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1. 发明申请

WO2013019810A9 METHOD AND DEVICE FOR CONTROLLING PATTERN AND STRUCTURE FORMATION BY AN ELECTRIC FIELD 审中-公开
公开(公告)号：WO2013019810A9
公开(公告)日：2013-02-07
申请号：PCT/US2012/049040
申请日：2012-07-31
申请人： TOKYO ELECTRON LIMITED , BRCKA, Jozef , FAGUET, Jacques , LEE, Eric, M. , YUE, Hongyu
发明人： BRCKA, Jozef , FAGUET, Jacques , LEE, Eric, M. , YUE, Hongyu
IPC分类号： H01J37/32 , B03C5/00
摘要： A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.

2. 发明申请

WO2010033469A2 DIELECTRIC MATERIAL TREATMENT SAYSTEM AND METHOD OF OPERATING 审中-公开
标题翻译：电介质材料处理方法和操作方法
公开(公告)号：WO2010033469A2
公开(公告)日：2010-03-25
申请号：PCT/US2009/056871
申请日：2009-09-14
申请人： TOKYO ELECTRON LIMITED , LIU, Junjun , FAGUET, Jacques , LEE, Eric, M. , TOMA, Dorel, I. , YUE, Hongyu
发明人： LIU, Junjun , FAGUET, Jacques , LEE, Eric, M. , TOMA, Dorel, I. , YUE, Hongyu
IPC分类号： G21K5/00
CPC分类号： H01L21/2686 , H01L21/67115 , H01L21/67184 , H01L21/67207
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个处理模块配置用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

3. 发明申请

WO2011156055A1 APPARATUS AND METHOD FOR CHEMICAL VAPOR DEPOSITION CONTROL 审中-公开
标题翻译：化学气相沉积控制的装置和方法
公开(公告)号：WO2011156055A1
公开(公告)日：2011-12-15
申请号：PCT/US2011/033393
申请日：2011-04-21
申请人： TOKYO ELECTRON LIMITED , LEE, Eric, M. , FAGUET, Jacques , STRANG, Eric, J.
发明人： LEE, Eric, M. , FAGUET, Jacques , STRANG, Eric, J.
IPC分类号： C23C16/00 , B05C11/02 , C23C14/00
CPC分类号： C23C16/52 , B05D1/60 , B05D3/002 , C23C16/44 , C23C16/45565
摘要： A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate. Furthermore, a method of depositing a thin film on a substrate in a deposition system is described.
摘要翻译：本发明描述了一种用于其中的气体加热装置及其处理系统，用于使用气相沉积工艺在基片上沉积薄膜。气体加热装置包括加热元件阵列，该加热元件阵列具有多个加热元件区域，该多个加热元件区域被配置为在多个加热元件区域中或通过所述多个加热元件区域接收成膜组合物的流动，以便导致成膜组合物的一种或多种成分的热解加热时。另外，处理系统可以包括构造成支撑衬底的衬底保持器。衬底保持器可以包括后侧气体供应系统，其构造成将热传递气体供应到所述衬底的背面，其中所述背侧气体供应系统被配置为独立地将所述传热气体供应到所述衬底的背侧的多个区域。此外，描述了在沉积系统中在衬底上沉积薄膜的方法。

4. 发明申请

WO2010111313A1 CHEMICAL VAPOR DEPOSITION METHOD 审中-公开
标题翻译：化学蒸气沉积法
公开(公告)号：WO2010111313A1
公开(公告)日：2010-09-30
申请号：PCT/US2010/028377
申请日：2010-03-24
申请人： TOKYO ELECTRON LIMITED , AIR PROCUTS AND CHEMICALS, INC. , LEE, Eric, M. , VRTIS, Raymond, Nicholas , O'NEILL, Mark, Leonard , HURLEY, Patrick, Timothy , FAGUET, Jacques , MATSUMOTO, Takashi , AKIYAMA, Osayuki
发明人： LEE, Eric, M. , VRTIS, Raymond, Nicholas , O'NEILL, Mark, Leonard , HURLEY, Patrick, Timothy , FAGUET, Jacques , MATSUMOTO, Takashi , AKIYAMA, Osayuki
IPC分类号： H01L21/363 , C23C16/00
CPC分类号： C23C16/30 , C23C16/18 , C23C16/401 , C23C16/4557 , C23C16/46 , C23C16/56
摘要： A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.
摘要翻译：描述了用于在衬底的表面上沉积薄膜的化学气相沉积（CVD）方法。 CVD方法包括将衬底设置在处理室中的衬底保持器上，并将工艺气体引入到处理室中，其中工艺气体包括化学前体。处理气体暴露于与基板保持器分离的非电离热源以引起化学前体的分解。薄膜沉积在基底上。

5. 发明申请

WO2012112334A2 METHOD OF OPERATING FILAMENT ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM 审中-公开
标题翻译：操作FILAMENT辅助化学气相沉积系统的方法
公开(公告)号：WO2012112334A2
公开(公告)日：2012-08-23
申请号：PCT/US2012/024045
申请日：2012-02-07
申请人： TOKYO ELECTRON AMERICA, INC. , TOKYO ELECTRON LIMITED , LEE, Eric, M. , FAGUET, Jacques
发明人： LEE, Eric, M. , FAGUET, Jacques
IPC分类号： C23C16/02 , C23C16/44 , C23C16/452 , C23C16/46 , C23C16/56 , B05D3/00
CPC分类号： C23C16/44 , C23C16/452 , C23C16/46 , C23C16/56
摘要： A method of performing a filament-assisted chemical vapor deposition process is described. The method includes providing a substrate holder (220, 320, 420, 1020) in a process chamber (410) of a chemical vapor deposition system (400, 600, 1001, 2001), providing a non-ionizing heat source separate from the substrate holder (220, 320, 420, 1020) in the process chamber (410), disposing a substrate (225, 425, 1025) on the substrate holder (220, 320, 420, 1020), introducing a film forming composition (532) to the process chamber (410), thermally fragmenting the film forming composition (532) using the non-ionizing heat source, and forming a thin film on the substrate (225, 425, 1025) in the process chamber (410). The non-ionizing heat source includes a gas heating device (250, 445, 550, 645, 750, 800, 900, 1045, 2045) through and/or over which the film forming composition (532) flows. The method further includes remotely producing a reactive composition, and introducing the reactive composition to the process chamber (410) to interact with the substrate (225, 425, 1025), wherein the reactive composition is introduced sequentially and/or simultaneously with the introducing the film forming composition (532).
摘要翻译：描述了进行长丝辅助化学气相沉积工艺的方法。该方法包括在化学气相沉积系统（400,600,1001,2001）的处理室（410）中提供衬底保持器（220,320,420,1020），提供与衬底分离的非电离热源在所述处理室（410）中的保持器（220,320,420,1020），将衬底（225,425,1025）设置在所述衬底保持器（220,320,420,1020）上，引入成膜组合物（532）到处理室（410）中，使用非电离热源将成膜组合物热裂化（532），并在处理室（410）中的衬底（225,425,1025）上形成薄膜。非电离热源包括通过成膜组合物（532）流过和/或在其上流动的气体加热装置（250,445,554,650,750,800,900,1045,2045）。该方法还包括远程产生反应性组合物，并将反应性组合物引入处理室（410）以与基底（225,425,1025）相互作用，其中反应性组合物依次引入和/或同时引入成膜组合物（532）。

6. 发明申请

WO2007055849A3 MULTI-STEP SYSTEM AND METHOD FOR CURING A DIELECTRIC FILM 审中-公开
公开(公告)号：WO2007055849A3
公开(公告)日：2007-05-18
申请号：PCT/US2006/039260
申请日：2006-10-06
申请人： TOKYO ELECTRON LIMITED , LIU, Junjun , LEE, Eric, M. , TOMA, Dorel, L.
发明人： LIU, Junjun , LEE, Eric, M. , TOMA, Dorel, L.
IPC分类号： H01L21/30
摘要： A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.

7. 发明申请

WO2009036249A1 METHOD FOR CURING A DIELECTRIC FILM 审中-公开
标题翻译：用于固化电介质膜的方法
公开(公告)号：WO2009036249A1
公开(公告)日：2009-03-19
申请号：PCT/US2008/076134
申请日：2008-09-12
申请人： TOKYO ELECTRON LIMITED , LIU, Junjun , TOMA, Dorel, I. , LEE, Eric, M.
发明人： LIU, Junjun , TOMA, Dorel, I. , LEE, Eric, M.
IPC分类号： H01L21/00
CPC分类号： H01L21/67115 , H01L21/3105 , H01L21/31058
摘要： A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to ultraviolet (UV) radiation. Following the UV exposure, the dielectric film is exposed to IR radiation.
摘要翻译：描述了在基底上固化低介电常数（低k）电介质膜的方法，其中低k电介质膜的介电常数小于大约4的值。该方法包括将低k电介质膜对紫外线（UV）辐射。在UV曝光之后，电介质膜暴露于IR辐射。

8. 发明申请

WO2009111473A2 METHOD FOR CURING A POROUS LOW DIELECTRIC CONSTANT DIELECTRIC FILM 审中-公开
标题翻译：用于固化多孔低介电常数介质膜的方法
公开(公告)号：WO2009111473A2
公开(公告)日：2009-09-11
申请号：PCT/US2009/035878
申请日：2009-03-03
申请人： TOKYO ELECTRON LIMITED , LIU, Junjun , TOMA, Dorel, I. , LEE, Eric, M.
发明人： LIU, Junjun , TOMA, Dorel, I. , LEE, Eric, M.
IPC分类号： H01L21/3105 , H01L21/268
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/02345 , H01L21/02348 , H01L21/3105
摘要： A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了在基底上固化低介电常数（低k）电介质膜的方法，其中低k电介质膜的介电常数小于大约4的值。该方法包括将低k电介质膜对红外（IR）辐射和紫外线（UV）辐射。

9. 发明申请

WO2005053011A1 STRUCTURE COMPRISING TUNABLE ANTI-REFLECTIVE COATING AND METHOD OF FORMING THEREOF 审中-公开
标题翻译：包含可逆反射涂层的结构及其形成方法
公开(公告)号：WO2005053011A1
公开(公告)日：2005-06-09
申请号：PCT/US2004/030915
申请日：2004-10-12
申请人： TOKYO ELECTRON LIMITED , WETZEL, Jeffrey, T. , WANG, David, C. , LEE, Eric, M. , TOMA, Dorel, Ioan
发明人： WETZEL, Jeffrey, T. , WANG, David, C. , LEE, Eric, M. , TOMA, Dorel, Ioan
IPC分类号： H01L21/4763
CPC分类号： H01L21/76811 , H01L21/0276 , H01L21/31144 , H01L21/76802 , H01L21/76808 , H01L21/7681 , H01L21/76813
摘要： An interconnect structure in back end of line (BEOL) applications comprising a tunable etch resistant anti-reflective (TERA) coating is described. The TERA coating can, for example, be incorporated within a single damascene structure, or a dual damascene structure. The TERA coating can serve as part of a lithographic mask for forming the interconnect structure, or it may serve as a hard mask, a chemical mechanical polishing (CMP) stop layer, or a sacrificial layer during CMP.
摘要翻译：描述了后端行（BEOL）应用中的互连结构，其包括可调蚀抗蚀抗反射（TERA）涂层。例如，TERA涂层可以结合在单个镶嵌结构内或双镶嵌结构中。 TERA涂层可用作用于形成互连结构的光刻掩模的一部分，或者可以在CMP期间用作硬掩模，化学机械抛光（CMP）停止层或牺牲层。

10. 发明申请

WO2007040834A2 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS 审中-公开
标题翻译：用于处理电介质膜的一体化处理步骤
公开(公告)号：WO2007040834A2
公开(公告)日：2007-04-12
申请号：PCT/US2006/031773
申请日：2006-08-15
申请人： TOKYO ELECTRON LIMITED , LEE, Eric, M. , TOMA, Dorel, I.
发明人： LEE, Eric, M. , TOMA, Dorel, I.
IPC分类号： H01L21/31 , H01L21/469 , H01L21/20
CPC分类号： H01L21/3105 , H01L21/02063 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76828
摘要： A method and computer readable medium for treating a dielectric film on one or more substrates includes disposing the one or more substrates in a process chamber configured to perform plural treatment processes on a dielectric film. The dielectric film is formed on at least one of said one or more substrates, wherein the dielectric film includes an initial dielectric constant having a value less than the dielectric constant of SiO 2 . A thermal treatment process that includes annealing the one or more substrates is performed in order to remove volatile constituents from the dielectric film on the one or more substrates and a chemical treatment process is performed on the one or more substrates, including: introducing a treating compound to the dielectric film on the one or more substrates, and heating the one or more substrates.
摘要翻译：一种用于处理一个或多个基板上的电介质膜的方法和计算机可读介质包括将一个或多个基板设置在被配置为在电介质膜上执行多个处理工艺的处理室中。电介质膜形成在所述一个或多个基板中的至少一个上，其中介电膜包括具有小于SiO 2介电常数的值的初始介电常数。执行包括对一个或多个基板进行退火的热处理工艺，以便从一个或多个基板上的电介质膜去除挥发性成分，并且在一个或多个基板上进行化学处理工艺，包括：引入处理化合物到一个或多个基板上的电介质膜，并加热一个或多个基板。

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