专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008051589A2 METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN A MIXTURE OF SUPERCRITICAL AMMONIA AND NITROGEN, AND GROUP III-NITRIDE CRYSTALS GROWN THEREBY 审中-公开
标题翻译：在超临界氨和氮的混合物中生长III族氮化物晶体的方法以及由此生长的III族氮化物晶体
公开(公告)号：WO2008051589A2
公开(公告)日：2008-05-02
申请号：PCT/US2007/022607
申请日：2007-10-25
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , JAPAN SCIENCE AND TECHNOLOGY AGENCY , HASHIMOTO, Tadao
发明人： HASHIMOTO, Tadao
IPC分类号： C01B21/06 , C30B7/00 , C30B7/10
CPC分类号： C30B29/403 , C30B7/105
摘要： A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550 °C or higher. Theoretical calculations show that dissociation of NH 3 at this temperature is significant. However, the dissociation of NH 3 is avoided by adding extra N 2 pressure after filling the reaction vessel with NH 3 .
摘要翻译：在超临界氨和氮的混合物中生长III族氮化物晶体的方法以及通过该方法生长的III族晶体。 III族氮化物晶体在反应容器中在超临界氨中使用多晶III族氮化物，无定形III族氮化物，III族金属或上述物质的混合物的源材料或营养物和种晶那是一种III族氮化物单晶。为了生长高质量的III族氮化物晶体，结晶温度设定在550℃或更高。理论计算表明，NH 3在此温度下的解离是显着的。然而，在用NH 3填充反应容器后，通过加入额外的N 2压力来避免NH 3的解离。

2. 发明申请

WO2007117689A3 GROWING LARGE SURFACE AREA GALLIUM NITRIDE CRYSTALS 审中-公开
公开(公告)号：WO2007117689A3
公开(公告)日：2007-10-18
申请号：PCT/US2007/008743
申请日：2007-04-06
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , JAPAN SCIENCE AND TECHNOLOGY AGENCY , HASHIMOTO, Tadao , NAKAMURA, Shuji , SAITO, Makoto
发明人： HASHIMOTO, Tadao , NAKAMURA, Shuji , SAITO, Makoto
IPC分类号： C30B25/12 , C30B25/14
摘要： A method for growing gallium nitride (GaN) crystals in supercritical ammonia using an autoclave is disclosed. Large surface area GaN crystals are created, which may include calcium, magnesium or vanadium or less than 1% indium.

3. 发明申请

WO2007149487A2 OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING N-FACE OR M-PLANE GAN SUBSTRATE PREPARED WITH AMMONOTHERMAL GROWTH 审中-公开
标题翻译：光电子和电子设备使用N面或M-平面甘油底物制备的热成型
公开(公告)号：WO2007149487A2
公开(公告)日：2007-12-27
申请号：PCT/US2007/014383
申请日：2007-06-20
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , JAPAN SCIENCE AND TECHNOLOGY AGENCY , HASHIMOTO, Tadao , SATO, Hitoshi , NAKAMURA, Shuji
发明人： HASHIMOTO, Tadao , SATO, Hitoshi , NAKAMURA, Shuji
IPC分类号： C30B23/06 , H01L29/04 , H01L33/00
CPC分类号： H01L29/045 , C30B7/10 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L33/16 , Y10S438/973 , Y10T117/1064
摘要： A method for growing D3-V nitride films having an N-face or M-plane using an ammonotheπnal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane 3Gallium Nitride films and bulk GaN.
摘要翻译：使用氨基生长技术生长具有N面或M面的D3-V氮化物膜的方法。该方法包括使用高压釜，加热高压釜，并将氨引入高压釜中以产生平滑的N面或M面氮化镓镓膜和体GaN。

4. 发明申请

WO2007008198A1 METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA USING AN AUTOCLAVE 审中-公开
标题翻译：使用自动化在超临界氨基酸中生长III族氮化物晶体的方法
公开(公告)号：WO2007008198A1
公开(公告)日：2007-01-18
申请号：PCT/US2005/024239
申请日：2005-07-08
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , JAPAN SCIENCE AND TECHNOLOGY AGENCY , FUJITO, Kenji , HASHIMOTO, Tadao , NAKAMURA, Shuji
发明人： FUJITO, Kenji , HASHIMOTO, Tadao , NAKAMURA, Shuji
IPC分类号： C30B7/10
CPC分类号： C30B7/105 , C30B7/10 , C30B29/403 , C30B29/406 , Y10T117/1096
摘要： A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600 ° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.
摘要翻译：生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更小的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种，是III族氮化物单晶。 III族氮化物多晶体可以在退火之后的先前的氨热处理中再循环，还原气体在600℃以上。高压釜可以包括填充有氨的内部室，其中当氨在高压釜加热后达到超临界状态时，氨从内部室释放到高压釜中，使得超临界氨的对流转移源材料和将转移的源材料沉积到晶种上，防止源材料的未溶解颗粒转移并沉积在晶种上。

5. 发明公开

EP2004882A2 GROWING LARGE SURFACE AREA GALLIUM NITRIDE CRYSTALS 审中-公开
标题翻译：方法氮化镓晶体具有大表面具有大表面超临界氨和氮化镓晶体育种
公开(公告)号：EP2004882A2
公开(公告)日：2008-12-24
申请号：EP07755121.6
申请日：2007-04-06
申请人： The Regents of the University of California , Japan Science and Technology Agency
发明人： HASHIMOTO, Tadao , NAKAMURA, Shuji , SAITO, Makoto
IPC分类号： C30B25/12 , C30B25/14
CPC分类号： C30B29/406 , C30B7/10 , C30B9/00
摘要： A method for growing gallium nitride (GaN) crystals in supercritical ammonia using an autoclave is disclosed. Large surface area GaN crystals are created, which may include calcium, magnesium or vanadium or less than 1% indium.

6. 发明公开

EP2092093A2 METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN A MIXTURE OF SUPERCRITICAL AMMONIA AND NITROGEN, AND GROUP III-NITRIDE CRYSTALS GROWN THEREBY 审中-公开
标题翻译：的程序对超临界氨氮和氮，从而混合物拖带III族氮化物晶体冷拔III族氮化物晶体
公开(公告)号：EP2092093A2
公开(公告)日：2009-08-26
申请号：EP07852946.8
申请日：2007-10-25
申请人： The Regents of the University of California , Japan Science and Technology Agency
发明人： HASHIMOTO, Tadao
IPC分类号： C30B7/00 , C30B21/02
CPC分类号： C30B29/403 , C30B7/105
摘要： A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550 °C or higher. Theoretical calculations show that dissociation of NH3 at this temperature is significant. However, the dissociation of NH3 is avoided by adding extra N2 pressure after filling the reaction vessel with NH3.

7. 发明公开

EP2041794A2 OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING N-FACE OR M-PLANE GAN SUBSTRATE PREPARED WITH AMMONOTHERMAL GROWTH 审中-公开
标题翻译： OPTOELECTRONIC和电子元件用正面或m面GaN衬底中OTHER安蒙·佩恩特育种
公开(公告)号：EP2041794A2
公开(公告)日：2009-04-01
申请号：EP07809717.7
申请日：2007-06-20
申请人： The Regents of the University of California , Japan Science and Technology Agency
发明人： HASHIMOTO, Tadao , SATO, Hitoshi , NAKAMURA, Shuji
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , C30B7/10 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L33/16 , Y10S438/973 , Y10T117/1064
摘要： A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane 3Gallium Nitride films and bulk GaN.

8. 发明公开

EP1917382A1 METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA USING AN AUTOCLAVE 审中-公开
标题翻译：的程序对超临界氨拖带III族氮化物晶体用高压釜
公开(公告)号：EP1917382A1
公开(公告)日：2008-05-07
申请号：EP05769394.7
申请日：2005-07-08
申请人： The Regents of the University of California , Japan Science and Technology Agency
发明人： NAKAMURA, Shuji , HASHIMOTO, Tadao , FUJITO, Kenji
IPC分类号： C30B7/10
CPC分类号： C30B7/105 , C30B7/10 , C30B29/403 , C30B29/406 , Y10T117/1096
摘要： A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600°C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.
摘要翻译：生长高品质，III族氮化物，块状单晶的方法。该III族氮化物块状晶体中在超临界氨中使用高压釜的源材料生长或营养所做的是III族金属具有至少10微米或更大的晶粒尺寸和晶种III族氮化物多晶或基团做了是III族氮化物单晶。该III族氮化物多晶体可以从先前的氨热过程退火后在还原性气体在更然后600℃，将高压釜可包括内部腔室被回收并填充有氨，worin的氨从所述内部腔室释放到高压釜当氨高压釜的加热后达到一个超临界状态，求做了超临界氨转移源材料和存款的对流被转让源材料施加到晶种，但是源材料的未溶解颗粒被转移并沉积在防治晶种。

9. 发明申请

WO2009039398A8 GALLIUM NITRIDE BULK CRYSTALS AND THEIR GROWTH METHOD 审中-公开
公开(公告)号：WO2009039398A8
公开(公告)日：2009-03-26
申请号：PCT/US2008/077056
申请日：2008-09-19
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , HASHIMOTO, Tadao , NAKAMURA, Shuji
发明人： HASHIMOTO, Tadao , NAKAMURA, Shuji
IPC分类号： C30B23/02
摘要： A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm 2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, and using an autoclave having a high-pressure vessel with an upper region and a lower region. The temperature of the lower region of the high-pressure vessel is at or above 550°C, the temperature of the upper region of the high-pressure vessel is set at or above 500°C, and the temperature difference between the lower and upper regions is maintained at or above 30°C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.

10. 发明申请

WO2007133512A2 METHODS AND MATERIALS FOR GROWING III-NITRIDE SEMICONDUCTOR COMPOUNDS CONTAINING ALUMINUM 审中-公开
标题翻译：用于生长含有铝的III族氮化物半导体化合物的方法和材料
公开(公告)号：WO2007133512A2
公开(公告)日：2007-11-22
申请号：PCT/US2007/011043
申请日：2007-05-08
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , KAMBER, Derrick, S. , HASKELL, Benjamin, A. , NAKAMURA, Shuji , HASHIMOTO, Tadao
发明人： KAMBER, Derrick, S. , HASKELL, Benjamin, A. , NAKAMURA, Shuji , HASHIMOTO, Tadao
IPC分类号： G01F1/84 , G01F25/00
CPC分类号： C04B35/581 , C23C16/4404 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L21/02573 , H01L21/0262
摘要： A method for growing III-nitride films containing aluminum using Hydride Vapor Phase Epitaxy (HVPE) is disclosed, and comprises using corrosion-resistant materials in an HVPE system, the region of the HVPE system containing the corrosion-resistant materials being an area that contacts an aluminum halide, heating a source zone with an aluminum-containing source above a predetermined temperature, and- growing the III-nitride film containing aluminum within the HVPE system containing the corrosion-resistant material.
摘要翻译：公开了使用氢化物气相外延（HVPE）生长含有铝的III族氮化物膜的方法，并且包括在HVPE系统中使用耐腐蚀材料，所述HVPE系统的包含耐腐蚀材料的区域是接触铝卤化物，将含铝源的源区加热到高于预定温度，以及在含有耐腐蚀材料的HVPE系统内生长含有铝的III族氮化物膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式