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1. 发明申请

WO2006107415A1 METHOD AND SYSTEM FOR FORMING AN OXYNITRIDE LAYER 审中-公开
标题翻译：用于形成氧化层的方法和系统
公开(公告)号：WO2006107415A1
公开(公告)日：2006-10-12
申请号：PCT/US2006/005418
申请日：2006-02-16
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , IGETA, Masanobu , WAJDA, Cory , O'MEARA, David, L. , SCHEER, Kristen , FURUKAWA, Toshihara
发明人： IGETA, Masanobu , WAJDA, Cory , O'MEARA, David, L. , SCHEER, Kristen , FURUKAWA, Toshihara
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C8/34 , C23C8/36 , H01J37/32192 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/3144 , H01L21/31662
摘要： The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.
摘要翻译：本发明通常提供了在基板上制备氮氧化物膜的方法。衬底的表面暴露于通过紫外线（UV）辐射诱导的包含至少一种包含氧的分子组合物的第一工艺气体的解离形成的氧自由基，以在表面上形成氧化膜。氧化物膜暴露于通过等离子体诱导的包含至少一种包含氮的分子组合物的等离子体诱导解离形成的氮自由基，该等分子组合物基于微波照射经由具有多个狭缝的平面天线构件的等离子体来氮化氧化膜并形成氮氧化物膜。

2. 发明申请

WO2005013348A2 FORMATION OF ULTRA-THIN OXIDE AND OXYNITRIDE LAYERS BY SELF-LIMITING INTERFACIAL OXIDATION 审中-公开
标题翻译：通过自限制界面氧化形成超氧化物和氧化物层
公开(公告)号：WO2005013348A2
公开(公告)日：2005-02-10
申请号：PCT/US2004/024595
申请日：2004-07-30
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , O'MEARA, David, L. , WAJDA, Cory , DIP, Anthony , TOELLER, Michael , FURUKAWA, Toshihara , SCHEER, Kristen , CALLEGARI, Alessandro , BUEHRER, Fred , ZAFAR, Sufi , GOUSEV, Evgeni , CHOU, Anthony , HIGGINS, Paul
发明人： O'MEARA, David, L. , WAJDA, Cory , DIP, Anthony , TOELLER, Michael , FURUKAWA, Toshihara , SCHEER, Kristen , CALLEGARI, Alessandro , BUEHRER, Fred , ZAFAR, Sufi , GOUSEV, Evgeni , CHOU, Anthony , HIGGINS, Paul
IPC分类号： H01L21/314
CPC分类号： H01L21/67098 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662
摘要： Ultra-thin oxide and oxynitride layers are formed utilizing low pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxide and oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, a nitride layer, a high-k layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or, alternatively, using a single-wafer process chamber. One embodiment of the invention provides self-limiting oxidation of Si-substrates that results in Si0 2 layers with a thickness of about 15Å, where the thickness of the Si0 2 layers varies less than about 1 Åover the substrates.
摘要翻译：使用低压处理形成超薄氧化物和氧氮化物层，以实现衬底的自限制氧化并提供超薄氧化物和氧氮化物。待处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层，氮化物层，高k层，或者可以缺少初始介电层。处理可以使用间歇式处理室进行，或者使用单晶圆处理室进行。本发明的一个实施例提供Si衬底的自限制氧化，其导致SiO 2层的厚度为约15，其中SiO 2层的厚度在基板之外变化小于约1埃。

3. 发明申请

WO2006107416A2 METHOD AND SYSTEM FOR FORMING AN OXYNITRIDE LAYER BY PERFORMING OXIDATION AND NITRIDATION CONCURRENTLY 审中-公开
标题翻译：通过同时进行氧化和氮化来形成氧化层的方法和系统
公开(公告)号：WO2006107416A2
公开(公告)日：2006-10-12
申请号：PCT/US2006/005420
申请日：2006-02-16
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , WAJDA, Cory , FURUKAWA, Toshihara , SCHEER, Kristen
发明人： WAJDA, Cory , FURUKAWA, Toshihara , SCHEER, Kristen
IPC分类号： B01J19/08 , H01L21/20
CPC分类号： H01L21/3144 , C23C8/28 , C23C8/36
摘要： A method for preparing an oxynitride film on a substrate comprising forming the oxynitride film by exposing a surface of the substrate to oxygen radicals and nitrogen radicals formed by plasma induced dissociation of a process gas comprising nitrogen and oxygen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits.
摘要翻译：一种在衬底上制备氮氧化物膜的方法，包括通过使衬底的表面暴露于氧自由基和通过基于微波照射的平面等离子体等离子体诱导的包含氮和氧的工艺气体的氮自由基形成氧氮化物膜天线构件具有多个狭缝。

4. 发明申请

WO2005029568A3 INTERFACIAL OXIDATION PROCESS FOR HIGH-k GATE DIELECTRIC PROCESS INTEGRATION 审中-公开
公开(公告)号：WO2005029568A3
公开(公告)日：2005-03-31
申请号：PCT/US2004/026811
申请日：2004-08-19
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , O'MEARA, David, L. , WAJDA, Cory , TAKAHASHI, Tsuyoshi , CALLEGARI, Alessandro , SCHEER, Kristen , ZAFAR, Sufi , JAMISON, Paul
发明人： O'MEARA, David, L. , WAJDA, Cory , TAKAHASHI, Tsuyoshi , CALLEGARI, Alessandro , SCHEER, Kristen , ZAFAR, Sufi , JAMISON, Paul
IPC分类号： H01L21/314
摘要： A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a highk layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.

5. 发明申请

WO2006107417A3 METHOD AND SYSTEM FOR FORMING A HIGH-K DIELECTRIC LAYER 审中-公开
公开(公告)号：WO2006107417A3
公开(公告)日：2006-10-12
申请号：PCT/US2006/005432
申请日：2006-02-16
申请人： TOKYO ELECTRON LIMITED , WAJDA, Cory , IGETA, Masanobu , LEUSINK, Gert
发明人： WAJDA, Cory , IGETA, Masanobu , LEUSINK, Gert
IPC分类号： H01L21/31 , H01L21/469
摘要： A method for preparing an interfacial layer for a high-k dielectric layer on a substrate. A surface of said substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen to nitridate the oxide film to form the interfacial layer. A high-k dielectric layer is formed on said interfacial layer.

6. 发明申请

WO2006104582A2 METHOD AND SYSTEM FOR INCREASING TENSILE STRESS IN A THIN FILM USING COLLIMATED ELECTROMAGNETIC RADIATION 审中-公开
标题翻译：使用集合电磁辐射在薄膜中增加拉伸应力的方法和系统
公开(公告)号：WO2006104582A2
公开(公告)日：2006-10-05
申请号：PCT/US2006/005419
申请日：2006-02-16
申请人： TOKYO ELECTRON LIMITED , IGETA, Masanobu , WAJDA, Cory , LEUSINK, Gert
发明人： IGETA, Masanobu , WAJDA, Cory , LEUSINK, Gert
IPC分类号： H01L23/58 , C23C16/50 , H01L21/4757
CPC分类号： C23C16/56 , C23C16/345 , H01L21/3185 , H01L21/67115 , H01L21/67248 , H01L21/76825 , H01L21/76828 , H01L21/76829
摘要： A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to collimated electro-magnetic (EM) radiation to anisotropically expose the film. The EM radiation can have a component having a wavelength less than about 500 nm. The EM source can include a multi-frequency source of radiation.
摘要翻译：描述了一种用于增加在诸如氮化硅膜之类的衬底上形成的薄膜中的拉伸应力的方法和系统。薄膜可以是平面薄膜，或非平面薄膜，例如在NMOS栅极上形成的氮化物薄膜。将薄膜暴露于准直的电磁（EM）辐射以各向异性地暴露膜。 EM辐射可以具有波长小于约500nm的分量。 EM源可以包括多频辐射源。

7. 发明申请

WO2006104583A3 METHOD AND SYSTEM FOR INCREASING TENSILE STRESS IN A THIN FILM USING MULTI-FREQUENCY ELECTROMAGNETIC RADIATION 审中-公开
公开(公告)号：WO2006104583A3
公开(公告)日：2006-10-05
申请号：PCT/US2006/005433
申请日：2006-02-16
申请人： TOKYO ELECTRON LIMITED , IGETA, Masanobu , WAJDA, Cory , LEUSINK, Gert
发明人： IGETA, Masanobu , WAJDA, Cory , LEUSINK, Gert
IPC分类号： B29C65/00 , B29C65/02 , G02B26/00 , G02B26/08 , G02F1/35 , H01S3/10 , H01L21/00 , H01L21/469 , H01L23/58
摘要： A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electro-magnetic (EM) radiation, such as EM radiation having a wavelength component less than about 500 nm. The EM source can include a multi-frequency source of radiation. Additionally, the source of radiation is collimated in order to selectively treat regions of a non-planar film.

8. 发明申请

WO2005103325A1 A METHOD FOR PROCESSING A SUBSTRATE 审中-公开
标题翻译：一种处理基板的方法
公开(公告)号：WO2005103325A1
公开(公告)日：2005-11-03
申请号：PCT/US2005/004905
申请日：2005-02-15
申请人： TOKYO ELECTRON LIMITED , INTERNATIONAL BUSINESS MACHINES CORPORATION , NAKAMURA, Kazuhito , WAJDA, Cory , MOSCA, Enrico , LEUSINK, Gert , MCFEELY, Fenton, R. , KAWANO, Yumiko , MALHOTRA, Sandra, G.
发明人： NAKAMURA, Kazuhito , WAJDA, Cory , MOSCA, Enrico , LEUSINK, Gert , MCFEELY, Fenton, R. , KAWANO, Yumiko , MALHOTRA, Sandra, G.
IPC分类号： C23C16/16
CPC分类号： C23C16/4581 , C23C16/16
摘要： A method for processing a substrate (25, 620, 720) on a ceramic substrate heater (20, 600, 700) in a process chamber (10). The method includes forming a protective coating (730, 790) on the ceramic substrate heater (20, 600, 700) in the process chamber (10) and processing a substrate (25, 620, 720) on the coated substrate heater. The processing can include providing a substrate (25, 620, 720) to be processed on the coated ceramic substrate heater, performing a process on the substrate (25, 620, 720) by exposing the substrate (25, 620, 720) to a process gas, and removing the processed substrate from the process chamber (10).
摘要翻译：一种用于在处理室（10）中的陶瓷衬底加热器（20,600,700）上处理衬底（25,620,720）的方法。该方法包括在处理室（10）中的陶瓷衬底加热器（20,600,700）上形成保护涂层（730,790）并且处理涂覆的衬底加热器上的衬底（25,620,720）。该处理可以包括提供在被涂覆的陶瓷基板加热器上待处理的基板（25,620,720），通过将基板（25,620,720）暴露于基板（25,620,720）到基板处理气体，以及从所述处理室（10）去除所述经处理的基板。

9. 发明申请

WO2005034210A1 METHOD AND PROCESSING SYSTEM FOR MONITORING STATUS OF SYSTEM COMPONENTS 审中-公开
标题翻译：用于监控系统组件状态的方法和处理系统
公开(公告)号：WO2005034210A1
公开(公告)日：2005-04-14
申请号：PCT/US2004/032170
申请日：2004-09-30
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON AMERICA, INC. , O'MEARA, David, L. , BURDETT, Daniel, Craig , CABRAL, Stephen, H. , LUESINK, Gert , KOSTENKO, John, William , WAJDA, Cory
发明人： O'MEARA, David, L. , BURDETT, Daniel, Craig , CABRAL, Stephen, H. , LUESINK, Gert , KOSTENKO, John, William , WAJDA, Cory
IPC分类号： H01L21/00
CPC分类号： H01L21/67276 , B81C99/0065 , B81C2201/0138 , H01L21/67253
摘要： A method and system for monitoring status of a system component (200, 300) during a process. The method includes exposing a system component (200, 300) to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component (200, 300). Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component (200, 300) can be a consumable system part such as a process tube (25), a shield, a ring, a baffle, an injector, a substrate holder (35, 112), a liner, a pedestal, a cap cover, an electrode, and a heater (15, 20, 65, 70, 122), any of which can further include a protective coating. The processing system (1, 100) includes the system component (200,300) in a process chamber (10, 102), a gas injection system (94, 104) for introducing the reactant gas, a chamber protection system (92, 108) for monitoring the status of the system component (200, 300), and a controller (90, 124) for controlling the processing system (1, 100) in response to the status.
摘要翻译：一种用于在过程期间监视系统组件（200,300）的状态的方法和系统。该方法包括在反应气体过程中将系统组分（200,300）暴露于反应气体中，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程中监测侵蚀产物的释放以确定系统组件的状态（200,300）。可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。系统部件（200,300）可以是消耗系统部件，例如处理管（25），屏蔽件，环形件，挡板，注射器，衬底保持器（35,112），衬垫，基座，帽盖，电极和加热器（15,20,65,70,122），其中任何一个可进一步包括保护涂层。处理系统（1,100）包括处理室（10,102）中的系统组件（200,300），用于引入反应气体的气体注入系统（94,104），用于监视系统组件（200,300）的状态，以及用于响应于该状态控制处理系统（1,100）的控制器（90,124）。

10. 发明申请

WO2005034181A2 METHOD FOR MONITORING STATUS OF SYSTEM COMPONENTS 审中-公开
标题翻译：监控系统组件状态的方法
公开(公告)号：WO2005034181A2
公开(公告)日：2005-04-14
申请号：PCT/US2004/028802
申请日：2004-09-21
申请人： TOKYO ELECTRON LIMITED , O'MEARA, David, L. , BURDETT, Daniel, Craig , CABRAL, Stephen, H. , LEUSINK, Gert , KOSTENKO, John, William , WAJDA, Cory
发明人： O'MEARA, David, L. , BURDETT, Daniel, Craig , CABRAL, Stephen, H. , LEUSINK, Gert , KOSTENKO, John, William , WAJDA, Cory
IPC分类号： H01L
CPC分类号： H01J37/32935 , G01N21/55 , G01N21/59
摘要： A method and system are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component to light from a light source and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.
摘要翻译：提供了一种用于监视批处理系统的处理室中的系统组件的状态的方法和系统。该方法包括将系统组件暴露于来自光源的光并监测光与系统组件的相互作用以确定系统组件的状态。该方法可以在可以包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺的过程中检测来自系统部件的光透射和/或光反射。系统组件可以是消耗系统部件，例如处理管，屏蔽，环，挡板和衬垫，并且还可以包含保护涂层。

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