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1. 发明申请

WO2006009461A8 AN ORGANIC FERROELECTRIC OR ELECTRET MEMORY CIRCUIT AND A METHOD FOR MAKING SAME 审中-公开
标题翻译：一种有机铁电或电磁存储器电路及其制造方法
公开(公告)号：WO2006009461A8
公开(公告)日：2006-04-20
申请号：PCT/NO2005000267
申请日：2005-07-18
申请人： THIN FILM ELECTRONICS ASA , LILJEDAHL RICKARD , SANDBERG MATS , GUSTAFSSON GOERAN , GUDESEN HANS GUDE
发明人： LILJEDAHL RICKARD , SANDBERG MATS , GUSTAFSSON GOERAN , GUDESEN HANS GUDE
IPC分类号： G11C20060101 , G11C11/22 , H01L49/02
CPC分类号： G11C11/22 , B82Y10/00
摘要： In an organic electronic circuit (C), particularly a memory circuit with an organic ferroelectric or electret material (2) the active material comprises fluorine atoms and consists of various organic materials. The active material is located between a first electrode and a second electrode. A cell with a capacitor-like structure is defined in the active material and can be accessed for an addressing operation via a first and a second electrode. At least one of these electrodes (1 a, 1 b) comprises a layer of chemically modified gold. In a passive matrix-addressable electronic device, particularly a ferroelectric or electret memory device, circuits (C) of this kind with the active material as a ferroelectric or electret memory material form the elements of a matrix-addressable array and define the memory cells provided between first and second set of addressing electrodes. At least the electrodes of at least one of the sets then comprise at least a layer of gold. A method in the fabrication of the organic electronic circuit (C) the method comprises steps for depositing a layer of gold as at least one layer of at least one electrode and treating an exposed surface of this layer chemically, whereafter the layer of active material can be deposited on the top of the processed surface of this electrode.
摘要翻译：在有机电子电路（C）中，特别是具有有机铁电或驻极体材料（2）的存储电路中，活性材料包含氟原子并且由各种有机材料组成。活性材料位于第一电极和第二电极之间。具有电容器状结构的电池被定义在活性材料中，并且可以通过第一和第二电极访问寻址操作。这些电极（1a，1b）中的至少一个包括化学修饰的金层。在无源矩阵可寻址电子器件，特别是铁电或驻极体存储器器件中，这种具有作为铁电或驻极体存储材料的活性材料的电路（C）形成矩阵可寻址阵列的元件并且限定所提供的存储器单元在第一和第二组寻址电极之间。然后至少一个组的至少电极包括至少一层金。一种制造有机电子电路（C）的方法，该方法包括以下步骤：沉积金层作为至少一个电极的至少一个层，并化学处理该层的暴露表面，随后该活性材料层可以沉积在该电极的处理过的表面的顶部。

2. 发明申请

WO2006009463A8 ELECTRICAL VIA CONNECTION AND ASSOCIATED CONTACT MEANS AS WELL AS A METHOD FOR THEIR MANUFACTURE 审中-公开
标题翻译：电气通过连接和相关的接触方式作为其制造方法
公开(公告)号：WO2006009463A8
公开(公告)日：2006-04-20
申请号：PCT/NO2005000269
申请日：2005-07-18
申请人： THIN FILM ELECTRONICS ASA , LILJEDAHL RICKARD , GUSTAFSSON GOERAN
发明人： LILJEDAHL RICKARD , GUSTAFSSON GOERAN
IPC分类号： G11C20060101 , H01L51/00 , H01L23/538 , G11C11/22 , H01L21/28 , H01L51/20
CPC分类号： H01L51/0021
摘要： An electrical via connection and associated contact means in an organic electronic circuit, particularly a memory circuit is provided interfacing a layer of active organic dielectric material comprising various organic compounds. The via connection is provided in a via opening extending through the active dielectic material and connected with first and second electrical contact means on either side thereof. The second contact means comprises a first layer of chemically inert and non-reactive conducting material deposited directly on active dielectric layer, and a conducting material provided as a second layer over the first layer and in via opening down to the first contact means, creating a via connection through the active dielectric layer and connecting the first and the second contact means. In a method for manufacturing an electric via connection and associated contact means of this kind, a first layer in a second contact means is deposited on the active dielectric layer. The first layer consists of a chemically inert and non-reactive conducting material. A via opening is formed through the active dielectric layer of the second contact means consisting of a conducting material is deposited over the first layer and in the via opening to establish the desired via connection therethrough.
摘要翻译：提供有机电子电路中的电通孔连接和相关接触装置，特别是存储电路，其连接包含各种有机化合物的活性有机介电材料层。通孔连接设置在延伸穿过有源介电材料的通孔中，并与其两侧的第一和第二电接触装置连接。第二接触装置包括直接沉积在有源电介质层上的化学惰性和非反应性导电材料的第一层，以及在第一层上提供的第二层和通向第一接触装置的通孔的导电材料，通过有源电介质层的连接并连接第一和第二接触装置。在用于制造电通孔连接和这种相关联的接触装置的方法中，第二接触装置中的第一层沉积在有源电介质层上。第一层由化学惰性和非反应性导电材料组成。通过第二接触装置的有源电介质层形成通孔，该电介质层由导电材料构成，沉积在第一层上并在通孔开口中以建立所需的通孔连接。

3. 发明专利

AT479189T 未知
公开(公告)号：AT479189T
公开(公告)日：2010-09-15
申请号：AT05761995
申请日：2005-07-18
申请人： THIN FILM ELECTRONICS ASA
发明人： LILJEDAHL RICKARD , SANDBERG MATS , GUSTAFSSON GOERAN , GUDESEN HANS
IPC分类号： G11C11/22 , G11C20060101 , H01L23/538 , H01L49/02
摘要： In an organic electronic circuit, particularly a memory circuit with an organic ferroelectric or electret material the active material comprises fluorine atoms and consists of various organic materials. The active material is located between a first electrode and a second electrode. A cell with a capacitor-like structure is defined in the active material and can be accessed for an addressing operation via the first and the second electrode. At least one of these electrodes comprises a layer of chemically modified gold. In a passive matrix-addressable electronic device, particularly a ferroelectric or electret memory device, circuits of this kind with the active material as a ferroelectric or electret memory material form the elements of a matrix-addressable array and define the memory cells provided between first and second set of addressing electrodes. At least the electrodes of at least one of the sets then comprise at least a layer of gold. A method in the fabrication of the organic electronic circuit the method comprises steps for depositing a layer of gold as at least one layer of at least one electrode and treating an exposed surface on this layer chemically, whereafter the layer of active material can be deposited on the top of the processed surface of this electrode.

4. 发明专利

NO20043163L 未知
公开(公告)号：NO20043163L
公开(公告)日：2006-01-23
申请号：NO20043163
申请日：2004-07-22
申请人： THIN FILM ELECTRONICS ASA
发明人： GUSTAFSSON GORAN , GUDESEN HANS GUDE , LILJEDAHL RICKARD , SANDBERG MATS
IPC分类号： G11C5/06 , G11C20060101 , G11C11/22
摘要： In an organic electronic circuit, particularly a memory circuit with an organic ferroelectric or electret material the active material comprises fluorine atoms and consists of various organic materials. The active material is located between a first electrode and a second electrode. A cell with a capacitor-like structure is defined in the active material and can be accessed for an addressing operation via the first and the second electrode. At least one of these electrodes comprises a layer of chemically modified gold. In a passive matrix-addressable electronic device, particularly a ferroelectric or electret memory device, circuits of this kind with the active material as a ferroelectric or electret memory material form the elements of a matrix-addressable array and define the memory cells provided between first and second set of addressing electrodes. At least the electrodes of at least one of the sets then comprise at least a layer of gold. A method in the fabrication of the organic electronic circuit the method comprises steps for depositing a layer of gold as at least one layer of at least one electrode and treating an exposed surface on this layer chemically, whereafter the layer of active material can be deposited on the top of the processed surface of this electrode.

5. 发明专利

NO20053507L 未知
公开(公告)号：NO20053507L
公开(公告)日：2006-01-23
申请号：NO20053507
申请日：2005-07-18
申请人： THIN FILM ELECTRONICS ASA
发明人： GUSTAFSSON GORAN , LILJEDAHL RICKARD
IPC分类号： G11C5/06 , G11C20060101 , G11C11/22

6. 发明专利

NO20043180L 未知
公开(公告)号：NO20043180L
公开(公告)日：2006-01-23
申请号：NO20043180
申请日：2004-07-22
申请人： THIN FILM ELECTRONICS ASA
发明人： GUSTAFSSON GORAN , LILJEDAHL RICKARD
IPC分类号： H01L21/4763 , G11C20060101 , G11C5/06 , G11C11/22 , H01L51/00
摘要： An electrical via connection and associated contact means in an organic electronic circuit, particularly a memory circuit is provided interfacing a layer of active organic dielectric material comprising various organic compounds. The via connection is provided in a via opening extending through the active dielectric material and connected with first and second electrical contact means on either side thereof. The second contact means comprises a first layer of chemically inert and non-reactive conducting material deposited directly on active dielectric layer, and a conducting material provided as a second layer over the first layer and in via opening down to the first contact means, creating a via connection through the active dielectric layer and connecting the first and the second contact means.-In a method for manufacturing an electric via connection and associated contact means of this kind, a first layer in a second contact means is deposited on the active dielectric layer. The first layer consists of a chemically inert and non-reactive conducting material. A via opening is formed through the active dielectric layer down to the first contact means and a second layer of the second contact means consisting of a conducting material is deposited over the first layer and in the via opening to establish the desired via connection therethrough.

7. 发明专利

NO20043163A 未知
公开(公告)号：NO20043163A
公开(公告)日：2006-01-23
申请号：NO20043163
申请日：2004-07-22
申请人： THIN FILM ELECTRONICS ASA
发明人： GUSTAFSSON GORAN , GUDESEN HANS GUDE , LILJEDAHL RICKARD , SANDBERG MATS
IPC分类号： G11C5/06 , G11C20060101 , G11C11/22
CPC分类号： G11C11/22 , B82Y10/00

8. 发明专利

DE602005023177D1 ORGANISCHE FERROELEKTRISCHE ODER ELEKTRET-SPEICHERSCHALTUNG UND HERSTELLUNGSVERFAHREN DAFÜR 未知
公开(公告)号：DE602005023177D1
公开(公告)日：2010-10-07
申请号：DE602005023177
申请日：2005-07-18
申请人： THIN FILM ELECTRONICS ASA
发明人： LILJEDAHL RICKARD , SANDBERG MATS , GUSTAFSSON GOERAN , GUDESEN HANS GUDE
IPC分类号： G11C11/22 , G11C20060101 , H01L23/538 , H01L49/02

9. 发明专利

NO20043180A 未知
公开(公告)号：NO20043180A
公开(公告)日：2006-01-23
申请号：NO20043180
申请日：2004-07-22
申请人： THIN FILM ELECTRONICS ASA
发明人： GUSTAFSSON GORAN , LILJEDAHL RICKARD
IPC分类号： H01L21/4763 , G11C20060101 , G11C5/06 , G11C11/22 , H01L51/00
CPC分类号： H01L51/0021

10. 发明专利

NO20053507D0 未知
公开(公告)号：NO20053507D0
公开(公告)日：2005-07-18
申请号：NO20053507
申请日：2005-07-18
申请人： THIN FILM ELECTRONICS ASA
发明人： GUSTAFSSON GORAN , LILJEDAHL RICKARD
IPC分类号： G11C20060101 , G11C

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