A batch-type processing system (1, 100) is provided that allows plasma-enhanced cleaning of system components (21, 25, 26, 35, 94, 104, 112, 116, 126), and a system (1, 100) is provided with monitoring and controlling capability.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式