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1. 发明申请

WO2004003822A1 CONTROLLING A MATERIAL PROCESSING TOOL AND PERFORMANCE DATA 审中-公开
标题翻译：控制材料加工工具和性能数据
公开(公告)号：WO2004003822A1
公开(公告)日：2004-01-08
申请号：PCT/US2003/016239
申请日：2003-06-27
申请人： TOKYO ELECTRON LIMITED , LAM, Hieu, A. , YUE, Hongyu
发明人： LAM, Hieu, A. , YUE, Hongyu
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/31443 , G05B2219/32366 , G05B2219/45031 , Y02P90/20 , Y02P90/26
摘要： According to an embodiment of the present invention, a material processing systeme (1) including a process tool (10) and a process performance control system (100). The process performance control system (100) includes a process performance controller (55) coupled to the process tool (10), where the process performance controller (55) includes a process performance prediction model (110), a process recipe correction filter (120), a process controller (130), and process performance model correction algorithm (150). The process performance prediction model (110) is configured to receive tool data from a plurality of sensors coupled to process tool (10) and to predict process performance data. The process recipe correction filter (120) is coupled to the process performance prediction model (110) and configured to receive predicted process performance data and generate a process recipe correction for run-to-run process control. The process controller (130) is coupled to the process recipe correction filter (120) and is configured to update a process recipe according to the process recipe correction.
摘要翻译：根据本发明的实施例，一种包括处理工具（10）和过程执行控制系统（100）的材料处理系统（1）。过程性能控制系统（100）包括耦合到处理工具（10）的过程性能控制器（55），其中过程性能控制器（55）包括过程性能预测模型（110），过程配方校正过滤器（120）），过程控制器（130）和过程执行模型校正算法（150）。过程性能预测模型（110）被配置为从耦合到过程工具（10）的多个传感器接收工具数据并且预测过程性能数据。过程配方校正滤波器（120）耦合到过程性能预测模型（110）并且被配置为接收预测的过程性能数据并且生成用于运行过程控制的过程配方校正。过程控制器（130）耦合到过程配方校正过滤器（120），并被配置为根据处理配方校正更新过程配方。

2. 发明申请

WO2004042788A2 METHOD AND APPARATUS FOR DETERMINING AN ETCH PROPERTY USING AN ENDPOINT SIGNAL 审中-公开
标题翻译：使用端点信号确定蚀刻属性的方法和装置
公开(公告)号：WO2004042788A2
公开(公告)日：2004-05-21
申请号：PCT/US2003/031528
申请日：2003-10-31
申请人： TOKYO ELECTRON LIMITED , YUE, Hongyu , LAM, Hieu, A.
发明人： YUE, Hongyu , LAM, Hieu, A.
IPC分类号： H01L
CPC分类号： H01J37/32935 , H01J37/32963
摘要： The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.
摘要翻译：本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统，包括处理室，耦合到处理室并被配置为测量至少一个端点信号的诊断系统，以及耦合到诊断系统的控制器，并且被配置为确定从端点信号原位蚀刻速率和蚀刻速率均匀性中的至少一个。此外，提出了确定用于蚀刻等离子体处理系统中的衬底上的层的蚀刻性质的原位方法，其包括以下步骤：提供该层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统来测量至少一个端点信号，其中所述端点信号包括端点转换; 以及从所述厚度与所述端点转变期间的时间与所述蚀刻的开始时间之间的差的比率确定所述蚀刻速率。

3. 发明申请

WO2004003969A2 METHOD AND SYSTEM FOR PREDICTING PROCESS PERFORMANCE USING MATERIAL PROCESSING TOOL AND SENSOR DATA 审中-公开
标题翻译：使用材料加工工具和传感器数据预测过程性能的方法和系统
公开(公告)号：WO2004003969A2
公开(公告)日：2004-01-08
申请号：PCT/US2003/016245
申请日：2003-06-27
申请人： TOKYO ELECTRON LIMITED , LAM, Hieu, A. , YUE, Hongyu , SHRINER, John
发明人： LAM, Hieu, A. , YUE, Hongyu , SHRINER, John
IPC分类号： H01L
CPC分类号： H01L22/20 , G05B19/41875 , G05B23/0254 , G05B2219/31357 , G05B2219/32179 , G05B2219/32194 , G05B2219/45028 , G05B2219/45031 , H01J37/32935 , Y02P90/14 , Y02P90/22
摘要： A material processing system including a process tool and a process performance prediction system. The performance prediction system includes sensors coupled to the tool to measure tool data and a controller coupled to the sensors to receive tool data, where the controller is configured to predict the process performance for the tool using the tool data. A method for detecting a fault in a material processing system using a process performance prediction model is also provided. The method includes preparing the tool, initiating a process in the tool, and recording tool data to form to a tool data matrix. The method also includes performing a matrix multiplication of the tool data matrix and a correlation matrix to form predicted process performance data, where the correlation matrix includes the performance prediction model, comparing the predicted data with target data, and determining a fault condition of the processing system from the comparing step.
摘要翻译：一种材料处理系统，包括处理工具和过程性能预测系统。性能预测系统包括耦合到工具以测量工具数据的传感器和耦合到传感器以接收工具数据的控制器，其中控制器被配置为使用工具数据预测工具的过程性能。还提供了使用过程性能预测模型来检测材料处理系统中的故障的方法。该方法包括准备工具，启动工具中的过程，以及记录工具数据以形成工具数据矩阵。该方法还包括执行刀具数据矩阵和相关矩阵的矩阵乘法以形成预测过程性能数据，其中相关矩阵包括性能预测模型，将预测数据与目标数据进行比较，以及确定处理的故障状况系统从比较步骤。

4. 发明申请

WO2006007055A1 METHOD AND APPARATUS FOR USING A PRESSURE CONTROL SYSTEM TO MONITOR A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：使用压力控制系统监测等离子体处理系统的方法和装置
公开(公告)号：WO2006007055A1
公开(公告)日：2006-01-19
申请号：PCT/US2005/015927
申请日：2005-05-06
申请人： TOKYO ELECTRON LIMITED , YUE, Hongyu , LAM, Hieu, A.
发明人： YUE, Hongyu , LAM, Hieu, A.
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , H01J37/32935
摘要： A method and apparatus is presented for using a pressure control system to monitor a plasma processing system. By monitoring variations in the state of the pressure control system, a fault condition, an erroneous fault condition, or a service condition can be detected. For example, the service condition can include monitoring the accumulation of residue between successive preventative maintenance events.
摘要翻译：提出了一种使用压力控制系统监测等离子体处理系统的方法和装置。通过监视压力控制系统的状态的变化，可以检测故障状况，错误故障状况或服务条件。例如，服务条件可以包括在连续的预防性维护事件之间监视残留物的累积。

5. 发明申请

WO2004074952A2 METHOD FOR AUTOMATIC CONFIGURATION OF A PROCESSING SYSTEM 审中-公开
标题翻译：自动配置加工系统的方法
公开(公告)号：WO2004074952A2
公开(公告)日：2004-09-02
申请号：PCT/US2004/004175
申请日：2004-02-12
申请人： TOKYO ELECTRON LIMITED , LAM, Hieu, A. , CHAMNESS, Kevin, Andrew , YUE, Hongyu , FATKE, David , HARADA, Satoshi , HUME, Edward, Carl, III. , WILLIS, James, Edward
发明人： LAM, Hieu, A. , CHAMNESS, Kevin, Andrew , YUE, Hongyu , FATKE, David , HARADA, Satoshi , HUME, Edward, Carl, III. , WILLIS, James, Edward
IPC分类号： G05B19/4093
CPC分类号： G05B19/41865 , G05B19/41845 , G05B2219/31334 , G05B2219/32191 , G05B2219/45031 , Y02P90/16 , Y02P90/185 , Y02P90/20 , Y02P90/22 , Y02P90/86
摘要： A method of automatically configuring an Advanced Process Control (APC) system for a semiconductor manufacturing environment in which an auto-configuration script is generated for executing an auto-configuration program. The auto-configuration script activates default values for input to the auto-configuration program. The auto-configuration script is executed to generate an enabled parameter file output from the auto-configuration program. The enabled parameter file identifies parameters for statistical process control (SPC) chart generation.
摘要翻译：一种自动配置用于半导体制造环境的高级过程控制（APC）系统的方法，其中生成用于执行自动配置程序的自动配置脚本。自动配置脚本激活自动配置程序输入的默认值。执行自动配置脚本以生成从自动配置程序输出的已启用参数文件。启用的参数文件标识统计过程控制（SPC）图生成的参数。

6. 发明申请

WO2004105101A2 A PROCESS SYSTEM HEALTH INDEX AND METHOD OF USING THE SAME 审中-公开
标题翻译： A PROCESS SYSTEM HEALTH INDEX及其使用方法
公开(公告)号：WO2004105101A2
公开(公告)日：2004-12-02
申请号：PCT/US2004/005240
申请日：2004-03-17
申请人： TOKYO ELECTRON LIMITED , YUE, Hongyu , LAM, Hieu, A.
发明人： YUE, Hongyu , LAM, Hieu, A.
IPC分类号： H01L
CPC分类号： H01J37/3299 , H01J37/32935 , H01L21/67253 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method of monitoring a processing system for processing a substrate during the course of semiconductor manufacturing is described. The method comprises acquiring data from the processing system for a plurality of observations. It further comprises constructing a principal components analysis (PCA) model from the data, wherein a weighting factor is applied to at least one of the data variables in the acquired data. The PCA mode is utilized in conjunction with the acquisition of additional data, and at least one statistical quantity is determined for each additional observation. Upon setting a control limit for the processing system, the at least one statistical quantity is compared with the control limit for each additional observation. When, for example, the at least one statistical quantity exceeds the control limit, a fault for the processing system is detected.
摘要翻译：描述了在半导体制造过程中监视用于处理衬底的处理系统的方法。该方法包括从处理系统获取多个观察数据。其还包括从数据构建主成分分析（PCA）模型，其中对所获取的数据中的至少一个数据变量应用加权因子。 PCA模式与采集附加数据一起使用，并且每个附加观察确定至少一个统计量。在设置处理系统的控制限制时，将至少一个统计量与每个附加观察的控制限制进行比较。当例如至少一个统计量超过控制极限时，检测到处理系统的故障。

7. 发明申请

WO2003103017A3 METHOD AND SYSTEM OF DETERMINING CHAMBER SEASONING CONDITION BY OPTICAL EMISSION 审中-公开
公开(公告)号：WO2003103017A3
公开(公告)日：2003-12-11
申请号：PCT/US2003/015391
申请日：2003-05-29
申请人： TOKYO ELECTRON LIMITED , LAM, Hieu, A. , YUE, Hongyu , SHRINER, John
发明人： LAM, Hieu, A. , YUE, Hongyu , SHRINER, John
IPC分类号： G01N21/00
摘要： A plasma processing system that comprises a process chamber, a plasma source, a light detection device and a controller. The controller is useful for determining a seasoning state of the plasma processing system. The present invention further provides a method of determining the seasoning state of a plasma processing system comprising the steps of forming a first plasma in the process chamber utilizing the plasma source; measuring a first signal related to light emitted from the first plasma using the light detection device and storing the first signal using the controller; forming a second plasma in the process chamber utilizing the plasma source; measuring a second signal related to light emitted from the second plasma using the light detection device and storing the second signal using the controller; and correlating a change between the first signal and the second signal with a seasoning state of the plasma processing system.

8. 发明申请

WO2003103017A2 METHOD AND SYSTEM OF DETERMINING CHAMBER SEASONING CONDITION BY OPTICAL EMISSION 审中-公开
标题翻译：通过光学发射测定室温条件的方法和系统
公开(公告)号：WO2003103017A2
公开(公告)日：2003-12-11
申请号：PCT/US2003/015391
申请日：2003-05-29
申请人： TOKYO ELECTRON LIMITED , LAM, Hieu, A. , YUE, Hongyu , SHRINER, John
发明人： LAM, Hieu, A. , YUE, Hongyu , SHRINER, John
IPC分类号： H01L
CPC分类号： H01L21/67253 , A61K48/005 , C23C16/4404 , C23C16/52 , G01N33/574 , G01N2333/4706 , H01J37/32935 , H01L21/67069
摘要： A plasma processing system that comprises a process chamber, a plasma source, a light detection device and a controller. The controller is useful for determining a seasoning state of the plasma processing system. The present invention further provides a method of determining the seasoning state of a plasma processing system comprising the steps of forming a first plasma in the process chamber utilizing the plasma source; measuring a first signal related to light emitted from the first plasma using the light detection device and storing the first signal using the controller; forming a second plasma in the process chamber utilizing the plasma source; measuring a second signal related to light emitted from the second plasma using the light detection device and storing the second signal using the controller; and correlating a change between the first signal and the second signal with a seasoning state of the plasma processing system.
摘要翻译：一种等离子体处理系统，包括处理室，等离子体源，光检测装置和控制器。控制器可用于确定等离子体处理系统的调味状态。本发明还提供了一种确定等离子体处理系统的调味状态的方法，包括以下步骤：利用等离子体源在处理室中形成第一等离子体; 使用所述光检测装置测量与从所述第一等离子体发射的光有关的第一信号，并使用所述控制器存储所述第一信号; 在所述处理室中利用所述等离子体源形成第二等离子体; 使用所述光检测装置测量与从所述第二等离子体发射的光相关的第二信号，并使用所述控制器存储所述第二信号; 以及用所述等离子体处理系统的调节状态将所述第一信号和所述第二信号之间的变化相关联。

9. 发明公开

EP1602015A2 METHOD FOR AUTOMATIC CONFIGURATION OF A PROCESSING SYSTEM 审中-公开
标题翻译：方法加工车间的自动配置
公开(公告)号：EP1602015A2
公开(公告)日：2005-12-07
申请号：EP04710646.3
申请日：2004-02-12
申请人： TOKYO ELECTRON LIMITED
发明人： LAM, Hieu, A. , CHAMNESS, Kevin, Andrew , YUE, Hongyu , FATKE, David , HARADA, Satoshi , HUME, Edward, Carl, III. , WILLIS, James, Edward
IPC分类号： G05B19/418 , H01L21/66
CPC分类号： G05B19/41865 , G05B19/41845 , G05B2219/31334 , G05B2219/32191 , G05B2219/45031 , Y02P90/16 , Y02P90/185 , Y02P90/20 , Y02P90/22 , Y02P90/86
摘要： A method of automatically configuring an Advanced Process Control (APC) system for a semiconductor manufacturing environment in which an auto-configuration script is generated for executing an auto-configuration program. The auto-configuration script activates default values for input to the auto-configuration program. The auto-configuration script is executed to generate an enabled parameter file output from the auto-configuration program. The enabled parameter file identifies parameters for statistical process control (SPC) chart generation.

10. 发明授权

EP1639632B1 Method of monitoring a processing system 有权
标题翻译：监视处理系统的方法
公开(公告)号：EP1639632B1
公开(公告)日：2017-06-07
申请号：EP04721420.0
申请日：2004-03-17
申请人： TOKYO ELECTRON LIMITED
发明人： YUE, Hongyu , LAM, Hieu, A.
IPC分类号： H01L21/66 , H01L21/67 , H01J37/32
CPC分类号： H01J37/3299 , H01J37/32935 , H01L21/67253 , H01L22/20 , H01L2924/0002 , H01L2924/00

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