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1. 发明申请

US20120101742A1 METHOD AND SYSTEM FOR IN-SITU MONITORING OF CATHODE ERSOSION AND PREDICTING CATHODE LIFETIME 有权
标题翻译：阴离子渗透和预测阴茎生物的现场监测方法与系统
公开(公告)号：US20120101742A1
公开(公告)日：2012-04-26
申请号：US12912312
申请日：2010-10-26
申请人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
发明人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
IPC分类号： G06F19/00
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/242 , H01J2237/304
摘要： A method of controlling operation of an indirectly-heated cathode (IHC) ion source comprises a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method comprises receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
摘要翻译：控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率。确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。另一种方法包括：在第一配置中接收用于阴极操作的最小源极偏置功率值，测量第一配置中阴极的源偏置功率的降低率，以及基于最小源计算阴极的寿命偏置功率和源偏置功率的降低率。

2. 发明授权

US08756021B2 Method and system for in-situ monitoring of cathode erosion and predicting cathode lifetime 有权
标题翻译：阴极侵蚀现场监测方法及系统，预测阴极寿命
公开(公告)号：US08756021B2
公开(公告)日：2014-06-17
申请号：US12912312
申请日：2010-10-26
申请人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
发明人： Russell J. Low , Kevin M. Daniels , Bon-Woong Koo , Richard M. White , James W. Blanchette
IPC分类号： G01B3/44
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/242 , H01J2237/304
摘要： A method of controlling operation of an indirectly-heated cathode (IHC) ion source includes a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method includes receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
摘要翻译：控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率。确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。另一种方法包括：在第一配置中接收用于阴极操作的最小源偏置功率值，测量第一配置中阴极的源极偏置功率的降低率，以及基于最小源计算阴极的寿命偏置功率和源偏置功率的降低率。

3. 发明授权

US09297063B2 Plasma potential modulated ion implantation system 有权
标题翻译：等离子体电位调制离子注入系统
公开(公告)号：US09297063B2
公开(公告)日：2016-03-29
申请号：US13457451
申请日：2012-04-26
申请人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
IPC分类号： H01J37/317 , H01J37/16 , C23C14/48 , C23C16/04 , H01J37/32
CPC分类号： C23C14/48 , C23C16/042 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0817 , H01J2237/083
摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.
摘要翻译：一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。掩模狭缝与等离子体室电隔离。将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。

4. 发明申请

US20130287964A1 Plasma Potential Modulated ION Implantation System 有权
标题翻译：等离子体电位调制离子注入系统
公开(公告)号：US20130287964A1
公开(公告)日：2013-10-31
申请号：US13457451
申请日：2012-04-26
申请人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
IPC分类号： C23C14/04 , C23C14/48
CPC分类号： C23C14/48 , C23C16/042 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0817 , H01J2237/083
摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.
摘要翻译：一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。掩模狭缝与等离子体室电隔离。将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。

5. 发明授权

US08461558B2 System and method for ion implantation with dual purpose mask 失效
标题翻译：双用途掩膜离子注入系统和方法
公开(公告)号：US08461558B2
公开(公告)日：2013-06-11
申请号：US13175494
申请日：2011-07-01
申请人： Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Bon-Woong Koo , Richard M. White , Kevin M. Daniels
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01J37/32412
摘要： A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode.
摘要翻译：一种用于植入衬底的系统。该系统包括设置在系统的处理室内并耦合到地面的衬底保持器。该系统还包括设置在处理室内并耦合到电源的电极，电源被配置为向电极提供电压作为不平衡电压脉冲串，其中在不平衡电压的负电压脉冲周期期间的负峰值电压在不平衡脉冲串的正电压脉冲期间，脉冲串高于正峰值电压。该系统还包括可移动掩模，其中可移动掩模构造成在靠近基板保持器的第一位置与靠近驱动电极的第二位置之间移动。

6. 发明申请

US20130001440A1 SYSTEM AND METHOD FOR ION IMPLANTATION WITH DUAL PURPOSE MASK 失效
标题翻译：用于双用途掩模离子植入的系统和方法
公开(公告)号：US20130001440A1
公开(公告)日：2013-01-03
申请号：US13175494
申请日：2011-07-01
申请人： Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Bon-Woong Koo , Richard M. White , Kevin M. Daniels
IPC分类号： G21K5/08
CPC分类号： H01J37/32412
摘要： A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode.
摘要翻译：一种用于植入衬底的系统。该系统包括设置在系统的处理室内并耦合到地面的衬底保持器。该系统还包括设置在处理室内并耦合到电源的电极，电源被配置为向电极提供电压作为不平衡电压脉冲串，其中在不平衡电压的负电压脉冲周期期间的负峰值电压在不平衡脉冲串的正电压脉冲期间，脉冲串高于正峰值电压。该系统还包括可移动掩模，其中可移动掩模构造成在靠近基板保持器的第一位置与靠近驱动电极的第二位置之间移动。

7. 发明申请

US20140106571A1 BIASING SYSTEM FOR A PLASMA PROCESSING APPARATUS 有权
标题翻译：用于等离子体加工设备的偏心系统
公开(公告)号：US20140106571A1
公开(公告)日：2014-04-17
申请号：US13649159
申请日：2012-10-11
申请人： Bon-Woong Koo , Richard M. White
发明人： Bon-Woong Koo , Richard M. White
IPC分类号： H05H1/24 , H01L21/31 , H01L21/302 , B44C1/22 , C23C16/503
CPC分类号： H01J37/32862 , H01J37/32422 , H01J37/32706
摘要： A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate plasma in the process chamber, and a biasing system. The biasing system is configured to bias the platen to attract ions from the plasma towards the workpiece during a first processing time interval and configured to bias the platen to repel ions from the platen towards interior surfaces of the process chamber housing during a cleaning time interval. The cleaning time interval is separate from the first processing time interval and occurring after the first processing time interval.
摘要翻译：等离子体处理装置包括限定处理室的处理室壳体，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源和偏置系统。偏置系统被配置为偏压压板以在第一处理时间间隔期间从等离子体离开工件以吸引离子，并且构造成在清洁时间间隔期间偏压压板以从压板排向离开处理室壳体的内表面。清洁时间间隔与第一处理时间间隔分开，并且在第一处理时间间隔之后发生。

8. 发明授权

US08916056B2 Biasing system for a plasma processing apparatus 有权
标题翻译：一种等离子体处理装置的偏压系统
公开(公告)号：US08916056B2
公开(公告)日：2014-12-23
申请号：US13649159
申请日：2012-10-11
申请人： Bon-Woong Koo , Richard M. White
发明人： Bon-Woong Koo , Richard M. White
IPC分类号： B44C1/22 , H01L21/302 , C23C16/503
CPC分类号： H01J37/32862 , H01J37/32422 , H01J37/32706
摘要： A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate plasma in the process chamber, and a biasing system. The biasing system is configured to bias the platen to attract ions from the plasma towards the workpiece during a first processing time interval and configured to bias the platen to repel ions from the platen towards interior surfaces of the process chamber housing during a cleaning time interval. The cleaning time interval is separate from the first processing time interval and occurring after the first processing time interval.
摘要翻译：等离子体处理装置包括限定处理室的处理室壳体，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源和偏置系统。偏置系统被配置为偏压压板以在第一处理时间间隔期间从等离子体离开工件以吸引离子，并且构造成在清洁时间间隔期间偏压压板以从压板排向离开处理室壳体的内表面。清洁时间间隔与第一处理时间间隔分开，并且在第一处理时间间隔之后发生。

9. 发明申请

US20120001087A1 DECELERATION LENS 有权
标题翻译：减光镜
公开(公告)号：US20120001087A1
公开(公告)日：2012-01-05
申请号：US13167399
申请日：2011-06-23
申请人： Svetlana Radovanov , Jason Schaller , Richard M. White , Kevin R. Verrier , James Blanchette , Bon-Woong Koo , Eric d. Hermanson , Kevin Daniels
发明人： Svetlana Radovanov , Jason Schaller , Richard M. White , Kevin R. Verrier , James Blanchette , Bon-Woong Koo , Eric d. Hermanson , Kevin Daniels
IPC分类号： H01J3/14
CPC分类号： H01J37/12 , H01J37/3171 , H01J2237/0213 , H01J2237/032 , H01J2237/0475
摘要： A system and method are disclosed for controlling an ion beam. A deceleration lens is disclosed for use in an ion implanter. The lens may include a suppression electrode, first and second focus electrodes, and first and second shields. The shields may be positioned between upper and lower portions of the suppression electrode. The first and second shields are positioned between the first focus electrode and an end station of the ion implanter. Thus positioned, the first and second shields protect support surfaces of said first and second focus electrodes from deposition of back-streaming particles generated from said ion beam. In some embodiments, the first and second focus electrodes may be adjustable to enable the electrode surfaces to be adjusted with respect to a direction of the ion beam. By adjusting the angle of the focus electrodes, parallelism of the ion beam can be controlled. Other embodiments are described and claimed.
摘要翻译：公开了用于控制离子束的系统和方法。公开了用于离子注入机的减速透镜。透镜可以包括抑制电极，第一和第二聚焦电极以及第一和第二屏蔽。屏蔽件可以位于抑制电极的上部和下部之间。第一和第二屏蔽件位于离子注入机的第一聚焦电极和端电极之间。如此定位，第一和第二屏蔽件保护所述第一和第二聚焦电极的支撑表面不会沉积从所述离子束产生的回流颗粒。在一些实施例中，第一和第二聚焦电极可以是可调节的，以使电极表面相对于离子束的方向被调整。通过调整聚焦电极的角度，可以控制离子束的平行度。描述和要求保护其他实施例。

10. 发明授权

US5728089A Microfabricated structure to be used in surgery 失效
标题翻译：微型结构用于手术
公开(公告)号：US5728089A
公开(公告)日：1998-03-17
申请号：US332543
申请日：1994-10-31
申请人： Amit Lal , Richard M. White
发明人： Amit Lal , Richard M. White
IPC分类号： A61B17/00 , A61B17/32 , A61B18/14 , B06B3/00 , G01H11/08 , G10K9/122 , H04R17/00 , H04R17/08
CPC分类号： B06B3/00 , A61B17/320068 , A61B18/1402 , G01H11/08 , G10K9/122 , H04R17/00 , A61B18/14 , A61B2017/00345 , A61B2017/0088 , A61B2017/320072 , A61B2018/00107 , A61B2018/00119 , H04R17/08
摘要： A microstructure suitable for use as a surgical instrument. The microstructure includes a silicon substrate having body and horn portions. The horn portion may include a blade with a forward edge. A piezoelectric actuator may be mechanically coupled to the body portion.
摘要翻译：适用于手术器械的微结构。微结构包括具有主体和喇叭部分的硅衬底。喇叭部分可以包括具有前边缘的叶片。压电致动器可以机械地联接到主体部分。

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