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1. 发明授权

US09297063B2 Plasma potential modulated ion implantation system 有权
标题翻译：等离子体电位调制离子注入系统
公开(公告)号：US09297063B2
公开(公告)日：2016-03-29
申请号：US13457451
申请日：2012-04-26
申请人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
IPC分类号： H01J37/317 , H01J37/16 , C23C14/48 , C23C16/04 , H01J37/32
CPC分类号： C23C14/48 , C23C16/042 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0817 , H01J2237/083
摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.
摘要翻译：一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。掩模狭缝与等离子体室电隔离。将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。

2. 发明申请

US20130287964A1 Plasma Potential Modulated ION Implantation System 有权
标题翻译：等离子体电位调制离子注入系统
公开(公告)号：US20130287964A1
公开(公告)日：2013-10-31
申请号：US13457451
申请日：2012-04-26
申请人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
IPC分类号： C23C14/04 , C23C14/48
CPC分类号： C23C14/48 , C23C16/042 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0817 , H01J2237/083
摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.
摘要翻译：一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。掩模狭缝与等离子体室电隔离。将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。

3. 发明授权

US08756021B2 Method and system for in-situ monitoring of cathode erosion and predicting cathode lifetime 有权
标题翻译：阴极侵蚀现场监测方法及系统，预测阴极寿命
公开(公告)号：US08756021B2
公开(公告)日：2014-06-17
申请号：US12912312
申请日：2010-10-26
申请人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
发明人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
IPC分类号： G01B3/44
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/242 , H01J2237/304
摘要： A method of controlling operation of an indirectly-heated cathode (IHC) ion source includes a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method includes receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
摘要翻译：控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率。确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。另一种方法包括：在第一配置中接收用于阴极操作的最小源偏置功率值，测量第一配置中阴极的源极偏置功率的降低率，以及基于最小源计算阴极的寿命偏置功率和源偏置功率的降低率。

4. 发明申请

US20130001440A1 SYSTEM AND METHOD FOR ION IMPLANTATION WITH DUAL PURPOSE MASK 失效
标题翻译：用于双用途掩模离子植入的系统和方法
公开(公告)号：US20130001440A1
公开(公告)日：2013-01-03
申请号：US13175494
申请日：2011-07-01
申请人： Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Bon-Woong Koo , Richard M. White , Kevin M. Daniels
IPC分类号： G21K5/08
CPC分类号： H01J37/32412
摘要： A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode.
摘要翻译：一种用于植入衬底的系统。该系统包括设置在系统的处理室内并耦合到地面的衬底保持器。该系统还包括设置在处理室内并耦合到电源的电极，电源被配置为向电极提供电压作为不平衡电压脉冲串，其中在不平衡电压的负电压脉冲周期期间的负峰值电压在不平衡脉冲串的正电压脉冲期间，脉冲串高于正峰值电压。该系统还包括可移动掩模，其中可移动掩模构造成在靠近基板保持器的第一位置与靠近驱动电极的第二位置之间移动。

5. 发明申请

US20120101742A1 METHOD AND SYSTEM FOR IN-SITU MONITORING OF CATHODE ERSOSION AND PREDICTING CATHODE LIFETIME 有权
标题翻译：阴离子渗透和预测阴茎生物的现场监测方法与系统
公开(公告)号：US20120101742A1
公开(公告)日：2012-04-26
申请号：US12912312
申请日：2010-10-26
申请人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
发明人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
IPC分类号： G06F19/00
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/242 , H01J2237/304
摘要： A method of controlling operation of an indirectly-heated cathode (IHC) ion source comprises a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method comprises receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
摘要翻译：控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率。确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。另一种方法包括：在第一配置中接收用于阴极操作的最小源极偏置功率值，测量第一配置中阴极的源偏置功率的降低率，以及基于最小源计算阴极的寿命偏置功率和源偏置功率的降低率。

6. 发明授权

US08461558B2 System and method for ion implantation with dual purpose mask 失效
标题翻译：双用途掩膜离子注入系统和方法
公开(公告)号：US08461558B2
公开(公告)日：2013-06-11
申请号：US13175494
申请日：2011-07-01
申请人： Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Bon-Woong Koo , Richard M. White , Kevin M. Daniels
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01J37/32412
摘要： A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode.
摘要翻译：一种用于植入衬底的系统。该系统包括设置在系统的处理室内并耦合到地面的衬底保持器。该系统还包括设置在处理室内并耦合到电源的电极，电源被配置为向电极提供电压作为不平衡电压脉冲串，其中在不平衡电压的负电压脉冲周期期间的负峰值电压在不平衡脉冲串的正电压脉冲期间，脉冲串高于正峰值电压。该系统还包括可移动掩模，其中可移动掩模构造成在靠近基板保持器的第一位置与靠近驱动电极的第二位置之间移动。

7. 发明申请

US20110092059A1 TECHNIQUES FOR PROCESSING A SUBSTRATE 有权
标题翻译：加工基材的技术
公开(公告)号：US20110092059A1
公开(公告)日：2011-04-21
申请号：US12756036
申请日：2010-04-07
申请人： Kevin M. Daniels , Russell J. Low , Nicholas P.T. Bateman , Benjamin B. Riordon
发明人： Kevin M. Daniels , Russell J. Low , Nicholas P.T. Bateman , Benjamin B. Riordon
IPC分类号： H01L21/266 , B05C11/00 , B05B5/025
CPC分类号： C23C14/042 , C23C14/48 , H01J37/3171 , H01J2237/08 , H01J2237/303 , H01J2237/31711 , H01L21/266
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
摘要翻译：本文中公开了一种用于处理衬底的改进技术。在一个特定的示例性实施例中，可以使用用于处理衬底的掩模来实现该技术。掩模可以并入基板处理系统中，例如离子注入系统。掩模可以包括设置在第一排中的一个或多个第一孔; 以及设置在第二排中的一个或多个第二孔，每排沿着所述掩模的宽度方向延伸，其中所述一个或多个第一孔和所述一个或多个第二孔是不均匀的。

8. 发明授权

US07816239B2 Technique for manufacturing a solar cell 有权
标题翻译：太阳能电池制造技术
公开(公告)号：US07816239B2
公开(公告)日：2010-10-19
申请号：US12581491
申请日：2009-10-19
申请人： Julian G. Blake , Kevin M. Daniels
发明人： Julian G. Blake , Kevin M. Daniels
IPC分类号： H01L21/04
CPC分类号： H01L21/266 , H01J37/3171 , H01J2237/31711 , H01L31/18
摘要： Techniques for manufacturing solar cells are disclosed. In one particular exemplary embodiment, the technique may comprise disposing a mask upstream of the solar cell, the mask comprising a plurality of filaments spaced apart from one another to define at least one aperture; directing a ribbon ion beam of desired species toward the solar cell to ion implant a portion of the solar cell defined by the at least one aperture of the mask; and orienting the ribbon ion beam such that longer cross-section dimension of the ribbon beam is perpendicular to the aperture in one plane.
摘要翻译：公开了制造太阳能电池的技术。在一个特定的示例性实施例中，技术可以包括在太阳能电池的上游设置掩模，所述掩模包括彼此间隔开的多个细丝以限定至少一个孔; 将所需物质的带状离子束引向太阳能电池以离子注入由掩模的至少一个孔限定的太阳能电池的一部分; 并且使带状离子束定向成使得带状束的较长横截面尺寸垂直于一个平面中的孔。

9. 发明申请

US20120017938A1 PLATEN CLEANING 审中-公开
标题翻译：板清洁
公开(公告)号：US20120017938A1
公开(公告)日：2012-01-26
申请号：US13187078
申请日：2011-07-20
申请人： William T. Weaver , Kevin M. Daniels , Dale K. Stone , Russell J. Low , Benjamin B. Riordon , Jeffrey Blahnik
发明人： William T. Weaver , Kevin M. Daniels , Dale K. Stone , Russell J. Low , Benjamin B. Riordon , Jeffrey Blahnik
IPC分类号： B08B1/00
CPC分类号： H01L21/67028 , B08B1/008 , H01J2237/31711 , H01L21/67046
摘要： To achieve cost efficiency, solar cells must be processed at a high throughput. Breakages, which may leave debris on the clamping surface of the platen, adversely affect this throughput. A plurality of embodiments are disclosed which may be used to remove debris from the clamping surface without breaking the vacuum condition within the processing station. In some embodiments, a brush is used to sweep the debris from the surface of the platen. In other embodiments, an adhesive material is used to collect the debris. In some embodiments, the automation equipment used to handle masks may also be used to handle the platen cleaning mechanisms. In still other embodiments, stream of gas or ion beams are used to clean debris from the clamping surface of the platen.
摘要翻译：为了实现成本效益，必须以高产量处理太阳能电池。碎片可能会使碎片在压板的夹紧表面上产生不利影响。公开了多个实施例，其可以用于从夹紧表面去除碎屑而不破坏处理站内的真空状况。在一些实施例中，刷子用于从压板的表面扫掠碎屑。在其他实施例中，使用粘合剂材料来收集碎屑。在一些实施例中，用于处理掩模的自动化设备也可用于处理压板清洁机构。在其它实施例中，气流或离子束用于从压板的夹紧表面清洁碎屑。

10. 发明申请

US20110027463A1 WORKPIECE HANDLING SYSTEM 审中-公开
标题翻译：工作处理系统
公开(公告)号：US20110027463A1
公开(公告)日：2011-02-03
申请号：US12814748
申请日：2010-06-14
申请人： Benjamin B. Riordon , Kevin M. Daniels , William T. Weaver , Charles T. Carlson
发明人： Benjamin B. Riordon , Kevin M. Daniels , William T. Weaver , Charles T. Carlson
IPC分类号： B05D5/00 , B05C13/00 , B05D1/32
CPC分类号： H01L21/67213 , C23C14/48 , H01J37/20 , H01J37/3171 , H01J2237/2001 , H01J2237/2007 , H01J2237/20292 , H01J2237/204 , H01J2237/31711 , H01L21/266 , H01L21/67769 , H01L31/022425 , H01L31/022441 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A workpiece handling system includes a process chamber configured to support a workpiece for ion implantation, a first mask stored outside the process chamber in a mask station, and a robot system configured to retrieve the first mask from the mask station, and position the first mask upstream of the workpiece so the workpiece receives a first selective implant through the first mask. A method includes storing a first mask outside a process chamber in a mask station, retrieving the first mask from the mask station, positioning the first mask upstream of a workpiece positioned in the process chamber for ion implantation, and performing a first selective implant through the first mask.
摘要翻译：工件处理系统包括被配置为支撑用于离子注入的工件的处理室，存储在掩模工位中的处理室外部的第一掩模以及被配置为从掩模工位取回第一掩模的机器人系统，并且将第一掩模在工件的上游，使得工件通过第一掩模接收第一选择性植入物。一种方法包括将处理室外的第一掩模存储在掩模站中，从掩模站取回第一掩模，将第一掩模定位在位于处理室中的用于离子注入的工件的上游，以及通过第第一个面具

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