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    • 9. 发明申请
    • HEXAGONAL WURTZITE SINGLE CRYSTAL
    • 六角形WURTZITE单晶
    • WO2009146384A9
    • 2010-08-12
    • PCT/US2009045527
    • 2009-05-28
    • UNIV CALIFORNIASAITO MAKOTODENBAARS STEVEN PSPECK JAMES SNAKAMURA SHUJI
    • SAITO MAKOTODENBAARS STEVEN PSPECK JAMES SNAKAMURA SHUJI
    • C30B29/16C30B7/00
    • C30B7/10C30B29/403C30B29/406
    • A technique for growing high quality bulk hexagonal single crystals using a solvo-thermal method, and a technique for achieving the high quality and high growth rate at the same time. The crystal quality strongly depends on the growth planes, wherein a nonpolar or semipolar seed surface gives a higher crystal quality as compared to a c-plane seed surface. Also, the growth rate strongly depends on the growth planes, wherein a semipolar seed surface gives a higher growth rate. High crystal quality and high growth rate are achievable at the same time by choosing the suitable growth plane. High crystal quality is achievable when the nonpolar or semipolar seed surface RMS roughness is below 100 nm; on the other hand, the crystal grown from the Ga-face or N-face results in poor crystal quality, even though grown from an atomically smooth surface.
    • 使用溶剂热法生长高质量体积六边形单晶的技术,以及同时实现高质量和高生长速率的技术。 晶体质量强烈地取决于生长平面,其中与c面种子表面相比,非极性或半极性种子表面提供更高的晶体质量。 此外,生长速率强烈地取决于生长平面,其中半极性种子表面产生较高的生长速率。 通过选择合适的生长平面,可以同时实现高结晶质量和高生长速度。 当非极性或半极性种子表面RMS粗糙度低于100nm时,可以实现高晶体质量; 另一方面,从Ga面或N面生长的晶体即使从原子光滑的表面生长也会导致差的晶体质量。