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1. 发明授权

US06720640B2 Method for reclaiming delaminated wafer and reclaimed delaminated wafer 有权
标题翻译：回收分层晶片和再生分层晶片的方法
公开(公告)号：US06720640B2
公开(公告)日：2004-04-13
申请号：US10447103
申请日：2003-05-29
申请人： Susumu Kuwabara , Kiyoshi Mitani , Naoto Tate , Masatake Nakano , Thierry Barge , Christophe Maleville
发明人： Susumu Kuwabara , Kiyoshi Mitani , Naoto Tate , Masatake Nakano , Thierry Barge , Christophe Maleville
IPC分类号： H01L2906
CPC分类号： H01L21/02032 , H01L21/76254 , H01L22/34 , Y10S438/906 , Y10S438/974 , Y10S438/977
摘要： In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.
摘要翻译：在通过离子注入和分层方法回收在接合晶片的制造中作为副产物生产的分层晶片的方法中，至少在分层晶片的倒角部分上的离子注入层被去除，然后，晶圆被抛光。具体而言，通过倒角对剥离后的晶片的至少倒角部进行蚀刻处理和/或处理，然后对晶片的表面进行研磨。或者，对剥离后的晶片进行热处理，然后进行抛光。提供了一种用于回收分层晶片的方法，其提供了即使经受了良好产率的热处理也不产生颗粒的高品质再生晶片，以及这种再生晶片。

2. 发明授权

US06596610B1 Method for reclaiming delaminated wafer and reclaimed delaminated wafer 有权
标题翻译：回收分层晶片和再生分层晶片的方法
公开(公告)号：US06596610B1
公开(公告)日：2003-07-22
申请号：US09889933
申请日：2001-07-25
申请人： Susumu Kuwabara , Kiyoshi Mitani , Naoto Tate , Masatake Nakano , Thierry Barge , Christophe Maleville
发明人： Susumu Kuwabara , Kiyoshi Mitani , Naoto Tate , Masatake Nakano , Thierry Barge , Christophe Maleville
IPC分类号： H01L2130
CPC分类号： H01L21/02032 , H01L21/76254 , H01L22/34 , Y10S438/906 , Y10S438/974 , Y10S438/977
摘要： In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.
摘要翻译：在通过离子注入和分层方法回收在接合晶片的制造中作为副产物生产的分层晶片的方法中，至少在分层晶片的倒角部分上的离子注入层被去除，然后，晶圆被抛光。具体而言，通过倒角对剥离后的晶片的至少倒角部进行蚀刻处理和/或处理，然后对晶片的表面进行研磨。或者，对剥离后的晶片进行热处理，然后进行抛光。提供了一种用于回收分层晶片的方法，其提供了即使经受了良好产率的热处理也不产生颗粒的高质量的再生晶片，以及这种再生晶片。

3. 发明授权

US06846718B1 Method for producing SOI wafer and SOI wafer 有权
标题翻译：制造SOI晶圆和SOI晶圆的方法
公开(公告)号：US06846718B1
公开(公告)日：2005-01-25
申请号：US09857803
申请日：2000-10-13
申请人： Hiroji Aga , Naoto Tate , Susumu Kuwabara , Kiyoshi Mitani
发明人： Hiroji Aga , Naoto Tate , Susumu Kuwabara , Kiyoshi Mitani
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.
摘要翻译：一种用于通过氢离子分层方法制造SOI晶片的方法，包括至少一个步骤，即接合基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片，以及将具有SOI层的晶片分层的步骤微气泡层作为边界，其中，在分层步骤之后，使用快速加热/快速冷却装置（RTA）和批料在含氢或氩的气氛中对具有SOI层的晶片进行两级热处理加工型炉。优选地，首先进行RTA装置的热处理。通过氢离子分层方法剥离的SOI层表面的表面粗糙度在短时间段到长周期的范围内得到改善，并且以高生产率有效地制造了由于SOI层中的COP而不产生凹坑的SOI晶片。

4. 发明授权

US07288418B2 Process for treating substrates for the microelectronics industry, and substrates obtained by this process 有权
标题翻译：用于处理微电子工业用基板的方法以及通过该方法获得的基板
公开(公告)号：US07288418B2
公开(公告)日：2007-10-30
申请号：US11348502
申请日：2006-02-07
申请人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
发明人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
IPC分类号： H01L21/302
CPC分类号： H01L21/3247 , H01L21/306 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： A process for treating substrates for the microelectronics or optoelectronics industry, wherein the substrates include on at least one of their faces a working layer in which components are intended to be formed. The process includes a step of annealing under a reductive atmosphere followed by a step of chemical-mechanical polishing on the free surface of the working layer.
摘要翻译：一种用于处理微电子学或光电子工业的衬底的方法，其中衬底在其至少一个面上包括要在其中形成部件的工作层。该方法包括在还原性气氛下进行退火，然后在工作层的自由表面上进行化学机械抛光的步骤。

5. 发明申请

US20060189102A1 Process for treating substrates for the microelectronics industry, and substrates obtained by this process 有权
标题翻译：用于处理微电子工业用基板的方法以及通过该方法获得的基板
公开(公告)号：US20060189102A1
公开(公告)日：2006-08-24
申请号：US11348502
申请日：2006-02-07
申请人： Thierry Barge , Andre Auberton-Herve , Hiroji Aga , Naoto Tate
发明人： Thierry Barge , Andre Auberton-Herve , Hiroji Aga , Naoto Tate
IPC分类号： H01L21/322
CPC分类号： H01L21/3247 , H01L21/306 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： A process for treating substrates for the microelectronics or optoelectronics industry, wherein the substrates include on at least one of their faces a working layer in which components are intended to be formed. The process includes a step of annealing under a reductive atmosphere followed by a step of chemical-mechanical polishing on the free surface of the working layer.
摘要翻译：一种用于处理微电子学或光电子工业的衬底的方法，其中衬底在其至少一个面上包括要在其中形成部件的工作层。该方法包括在还原性气氛下进行退火，然后在工作层的自由表面上进行化学机械抛光的步骤。

6. 发明授权

US07029993B1 Method for treating substrates for microelectronics and substrates obtained according to said method 有权
标题翻译：用于处理根据所述方法获得的用于微电子学和衬底的衬底的方法
公开(公告)号：US07029993B1
公开(公告)日：2006-04-18
申请号：US10069058
申请日：2000-08-17
申请人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
发明人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
IPC分类号： H01L21/302
CPC分类号： H01L21/3247 , H01L21/306 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： The invention relates to a method for treating substrates (50) for microelectronics or optoelectronics, whereby said substrates comprise a useful layer (52) on at least one of the surfaces thereof. The inventive method includes a mechanical/chemical polishing step occurring on a bare surface (54) of the useful layer and is characterized in that it also comprises a post-curing step in a reductive atmosphere (100) before said polishing step occurs.
摘要翻译：本发明涉及一种用于处理微电子学或光电子学的衬底（50）的方法，由此所述衬底在其至少一个表面上包括有用层（52）。本发明的方法包括在有用层的裸露表面（54）上发生的机械/化学抛光步骤，其特征在于它还包括在所述抛光步骤发生之前在还原性气氛（100）中的后固化步骤。

7. 发明授权

US06284629B1 Method of fabricating an SOI wafer and SOI wafer fabricated by the method 有权
标题翻译：通过该方法制造SOI晶片和SOI晶片的方法
公开(公告)号：US06284629B1
公开(公告)日：2001-09-04
申请号：US09343074
申请日：1999-06-29
申请人： Isao Yokokawa , Naoto Tate , Kiyoshi Mitani
发明人： Isao Yokokawa , Naoto Tate , Kiyoshi Mitani
IPC分类号： H01L2130
CPC分类号： H01L21/76251 , H01L21/76254 , Y10S156/942 , Y10S438/977 , Y10T156/1978
摘要： There is disclosed a method of fabricating an SOI wafer wherein an oxide film is formed on at least one of two single crystal silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form an ion implanted layer; the ion-implanted surface is brought into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed to separate a thin film from the silicon wafer with using the ion implanted layer as a delaminating plane to fabricate the SOI wafer having an SOI layer; and then an epitaxial layer is grown on the SOI layer to form a thick SOI layer. There is provided an SOI wafer which has a thick SOI layer with good thickness uniformity and good crystallinity and which is useful for a bipolar device or a power device.
摘要翻译：公开了一种制造SOI晶片的方法，其中氧化膜形成在两个单晶硅晶片中的至少一个上; 为了形成离子注入层，将氢离子或稀有气体离子注入到两个硅晶片之一的上表面中; 离子注入表面通过氧化膜与另一硅晶片的表面紧密接触; 使用离子注入层作为分层平面进行热处理以从硅晶片分离薄膜，以制造具有SOI层的SOI晶片; 然后在SOI层上生长外延层以形成厚的SOI层。提供了SOI晶片，该SOI晶片具有厚的均匀性和良好的结晶度的厚的SOI层，并且可用于双极器件或功率器件。

8. 发明授权

US06372609B1 Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method 有权
标题翻译：通过氢离子分离法制造SOI晶片的方法和通过该方法制造的SOI晶片
公开(公告)号：US06372609B1
公开(公告)日：2002-04-16
申请号：US09555687
申请日：2000-06-02
申请人： Hiroji Aga , Naoto Tate , Kiyoshi Mitani
发明人： Hiroji Aga , Naoto Tate , Kiyoshi Mitani
IPC分类号： H01L2130
CPC分类号： H01L21/76254
摘要： There is provided a method of fabricating an SOI wafer having high quality by hydrogen ion delamination method wherein a damage layer remaining on the surface of the SOI layer after delamination and surface roughness are removed maintaining thickness uniformity of the SOI layer. According to the present invention, there are provided a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after bonding heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after delaminating heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; and an SOI wafer fabricated by the methods.
摘要翻译：提供了一种通过氢离子分层方法制造具有高质量的SOI晶片的方法，其中去除了在分层之后残留在SOI层的表面上的损伤层和表面粗糙度，保持了SOI层的厚度均匀性。根据本发明，提供了一种通过氢离子分层方法制造SOI晶片的方法，其中通过在结合热处理之后的氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜，然后进行还原气氛的热处理。通过氢分离法制造SOI晶片的方法，其中通过在分解热处理之后在氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜，然后在还原气氛中进行热处理执行以及通过该方法制造的SOI晶片。

9. 发明授权

US5938840A Method for vapor phase growth 失效
标题翻译：气相生长方法
公开(公告)号：US5938840A
公开(公告)日：1999-08-17
申请号：US036780
申请日：1998-03-09
申请人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
发明人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C30B25/14 , C30B23/03
CPC分类号： C23C16/45506 , C23C16/455 , C30B25/14 , Y10T117/10
摘要： In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.
摘要翻译：通过使用水平型气相生长装置在半导体晶体基板的表面上形成薄膜，可以通过调整原料气体的浓度分布来适当地获得薄膜的厚度和电阻率的分布在反应容器的宽度方向上的混合气体的基板表面上。在反应容器中，从靠近基板的输送口的位置供给载气，从由载气流动引起的涡流产生区域的下游侧的位置供给原料气体。

10. 发明授权

US5755878A Method for vapor phase growth 失效
公开(公告)号：US5755878A
公开(公告)日：1998-05-26
申请号：US546867
申请日：1995-10-23
申请人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
发明人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C30B25/14 , C30B23/03
CPC分类号： C23C16/45506 , C23C16/455 , C30B25/14 , Y10T117/10
摘要： In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.

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