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    • 8. 发明授权
    • Decoupling capacitor method and structure using metal based carrier
    • 使用金属载体去耦电容器的方法和结构
    • US06461493B1
    • 2002-10-08
    • US09472136
    • 1999-12-23
    • Mukta S. FarooqShaji FarooqJohn U. KnickerbockerRobert A. RitaSrinivasa N. Reddy
    • Mukta S. FarooqShaji FarooqJohn U. KnickerbockerRobert A. RitaSrinivasa N. Reddy
    • C25D502
    • H05K3/445H01G4/10H05K1/053H05K1/162H05K3/4069H05K2201/09554H05K2203/0315H05K2203/1142
    • A process for fabricating a structure using a metal carrier and forming a double capacitor structure. The process comprises forming a first via hole through the metal carrier, forming a dielectric layer around the metal carrier and inside the first via hole, forming a second via hole through the dielectric layer and the metal carrier, and filling at least one of the via holes with conductive material. In one preferred embodiment, the process further comprises forming a third via hole through the metal carrier before the forming of a dielectric layer, wherein the dielectric layer is formed around the metal carrier, inside the first via hole, and inside the third via hole. The first via hole, the second via hole, and the third via hole are all filled with a conductive material. In one preferred embodiment, the dielectric layer comprises a top surface opposed to a bottom surface, and electrodes are formed on at least one of the top surface and the bottom surface of the dielectric layer.
    • 一种使用金属载体制造结构并形成双电容器结构的方法。 该工艺包括形成通过金属载体的第一通孔,在金属载体周围形成电介质层,并在第一通孔内部形成介电层,形成穿过电介质层和金属载体的第二通孔,并填充至少一个通孔 孔与导电材料。 在一个优选实施例中,该方法还包括在形成电介质层之前通过金属载体形成第三通孔,其中介电层围绕金属载体形成在第一通孔的内部,以及在第三通孔的内部。 第一通孔,第二通孔和第三通孔均填充有导电材料。 在一个优选实施例中,电介质层包括与底表面相对的顶表面,并且在介电层的顶表面和底表面中的至少一个上形成电极。