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1. 发明申请

US20220294420A1 ACOUSTIC WAVE DEVICE, FILTER, AND MULTIPLEXER 有权
公开(公告)号：US20220294420A1
公开(公告)日：2022-09-15
申请号：US17687501
申请日：2022-03-04
申请人： TAIYO YUDEN CO., LTD.
发明人： Shinji TANIGUCHI
IPC分类号： H03H9/205 , H03H9/56 , H03H9/13
摘要： An acoustic wave device includes a substrate, one or more acoustic layers provided on the substrate, the one or more acoustic layers each being an air gap or an acoustic mirror, the acoustic mirror having a structure in which at least two layers having different acoustic characteristics are stacked, lower electrodes provided on the substrate, the lower electrodes sharing one acoustic layer of the one or more acoustic layers between the substrate and the lower electrodes, the lower electrodes being arranged to be separated from each other across a groove, an insulating film provided in the groove on the one acoustic layer, a piezoelectric film continuously provided on the lower electrodes and the groove, and an upper electrode continuously provided on the piezoelectric film to form resonators by sandwiching the piezoelectric film between the upper electrode and the lower electrodes.

2. 发明申请

US20180219528A1 PIEZOELECTRIC THIN FILM RESONATOR, FILTER, AND MULTIPLEXER 审中-公开
公开(公告)号：US20180219528A1
公开(公告)日：2018-08-02
申请号：US15877070
申请日：2018-01-22
申请人： TAIYO YUDEN CO., LTD.
发明人： Jiansong LIU , Tokihiro NISHIHARA , Tsuyoshi YOKOYAMA , Shinji TANIGUCHI , Taisei IRIEDA
IPC分类号： H03H9/17 , H03H9/02 , H03H9/58 , H03H9/13
CPC分类号： H03H9/175 , H03H3/02 , H03H9/02015 , H03H9/02118 , H03H9/131 , H03H9/587 , H03H9/589 , H03H2003/021
摘要： A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film that is inserted between the lower electrode and the upper electrode, is located in an outer peripheral region within a resonance region where the lower electrode and the upper electrode face each other across the piezoelectric film, is located in a region that is located outside the resonance region and surrounds the resonance region, is not located in a center region of the resonance region, and includes a first part, which is located in the resonance region and has a first film thickness, and a second part, which is located outside the resonance region and has a second film thickness, the first film thickness being less than the second film thickness.

3. 发明申请

US20180006631A1 ACOUSTIC WAVE DEVICE 审中-公开
公开(公告)号：US20180006631A1
公开(公告)日：2018-01-04
申请号：US15623307
申请日：2017-06-14
申请人： TAIYO YUDEN CO., LTD.
发明人： Masumi KIDA , Tokihiro NISHIHARA , Yoshio SATOH , Shinji TANIGUCHI , Taisei IRIEDA
IPC分类号： H03H9/54 , H01L41/047 , H01L41/08 , H03H9/02
CPC分类号： H03H9/02133 , H03H9/173 , H03H9/205 , H03H9/568
摘要： An acoustic wave device includes: a substrate; an acoustic reflection layer located in or on the substrate and including an air gap, or an acoustic mirror; a piezoelectric film located on the acoustic reflection layer; lower and upper electrodes located on the acoustic reflection layer so as to sandwich the piezoelectric film so that resonance regions are located within the acoustic reflection layer and share the acoustic reflection layer, one of the lower and upper electrodes being divided, another one of the lower and upper electrodes being not divided, the lower and upper electrodes facing each other across the piezoelectric film in each of the resonance regions; and an insertion film located between the lower and upper electrodes, located in at least a part of an outer peripheral region of each of the resonance regions, and being not located in a center region of each of the resonance regions.

4. 发明申请

US20170271741A1 ACOUSTIC WAVE FILTER AND DUPLEXER 审中-公开
公开(公告)号：US20170271741A1
公开(公告)日：2017-09-21
申请号：US15611669
申请日：2017-06-01
申请人： TAIYO YUDEN CO., LTD.
发明人： Tokihiro NISHIHARA , Shinji TANIGUCHI
IPC分类号： H01P5/16 , H01P1/203 , H01P7/08 , H03H3/04 , H03H9/02 , H03H9/58 , H03H9/60 , H03H9/70 , H01P5/02 , H03H3/02
CPC分类号： H03H9/02834 , H01P1/20381 , H01P1/2039 , H01P5/028 , H01P5/16 , H01P7/08 , H03H3/04 , H03H9/02102 , H03H9/587 , H03H9/605 , H03H9/706 , H03H2003/021 , H03H2003/0407
摘要： An acoustic wave filter includes series resonators and parallel resonators that have a piezoelectric film on an identical substrate and have a lower electrode and an upper electrode, wherein: one of the series resonators and the parallel resonators have a temperature compensation film on a face of the lower electrode or the upper electrode that is opposite to the piezoelectric film in a resonance region, the compensation film having an elastic constant of a temperature coefficient of which sign is opposite to a sign of a temperature coefficient of an elastic constant of the piezoelectric film; and the other have an added film on the same side as the temperature compensation film on the lower electrode side or the upper electrode side compared to the piezoelectric film in the resonance region in the one of the series resonators and the parallel resonators.

5. 发明申请

US20190115901A1 LADDER-TYPE FILTER, PIEZOELECTRIC THIN FILM RESONATOR, AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20190115901A1
公开(公告)日：2019-04-18
申请号：US16132820
申请日：2018-09-17
申请人： TAIYO YUDEN CO., LTD.
发明人： Yuki TAKAHASHI , Hiroomi KANEKO , Hiroshi KAWAKAMI , Shinji TANIGUCHI
IPC分类号： H03H9/58 , H03H9/60 , H03H9/70 , H03H9/17 , H03H9/205 , H03H9/02
摘要： A ladder-type filter includes: a first piezoelectric thin film resonator including a first lower electrode, a first piezoelectric film, a first upper electrode, and an insertion film inserted between the first lower and upper electrodes, the insertion film being located in an outer peripheral region of a first resonance region; a second piezoelectric thin film resonator including a second lower electrode, a second piezoelectric film, and a second upper electrode, the second piezoelectric thin film resonator having no insertion film between the second lower and upper electrodes in a second resonance region; a series resonator, at least one of the series resonator being a first resonator that is one of the first and second piezoelectric thin film resonators, and a parallel resonator, at least one of the parallel resonator being a second resonator that is another of the first and second piezoelectric thin film resonators.

6. 发明申请

US20150130561A1 PIEZOELECTRIC THIN FILM RESONATOR, FILTER AND DUPLEXER 有权
标题翻译：压电薄膜共振器，滤波器和双工器
公开(公告)号：US20150130561A1
公开(公告)日：2015-05-14
申请号：US14527335
申请日：2014-10-29
申请人： TAIYO YUDEN CO., LTD.
发明人： Shinji TANIGUCHI , Tokihiro NISHIHARA , Tsuyoshi YOKOYAMA , Takeshi SAKASHITA
IPC分类号： H03H9/70 , H03H9/17 , H03H9/54
CPC分类号： H03H9/173 , H03H9/02118 , H03H9/175 , H03H9/564 , H03H9/568 , H03H9/706
摘要： A piezoelectric thin film resonator includes: a substrate; a piezoelectric film provided on the substrate; a lower electrode and an upper electrode that sandwich at least a part of the piezoelectric film and face with each other; and an inserted film that is inserted in the piezoelectric film, is provided on an outer circumference region in a resonance region in which the lower electrode and the upper electrode sandwich the piezoelectric film and face with each other, is not provided in a center region of the resonance region, and has a cutout in the resonance region.
摘要翻译：压电薄膜谐振器包括：基板; 设置在基板上的压电膜; 夹着所述压电膜的至少一部分并且彼此面对的下电极和上电极; 并且插入在压电膜中的插入膜设置在下电极和上电极夹着压电膜并相互面对的谐振区域的外周区域上，不设置在中心区域共振区域，并且在共振区域中具有切口。

7. 发明申请

US20200212865A1 ACOUSTIC WAVE DEVICE, FILTER, AND MULTIPLEXER 审中-公开
公开(公告)号：US20200212865A1
公开(公告)日：2020-07-02
申请号：US16709546
申请日：2019-12-10
申请人： TAIYO YUDEN CO., LTD.
发明人： Taisei IRIEDA , Tatsuya AOKI , Mitsuhiro HABUTA , Satoshi ORITO , Shinji TANIGUCHI
IPC分类号： H03H3/02 , H03H9/02 , H03H9/17
摘要： An acoustic wave device includes: a substrate; a lower electrode, an air gap being interposed between the lower electrode and the substrate; a piezoelectric film located on the lower electrode; and an upper electrode located on the piezoelectric film such that a resonance region where at least a part of the piezoelectric film is interposed between the upper electrode and the lower electrode is formed and the resonance region overlaps with the air gap in plan view, wherein a surface facing the substrate across the air gap of the lower electrode in a center region of the resonance region is positioned lower than a surface closer to the piezoelectric film of the substrate in an outside of the air gap in plan view.

8. 发明申请

US20170170807A1 PIEZOELECTRIC THIN FILM RESONATOR AND FILTER 审中-公开
公开(公告)号：US20170170807A1
公开(公告)日：2017-06-15
申请号：US15357644
申请日：2016-11-21
申请人： TAIYO YUDEN CO., LTD.
发明人： Tsuyoshi YOKOYAMA , Takeshi SAKASHITA , Shinji TANIGUCHI , Tokihiro NISHIHARA
IPC分类号： H03H9/17 , H03H9/54
CPC分类号： H03H9/171 , H03H9/02118 , H03H9/173 , H03H9/175 , H03H9/54 , H03H9/587 , H03H9/605
摘要： A piezoelectric thin film resonator includes: a substrate; a lower electrode and an upper electrode located on the substrate; a piezoelectric film, at least a part of the piezoelectric film being sandwiched between the upper electrode and the lower electrode, the piezoelectric film including a discontinuous portion in which the piezoelectric film discontinues in at least a part of a region surrounding a center region that includes a center of a resonance region where the upper electrode and the lower electrode face each other across the at least a part of the piezoelectric film.

9. 发明申请

US20170019085A1 ACOUSTIC WAVE FILTER, DUPLEXER, AND MODULE 审中-公开
标题翻译：声波滤波器，双工器和模块
公开(公告)号：US20170019085A1
公开(公告)日：2017-01-19
申请号：US15203525
申请日：2016-07-06
申请人： TAIYO YUDEN CO., LTD.
发明人： Masumi KIDA , Tokihiro NISHIHARA , Yoshio SATO , Shinji TANIGUCHI , Taisei IRIEDA
IPC分类号： H03H9/70 , H03H9/205 , H03H9/05 , H03H9/58
CPC分类号： H03H9/205 , H03H9/02086 , H03H9/542 , H03H9/564 , H03H9/568 , H03H9/706
摘要： An acoustic wave filter includes: series resonators connected in series; and one or more parallel resonators connected in parallel, wherein at least two series resonators and a parallel resonator therebetween are divided into a first divided resonator, which includes a piezoelectric substance sandwiched between a pair of electrodes in a c-axis orientation direction, and a second divided resonator, which includes another piezoelectric substance sandwiched between another pair of electrodes so that the another pair of electrodes in the c-axis orientation direction has an electric potential opposite to that of the electrodes of the first divided resonator in the c-axis orientation direction, a first group including the first divided resonators and a second group including the second divided resonators are interconnected in parallel between two nodes, and the first divided resonators and the second divided resonators of the at least two series resonators are not electrically interconnected at the two nodes.
摘要翻译：声波滤波器包括：串联连接的串联谐振器; 以及并联连接的一个或多个并联谐振器，其中至少两个串联谐振器和它们之间的并联谐振器被分成第一分频谐振器，该第一分频谐振器包括夹在一对电极之间的压电物质，其位于c轴取向方向，第二分频谐振器，其包括夹在另一对电极之间的另一压电体，使得在c轴取向方向上的另一对电极具有与c轴取向中的第一分割谐振器的电极相反的电位包括第一分割谐振器的第一组和包括第二分频谐振器的第二组在两个节点之间并联互连，并且至少两个串联谐振器的第一分频谐振器和第二分频谐振器在电连接两个节点。

10. 发明申请

US20140361664A1 ACOUSTIC WAVE DEVICE 有权
标题翻译：声波设备
公开(公告)号：US20140361664A1
公开(公告)日：2014-12-11
申请号：US14275597
申请日：2014-05-12
申请人： TAIYO YUDEN CO., LTD.
发明人： Shinji TANIGUCHI , Tokihiro NISHIHARA
IPC分类号： H03H9/02
CPC分类号： H03H9/02102 , H03H9/173 , H03H9/175
摘要： An acoustic wave device includes: a piezoelectric film located on a substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film; a temperature compensation film located on a surface, which is opposite to the piezoelectric film, of at least one of the lower electrode and the upper electrode and having a temperature coefficient of elastic constant opposite in sign to a temperature coefficient of elastic constant of the piezoelectric film; and an additional film located on a surface of the temperature compensation film opposite to the piezoelectric film and having an acoustic impedance greater than an acoustic impedance of the temperature compensation film.
摘要翻译：声波装置包括：位于基板上的压电膜; 下电极和上电极跨过压电膜; 位于与压电薄膜相反的表面上的温度补偿薄膜，所述温度补偿薄膜位于下电极和上电极中的至少一个的表面上，并且具有与压电体的弹性常数的温度系数相反的弹性常数的温度系数电影; 以及位于温度补偿膜的与压电膜相对的表面上并且具有大于温度补偿膜的声阻抗的声阻抗的附加膜。

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