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1. 发明申请

WO2005104174A1 LOW REFLECTION MICROWAVE WINDOW 审中-公开
标题翻译：低反射微波窗口
公开(公告)号：WO2005104174A1
公开(公告)日：2005-11-03
申请号：PCT/US2005/004069
申请日：2005-02-08
申请人： TOKYO ELECTRON LIMITED , MITROVIC, Andrej, S.
发明人： MITROVIC, Andrej, S.
IPC分类号： H01J37/32
CPC分类号： H01P1/08
摘要： A microwave window (10) for transmitting microwave radiation includes a solid body (12) and a flange (18). The solid body (12) includes a first surface (14) and a second surface (16) spaced apart from each other in a first direction thereby defining a thickness of the solid body in the first direction. The flange (18) is disposed at a periphery of the solid body (12) such that a peripheral portion of the solid body extends a length into the flange in a second direction perpendicular to the first direction. The thickness and the length are selected such that the power of reflections of microwave radiation by the microwave window (10) are no more than about ten times the power of reflections at the minimum value.
摘要翻译：用于传输微波辐射的微波窗（10）包括固体（12）和凸缘（18）。固体（12）包括在第一方向上彼此间隔开的第一表面（14）和第二表面（16），从而在第一方向上限定固体的厚度。凸缘（18）设置在固体（12）的周边，使得固体的周边部分沿垂直于第一方向的第二方向延伸到凸缘中。选择厚度和长度使得微波窗（10）的微波辐射的反射功率不超过最小值反射功率的十倍。

2. 发明申请

WO2005076146A1 METHOD AND SYSTEM FOR MONITORING COMPONENT CONSUMPTION 审中-公开
标题翻译：用于监控组件消耗的方法和系统
公开(公告)号：WO2005076146A1
公开(公告)日：2005-08-18
申请号：PCT/US2004/037196
申请日：2004-11-29
申请人： TOKYO ELECTRON LIMITED , MITROVIC, Andrej, S. , STRANG, Eric
发明人： MITROVIC, Andrej, S. , STRANG, Eric
IPC分类号： G06F15/00
CPC分类号： G01B11/0683 , H01J37/32935 , H01J37/32963
摘要： A method for monitoring consumption of a component, including the steps of emitting a radiation beam onto a first area of the component and detecting a portion of the radiation beam that is refracted by the component. A radiation level signal is generated based at least on a strength of the detected portion of the radiation beam, and a thickness of the component is determined based on the radiation level signal. The thickness of the component is compared to a predetermined thickness value, and a status signal is generated when the comparing step determines that the thickness of the component is substantially equal to or below the predetermined thickness value. When the comparing step determines that the thickness of the component is greater than the predetermined thickness value, the component is exposed to a process that can erode at least a portion of the component.
摘要翻译：一种用于监视部件的消耗的方法，包括以下步骤：将辐射束发射到部件的第一区域上，并检测被部件折射的辐射束的一部分。至少基于辐射束的被检测部分的强度产生辐射水平信号，并且基于辐射水平信号确定分量的厚度。将部件的厚度与预定的厚度值进行比较，并且当比较步骤确定部件的厚度基本上等于或低于预定厚度值时，产生状态信号。当比较步骤确定组件的厚度大于预定厚度值时，组件暴露于可能侵蚀部件的至少一部分的过程。

3. 发明申请

WO2005034185A2 SYSTEM AND METHOD FOR USING FIRST-PRINCIPLES SIMULATION IN A SEMICONDUCTOR MANUFACTURING PROCESS 审中-公开
标题翻译：在半导体制造工艺中使用第一原理模拟的系统和方法
公开(公告)号：WO2005034185A2
公开(公告)日：2005-04-14
申请号：PCT/US2004/028819
申请日：2004-09-30
申请人： TOKYO ELECTRON LIMITED , MITROVIC, Andrej, S.
发明人： MITROVIC, Andrej, S.
IPC分类号： H01L
CPC分类号： G06F17/5018 , G06F2217/10 , G06F2217/12 , G06F2217/80 , H01L22/20 , H01L2924/0002 , Y02P90/265 , H01L2924/00
摘要： A method, system, and computer readable medium for facilitating a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a virtual sensor measurement relating to the process performed by the semiconductor processing tool, and the virtual sensor measurement is used to facilitate the process performed by the semiconductor processing tool. Furthermore, a method is disclosed wherein first principles simulation is then performed using the input data and the physical model to provide a simulation result for the process performed by the semiconductor processing tool, and the simulation result is used as part of a data set that characterizes the process performed by the semiconductor processing tool.
摘要翻译：一种用于促进由半导体处理工具执行的处理的方法，系统和计算机可读介质。该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。使用输入数据和物理模型执行第一原理模拟，以提供与由半导体处理工具执行的处理相关的虚拟传感器测量，并且使用虚拟传感器测量来促进由半导体处理工具执行的处理。此外，公开了一种方法，其中使用输入数据和物理模型执行第一原理模拟，以提供由半导体处理工具执行的处理的仿真结果，并且模拟结果用作表征的数据集的一部分由半导体处理工具执行的处理。

4. 发明申请

WO2005104164A3 HONEYCOMB OPTICAL WINDOW DEPOSITION SHIELD AND METHOD FOR A PLASMA PROCESSING SYSTEM 审中-公开
公开(公告)号：WO2005104164A3
公开(公告)日：2005-11-03
申请号：PCT/US2005/003032
申请日：2005-01-27
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T. , MITROVIC, Andrej, S. , CALABRESE, Paula, A.
发明人： FINK, Steven, T. , MITROVIC, Andrej, S. , CALABRESE, Paula, A.
IPC分类号： C23C14/34 , C23C16/00 , H05H1/00
摘要： An optical window deposition shield (18) including a backing plate (82) having a through hole, and a honeycomb structure (80) having a plurality of adjacent cells configured to allow optical viewing through the honeycomb structure (80). Each cell of the honeycomb structure (80) has an aspect ratio of length to diameter sufficient to impede a processing plasma from traveling through the full length of the cell. A coupling device configured to couple the honeycomb core structure (80) to the backing plate (82) such that the honeycomb structure (80) is aligned with at least a portion of the through hole in the backing plate (82). The optical window deposition shield (18) shields the optical window (17) of a plasma processing apparatus from contact with the plasma.

5. 发明申请

WO2004032178A3 PLASMA PROCESSING SYSTEM AND METHOD 审中-公开
公开(公告)号：WO2004032178A3
公开(公告)日：2004-04-15
申请号：PCT/US2003/030051
申请日：2003-09-25
申请人： TOKYO ELECTRON LIMITED , LUDVIKSSON, Audunn , STRANG, Eric, J. , MITROVIC, Andrej, S.
发明人： LUDVIKSSON, Audunn , STRANG, Eric, J. , MITROVIC, Andrej, S.
IPC分类号： H01J37/32
摘要： A plasma processing system and method for operating a diagnostic system in conjunction with a plasma processing system are provided. The diagnostic system is in communication with a plasma processing chamber of the plasma processing system and includes a diagnostic sensor to detect a plasma process condition. The diagnostic system is configured to substantially reduce contamination of the diagnostic sensor. The method includes substantially reducing contamination of the diagnostic sensor and detecting a condition of the plasma process and/or a substrate in the processing chamber.

6. 发明申请

WO2003025971A3 PLASMA PROCESSING APPARATUS WITH COIL MAGNET SYSTEM 审中-公开
公开(公告)号：WO2003025971A3
公开(公告)日：2003-03-27
申请号：PCT/US2002/027978
申请日：2002-09-04
申请人： TOKYO ELECTRON LIMITED , MITROVIC, Andrej, S.
发明人： MITROVIC, Andrej, S.
IPC分类号： H01J37/32
摘要： A method for processing a workpiece is carried out with a plasma derived from a process gas in a plasma chamber of a plasma processing apparatus during a plasma processing operation. The apparatus includes an array of electromagnets mounted circumferentially around the plasma chamber. The method comprises generating a plasma from a process gas within the chamber and causing plasma particles to strike the workpiece, selecting distributions of current signals for the electromagnets, and applying each selected distribution to the electromagnets to impose more than one magnetic field topology on the plasma during the plasma processing operation.

7. 发明申请

WO2004095502A2 PLASMA PROCESSING SYSTEM AND METHOD 审中-公开
标题翻译：等离子体处理系统和方法
公开(公告)号：WO2004095502A2
公开(公告)日：2004-11-04
申请号：PCT/US2004/001406
申请日：2004-01-21
申请人： TOKYO ELECTRON LIMITED , FINK, Steven, T. , MOROZ, Paul , STRANG, Eric, J. , MITROVIC, Andrej, S.
发明人： FINK, Steven, T. , MOROZ, Paul , STRANG, Eric, J. , MITROVIC, Andrej, S.
IPC分类号： H01J37/00
CPC分类号： H01J37/3244 , H01J2237/022
摘要： A plasma processing system includes a chamber containing a plasma processing region and a chuck constructed and arranged to support a substrate within the chamber in the processing region. The plasma processing system further includes at least one gas injection passage in communication with the chamber and configured to facilitate removal of particles from the chamber by passing purge gas therethrough. In one embodiment, the plasma processing system can include an electrode configured to attract or repel particles in the chamber by electrostatic force when the electrode is biased with DC or RF power. A method of processing a substrate in a plasma processing system includes removing particles in a chamber of the plasma processing system by supplying purge gas through at least one gas injection passage in communication with the chamber.
摘要翻译：等离子体处理系统包括包含等离子体处理区域的腔室和构造和布置成在处理区域内的腔室内支撑衬底的卡盘。等离子体处理系统还包括至少一个与室连通的气体注入通道，并且构造成便于通过吹扫气体从腔室中除去颗粒。在一个实施例中，等离子体处理系统可以包括电极，其被配置为当电极用DC或RF功率偏置时通过静电力吸引或排斥腔室中的颗粒。一种在等离子体处理系统中处理衬底的方法，包括通过与室连通的至少一个气体注入通道供应净化气体来去除等离子体处理系统的腔室中的颗粒。

8. 发明申请

WO2004088730A1 METHOD AND SYSTEM FOR MONITORING RF IMPEDANCE TO DETERMINE THE PARAMETERS OF A WAFER ON AN ELECTROSTATIC CHUCK 审中-公开
标题翻译：用于监测RF阻抗的方法和系统，用于确定静电卡盘上的波形参数
公开(公告)号：WO2004088730A1
公开(公告)日：2004-10-14
申请号：PCT/US2004/009382
申请日：2004-03-26
申请人： TOKYO ELECTRON LIMITED , MITROVIC, Andrej, S.
发明人： MITROVIC, Andrej, S.
IPC分类号： H01L21/00
CPC分类号： H01L21/67248 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： A method and system for monitoring and/or controlling the conditions of a wafer on an electrostatic chuck during plasma processing. The method and system include utilizing backflow gas pressure and DC clamping voltage as control variables to adjust the wafer temperature based upon impedance measurements determined by RIF sensors located in the electrostatic chuck RIF feed line. The method and system further include utilizing the clamping status of the wafer on the electrostatic chuck to monitor impedance during the plasma process.
摘要翻译：一种用于在等离子体处理期间监测和/或控制静电卡盘上的晶片的状态的方法和系统。该方法和系统包括利用回流气体压力和直流钳位电压作为控制变量，以基于位于静电卡盘RIF馈送线中的RIF传感器确定的阻抗测量来调整晶片温度。该方法和系统还包括利用静电卡盘上的晶片的夹紧状态来监测等离子体处理期间的阻抗。

9. 发明申请

WO2004048942A1 PLASMA PROCESSING SYSTEM AND METHOD 审中-公开
标题翻译：等离子体处理系统和方法
公开(公告)号：WO2004048942A1
公开(公告)日：2004-06-10
申请号：PCT/US2003/037513
申请日：2003-11-24
申请人： TOKYO ELECTRON LIMITED , MITROVIC, Andrej, S.
发明人： MITROVIC, Andrej, S.
IPC分类号： G01N15/02
CPC分类号： G01N15/0227
摘要： A plasma processing system includes a magnetic field generator that can produce a magnetic field and a sheet optic element that can produce a light sheet capable of illuminating particles in a processing chamber of the system. An imaging device can acquire image data corresponding to the particles illuminated by the light sheet. The magnetic field generator, the sheet optic element and the imaging device can be positioned relative to one another to access the plasma. An image processor can process the image data so as to obtain the concentration of particles in the light sheet. A method of measuring particle concentration in a plasma processing system includes positioning the magnetic field generator, a sheet optic element and an imaging device relative to one another to access the plasma and obtaining the concentration of particles in the light sheet. A method of minimizing particles in the chamber is also provided.
摘要翻译：等离子体处理系统包括能够产生磁场的磁场发生器和能够产生能够照射系统的处理室中的颗粒的光片的片状光学元件。成像装置可以获取与由轻片照射的颗粒相对应的图像数据。磁场发生器，片状光学元件和成像装置可以相对于彼此定位以访问等离子体。图像处理器可以处理图像数据，以获得光片中的颗粒的浓度。测量等离子体处理系统中的颗粒浓度的方法包括相对于彼此定位磁场发生器，片状光学元件和成像装置以访问等离子体并获得光片中的颗粒的浓度。还提供了使腔室中的颗粒最小化的方法。

10. 发明申请

WO2003025971A2 PLASMA REACTOR COIL MAGNET SYSTEM 审中-公开
标题翻译：等离子体反应器线圈磁体系统
公开(公告)号：WO2003025971A2
公开(公告)日：2003-03-27
申请号：PCT/US2002/027978
申请日：2002-09-04
申请人： TOKYO ELECTRON LIMITED , MITROVIC, Andrej, S.
发明人： MITROVIC, Andrej, S.
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32935
摘要： A method for processing a workpiece is carried out with a plasma derived from a process gas in a plasma chamber of a plasma processing apparatus during a plasma processing operation. The apparatus includes an array of electromagnets mounted circumferentially around the plasma chamber. The method comprises generating a plasma from a process gas within the chamber and causing plasma particles to strike the workpiece, selecting distributions of current signals for the electromagnets, and applying each selected distribution to the electromagnets to impose more than one magnetic field topology on the plasma during the plasma processing operation.
摘要翻译：在等离子体处理操作期间，用等离子体处理装置的等离子体室中的处理气体的等离子体进行处理工件的方法。该装置包括围绕等离子体室周向安装的电磁体阵列。该方法包括从室内的工艺气体产生等离子体并使等离子体颗粒撞击工件，选择电磁体的电流信号分布，以及将每个选择的分布应用于电磁体，以在等离子体上施加多于一个的磁场拓扑结构在等离子体处理操作期间。

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