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1. 发明授权

US5849417A Titanium implantation materials for the living body 失效
标题翻译：用于生物体的钛植入材料
公开(公告)号：US5849417A
公开(公告)日：1998-12-15
申请号：US526612
申请日：1995-09-11
申请人： Susumu Sawada , Tateo Ohhashi , Ichiro Sawamura , Toshiaki Shimada
发明人： Susumu Sawada , Tateo Ohhashi , Ichiro Sawamura , Toshiaki Shimada
IPC分类号： A61F2/00 , A61L27/06 , A61L31/02 , B32B9/00
CPC分类号： C22C14/00 , A61L27/06 , A61L31/022 , A61F2310/00023
摘要： Implantation materials for the living body comprising: 10 to 4000 ppm of gaseous ingredients combined, mainly composed of oxygen; up to 100 ppm of ingredients other than the gaseous ingredients such as iron; and the balance titanium. An oxide film is formed on the surface, where necessary, by anodizing or the like. Titanium fixation wires for implanting in the living body composing: up to 300 ppm oxygen, up to 50 ppm hydrogen, up to 200 ppm nitrogen, and up to 400 ppm carbon, all as gaseous ingredients; up to 100 ppm of ingredients other than the gaseous ingredients such as iron; and the balance titanium. For applications where strength is the primary consideration, the wires comprise: from more than 100 to 1000 ppm of iron; up to 250 ppm oxygen, up to 50 ppm hydrogen, up to 170 ppm nitrogen, and up to 400 ppm carbon, all as gaseous ingredients; up to 100 ppm of iron and ingredients other than the gaseous ingredients; and the balance titanium.
摘要翻译：用于生物体的植入材料包括：主要由氧组成的10〜4000ppm的气态成分组合; 高达100ppm的除气体成分（如铁）以外的成分; 和天平钛。在需要时，通过阳极氧化等在表面上形成氧化膜。用于植入生物体的钛固定线组成：高达300ppm的氧气，高达50ppm的氢气，高达200ppm的氮气和高达400ppm的碳，全部为气态成分; 高达100ppm的除气体成分（如铁）以外的成分; 和天平钛。对于以强度为主要考虑的应用，电线包括：超过100至1000ppm的铁; 高达250ppm的氧气，高达50ppm的氢气，高达170ppm的氮气和高达400ppm的碳，全部为气态成分; 高达100ppm的铁和除气体成分以外的成分; 和天平钛。

2. 发明授权

US5466355A Mosaic target 失效
标题翻译：马赛克目标
公开(公告)号：US5466355A
公开(公告)日：1995-11-14
申请号：US392458
申请日：1995-02-22
申请人： Tateo Ohhashi , Koichi Nakashima , Hideaki Fukuyo , Takakazu Seki
发明人： Tateo Ohhashi , Koichi Nakashima , Hideaki Fukuyo , Takakazu Seki
IPC分类号： C23C14/34
CPC分类号： H01J37/3429 , C23C14/3414
摘要： A mosaic target comprising a plurality of target block pieces of different kinds of materials selected from the group consisting of Ta, Mo, Ti, W, Zr, Nb and Si, and their alloys and compounds, said target block pieces being combined in a stripe pattern or in a radial pattern characterized in that said target block pieces have their abutting interfaces solid-phase bonded at a temperature no more than the melting points of the target block piece materials. A typical example is a Ta-Mo mosaic target. The solid-phase bonded mosaic target blank is machined to a target which is bonded to a backing plate. The solid-phase bonding produces a mosaic target of a unitary construction, eliminating gaps among the target block pieces without sacrificing the properties of the individual block pieces. Abnormal discharge owing to gaps or contamination of the resulting film by concurrent sputtering of the solder or the backing plate is avoided.
摘要翻译：一种马赛克靶，其包括选自Ta，Mo，Ti，W，Zr，Nb和Si的不同种类的材料的多个靶块，以及它们的合金和化合物，所述靶块被组合成条带图案或径向图案，其特征在于，所述目标块件在不超过目标块件材料的熔点的温度下具有其相邻接合部固相接合。一个典型的例子是Ta-Mo马赛克目标。将固相结合的马赛克目标坯料加工成结合到背板的靶。固相接合产生一体式结构的马赛克目标，消除目标块体之间的间隙，而不会牺牲各个块体的性质。避免了由于焊料或背板的同时溅射而导致的所得膜的间隙或污染导致的异常放电。

3. 发明授权

US6045665A Method of manufacturing member for thin-film formation apparatus and the member for the apparatus 失效
标题翻译：制造薄膜形成装置的构件的方法和装置的构件
公开(公告)号：US6045665A
公开(公告)日：2000-04-04
申请号：US85133
申请日：1998-05-26
申请人： Tateo Ohhashi , Atsushi Fukushima , Hideyuki Takahashi
发明人： Tateo Ohhashi , Atsushi Fukushima , Hideyuki Takahashi
IPC分类号： C23C14/00 , C23C14/56 , C23C16/44 , C23F4/00 , H01L21/205
CPC分类号： C23C16/4404 , C23C14/564
摘要： A technique to prevent peeling of deposits formed on the surface of the inner walls of the thin-film formation apparatus and the members inside the apparatus and to suppress particle production without contamination of the inside of the apparatus. A member for a thin-film formation apparatus having inner walls and a method for manufacturing the member is provided. A plurality of unevenness is provided on at least a portion of the surface of the member and the inner walls on which unnecessary thin films are deposited. The surfaces are subjected to masking, and then, etching processing to form the plurality of unevenness. After the etching processing the masking is removed.
摘要翻译：防止形成在薄膜形成装置的内壁的表面上的沉积物的剥离和装置内部的构件的技术，并且抑制颗粒生成而不会污染装置的内部。提供具有内壁的薄膜形成装置的构件和用于制造构件的方法。在构件的表面的至少一部分和其上沉积不需要的薄膜的内壁上设置多个不均匀性。对表面进行掩蔽，然后进行蚀刻处理以形成多个不平坦部。在蚀刻处理之后，去除掩模。

4. 发明授权

US4564392A Heat resistant martensitic stainless steel containing 12 percent chromium 失效
标题翻译：含有12％铬的耐热马氏体不锈钢
公开(公告)号：US4564392A
公开(公告)日：1986-01-14
申请号：US632174
申请日：1984-07-19
申请人： Tateo Ohhashi , Hideyuki Kawamoto , Yutaka Murakami
发明人： Tateo Ohhashi , Hideyuki Kawamoto , Yutaka Murakami
IPC分类号： C22C38/00 , C22C38/22 , C22C38/24 , C22C38/44 , C22C38/46
CPC分类号： C22C38/24 , C22C38/22
摘要： A heat resistant martensitic stainless steel having an improved creep rupture strength is described. This steel consists of, in weight percent, 0.05% to 0.12% carbon, not more than 0.5% silicon, not more than 1.5% manganese, not more than 1.5% nickel, 9.0 to 13.0% chromium, 0.5 to 2.0% molybdenum, 0.05 to 0.50% vanadium, not more than 0.15% nitrogen, and, if desired, at least one of 0.02 to 0.50% columbium, 0.02 to 0.5% tantalum, 0.5 to 2.0% tungsten, and 0.0003 to 0.0100% boron, with the balance being iron and incidental or inevitable impurities, and wherein the weight ratio of carbon to nitrogen (C/N) is not more than 3:1.
摘要翻译：描述了具有改善的蠕变断裂强度的耐热马氏体不锈钢。该钢由重量百分比为0.05％至0.12％的碳，不超过0.5％的硅，不超过1.5％的锰，不超过1.5％的镍，9.0至13.0％的铬，0.5至2.0％的钼，0.05 至0.50％的钒，不超过0.15％的氮，并且如果需要，0.02至0.50％的铌，0.02至0.5％的钽，0.5至2.0％的钨和0.0003至0.0100％的硼中的至少一种，其余为铁和偶然或不可避免的杂质，并且其中碳与氮的重量比（C / N）不大于3:1。

5. 发明授权

US06319419B1 Method of manufacturing member for thin-film formation apparatus and the member for the apparatus 有权
标题翻译：制造薄膜形成装置的构件的方法和装置的构件
公开(公告)号：US06319419B1
公开(公告)日：2001-11-20
申请号：US09439139
申请日：1999-11-12
申请人： Tateo Ohhashi , Atsushi Fukushima , Hideyuki Takahashi
发明人： Tateo Ohhashi , Atsushi Fukushima , Hideyuki Takahashi
IPC分类号： B31D300
CPC分类号： C23C16/4404 , C23C14/564
摘要： A technique to prevent peeling of deposits formed on the surface of the inner walls of the thin-film formation apparatus and the members inside the apparatus and to suppress particle production without contamination of the inside of the apparatus. A member for a thin-film formation apparatus having inner walls and a method for manufacturing the member is provided. A plurality of unevenness is provided on at least a portion of the surface of the member and the inner walls on which unnecessary thin films are deposited. The surfaces are subjected to masking, and then, etching processing to form the plurality of unevenness. After the etching processing the masking is removed.
摘要翻译：防止形成在薄膜形成装置的内壁的表面上的沉积物的剥离和装置内部的构件的技术，并且抑制颗粒生成而不会污染装置的内部。提供具有内壁的薄膜形成装置的构件和用于制造构件的方法。在构件的表面的至少一部分和其上沉积不需要的薄膜的内壁上设置多个不均匀性。对表面进行掩蔽，然后进行蚀刻处理以形成多个不平坦部。在蚀刻处理之后，去除掩模。

6. 发明授权

US06284111B1 Sputtering target free of surface-deformed layers 有权
标题翻译：溅射靶没有表面变形层
公开(公告)号：US06284111B1
公开(公告)日：2001-09-04
申请号：US09459805
申请日：1999-12-13
申请人： Hideyuki Takahashi , Tateo Ohhashi , Kazuhiro Seki
发明人： Hideyuki Takahashi , Tateo Ohhashi , Kazuhiro Seki
IPC分类号： C23C1434
CPC分类号： H01J37/3491 , C23C14/3414
摘要： A sputtering target is provided which provides early stabilization of the film-deposition rate of the sputtering target from its initial stage of use. The sputtering target surface subjected to erosion is formed with a surface-deformed layer. The surface-deformed layer is reduced by precision machining and removed by etching. The extent of etching is controlled so that the surface roughness (Ra) is in a range between 0.1% and 10% of the mean crystal grain diameter of the material constituting the target. The surface roughness (Ra) is defined as the mean roughness on the center line of the surface.
摘要翻译：提供了一种溅射靶，其提供从其初始使用阶段对溅射靶的膜沉积速率的早期稳定性。受到侵蚀的溅射靶表面形成有表面变形层。通过精密加工减少表面变形层，并通过蚀刻去除。控制蚀刻程度使得表面粗糙度（Ra）在构成靶材的材料的平均晶粒直径的0.1％至10％的范围内。表面粗糙度（Ra）定义为表面中心线上的平均粗糙度。

7. 发明授权

US5693203A Sputtering target assembly having solid-phase bonded interface 失效
标题翻译：具有固相键合界面的溅射靶组件
公开(公告)号：US5693203A
公开(公告)日：1997-12-02
申请号：US306057
申请日：1994-09-14
申请人： Tateo Ohhashi , Hideaki Fukuyo , Ichiroh Sawamura , Kenichirou Nakamura , Atsushi Fukushima , Masaru Nagasawa
发明人： Tateo Ohhashi , Hideaki Fukuyo , Ichiroh Sawamura , Kenichirou Nakamura , Atsushi Fukushima , Masaru Nagasawa
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407 , Y10T428/1275 , Y10T428/12806 , Y10T428/12812 , Y10T428/12819 , Y10T428/12826 , Y10T428/12896 , Y10T428/12903 , Y10T428/12944
摘要： A sputtering target assembly composed of a sputtering target and a backing plate with or without an insert or inserts interposed therebetween as necessary characterized by having solid-phase bonded interface accompanied with no appreciable thermal diffusion layer and by said sputtering target substantially maintaining the quality characteristics including metallurgical characteristics and properties that the sputtering target had before it was bonded to the backing plate intact. The sputtering target assembly is obtained by solid-phase bonding the target and backing plate, with or without one or more insert sandwiched therebetween, at a low temperature and a low pressure under a vacuum. The solid-phase bonded interface gives reliable bonds of a bonded area percentage of 100% without non-bonded portions such as pores. The uniformity of microstructure and crystal orientation etc. of a target material is maintained intact with the suppression of crystal grain growth.
摘要翻译：由溅射靶和背板组成的溅射靶组件，其具有或不具有插入物或插入物之间的插入物或插入物，其特征在于具有伴随无明显热扩散层的固相键合界面和所述溅射靶基本上保持质量特性，包括溅射靶材之前的冶金特性和性能完好无损地粘合到背板上。溅射靶组件是通过在低温和低压下在真空下将目标板和背板固定相结合而得到的，夹持有或不带有一个或多个插入件。固相键合界面可赋予粘合面积百分比为100％的可靠键，而无粘合部分如孔。目标材料的微观结构和晶体取向等的均匀性随着晶粒生长的抑制而保持不变。

8. 发明授权

US5415829A Sputtering target 失效
标题翻译：溅射目标
公开(公告)号：US5415829A
公开(公告)日：1995-05-16
申请号：US172504
申请日：1993-12-22
申请人： Tateo Ohhashi , Takakazu Seki , Takeo Okabe , Koichi Yasui , Hideaki Fukuyo
发明人： Tateo Ohhashi , Takakazu Seki , Takeo Okabe , Koichi Yasui , Hideaki Fukuyo
IPC分类号： B22F9/00 , B22F9/04 , C22C1/04 , C23C14/34 , B22F3/15
CPC分类号： B22F9/04 , B22F9/005 , C22C1/045 , C23C14/3414 , B22F2009/041
摘要： A method of manufacturing metal silicide targets or alloy targets for sputtering use comprises the steps of (a) mechanically alloying silicon and a metal to provide a metal silicide powder or mechanically alloying silicon and a plurality of metal powders to provide an alloy powder, (b) and then pressing the metal silicide powder or alloy powder. The invention also relates to the metal silicide targets or alloy targets so manufactured. In the mechanical alloying step, rapid and fine division and agglomeration of the mixed powder is repeated until the particles of the material powders are finely divided to a submicron level. They form aggregates tens of microns in diameter. The aggregates gradually take an equi-axed shape. Homogenization of the material powder mixture progresses to mixing on the atomic level, until alloying takes place.
摘要翻译：制造用于溅射的金属硅化物靶或合金靶的方法包括以下步骤：（a）将硅和金属机械合金化以提供金属硅化物粉末或机械合金化硅和多种金属粉末以提供合金粉末（b ），然后压入金属硅化物粉末或合金粉末。本发明还涉及如此制造的金属硅化物靶或合金靶。在机械合金化步骤中，重复混合粉末的快速精细分离和附聚，直到粉末颗粒细分为亚微米级。它们形成直径几十微米的聚集体。聚集体逐渐采取平等的形状。材料粉末混合物的均质化在原子水平上进行混合，直到发生合金化。

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