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1. 发明申请

US20010029436A1 Semiconductor electrical characteristics evaluation apparatus and semiconductor electrical characteristics evaluation method 审中-公开
标题翻译：半导体电气特性评估装置及半导体电气特性评估方法
公开(公告)号：US20010029436A1
公开(公告)日：2001-10-11
申请号：US09816085
申请日：2001-03-26
申请人： TOCHIGI NIKON CORPORATION, NIKON CORPORATION
发明人： Ryoichi Fukasawa
IPC分类号： G06F019/00 , G01R027/28 , G01R031/00 , G01R031/14
CPC分类号： G01N21/3581 , G01N21/3563 , G01R31/2831 , G01R31/311
摘要： An electrical characteristics evaluation apparatus comprises a terahertz pulse light source that irradiates terahertz pulse light onto a semiconductor material, a light detector that detects pulse light having been transmitted through or having been reflected by the semiconductor material, a measurement device that obtains a spectral transmittance or a spectral reflectance by using a time-series waveform of the electric field intensity of the transmitted pulse light or the reflected pulse light and an arithmetic operation unit that calculates an electrical characteristics parameter of the semiconductor material based upon the spectral transmittance or the spectral reflectance. By adopting this electrical characteristics evaluation apparatus and the corresponding electrical characteristics evaluation method, the electrical material quantities (such as the carrier density, the mobility, the resistivity and the electrical conductivity) of the measurement target, i.e.,the semiconductor material, can be measured and inspected without contaminating or damaging the semiconductor material.
摘要翻译：电特性评估装置包括将太赫兹脉冲光照射到半导体材料上的太赫兹脉冲光源，检测已被透过或被半导体材料反射的脉冲光的光检测器，获得光谱透射率的测量装置或通过使用发射脉冲光或反射脉冲光的电场强度的时间序列波形的光谱反射率和基于光谱透射率或光谱反射率计算半导体材料的电特性参数的算术运算单元。通过采用该电特性评价装置和相应的电特性评价方法，可以测量测量对象（即，半导体材料）的电气材料量（诸如载流子密度，迁移率，电阻率和电导率）并且在不污染或损坏半导体材料的情况下检查。

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