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1. 发明专利

JPH07205499A AUTOMATIC GAP ADJUSTING DEVICE 失效
公开(公告)号：JPH07205499A
公开(公告)日：1995-08-08
申请号：JP1228694
申请日：1994-01-11
申请人： TAMURA ELECTRIC WORKS LTD , NTT DATA TSUSHIN KK , NEC CORP , NEC DATA TERMINAL LTD
发明人： TAKAHASHI BUNICHI , EBE KAZUHIKO , HATTORI TAKESHI , INOUE TAKASHI , KATSUMATA ISAMU , NAGAI MIKIO , AOKI KEIICHI
IPC分类号： B41J11/14 , B41J11/20
摘要： PURPOSE:To maintain a gap between a printing head and a platen constant in a printer device even if the operating condition of the device or the mounting dimension of a part changes. CONSTITUTION:At the time of product delivery, a gap between the detection position by a sensor S1 and the stopping position of a platen is adjusted, the initial adjusting value and the initial moving distance from the home position of the platen at this time to the stopping position are stored in an E PROM3 respectively, and the rising control of the platen is carried out based on the output of the sensor and the initial adjusting value when this device is installed and started. A moving distance from the home position of the platen to the stopping position is measured, the initial adjusting value is corrected from a difference between the measured value and the initial moving distance in a memory, and based on the correction value, the rising control of the platen is carried out.

2. 发明专利

JPH07211089A MEMORY WRITING CONTROL SYSTEM 失效
公开(公告)号：JPH07211089A
公开(公告)日：1995-08-11
申请号：JP1228794
申请日：1994-01-11
申请人： TAMURA ELECTRIC WORKS LTD , NTT DATA TSUSHIN KK , NEC CORP , NEC DATA TERMINAL LTD
发明人： EBE KAZUHIKO , INOUE TAKASHI , KATSUMATA ISAMU , NAGAI MIKIO , AOKI KEIICHI
IPC分类号： G06F12/16 , G11C16/02 , G11C16/06 , G11C17/00
摘要： PURPOSE:To enable writing of data into E PROM exceeding the limited number of times of writing operation. CONSTITUTION:In the case of storing the information about the counted and accumulated number of times of printing of a print head 8, the region of E PROM is divided into a plurality of areas and such information is sequentially written equally into each area for the storing purpose. In comparison with the case where data is concentratedly written into one area, the operation life of E PROM is extended up to 10 times. Therefore, the number of times of data wiriting to E PROM can be increased remarkably.

3. 发明公开

EP2003686A4 FIELD EFFECT TRANSISTOR 有权转让
标题翻译：场效应晶体管
公开(公告)号：EP2003686A4
公开(公告)日：2009-08-19
申请号：EP07736989
申请日：2007-03-29
申请人： NEC CORP
发明人： ANDO YUJI , MIYAMOTO HIRONOBU , NAKAYAMA TATSUO , OKAMOTO YASUHIRO , INOUE TAKASHI , MURASE YASUHIRO , OTA KAZUKI , WAKEJIMA AKIO , KURODA NAOTAKA
IPC分类号： H01L21/338 , H01L21/28 , H01L29/417 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/2003

4. 发明公开

EP1983563A4 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP1983563A4
公开(公告)日：2009-07-29
申请号：EP07706287
申请日：2007-01-29
申请人： NEC CORP
发明人： ANDO YUJI , MIYAMOTO HIRONOBU , OKAMOTO YASUHIRO , NAKAYAMA TATSUO , INOUE TAKASHI
IPC分类号： H01L21/338 , H01L29/06 , H01L29/778 , H01L29/80 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/201

5. 发明公开

EP1901341A4 FIELD EFFECT TRANSISTOR 审中-公开
公开(公告)号：EP1901341A4
公开(公告)日：2009-07-15
申请号：EP06766607
申请日：2006-06-12
申请人： NEC CORP
发明人： MIYAMOTO HIRONOBU , ANDO YUJI , OKAMOTO YASUHIRO , NAKAYAMA TATSUO , INOUE TAKASHI , OTA KAZUKI , WAKEJIMA AKIO , KASAHARA KENSUKE , MURASE YASUHIRO , MATSUNAGA KOHJI , YAMANOGUCHI KATSUMI , SHIMAWAKI HIDENORI
IPC分类号： H01L21/338 , H01L29/06 , H01L29/40 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/802 , H01L29/812

6. 发明公开

EP1978550A4 FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：场效应晶体管和多层外延用在场效应晶体管的制备
公开(公告)号：EP1978550A4
公开(公告)日：2009-07-22
申请号：EP06822252
申请日：2006-10-25
申请人： NEC CORP
发明人： INOUE TAKASHI , NAKAYAMA TATSUO , ANDO YUJI , MURASE YASUHIRO , OTA KAZUKI , MIYAMOTO HIRONOBU , YAMANOGUCHI KATSUMI , KURODA NAOTAKA , WAKEJIMA AKIO , OKAMOTO YASUHIRO
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7783 , H01L29/0607 , H01L29/155 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/7787
摘要： In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a ‰¥ 5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 A) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature.

7. 发明公开

EP1901342A4 FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：场效应晶体管
公开(公告)号：EP1901342A4
公开(公告)日：2009-07-22
申请号：EP06766608
申请日：2006-06-12
申请人： NEC CORP
发明人： MIYAMOTO HIRONOBU , ANDO YUJI , OKAMOTO YASUHIRO , NAKAYAMA TATSUO , INOUE TAKASHI , OTA KAZUKI , WAKEJIMA AKIO , KASAHARA KENSUKE , MURASE YASUHIRO , MATSUNAGA KOHJI , YAMANOGUCHI KATSUMI , SHIMAWAKI HIDENORI
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812
CPC分类号： H01L29/404 , H01L29/7783 , H01L29/7787 , H01L29/802 , H01L29/812

8. 发明公开

EP1962338A4 FIELD EFFECT TRANSISTOR 审中-公开
标题翻译： FELDEFFEKTTRANSISTOR
公开(公告)号：EP1962338A4
公开(公告)日：2009-07-15
申请号：EP06834508
申请日：2006-12-12
申请人： NEC CORP
发明人： MATSUNAGA KOUJI , OTA KAZUKI , OKAMOTO YASUHIRO , NAKAYAMA TATSUO , WAKEJIMA AKIO , ANDO YUJI , MIYAMOTO HIRONOBU , INOUE TAKASHI , MURASE YASUHIRO
IPC分类号： H01L21/338 , H01L21/335 , H01L29/06 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： A semiconductor device (100) is provided with an undoped GaN electron transport layer (105); an AlGaN electron supply layer (106) arranged in contact with the undoped GaN electron transport layer (105); an undoped GaN layer (107) arranged on the AlGaN electron supply layer (106); a source electrode (101) and a drain electrode (103) arranged on the undoped GaN layer (107), being separated from one another; a recessed section (111), which is arranged in a region between the source electrode (101) and the drain electrode (103) and penetrating the undoped GaN layer (107); a gate electrode (102) which is embedded in the recessed section (111) and being brought into contact with the AlGaN electron supply layer (106) at the bottom plane; and a SiN film (108) arranged on the undoped GaN layer (107) in the region between the gate electrode (102) and the drain electrode (103).
摘要翻译：半导体器件（100）设置有未掺杂的GaN电子传输层（105）; 与未掺杂的GaN电子传输层（105）接触布置的AlGaN电子供应层（106）; 布置在所述AlGaN电子供给层（106）上的未掺杂的GaN层（107）; 布置在未掺杂的GaN层（107）上的源电极（101）和漏电极（103），彼此分离; 设置在所述源电极与所述漏电极之间的区域并贯穿所述未掺杂的GaN层的凹部; 嵌入凹部（111）内并在底面与AlGaN电子供给层（106）接触的栅电极（102）以及在栅电极（102）和漏电极（103）之间的区域中布置在未掺杂的GaN层（107）上的SiN膜（108）。

9. 发明专利

DE3787677D1 未知
公开(公告)号：DE3787677D1
公开(公告)日：1993-11-11
申请号：DE3787677
申请日：1987-07-02
申请人： NEC CORP
发明人： INOUE TAKASHI , KONNO MASASHI
IPC分类号： B06B1/06 , G10K13/00 , H04R17/00
摘要： A transducer is comprised of a piezoelectric ceramic cylindrical vibrator vibrating radially, and a sheet provided on an outer peripheral surface of the cylindrical vibrator and including a fiber reinforced composite material with fibers oriented only in the direction of central axis of the cylindrical vibrator. Non-piezoelectric cylinder consisting of A l alloy or Mg alloy may be usable instead of the sheet. Another type of transducer includes a cylindrical piezo-transducer vibrating radially, a cylindrical sound radiator with the central axis coincident with the cylindrical piezo-transducer, and a bending coupler provided at a predetermined interval on end surfaces of the two cylinders and coupling the cylindrical piezo-transducer and the cylindrical sound radiator. Other type of transducer is comprised of a cylindrical piezo-transducer vibrating radially, an outside cylindrical sound radiator with its central axis coincident with the central axis of the cylindrical piezo-transducer which contains the piezo-transducer therein, and a coupler extending radially from an outer peripheral surface of the cylindrical piezo-transducer to an inner peripheral surface of the cylindrical sound radiator, thereby coupling both the two.

10. 发明专利

DE3787677T2 未知
公开(公告)号：DE3787677T2
公开(公告)日：1994-02-03
申请号：DE3787677
申请日：1987-07-02
申请人： NEC CORP
发明人： INOUE TAKASHI , KONNO MASASHI
IPC分类号： B06B1/06 , G10K13/00 , H04R17/00
摘要： A transducer is comprised of a piezoelectric ceramic cylindrical vibrator vibrating radially, and a sheet provided on an outer peripheral surface of the cylindrical vibrator and including a fiber reinforced composite material with fibers oriented only in the direction of central axis of the cylindrical vibrator. Non-piezoelectric cylinder consisting of A l alloy or Mg alloy may be usable instead of the sheet. Another type of transducer includes a cylindrical piezo-transducer vibrating radially, a cylindrical sound radiator with the central axis coincident with the cylindrical piezo-transducer, and a bending coupler provided at a predetermined interval on end surfaces of the two cylinders and coupling the cylindrical piezo-transducer and the cylindrical sound radiator. Other type of transducer is comprised of a cylindrical piezo-transducer vibrating radially, an outside cylindrical sound radiator with its central axis coincident with the central axis of the cylindrical piezo-transducer which contains the piezo-transducer therein, and a coupler extending radially from an outer peripheral surface of the cylindrical piezo-transducer to an inner peripheral surface of the cylindrical sound radiator, thereby coupling both the two.

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